Datasheet NJW3281G, NJW1302G Datasheet (ON Semiconductor)

NJW3281G (NPN)

ces

NJW1302G (PNP)

Preferred Devi

Complementary NPN-PNP
Silicon Power Bipolar
Transistors

The NJW3281G and NJW1302G are power transistors for high

power audio, disk head positioners and other linear applications.

Features

•Exceptional Safe Operating Area

•NPN/PNP Gain Matching within 10% from 50 mA to 5 A

•Excellent Gain Linearity

•High BVCEO

•High Frequency

•These are Pb-Free Devices

Benefits

•Reliable Performance at Higher Powers

•Symmetrical Characteristics in Complementary Configurations

•Accurate Reproduction of Input Signal

•Greater Dynamic Range

•High Amplifier Bandwith

Applications

•High-End Consumer Audio Products

♦Home Amplifiers
♦Home Receivers

•Professional Audio Amplifiers

♦Theater and Stadium Sound Systems
♦Public Address Systems (PAs)

MAXIMUM RATINGS (T

Rating Symbol Value Unit

Collector-Emitter Voltage V

Collector-Base Voltage V

Emitter-Base Voltage V

Collector-Emitter Voltage - 1.5 V V

Collector Current - Continuous

Collector Current - Peak (Note 1)

Base Current - Continuous I

Total Power Dissipation @ TC = 25°C
Derate Above 25°C

Operating and Storage Junction
Temperature Range

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.

= 25°C unless otherwise noted)

J

CEO

CBO

EBO

CEX

I

C

B

P

D

TJ, T

stg

R

q

JC

R

q

JA

250 Vdc

250 Vdc

5.0 Vdc

250 Vdc

15
30

1.6 Adc

200

1.43

-āā65 to +150

0.625 °C/W

40 °C/W

Adc

W

W/°C

°C

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15 AMPERES

COMPLEMENTARY

SILICON POWER TRANSISTORS

250 VOLTS 200 WATTS

MARKING
DIAGRAM

NJWxxxG

AYWW

TO-3P

CASE 340AB

STYLES 1,2,3

xxxx = 0281 or 0302
G = Pb-Free Package
A = Assembly Location
Y = Year
WW = Work Week

ORDERING INFORMATION

Device Package Shipping

NJW3281G TO-3P

(Pb-Free)

NJW1302G TO-3P

(Pb-Free)

Preferred devices are recommended choices for future use
and best overall value.

30 Units/Rail

30 Units/Rail

© Semiconductor Components Industries, LLC, 2008

January, 2008 - Rev. 0

1 Publication Order Number:

NJW3281/D

NJW3281G (NPN) NJW1302G (PNP)

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

C

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector-Emitter Sustaining Voltage

(IC = 100 mAdc, IB = 0)

Collector Cutoff Current

(V

= 250 Vdc, IE = 0)

CB

Emitter Cutoff Current

(VEB = 5 Vdc, IC = 0)

SECOND BREAKDOWN

Second Breakdown Collector with Base Forward Biased

(VCE = 50 Vdc, t = 1 s (non-repetitive)

ON CHARACTERISTICS

DC Current Gain

(IC = 100 mAdc, VCE = 5 Vdc)
(IC = 1 Adc, VCE = 5 Vdc)
(IC = 3 Adc, VCE = 5 Vdc)
(IC = 5 Adc, VCE = 5 Vdc)
(IC = 8 Adc, VCE = 5 Vdc)

Collector-Emitter Saturation Voltage

(IC = 8 Adc, IB = 0.8 Adc)

Base-Emitter On Voltage

(IC = 8 Adc, VCE = 5 Vdc)

DYNAMIC CHARACTERISTICS

Current-Gain - Bandwidth Product

(IC = 1 Adc, VCE = 5 Vdc, f

= 1 MHz)

test

Output Capacitance

(VCB = 10 Vdc, IE = 0, f

= 1 MHz)

test

V

CEO(sus)

I

CBO

I

EBO

I

S/b

h

FE

V

CE(sat)

V

BE(on)

f

C

250 - -

Vdc

mAdc

- - 50

mAdc

- - 5

Adc

4 - -

­75
75
75
60
45

-

-

-

-

-

150
150
150

-

-

Vdc

- 0.4 0.6

Vdc

- - 1.5

T

ob

- 30 -

- - 600

MHz

pF

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2

60

TJ = 25°C

f

= 1 MHz

test

50

40

30

20

PRODUCT (MHz)

, CURRENT BANDWIDTH

10

Ta u

f

NJW3281G (NPN) NJW1302G (PNP)

TYPICAL CHARACTERISTICS

PNP NJW1302G NPN NJW3281G

VCE = 10 V

5 V

, CURRENT BANDWIDTH

f

80

60

40

PRODUCT (MHz)

20

Ta u

TJ = 25°C

f

= 1 MHz

test

VCE = 10 V

5 V

0

0.1 1 10

IC, COLLECTOR CURRENT (A)

Figure 1. Typical Current Gain

Bandwidth Product

1000

VCE = 5 V

125°C

100

, DC CURRENT GAIN

FE

h

10

0.01 0.1 1 10 100

25°C

-30°C

IC, COLLECTOR CURRENT (A)

Figure 3. DC Current Gain

1000

VCE = 20 V

0

0.1 1 10

1000

100

, DC CURRENT GAIN

FE

h

10

0.1 1 10 100

1000

IC, COLLECTOR CURRENT (A)

Figure 2. Typical Current Gain

Bandwidth Product

VCE = 5 V

125°C

25°C

-30°C

IC, COLLECTOR CURRENT (A)

