Datasheet NTE2319 Datasheet (NTE)

NTE2319

Silicon NPN Transistor

High Voltage, High Speed Power Switch

Description:

The NTE2319 is a silicon NPN transistor in a TO3 type package designed for high voltage, high speed,
power switching in inductive circuits where fall time is critical. It is particularly suited for line–operated
switchmode applications.

Features:

D Fast Turn–On Times @ TC = +100°C:

Inductive Fall Time: 50ns Typ
Inductive Crossover Time: 90ns Typ
Inductive Storage Time: 800ns Typ

D 100°C Performance Specified for:

Reverse–Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Current

Applications:

D Switching Regulators
D Inverters
D Solenoids
D Relay Drivers
D Motor Controls
D Deflection Circuits

Absolute Maximum Ratings:

Collector–Emitter Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I

C

CEO
CEV

EB

Continuous 15A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak (Note 1) 20A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Base Current, I

B

Continuous 10A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak (Note 1) 15A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Total Device Dissipation, P

D

TC = +25°C 175W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

= +100°C 100W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

T

C

Derate Above 25°C 1W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature Range, T
Storage Temperature Range, T

stg

Thermal Resistance, Junction–to–Case, R

J

thJC

Lead Temperature (During Soldering, 1/8” from case, 5sec), T
Note 1. Pulse Test: Pulse Width ≤ 5µs, Duty Cycle ≥ 10%.

450V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

850V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

L

+275°C. . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics: (TC = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics

Collector–Emitter Sustaining Voltage V

CEO(sus)

Collector Cutoff Current I

I
Emitter Cutoff Current I
ON Characteristics (Note 2)
Collector–Emitter Saturation Voltage V

Base–Emitter Saturation Voltage V

CE(sat)IC

BE(sat)IC

DC Current Gain h

Dynamic Characteristics

Output Capacitance C

Switching Characteristics

Resistive Load (Table 1)
Delay Time t
Rise Time t
Storage Time t
Fall Time t
Storage Time t
Fall Time t
Inductive Load (Table 2)
Storage Time t
Fall Time t
Crossover Time t
Storage Time t
Fall Time t
Crossover Time t

CEV

CER
EBO

FE

sv

sv

Table 2, IC = 100mA, IB = 0 450 – – V
V

CEV

V

BE(off)

= 850V,

= 1.5V

TC = +25°C – – 0.25 mA

TC = +100°C – – 1.5 mA
VCE = 850V, RBE = 50Ω, TC = +100°C – – 2.5 mA
VEB = 6V, IC = 0 – – 1.0 mA

= 5A, IB = 700mA – – 2.5 V

IC = 10A, IB = 1.3A TC = +25°C – – 3.0 V

TC = +100°C – – 3.0 V

= 10A, IB = 1.3A TC = +25°C – – 1.5 V

TC = +100°C – – 1.5 V
IC = 15A, VCE = 5V 5 – –

VCB = 10V, IE = 0, f

ob

IC = 10A, IB2 = 2.6A,

d

VCC = 250V,

r

IB1 = 1.3A,

I = 1.3A,
PW = 30νs,

s

Duty Cycle ≤ 2%

f

s

f

= 1kHz – – 400 pF

test

RB = 1.6Ω

V

BE(off)

= 5V

IC = 10A, TC = +100°C
IB1 = 1.3A,

fi
c

V

V = 5V,
V

BE(off)
CE(pk)

CE(pk)

= 5V,
= 400V

TC = +150°C

fi
c

– 20 – ns
– 200 – ns
– 1200 – ns
– 200 – ns
– 650 – ns
– 80 – ns

– 800 1800 ns
– 50 200 ns
– 90 250 ns
– 1050 – ns
– 70 – ns
– 120 – ns

Note 2. Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2%.

.135 (3.45) Max

.350 (8.89)

.215 (5.45)

.430

(10.92)

Emitter

.875 (22.2)

Dia Max

Seating
Plane

.040 (1.02).312 (7.93) Min

1.187 (30.16)

.665

(16.9)

.156 (3.96) Dia
(2 Holes)

.188 (4.8) R Max

.525 (13.35) R Max

Collector/CaseBase