Datasheet NTE233 Datasheet (NTE)

NTE233

Silicon NPN Transistor

Video IF, Oscillator

Absolute Maximum Ratings:

Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I

C

Total Power Dissipation (T

Derate above +25°C 5mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature, T
Storage Temperature Range, T
Lead Temperature (During Soldering, 1/16” ±1/32” from case, 10sec), T

CEO

CBO

EBO

= +25°C), P

A

stg

T

J

30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

3V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

100mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

625mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

L

+230°C. . . . . . . . . . . . . . .

Electrical Characteristics:

(TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Collector–Base Breakdown Voltage V
Emitter–Base Breakdown Voltage V

(BR)CBOIC
(BR)EBOIE

Collector Cutoff Current I

I
DC Pulse Current Gain h
Collector Saturation Voltage V
Collector–Emitter Sustaining Voltage V

CE(sat)IC

CEO(sus)IC

Current Gain–Bandwidth Product f

CBO
CEO

FE

T

= 100µA, IE = 0 30 – – V

= 10µA, IC = 0 3 – – V
VCB = 30V, IE = 0 – – 50 nA
VCE = 30V, IB = 0 – – 1 µA
IC = 10mA, VCE = 10V, Note 1 20 – 100

= 20mA, IB = 0.1mA, Note 1 – 0.6 – V

= 1mA, IB = 0, Note 1 30 – – V
IC = 10mA, VCE = 10V,

f = 100MHz

Power Gain, Fixed Neutralization G

pe

IC = 10mA, VCE = 10V,
f = 45MHz

Reverse Transfer Capacitance C
Output Admittance, Input Short

Circuit

g

oe

IE = 0, VCB = 10V, f ≤ 1MHz 0.6 – 1.1 pF

re

IC = 10mA, VCE = 10V,
f = 45MHz

Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle = 1%.

300 – 700 MHz

25 – – dB

30 – 200 µmho

.210

(5.33)

Max

.135 (3.45) Min

Seating Plane

.500

(12.7)

Min

.100 (2.54)

.105 (2.67) Max

.205 (5.2) Max

.021 (.445) Dia Max

E B C

.050 (1.27)

.165

(4.2)

Max

.105 (2.67) Max