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NTE2708
Integrated Circuit
NMOS, 8K UV EPROM, 450ns
Description:
The NTE2708 is an ultra–violet light–erasable, electrically programmable read only memory. It has
8, 192 bits organized as 1024 words of 8–bit length. This device is fabricated using N–channel silicon–
gate technology for high speed and simple interface with MOS and bipolar circuits. All inputs (including program data inputs) can be driven by Series 74 TTL circuits without the use of external pull–up
resistors. Each output can drive one Series 74 or 74LS TTL circuit without external resistors. The
data outputs for the NTE2708 are three–state for OR tying multiple devices on a common bus.
This EPROM is designed for high–density fixed memory applications where fast turn arounds and/or
program changes are required. This device is designed for operation from 0° to +70°C and is supplied
in a 24–Lead DIP package for insertion in mounting–hole rows on 600–mil (15.2 mm) centers.
Features:
D 1024 X 8 Organization
D All Inputs and Outputs Fully TTL Compatible
D Static Operation (No Clocks, No Refresh)
D Performance Ranges:
Max Access: 450ns
Min Cycle: 450ns
D 3–State Outputs for OR–Ties
D 8–Bit Output
D Plug–Compatible Pin–Outs Allowing Interchangeability
Absolute Maximum Ratings: (TA = 0° to +70°C, Note 1 unless otherwise specified)
Supply Voltage, VCC (Note 2) –0.3 to +15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Supply Voltage, VDD (Note 2) –0.3 to +20V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Supply Voltage, VSS (Note 2) –0.3 to +15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
All Input Voltage (except program) (Note 2) –0.3 to +20V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Program Input (Note 2) –0.3 to +35V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output Voltage (operating, with respect to VSS) –2 to +7V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating free–air temperature range 0°C to 70°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature Range –55°C to 125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permenant
damage to the device. This is a stress rating only and functional operation of the device at
these or any other conditions beyond those indicated in the “Recommended Operating
Conditions” section of this specification is not implied. Exposure to absolute–maximum–
rated conditions for extended periods may affect device reliability.
Note 2. Under absolute maximum ratings, voltage values are with respect to the most–negative sup-
ply voltage, VBB (substrate), unless otherwise noted. Throughout the remainder of this data
sheet, voltage values are with respect to VSS.
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Operation (Read Mode):
Address (A0–A9)
The address–valid interval determines the device cycle time. The 10–bit positive–logic address is
decoded on–chip to select one of the 1024 words of 8–bit length in the memory array. A0 is the least–
significant bit and A9 is the most–significant bit of the words address.
Chip Select, Program Enable [CS (PE)]
When the chip select is low, all eight outputs are enabled and the eight–bit addressed word can be
read. When the chip select is high, all eight outputs are in a high–impedance state.
Data Out (Q1–Q8)
The chip must be selected before the eight–bit outputs word can be read. Data will remain valid until
the address is changed or the chip is deselected. When deselected, the three–state outputs are in
a high–impedance state. The outputs will drive TTL circuits without external components.
Program
The program pin must be held below VCC in the read mode.
Operation (Program Mode):
Erase
Before programming, the NTE2708 is erased by exposing the chip through the transparent lid to high–
intensity ultraviolet light (wavelength 2537 angstroms). The recommended minimum exposure dose
(= UV intensity x exposure time) is fifteen watt–seconds per square centimeter. Thus, a typical 12
milliwatt per square centimeter , filterless UV lamp will erase the device in a minimum of 21 minutes.
The lamp should be located about 2.5 centimeters above the chip during erasure. After erasure, all
bits are in the “1” state.
Programming
Programming consists of successively depositing a small amount of charge to a selected memory cell
that is to b e changed from the erased high state to the low state. A low can be changed to a high only
by erasure. Programming is normally accomplished on a PROM or EPROM Programmer. Programming must be done at room temperature (+25°C) only.
To Start Programming
First bring the CS (PE) pin to +12V to disable the outputs and convert them to inputs. This pin is held
high for the duration of the programming sequence. The first word to be programmed is addressed
(it is customary to begin with the “0” address) and the data to be stored is placed on the Q1–Q8 program inputs. Then a +25V program pulse is applied to the program pin. After 0.1 to 1.0 milliseconds
the program pin is brought back to 0V. After at least one microsecond the word address is sequentially
changed to the next location, the new data is set up and the program pulse is applied.
