Datasheet NM25C640EM8X, NM25C640EM8, NM25C640LVM8, NM25C640UM8, NM25C640ULZVN Datasheet (Fairchild Semiconductor)

1

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NM25C640 Rev. D.2

NM25C640 64K-Bit Serial CMOS EEPROM

(Serial Periphrial Interface (SPI) Synchronous Bus)

PRELIMINARY

March 1999

© 1999 Fairchild Semiconductor Corporation

NM25C640
64K-Bit Serial CMOS EEPROM
(Serial Peripheral Interface (SPI) Synchronous Bus)

General Description

The NM25C640 is a 65,536-bit CMOS EEPROM with an SPI
compatible serial interface. The NM25C640 is designed for data
storage in applications requiring both non-volatile memory and in­system data updates. This EEPROM is well suited for applications
using the 68HC11 series of microcontrollers that support the SPI
interface for high speed communication with peripheral devices
via a serial bus to reduce pin count. The NM25C640 is imple­mented in Fairchild Semiconductor’s floating gate CMOS process
that provides superior endurance and data retention.

The serial data transmission of this device requires four signal
lines to control the device operation: Chip Select (CS), Clock
(SCK), Data In (SI), and Serial Data Out (SO). All programming
cycles are completely self-timed and do not require an erase
before WRITE.

BLOCK WRITE protection is provided by programming the STA­TUS REGISTER with one of four levels of write protection.
Additionally, separate WRITE enable and WRITE disable instruc­tions are provided for data protection.

Hardware data protection is provided by the WP pin to protect
against inadvertent programming. The HOLD pin allows the serial
communication to be suspended without resetting the serial
sequence.

Block Diagram

Features

■ 2.75 MHz clock rate @ 4.5V to 5.5V

2.1 MHz @ 2.7V to 4.5V

■ 65,536 bits organized as 8,192 x 8

■ Multiple chips on the same 3-wire bus with separate chip

select lines

■ Self-timed programming cycle

■ Simultaneous programming of 1 to 32 bytes at a time

■ Status register can be polled during programming to monitor

READY/BUSY

■ Write Protect (WP) pin and write disable instruction for both
hardware and software write protection

■ Block write protect feature to protect against accidental
writes

■ Endurance: 1,000,000 data changes

■ Data retention greater than 40 years

■ Packages available: 8-pin DIP or 8-Pin SO

DS500041-1

Instruction

Decoder

Control Logic

and Clock

Generators

High Voltage

Generator

and

Program

Timer

Instruction

Register

Program
Enable

Data In/Out Register

8 Bits

Data Out

Buffer

Non-Volatile

Status Register

Decoder

1 of 8,192

Address
Counter/
Register

EEPROM Array

65,536 Bits
(8,192 x 8)

Read/Write Amps

CS

HOLD

SCK

V

CC

V

SS

V

PP

WP

SI

SO

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NM25C640 Rev. D.2

NM25C640 64K-Bit Serial CMOS EEPROM

(Serial Periphrial Interface (SPI) Synchronous Bus)

Connection Diagram

Dual-In-Line Package (N)

and SO Package (M8)

Top View

Pin Names

CS Chip Select Input

SO Serial Data Output
WP Write Protect
V

SS

Ground

SI Serial Data Input

SCK Serial Clock Input

HOLD Suspends Serial Data

V

CC

Power Supply

Ordering Information
NM 25 C XX LZ E XX Letter Description

Package N 8-Pin DIP

M8 8-Pin SO

Temp. Range None 0 to 70°C

V -40 to +125°C
E -40 to +85°C

Voltage Operating Range Blank 4.5V to 5.5V

L 2.7V to 4.5V
LZ 2.7V to 4.5V and

<1µA Standby Current

Density/Mode 640 64K, mode 0

C CMOS

Interface 25 SPI

NM Fairchild Nonvolatile

Memory

CS

SO

WP
V

SS

V

CC

HOLD
SCK
SI

8
7
6
5

1
2
3
4

NM25C640

DS500041-2

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NM25C640 Rev. D.2

NM25C640 64K-Bit Serial CMOS EEPROM

(Serial Periphrial Interface (SPI) Synchronous Bus)

