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NTE276
Silicon Controlled Rectifier (SCR)
Gate Controlled Switch
Features:
D Gate Turn−Off Thyristor
D High Speed Power Switching
D TV Horizontal Output
D Inverter and Converter Application
D Supplied in a Japanese TO66 Type Package
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Non−Repetitive Peak Off−State Voltage (TJ = −40° to +120°C, VGK = 0), V
Repetitive Peak Off−State Voltage (TJ = −40° to +120°C, VGK = 0), V
DC On−State Anode Current (TC = +60°C), I
Surge On−State Current (TC = +60°C), I
T
TSM
t = 100µs 80A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
t = 1ms 33A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Forward Gate Current (TC = +60°C, t = 1ms), I
Average Forward Gate Power Dissipation (TC = +60°C), P
GFM
GF(AV)
Peak Reverse Gate Power Dissipation (TC = +60°C, t = 5µs), P
Average Reverse Gate Power Dissipation (TC = +60°C), P
Total Power Dissipation (TC = +25°C), P
Operating Junction Temperature Range, T
Storage Temperature Range, T
stg
Thermal Resistance, Junction−to−Case, R
T
J
thJC
GR(AV)
Typical 1.3°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum 2.0°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DRM
GRM
DSM
1400V. . . . . . . . . . .
1250V. . . . . . . . . . . . . . . .
5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1W. . . . . . . . . . . . . . . . . . . . . . . . .
30W. . . . . . . . . . . . . . . . . . . . .
2W. . . . . . . . . . . . . . . . . . . . . . . . .
47.5W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
−40° to +120°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
−50° to +120°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Controllable Anode Current I
On−State Voltage V
Gate Trigger Voltage V
Gate Trigger Current I
TC
GT
VD = 100V, VGR = 9V, Rg = 0 25 − − A
IT = 5A, IGF = 300mA − − 5.3 V
T
VD = 10V − − 1.5 V
GT
VD = 10V − − 120 mA
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Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Latching Current I
Holding Current I
Turn−Off Current Gain G
Off−State Anode Current I
Turn−On Time t
Turn−Off Time t
Critical rate of Rise of
dv/dt VDM = 1000V, VGK 0 1000 − − V/µs
Off−State Voltage
Gate Breakdown Voltage V
(BR)GRIGR
.062
(1.57)
L
H
off
DRM
d
t
r
stg
t
f
VD = 10V − 0.6 − A
− 300 − mA
VD = 100V, IT = 25A, t
= 10µs 14.7 20.0 −
off
VD = 1000V, VGK = 0 − − 0.5 mA
VD = 100V, IT = 5A, IGF = 250mA − 0.2 − µs
− 1.3 − µs
VD = 100V, IT = 5A, IGR = 9V − 0.22 − µs
− 0.09 − µs
= 10mA 9 12 − V
.562 (14.28)
Dia
.350
(8.89)
.161 (4.1) Dia
(2 Places)
.141 (3.69) R
.350 (8.89) R Max
.031 (0.78) Dia
.905 (23.0)
.516 (13.1)
.350
(8.89)
Min
Gate
.238
(6.04)
CathodeAnode (Case)
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