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NTE274 (NPN) & NTE275 (PNP)
Silicon Complementary Transistors
Darlington Power Amplifier, Switch
Description:
The NTE274 (NPN) and NTE275 (PNP) are silicon complementary Darlington transistors in a TO66
type case designed for general purpose amplifier, low–frequency switching and hammer driver
applications.
Features:
D High DC Current Gain: hFE = 3000 Typ @ IC = 2A
D Low Collector–Emitter Saturation Voltage: V
D Collector–Emitter Sustaining Voltage: V
CE(sat)
CEO(sus)
D Monolithic Construction with Built–In Base–Emitter Shunt Resistors
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I
C
CEO
CB
EB
Continuous 4A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak 8A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
Total Power Dissipation (T
B
= +25°C), P
C
D
Derate Above 25°C 0.286W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
Storage Temperature Range, T
stg
Thermal Resistance, Junction–to–Case, R
J
thJC
= 2V Max @ IC = 2A
= 80V Min
80V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
80V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
80mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
50W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3.5°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Emitter Sustaining Voltage V
Collector Cutoff Current I
Emitter Cutoff Current I
(TC = +25°C unless otherwise specified)
CEO(sus)IC
CEO
I
CER
EBO
VCE = 40V, IB = 0 – – 0.5 mA
VCE = 80V, V
VCB = 80V, V
VBE = 5V, IC = 0 – – 2.0 mA
= 50mA, IB = 0 80 – – V
= 1.5V – – 0.5 mA
EB(off)
= 1.5V, TA = +150°C – – 5.0 mA
EB(off)
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Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
ON Characteristics
DC Current Gain h
FE
VCE = 3V, IC = 2A 750 – 18000
VCE = 3V, IC = 4A 100 – –
Collector–Emitter Saturation Voltage V
CE(sat)IC
= 2A, IB = 8mA – – 2.0 V
IC = 4A, IB = 40mA – – 3.0 V
Base–Emitter Saturation Voltage V
Base–Emitter ON Voltage V
BE(sat)IC
BE(on)
= 4A, IB = 40mA – – 4.0 V
VCE = 3V, IC = 2A – – 2.8 V
Dynamic Characteristics
Magnitude of Common Emitter
|hfe| IC = 1.5A, VCE = 3V, f = 1MHz 4.0 – –
Small–Signal Short–Circuit
Forward Current Transfer Ratio
Output Capacitance
NTE274
C
ob
VCB = 10V, IE = 0, f = 0.1MHz – – 120 pF
NTE275 – – 200 pF
Small–Signal Current Gain h
IC = 1.5A, VCE = 3V, f = 1kHz 300 – –
fe
NTE274
C
B
.062 (1.57)
.485 (12.3)
Dia
.295 (7.5)
E
NTE275
.031 (0.78) Dia
.960 (24.3) Base
.580 (14.7)
.147 (3.75) Dia
(2 Places)
C
.145 (3.7) R Max
.360 (9.14)
Min
.200
(5.08)
B
EmitterCollector/Case
E
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