Standard Voltage 4.5 ≤ VCC ≤ 5.5V Specifications
Absolute Maximum Ratings (Note 1)

Ambient Storage Temperature -65°C to +150°C
All Input or Output Voltage with

Respect to Ground +6.5V to -0.3V
Lead Temp. (Soldering, 10 sec.) +300°C
ESD Rating 2000V

Operating Conditions

Ambient Operating Temperature

NM25C640 0°C to +70°C
NM25C640E -40°C to +85°C
NM25C640V -40°C to +125°C

Power Supply (VCC) 4.5V to 5.5V

DC and AC Electrical Characteristics 4.5V ≤ V

CC

≤ 5.5V (unless otherwise specified)

Symbol Parameter Conditions Min Max Units

I

CC

Operating Current CS = V

IL

3mA

I

CCSB

Standby Current CS = V

CC

50 µA

I

IL

Input Leakage VIN = 0 to V

CC

-1 +1 µA

I

OL

Output Leakage V

OUT

= GND to V

CC

-1 +1 µA

V

IL

CMOS Input Low Voltage -0.3 VCC * 0.3 V

V

IH

CMOS Input High Voltage VCC * 0.7 VCC + 0.3 V

V

OL

Output Low Voltage IOL = 2.1 mA 0.4 V

V

OH

Output High Voltage IOH = -0.8 mA VCC - 0.8 V

f

OP

SCK Frequency 2.75 MHz

t

RI

Input Rise Time 2.0 µs

t

FI

Input Fall Time 2.0 µs

t

CLH

Clock High Time (Note 2) 155 ns

t

CLL

Clock Low Time (Note 2) 155 ns

t

CSH

Min CS High Time (Note 3) 240 ns

t

CSS

CS Setup Time 176 ns

t

DIS

Data Setup Time 50 ns

t

HDS

HOLD Setup Time 90 ns

t

CSN

CS Hold Time 155 ns

t

DIN

Data Hold Time 50 ns

t

HDN

HOLD Hold Time 90 ns

t

PD

Output Delay CL = 200 pF 135 ns

t

DH

Output Hold Time 0 ns

t

LZ

HOLD to Output Low Z 240 ns

t

DF

Output Disable Time CL = 200 pF 290 ns

t

HZ

HOLD to Output High Z 240 ns

t

WP

Write Cycle Time 1–32 Bytes 10 ms

Capacitance T

A

= 25°C, f = 2.1/1 MHz (Note 4)

Symbol Test Typ Max Units

C

OUT

Output Capacitance 3 8 pF

C

IN

Input Capacitance 2 6 pF

Note 1: Stress above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only, and functional operation of the
device at these or any other conditions above those indicated in the operational sections of the specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.

Note 2: The fOP frequency specification specifies a minimum clock period of 1/fOP. Therefore, for every fOP clock cycle, t

CLH

+ t

CLL

must be equal to or greater than 1/fOP. For

example, if the 2.1MHz period = 476ns and t

CLH

= 190ns, t

CLL

must be 286ns.

Note 3: CS must be brought high for a minimum of t

CSH

between consecutive instruction cycles.

Note 4: This parameter is periodically sampled and not 100% tested.

AC Test Conditions

Output Load CL = 200 pF
Input Pulse Levels 0.1 * VCC – 0.9 * V

CC

Timing Measurement Reference Level 0.3 * VCC - 0.7 • V

CC

4

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NM25C640 Rev. D.2

NM25C640 64K-Bit Serial CMOS EEPROM

(Serial Periphrial Interface (SPI) Synchronous Bus)

Note 5: Stress above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only, and functional operation of the

device at these or any other conditions above those indicated in the operational sections of the specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
Note 6: The fOP frequency specification specifies a minimum clock period of 1/fOP. Therefore, for every fOP clock cycle, t

CLH

+ t

CLL

must be equal to or greater than 1/fOP. For

example, if the 2.1MHz period = 476ns and t

CLH

= 190ns, t

CLL

must be 286ns.

Note 7: CS must be brought high for a minimum of t

CSH

between consecutive instruction cycles.

Note 8: This parameter is periodically sampled and not 100% tested.

