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Silicon NPN Transistor
RF & Microwave Transistor
Description:
RF Power Transistor 20W − 175 MHz
Features:
Specified 28 Volt, 175MHz Characteristics
Output Power = 20 Watts
Minimum Gain = 8.2dB
Efficiency = 60%
Characterized from 125 to 175MHz
Includes Series Equivalent Impedances
Absolute Maximum Ratings:
Collector−Emitter Voltage, V
Collector−Base Voltage, V
Emitter−Base Voltage, V
Collector Current−Continuous, I
Total Device Dissipation @ 25°C, P
Derate Above 25°C 171mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
Operating Junction Temperature Range, T
CEO
CB
eb
C
d
stg
NTE359
J
35V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
65V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
30W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
−65 to °C +200. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
−65 to °C +200. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Off Characteristics
Collector−Emitter Breakdown Voltage V
Collector−Emitter Sustaining Voltage V
Emitter−Base Breakdown Voltage V
Collector Cutoff Current I
On Characteristics
DC Current Gain H
(Br)CEOIC
(Br)CESIC
(Br)eboIE
CBO
fe
= 200mA, IB = 0, Note 1 − 35 − V
= 200mA, VBE = 0 − 65 − V
= 10mA, IC = 0 − 4 − V
VCB = 30 V, IE = 0 − 1 − mA
IC = 200mA, VCE = 5.0V − 5 − −
Note 1. Pulsed through 25mH inductor
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Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Dynamic Characteristics
Output Capacitance C
Common−Emitter Amplifier Power Gain G
VCB = 30V, IE = 0, f = .1 to 1MHz − 22 35 pF
ob
P
pe
= 20W, VCE = 28V, f = 175MHz 8.2 − − dB
OUT
Collector Efficiency η − 60 − −
1.040 (26.4) Max
.520
(13.2)
C
.230
(5.84)
EE
.100 (2.54)
8−32−NC−3A
Wrench Flat
B
.385
(9.8)
Dia
.168 (4.27)
.005 (0.15)
.750
(19.05)
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