Programming continues in this manner until all words have been programmed. This constitutes one
of N program loop. The entire sequence is then repeated N times with N x t
if t
= 1 ms; then N = 100, the minimum number of program loops required to program the EPROM.
w(PR)
≥ 100 ms. Thus,
w(PR)
To Stop Programming
After cycling through the N program loops, the last program pulse is brought to 0V, then Program Enable [CS (PE)] is brought to VIL which takes the device out of the program mode. The data supplied
by the programmer must be removed before the address is changed since the program inputs are now
data outputs and change of address could cause a voltage conflict on the output buffer. Q 1 –Q8 out-
puts are invalid up to 10 microseconds after the program enable pin is brought from V
IH(PE)
to VIL.
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Recommended Operating Conditions:
Parameter Symbol Min Nom Max Unit
Supply Voltage V
V
V
V
High–Level Input Voltage (Except Program & Program Enable) V
High–Level Program Enable Input Voltage V
High–Level Program Input Voltage V
IH(PE)
IH(PR)
Low–Level Input Voltage (Except Program) V
Low–Level Program Input Voltage VIL(PR) max ≤ VIH(PR) –25V V
High–Level Program Pulse Input Current (Sink) I
Low–Level Program Pulse Input Current (Source) I
IL(PR)
IH(PR)
IL(PR)
Operating Free–Air Temperature T
–4.75 –5 –5.25 V
BB
CC
DD
SS
IH
4.75 5 5.25 V
11.4 12 12.6 V
– 0 – V
2.4 – VCC+1 V
11.4 12 12.6 V
25 26 27 V
IL
V
SS
V
SS
– – 40 mA
– – 3 mA
A
0 – 70 °C
Electrical Characteristics: (TA = 0° to +70°C, Note 3 unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
High–level Output Voltage V
Low–level Output Voltage V
Input Current (Leakage) I
Output Current (Leakage) I
Supply Current from V
Supply Current from V
Supply Current from V
BB
CC
DD
Power Dissipation P
OHIOH
OL
I
O
I
BB
I
CC
I
DD
D(AV)
= –100µA 3.7 – – V
IOH = –1mA 2.4 – – V
IOL = 1.6mA – – 0.45 µA
CS(PE) = 5V – 1 10 µA
TA = 70°C – 30 45 mA
All Inputs High, CS(PE) = 5V,
TA = 0°C (Worst Case)
– 6 10 mA
– 50 65 mA
– – 800 mW
– 0.65 V
– 1 V
Note 3. All typical values are at TA = 25°C and nominal voltages.
Capacitance: (TA = 0° to +70°C, f = 1MHZ, Note 3 unless otherwise specified)
Parameter Symbol Min Typ Max Unit
Input Capacitance C
Output Capacitance C
I
O
– 4 6 pF
– 8 12 pF
Note 3. All typical values are at TA = 25°C and nominal voltages.
Switching Characteristics: (TA = 0° to +70°C unless otherwise specified)
Parameter Test Conditions Min Typ Max Unit
Access Time from Address
Access Time from CS
CL = 100 pF, 1 Series 74 TTL load,
t
, t
f(ad)
= 20ns
f(CS)
– – 450 ns
– – 120 ns
Output Invalid from Address Change 0 – – ns
Output Disable Time (Note 4) 0 – 120 ns
Read Cycle Time 450 – – ns
Note 4. Value calculated from 0.5 volt delta to measured output level.
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TA = +25°C Program Characteristics Over Recommended Supply Voltage Range:
Parameter Symbol Min Typ Max Unit
Pulse Width, Program Pulse t
Transition Times (Except Program Pulse) t
Transition T imes, Program Pulse t
Address Setup Time t
Data Setup Time t
Program Enable Setup Time t
su(ad)
su(da)
su(PE)
Address Hold Time t
Address Hold Time after Program Input Data Stopped t
h(ad, da R)
Data Hold Time t
Program Enable Hold Time t
Delay Time, CS (PE) Low to Address Change t
CL, adX
Pin Connection Diagram
A7
A612
A5
3
A4
4
A3
5
A2
6
A1
7
A0
8 17
9 16
Q1
Q2
V
24
CC
23
A8
A9
22
21
V
BB
20
CS/(PE)
V
19
DD
18 PROGRAM
Q8
Q7
Q610 15
w(PR)
T
T(PR)
h(ad)
h(da)
h(PE)
0.1 – 1.0 ms
– – 20 ns
50 – 2000 ns
10 – – µs
10 – – µs
10 – – µs
1000 – – ns
0 – – ns
1000 – – ns
500 – – ns
0 – – ns
Q3 11 14 Q5
12 13V
SS
1.290 (32.76) Max
Q4
.600 (15.24) Max
Glass
24 13
.520
(13.2)
112
.280 (7.11) Dia UV Window
Glass Sealant
.160 (4.06) Max
.200 (5.08)
Max
.100 (2.54)
.125
(3.17)
.670
(17.02)
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