Low Voltage 2.7V ≤ VCC ≤ 4.5V Specifications
Absolute Maximum Ratings (Note 5)

Ambient Storage Temperature -65°C to +150°C
All Input or Output Voltage with

Respect to Ground +6.5V to -0.3V
Lead Temp. (Soldering, 10 sec.) +300°C
ESD Rating 2000V

Operating Conditions

Ambient Operating Temperature

NM25C640L/LZ 0°C to +70°C
NM25C640LZ/LZE -40°C to +85°C
NM25C640LV -40°C to +125°C

Power Supply (VCC) 2.7V–4.5V

DC and AC Electrical Characteristics 2.7V ≤ V

CC

≤ 4.5V (unless otherwise specified)

25C640L/LE 25C640LV

25C640LZ/LZE

Symbol Parameter Part Conditions Min. Max. Min Max Units

I

CC

Operating Current CS = V

IL

33mA

I

CCSB

Standby Current L CS = V

CC

10 10 µA

LZ 1 N/A µA

I

IL

Input Leakage VIN = 0 to V

CC

-1 1 -1 1 µA

I

OL

Output Leakage V

OUT

= GND to V

CC

-1 1 -1 1 µA

V

IL

Input Low Voltage -0.3 0.3 * V

CC

-0.3 0.3 * V

CC

V

V

IH

Input High Voltage 0.7 * VCCVCC + 0.3 0.7 * VCCVCC + 0.3 V

V

OL

Output Low Voltage I

OL

= 1.6 mA 0.4 0.4 V

V

OH

Output High Voltage I

OH

= –0.8 mA VCC - 0.8 VCC - 0.8 V

f

OP

SCK Frequency 2.1 1.0 MHz

t

RI

Input Rise Time 2.0 2.0 µs

t

FI

Input Fall Time 2.0 2.0 µs

t

CLH

Clock High Time (Note 6) 190 410 ns

t

CLL

Clock Low Time (Note 6) 190 410 ns

t

CSH

Min. CS High Time (Note 7) 240 500 ns

t

CSS

CS Setup Time 240 500 ns

t

DIS

Data Setup Time 100 100 ns

t

HDS

HOLD Setup Time 90 240 ns

t

CSN

CS Hold Time 240 500 ns

t

DIN

Data Hold Time 100 100 ns

t

HDN

HOLD Hold Time 90 240 ns

t

PD

Output Delay CL = 200 pF 240 500 ns

t

DH

Output Hold Time 0 0 ns

t

LZ

HOLD Output Low Z 100 240 ns

t

DF

Output Disable Time CL = 200 pF 240 500 ns

t

HZ

HOLD to Output Hi Z 100 240 ns

t

WP

Write Cycle Time 1-32 Bytes 15 15 ms

Capacitance T

A

= 25°C, f = 2.1/1 MHz (Note 8)

Symbol Test Typ Max Units

C

OUT

Output Capacitance 3 8 pF

C

IN

Input Capacitance 2 6 pF

AC Test Conditions

Output Load CL = 200pF
Input Pulse Levels 0.1 * VCC - 0.9 * V

CC

Timing Measurement Reference Level 0.3 * VCC - 0.7 * V

CC

5

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NM25C640 Rev. D.2

NM25C640 64K-Bit Serial CMOS EEPROM

(Serial Periphrial Interface (SPI) Synchronous Bus)

AC Test Conditions (Continued)

FIGURE 1. Synchronous Data Timing Diagram

FIGURE 3. SPI Serial Interface

SI
SO
SCK
CS

DATA OUT (MOSI)

DATA IN (MISO)

SERIAL CLOCK (CLK)

SS0
SS1
SS2
SS3

SI
SO
SCK
CS

SI
SO
SCK
CS

SI
SO
SCK
CS

SPI
CHIP
SELECTION

MASTER MCU

NM25C640

DS500041-3

DS500041-4

SCK

HOLD

SO

t

HZ

t

HDN

t

HDS

t

HDN

t

HDS

t

LZ

DS500041-6

FIGURE 2. Hold Timing

CS

SCK

SI

SO

V

IH

V

IL

V

IH

V

IL

V

IH

V

IL

V

OH

V

OL

t

CSS

t

CSH

t

CSN

t

DIS

t

PD

t

DH

t

DF

t

DIN

t

CLH

t

CLL

6

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NM25C640 Rev. D.2

NM25C640 64K-Bit Serial CMOS EEPROM

(Serial Periphrial Interface (SPI) Synchronous Bus)

