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NTE350F
Silicon NPN Transistor
RF Power AMP
Description:
The NTE350F is designed for 12.5 Volt large−signal amplifier applications required in commercial and
industrial equipment operating to 300MHz.
Features:
D Specified 12.5 Volt, 175MHz Characteristics:
Output Power = 15 Watts
Minimum Gain = 6.3dB
Efficiency = 60%
D Characterized with Series Equivalent Large−Signal Impedance Parameters
Absolute Maximum Ratings:
Collector−Emitter Voltage, V
Collector−Base Voltage, V
Emitter−Base Voltage, V
Collector Current, I
C
Total Device Dissipation, P
CEO
CB
EB
D
TC = +25°C (Note 1) 31W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate above +25°C 177W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
−65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Device is designed for RF operation. The total dissipation rating applies only when the
devices are operated as RF amplifiers.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
18V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
36V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector−Emitter Breakdown Voltage
Emitter−Base Breakdown Voltage V
Collector Cutoff Current
ON Characteristics
DC Current Gain h
Dynamic Characteristics
Output Capacitance C
Functional Test
Common−Emitter Amplifier Gain G
Collector Efficiency η P
V
(BR)CEOIC
V
(BR)CESIC
(BR)EBOIE
I
CES
I
CBO
FE
ob
PE
= 20mA, IB = 0 18 − − V
= 10mA, VBE = 0 36 − − V
= 2.0mA, IC = 0 4.0 − − V
VCE = 15V, VBE = 0, TC = +55°C − − 8.0 mA
VCB = 15V, IE = 0 − − 0.5 mA
IC = 0.5A, VCE = 5.0V 5.0 − −
VCB = 15V, IE = 0, f = 0.1MHz − 70 85 pF
P
= 15W, VCC = 12.5V, f = 175MHz 6.3 − − dB
OUT
= 15W, VCC = 12.5V, f = 175MHz 60 − − %
OUT
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.250
(6.35)
.725 (18.42)
EC
BE
.122 (3.1) Dia
(2 Holes)
.225 (5.72)
.185 (4.7)
.378 (9.56)
.005 (0.15)
.975 (24.77)
.860 (21.84)
.255
(6.5)
.085 (2.14)
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