Datasheet NTE3028 Specification

NTE3028

Infrared Emitting Diode

PN Gallium Arsenide

Description:

The NTE3028 is designed for applications requiring high power output, low drive power, and very fast
response time. This device is used in industrial processing and control, light modulators, shaft or posi­tion encoders, punched card readers, optical switching, and logic circuits. It is spectrally matched for
use with silicon detectors.

Features:

D High Power Output
D Infrared Emission
D Low Drive Current
D Popular TO18 Type Package for Easy Handling and Mounting

Absolute Maximum Ratings:

Reverse Voltage, V
Forward Current, I

R

F

Continuous 60mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak (PW = 100µs, Duty Cycle = 2%) 1A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Total Device Dissipation (TA = +25°C), P

Derate Above 25°C (Note 1) 2.27mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Temperature Range, T
Storage Temperature Range, T

A

stg

D

–55° to +125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

250mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Note 1. Printed circuit board mounting.

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Reverse Leakage Current I
Reverse Breakdown Voltage V
Forward Voltage V
Total Capacitance C

(BR)RIR

VR = 3V – 2 – nA

R

= 100µA 6 20 – V

IF = 50mA – 1.32 1.5 V

F

VR = 0V, f = 1MHz – 18 – pF

T

Optical Characteristics: (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Total Output Power P

Radiant Intensity I

Peak Emission Wavelength λP – 940 – nm
Spectral Line Half Width ∆λ – 40 – nm

IF = 60mA, Note 2 – 2.5 – mW

O

IF = 100mA, Note 2, Note 3 1.0 4.0 – mW
IF = 100mA, Note 3, Note 4 – 1.5 – mW/

O

steradian

Note 2. Power Output, PO, is the total power radiated by th device into a solid angle of 2π steradians.

It is measured by directing all radiation leaving the device, within this solid angle, onto a cali-

brated silicon solar cell.
Note 3. PW = 100µs, Duty Cycle = 2%.
Note 4. Irradiance from a Light Emitting Diode (LED) can be calculated by:

I

H =

e

2

d

where

H is irradiance in mW/cm

2

Ie is radiant intensity in mW/steradian

d2 is distance from LED to the detector in cm

.030 (.762)

Seating Plane

.040 (1.02)

.186 (4.72) Dia
.145 (3.68) Dia

.195

(4.95)

CathodeAnode

.500

(12.7)

Min

.018 (0.45) Dia Typ

.220 (5.59) Dia

.100 (2.54)