Functional Description

TABLE 1. Instruction Set

Instruction Instruction Operation

Name Opcode

WREN 00000110 Set Write Enable Latch

WRDI 00000100 Reset Write Enable Latch

RDSR 00000101 Read Status Register

WRSR 00000001 Write Status Register

READ 00000011 Read Data from Memory

Array

WRITE 00000010 Write Data to Memory Array

MASTER: The device that generates the serial clock is desig­nated as the master. The NM25C640 can never function as a
master.

SLAVE: The NM25C640 always operates as a slave as the serial
clock pin is always an input.

TRANSMITTER/RECEIVER: The NM25C640 has separate pins
for data transmission (SO) and reception (SI).

MSB: The Most Significant Bit is the first bit transmitted and
received.

CHIP SELECT: The chip is selected when pin CS is low. When the
chip is

not

selected, data will not be accepted from pin SI, and the

output pin SO is in high impedance.
SERIAL OP-CODE: The first byte transmitted after the chip is

selected with CS going low contains the op-code that defines the
operation to be performed.

PROTOCOL: When connected to the SPI port of a 68HC11
microcontroller, the NM25C640 accepts a clock phase of 0 and a
clock polarity of 0. The SPI protocol for this device defines the byte
transmitted on the SI and SO data lines for proper chip operation.
See Figure 4.

FIGURE 4. SPI Protocol

…

…

…

CS

SCK

SI

SO

Bit 7 Bit 6 Bit 0

Bit 1Bit 7 Bit 0

CS

SI

SO

INVALID CODE

DS500041-7

DS500041-5

HOLD: The HOLD pin is used in conjunction with the CS to select
the device. Once the device is selected and a serial sequence is
underway, HOLD may be forced low to suspend further serial
communication with the device without resetting the serial se­quence. Note that HOLD must be brought low while the SCK pin
is low. The device must remain selected during this sequence. To
resume serial communication HOLD is brought high while the
SCK pin is low. The SO pin is at a high impedance state during
HOLD.

INVALID OP-CODE: After an invalid code is received, no data is
shifted into the NM25C640, and the SO data output pin remains
high impedance until a new CS falling edge reinitializes the serial
communication. See Figure 5 .

FIGURE 5. Invalid Op-Code

Data is clocked in on the positive SCK edge and out on the
negative SCK edge.

7

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NM25C640 Rev. D.2

NM25C640 64K-Bit Serial CMOS EEPROM

(Serial Periphrial Interface (SPI) Synchronous Bus)

Functional Description (Continued)

CS

SI

SO

Read

Op-Code

Byte H
Addr. n

Byte L

Addr. n

DatanData

n+1

Data

n+2

Data

n+3

CS

SI

SO

RDSR

Op-Code

SR Data

MSB…LSB

CS

SI

SO

WREN Op-Code

DS500041-8

DS500041-9

DS500041-10

READ SEQUENCE: Reading the memory via the serial SPI link
requires the following sequence. The CS line is pulled low to select
the device. The READ op-code is transmitted on the SI line
followed by the high order address byte (A12–A8), and the low
order address byte (A7–A0). The leading three bits in the high
order address byte will be ignored. After this is done, data on the
SI line becomes don’t care. The data (D7–D0) at the address
specified is then shifted out on the SO line. If only one byte is to
be read, the CS line can be pulled back to the high level. It is
possible to continue the READ sequence as the byte adress is
automatically incremented and data will continue to be shifted out.
When the highest address is reached (1FFF), the address counter
rolls over to lowest address (000) allowing the entire memory to be
read in one continuous READ cycle. See Figure 6.

FIGURE 6. Read Sequence

READ STATUS REGISTER (RDSR) : The Read Status Register

(RDSR) instruction provides access to the status register is used
to interrogate the READY/BUSY and WRITE ENABLE status of
the chip. Two non-volatile status register bits are used to select
one of four levels of BLOCK WRITE PROTECTION. The status
register format is shown in Table 2.

