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NTE2591
Silicon NPN Transistor
High Voltage Amp/Switch
Features:
D High Breakdown Voltage, High Reliability
D Low Output Capacitance
D Wide ASO Range
Absolute Maximum Ratings:
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
EBO
C
(TA = +25°C unless otherwise specified)
CBO
CEO
Continuous 20mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak 60mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation, P
Operating Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Gain–Bandwidth Product f
Output Capacitance C
Collector Emitter Saturation Voltage V
Base Emitter Saturation Voltage V
Collector Base Breakdown Voltage V
Collector Emitter Breakdown Voltage V
Emitter Base Breakdown Voltage V
C
J
stg
(TA = +25°C unless otherwise specified)
CBO
EBO
FE
T
ob
CE(sat)IC
BE(sat)IC
(BR)CBOIC
(BR)CEOIC
(BR)EBOIE
VCB = 900V, IE = 0 – – 1.0 µA
VEB = 4V, IC = 0 – – 1.0 µA
VCE = 5V, IC =1mA 20 50 120
VCE = 10V, IC = 1mA – 6 – MHz
VCB = 100V, f = 1MHz – 1.6 – pF
2000V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
900V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.2W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 2mA, IB = 400µA – – 5 V
=2mA, IB = 400µA – – 2 V
= 1mA, IE = 0 2000 – – V
= 1mA, RBE = ∞ 900 – – V
= 1mA, IC = 0 5 – – V
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.402 (10.2)
BC E
.035
(0.9)
.346
(8.8)
.433
(11.0)
.177 (4.5)
.051 (1.3)
.019 (0.5)
.100 (2.54)
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