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Features:
D High Reverse Voltage: V
D High Speed Switching: t
NTE2325
Silicon NPN Transistor
High Voltage Switch
= 900V (Max)
CBO
= 0.7µs (Max)
f
Absolute Maximum Ratings:
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
EBO
C
Peak Collector Current (Note 1), i
Base Current, I
B
Collector Power Dissipation (T
Operating Junction Temperature, T
Storage Temperature Range, T
(TA = +25°C unless otherwise specified)
CBO
CEO
cp
= +25°C), P
C
J
stg
C
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 10%
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Base Breakdown Voltage V
Collector–Emitter Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector Cutoff Current I
Emitter Cutoff Current I
Collector–Emitter Sustaining Voltage V
(TA = +25°C unless otherwise specified)
(BR)CBOIC
(BR)CEO
(BR)EBOIE
CBO
EBO
CEO(sus)IC
V
CEX(sus)1IC
V
CEX(sus)2IC
= 1mA, IE = 0 900 – – V
IC = 5mA, RBE = ∞
= 1mA, IC = 0 7 – – V
VCB = 800V, IE = 0 – – 10 µA
VEB = 5V, IC = 0 – – 10 µA
= 3A, L = 500µH, IB = 1A 800 – – V
= 1A, IB1 = 200mA, IB2 = –200mA,
L = 2mH, Clamped
= 500mA, IB1 = 100mA, IB2 = –100mA,
L = 5mH, Clamped
900V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
800V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
50W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
800 – – V
800 – – V
900 – – V
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Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
ON Characteristics
DC Current Gain h
h
Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V
CE(sat)IC
BE(sat)IC
Dynamic Characteristics
Current Gain–Bandwidth Product f
Output Capactiance C
Switching Characteristics
Turn–On Time t
Storage Time t
Fall Time t
FE1
FE2
T
ob
on
stg
f
VCE = 5V, IC = 200mA 10 – –
VCE = 5V, IC = 1A 8 – –
= 1.5A, IB = 300mA – – 2.0 V
= 1.5A, IB = 300mA – – 1.5 V
VCE = 10V, IC = 200mA – 15 – MHz
VCB = 10V, f = 1MHz – 60 – pF
IC = 2A, IB1 = 400mA, IB2 = 800mA,
RL = 200Ω, VCC = 400V
– 1.0 – µs
– 3.0 – µs
– 0.7 – µs
.420 (10.67)
Max
.110 (2.79)
.147 (3.75)
Dia Max
.070 (1.78) Max
Base
.100 (2.54) Collector/Tab
.500
(12.7)
Max
.250 (6.35)
Max
.500
(12.7)
Min
Emitter
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