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NTE361
Silicon NPN Transistor
RF Power Output
PO = 2W @ 512MHz
Description:
The NTE361 is a silicon NPN transistor designed for 12.5 Volt UHF large–signal amplifier applications
in industrial and commercial FM equipment operating to 512MHz.
Features:
D Specified 12.5 Volt, 470MHz Characteristics:
Output Power = 2.0 Watts
Minimum Gain = 8.0dB
Efficiency = 50%
D Characterized with Series Equivalent Large–Signal Impedance Parameters
D Grounded Emitter TO39 Package for High Gain and Excellent Heat Dissipation
D Replaces Medium–Power Stud Mounted Devices
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
CBO
EBO
Collector Current–Continuous, I
Total Device Dissipation @ TC = 25°C, P
16V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CEO
C
D
Derate Above 25°C 46mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage V
V
Emitter–Base Breakdown Voltage V
Collector Cutoff Current I
(BR)CEOIC
(BR)CESIC
(BR)EBOIE
CBO
= 50mA, IB = 0 16 – – V
= 50mA, VBE = 0 36 – – V
= 1mA, IC = 0 4 – – V
VCB = 15V, IE = 0 – – 1.0 mA
36V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
400mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
ON Characteristics
DC Current Gain h
Dynamic Characteristics
Output Capacitance C
Functional Test
Common–Emitter Amplifier Power Gain G
Collector Efficiency η P
FE
ob
PE
.260 (6.6)
Max
VCE = 5V, IC = 100mA 20 – 200
VCB = 12.5V, IE = 0, f = 1MHz – – 15 pF
P
= 2W, VCC = 12.5V, f = 470MHz 8.0 – – dB
OUT
= 2W, VCC = 12.5V, f = 470MHz 50 – – %
OUT
.370 (9.39) Dia Max
.355 (9.03) Dia Max
.500 (12.7)
Min
Collector
.018 (0.45) Dia
Base
Emitter/Case
45°
.031 (.793)
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