TABLE 2. Status Register Format

Bit Bit Bit Bit Bit Bit Bit Bit

76543210

X X X X BP1 BP0 WEN RDY

X = Don't Care.

Status register Bit 0 = 0 (RDY) indicates that the device is READY;
Bit 0 = 1 indicates that a program cycle is in progress. Bit 1 = 0
(WEN) indicates that the device is not WRITE ENABLED; Bit 1 =
1 indicates that the device is WRITE ENABLED. Non-volatile
status register Bits 2 and 3 (BP0 and BP1) indicate the level of
BLOCK WRITE PROTECTION selected. The block write protec­tion levels and corresponding status register control bits are
shown in Table 3. Note that if a RDSR instruction is executed

during a programming cycle only the RDY bit is valid. All
other bits are 1s. See Figure 7.

FIGURE 7. Read Status

TABLE 3. Block Write Protection Levels

Level Status Register Bits Array

Address

BP1 BP0 Protected

0 0 0 None
1 0 1 1800-1FFF
2 1 0 1000-1FFF
3 1 1 0000–1FFF

WRITE ENABLE (WREN): When VCC is applied to the chip, it
“powers up” in the write disable state. Therefore, all programming
modes must be preceded by a WRITE ENABLE (WREN) instruc­tion. Additionally, the WP must be held high during a write engble
instruction. At the completion of a WRITE or WRSR cycle the
device is automatically returned to the write disable state. Note
that a WRITE DISABLE (WRD) instruction will also return the
device to the write disable state. See Figure 8.

FIGURE 8. Write Enable

WRITE DISABLE (WRDI): To protect against accidental data

disturbance the WRITE DISABLE (WRDI) instruction disables all
programming modes. See Figure 9.

FIGURE 9. Write Disable

CS

SI

SO

WRDI Op-Code

DS500041-11

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NM25C640 Rev. D.2

NM25C640 64K-Bit Serial CMOS EEPROM

(Serial Periphrial Interface (SPI) Synchronous Bus)

Functional Description (Continued)

WRITE SEQUENCE: To program the device, the WRITE PRO-

TECT (WP) pin must be held high and two separate instructions
must be executed. The chip must first be write enabled via the
WRITE ENABLE instruction and then a WRITE instruction must
be executed. Moreover, the address of the memory location(s) to
be programmed must be outside the protected address field
selected by the Block Write Protection Level. See Table 3.

A WRITE command requires the following sequence. The CS line
is pulled low to select the device, then the WRITE op-code is
transmitted on the SI line followed by the high order address byte
(A12-A8) and the low order address byte (A7–A0). The leading
five bits in the high order address byte will be ignored. The address
is followed by the data (D7–D0) to be written. Programming will
start after the CS pin is forced back to a high level. Note that the
LOW to HIGH transition of the CS pin must occur during the SCK
low time immediately after clocking in the D0 data bit. See Figure

10.

FIGURE 10. End of WRITE Sequence

SCK

SI

SO

CS

D0D1D2

CS

SI

SO

Write

Op-Code

Byte H

Addr (n)

Byte L

Addr (n)

Data

(n)

Data

(n+1)

Data
(n+2)

Data
(n+3)

. . .

Data

(n+31)

CS

SI

SO

WRSR

Op-Code

SR Data

xxxxBP1BP0xx

DS500041-12

DS500041-13

The READY/BUSY status of the device can be determined by
executing a READ STATUS REGISTER (RDSR) instruction. Bit 0
= 1 indicates that the WRITE cycle is still in progress and Bit 0 =
0 indicates that the WRITE cycle has ended. During the WRITE
programming cycle (Bit 0 = 1) only the READ STATUS REGIS­TER instruction is enabled.

The NM25C640 is capable of a 32 byte PAGE WRITE operation.
After receipt of each byte of data the five low order address bits are
internally incremented by one. The eight high order bits of the
address will remain constant. If the master should transmit more
than 32 bytes of data, the address counter will “roll over,” and the
previously loaded data will be reloaded. See Figure 11.

FIGURE 11. 32 Byte Page Write

At the completion of a WRITE cycle the device is automatically
returned to the write disable state.