Figure 4. DC Current Gain

VCE = 20 V

125°C

100

, DC CURRENT GAIN

FE

h

10

0.01 0.1 1 10 100

25°C

-30°C

IC, COLLECTOR CURRENT (A)

Figure 5. DC Current Gain

100

, DC CURRENT GAIN

FE

h

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3

125°C

25°C

-30°C

10

0.1 1 10 10

IC, COLLECTOR CURRENT (A)

Figure 6. DC Current Gain

NJW3281G (NPN) NJW1302G (PNP)

TYPICAL CHARACTERISTICS

1

3 A

1 A

0.1

IC = 0.1 A

COLLECTOR-EMITTER

SATURATION VOLTAGE (V)

0.01

0.001 0.01 0.1 1

0.5 A

IB, BASE CURRENT (A)

Figure 7. Saturation Region

1

IC/IB = 10

PNP NJW1302G NPN NJW3281G

0.1

25°C

5 A

TJ = 25°C

1

5 A

1 A

0.1

COLLECTOR-EMITTER

SATURATION VOLTAGE (V)

0.01

0.001 0.01 0.1 1

0.5 A

IC = 0.1 A

IB, BASE CURRENT (A)

3 A

Figure 8. Saturation Region

1

IC/IB = 10

0.1

25°C

TJ = 25°C

-30°C

SATURATION VOLTAGE (V)

0.01

0.01 0.1 1 10 100

125°C

Figure 9. V

IC, COLLECTER CURRENT (A)

, Collector-Emitter Saturation

CE(sat)

Voltage

1.6
VCE = 5 V

1.4

1.2

1.0

0.8

0.6

0.4

0.2

BASE-EMITTER VOLTAGE (V)

0.0

0.01 0.1 1 10 100

-30°C

25°C

125°C

IC, COLLECTER CURRENT (A)

Figure 11. V

, Base-Emitter Voltage

BE(on)

-30°C

SATURATION VOLTAGE (V)

0.01

0.01 0.1 1 10 100

Figure 10. V

125°C

IC, COLLECTER CURRENT (A)

, Collector-Emitter

CE(sat)

Saturation Voltage

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

BASE-EMITTER VOLTAGE (V)

0.0

VCE = 5 V

-30°C

25°C

125°C

0.01 0.1 1 10 100

IC, COLLECTER CURRENT (A)

Figure 12. V

, Base-Emitter Voltage

BE(on)

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4

NJW3281G (NPN) NJW1302G (PNP)

TYPICAL CHARACTERISTICS

1200

1000

800

600

400

200

, OUTPUT CAPACITANCE (pF)

ob

C

0

0 102030405060708090100

VCB, COLLECTER-BASE VOLTAGE (V)

PNP NJW1302G NPN NJW3281G

TJ = 25°C

f

= 1 MHz

Te st

Figure 13. Output Capacitance

12000

TJ = 25°C

f

= 1 MHz

10000

8000

6000

Te st

1200

1000

800

600

400

200

, OUTPUT CAPACITANCE (pF)

ob

C

0

0 20406080100

VCB, COLLECTER-BASE VOLTAGE (V)

TJ = 25°C

f

= 1 MHz

Te st

Figure 14. Output Capacitance

10000

TJ = 25°C

f

= 1 MHz

Te st

8000

6000

4000

, INPUT CAPACITANCE (pF)

ib

C

2000

012345678910

VEB, EMITTER-BASE VOLTAGE (V)

Figure 15. Input Capacitance

4000

, INPUT CAPACITANCE (pF)

ib

C

2000

0246810

VEB, EMITTER-BASE VOLTAGE (V)

Figure 16. Input Capacitance

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5

100

NJW3281G (NPN) NJW1302G (PNP)

PNP NJW1302G NPN NJW3281G

100

10

1.0

, COLLECTOR CURRENT (AMPS)

C

I

0.1

VCE, COLLECTOR EMITTER (VOLTS)

10 mSec

100 mSec

1 Sec

1000101.0 100

Figure 17. Active Region Safe Operating Area

There are two limitations on the power handling ability of
a transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate IC - V

CE

limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.

10

1.0

, COLLECTOR CURRENT (AMPS)

C

I

0.1

VCE, COLLECTOR EMITTER (VOLTS)

10 mSec

100 mSec

1 Sec

1000101.0 100

Figure 18. Active Region Safe Operating Area

The data of Figures 17 and 18 is based on T

J(pk)

= 150°C;
TC is variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power than
can be handled to values less than the limitations imposed by
second breakdown.

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NJW3281G (NPN) NJW1302G (PNP)

l

PACKAGE DIMENSIONS

TO-3P-3LD

CASE 340AB-01

ISSUE A

P

123

G

SEATING

A

B

4

B

C

Q

A

L

PLANE

E

(3°)

K

F

D3X

0.25 A

S

M

B

H

J

W

G

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS

U

3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.15 AND 0.30mm
FROM THE TERMINAL TIP.

4. DIMENSION A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS.

MILLIMETERS

DIMAMIN NOM MAX

19.70 19.90 20.10

B 15.40 15.60 15.80
C 4.60 4.80 5.00
D 0.80 1.00 1.20

E 1.45 1.50 1.65

F 1.80 2.00 2.20
G 5.45 BSC
H 1.20 1.40 1.60

J 0.55 0.60 0.75
K 19.80 20.00 20.20

L 18.50 18.70 18.90

P 3.30 3.50 3.70
Q 3.10 3.20 3.50
U 5.00 REF
W 2.80 3.00 3.20

STYLE 2:

PIN 1. ANODE

2. CATHODE

3. ANODE

4. CATHODE

STYLE 3:

PIN 1. GATE

2. DRAIN

3. SOURCE

4. DRAIN

PowerBase is a trademark of Semiconductor Components Industries, LLC.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
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