If the device is not WRITE enabled, the device will ignore the
WRITE instruction and return to the standby state when CS is
forced high. A new CS falling edge is required to re-initialize the
serial communication.

WRITE STATUS REGISTER (WRSR): The WRITE STATUS
REGISTER (WRSR) instruction is used to program the non­volatile status register Bits 2 and 3 (BP0 and BP1). The WRITE
PROTECT (WP) pin must be held high and two separate instruc­tions must be executed. The chip must first be write enabled via
the WRITE ENABLE instruction and then a WRSR instruction
must be executed.

The WRSR command requires the following sequence. The CS
line is pulled low to select the device and then the WRSR op-code
is transmitted on the SI line followed by the data to be pro­grammed. See Figure 12.

FIGURE 12. Write Status Register

DS500041-14

Note that the first four bits are don’t care bits followed by BP1 and
BP0 then two additional don’t care bits. Programming will start
after the CS pin is forced back to a high level. As in the WRITE
instruction the LOW to HIGH transition of the CS pin must occur
during the SCK low time immediately after clocking in the last don’t
care bit. See Figure 13.

FIGURE 13. Start WRSR Condition

The READY/BUSY status of the device can be determined by
executing a READ STATUS REGISTER (RDSR) instruction. Bit 0
= 1 indicates that the WRSR cycle is still in progress and Bit 0 =
0 indicates that the WRSR cycle has ended.

At the completion of a WRITE cycle the device is automatically
returned to the write disable state.

BP0

SCK

SI

SO

CS

DS500041-15

9

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NM25C640 Rev. D.2

NM25C640 64K-Bit Serial CMOS EEPROM

(Serial Periphrial Interface (SPI) Synchronous Bus)

Molded Small Out-Line Package (M8)

Package Number M08A

Molded Dual-In-Line Package (N)

Package Number N08E

Physical Dimensions inches (millimeters) unless otherwise noted

0.373 - 0.400

(9.474 - 10.16)

0.092

(2.337)

DIA

+

1234

8765

0.250 - 0.005
(6.35 ± 0.127)

87

0.032 ± 0.005

(0.813 ± 0.127)

Pin #1

Option 2

RAD

1

0.145 - 0.200

(3.683 - 5.080)

0.130 ± 0.005

(3.302 ± 0.127)

0.125 - 0.140

(3.175 - 3.556)

0.020

(0.508)

Min

0.018 ± 0.003

(0.457 ± 0.076)

90° ± 4°

Typ

0.100 ± 0.010

(2.540 ± 0.254)

0.040

(1.016)

0.039

(0.991)

Typ.

20° ± 1°

0.065

(1.651)

0.050

(1.270)

0.060

(1.524)

Pin #1 IDENT

Option 1

0.280

MIN

0.300 - 0.320
(7.62 - 8.128)

0.030

(0.762)

MAX

0.125

(3.175)

DIA

NOM

0.009 - 0.015

(0.229 - 0.381)

0.045 ± 0.015

(1.143 ± 0.381)

0.325

+0.040

-0.015

8.255

+1.016

-0.381

95° ± 5°

0.090

(2.286)

(7.112)

IDENT

1234

8765

0.189 - 0.197

(4.800 - 5.004)

0.228 - 0.244

(5.791 - 6.198)

Lead #1

IDENT

Seating

Plane

0.004 - 0.010

(0.102 - 0.254)

0.014 - 0.020

(0.356 - 0.508)

0.014

(0.356)

Typ.

0.053 - 0.069

(1.346 - 1.753)

0.050

(1.270)

Typ

0.016 - 0.050
(0.406 - 1.270)
Typ. All Leads

8° Max, Typ.

All leads

0.150 - 0.157

(3.810 - 3.988)

0.0075 - 0.0098
(0.190 - 0.249)
Typ. All Leads

0.04

(0.102)

All lead tips

0.010 - 0.020

(0.254 - 0.508)

x 45°

10

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NM25C640 Rev. D.2

NM25C640 64K-Bit Serial CMOS EEPROM

(Serial Periphrial Interface (SPI) Synchronous Bus)

Fairchild does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and Fairchild reserves the right at any time without notice to change said circuitry and specifications.

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