Datasheet NJW21193G, NJW21194G Datasheet (ON Semiconductor)

NJW21193G (PNP)
NJW21194G (NPN)

Preferred Devices

Silicon Power Transistors

The NJW21193G and NJW21194G utilize Perforated Emitter
technology and are specifically designed for high power audio output,
disk head positioners and linear applications.

Features

•Total Harmonic Distortion Characterized

•High DC Current Gain -

hFE = 20 Min @ IC = 8 Adc

•Excellent Gain Linearity

•High SOA: 2.25 A, 80 V, 1 Second

•These are Pb-Free Devices

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector-Emitter Voltage V

Collector-Base Voltage V

Emitter-Base Voltage V

Collector-Emitter Voltage - 1.5 V V

Collector Current - Continuous

Collector Current - Peak (Note 1)

Base Current - Continuous I

Total Power Dissipation @ TC = 25°C

Derate Above 25°C

Operating and Storage Junction

Temperature Range

CEO

CBO

EBO

CEX

I

P

TJ, T

C

B

D

stg

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance,

Junction-to-Case

Thermal Resistance,

Junction-to-Ambient

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.

R

q

JC

R

q

JA

250 Vdc

400 Vdc

5.0 Vdc

400 Vdc

16
30

5.0 Adc

200

1.6

-āā 65 to
+150

0.625 °C/W

40 °C/W

Adc

W

W/°C

°C

http://onsemi.com

16 AMPERES

COMPLEMENTARY SILICON

POWER TRANSISTORS
250 VOLTS, 200 WATTS

MARKING
DIAGRAM

NJW2119xG

TO-3P

CASE 340AB

x = 3 or 4
G = Pb-Free Package
A = Assembly Location
Y = Year
WW = Work Week

ORDERING INFORMATION

Device Package Shipping

NJW21193G TO-3P

(Pb-Free)

NJW21194G TO-3P

(Pb-Free)

Preferred devices are recommended choices for future use
and best overall value.

AYWW

30 Units/Rail

30 Units/Rail

© Semiconductor Components Industries, LLC, 2008

January, 2008 - Rev. 0

1 Publication Order Number:

NJW21193/D

NJW21193G (PNP) NJW21194G (NPN)

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

C

Characteristic

OFF CHARACTERISTICS

Collector-Emitter Sustaining Voltage

(IC = 100 mAdc, IB = 0)

Collector Cutoff Current

(VCE = 200 Vdc, IB = 0)

Emitter Cutoff Current

(VCE = 5 Vdc, IC = 0)

Collector Cutoff Current

(VCE = 250 Vdc, V

BE(off)

= 1.5 Vdc)

SECOND BREAKDOWN

Second Breakdown Collector Current with Base Forward Biased

(VCE = 50 Vdc, t = 1 s (non-repetitive)
(VCE = 80 Vdc, t = 1 s (non-repetitive)

ON CHARACTERISTICS

DC Current Gain

(IC = 8 Adc, VCE = 5 Vdc)
(IC = 16 Adc, IB = 5 Adc)

Base-Emitter On Voltage

(IC = 8 Adc, VCE = 5 Vdc)

Collector-Emitter Saturation Voltage

(IC = 8 Adc, IB = 0.8 Adc)
(IC = 16 Adc, IB = 3.2 Adc)

DYNAMIC CHARACTERISTICS

Total Harmonic Distortion at the Output
V

= 28.3 V, f = 1 kHz, P

RMS

LOAD

= 100 W

RMS

h

FE

unmatched

(Matched pair hFE = 50 @ 5 A/5 V) hFE

matched

Current Gain Bandwidth Product

(IC = 1 Adc, VCE = 10 Vdc, f

= 1 MHz)

test

Output Capacitance

(VCB = 10 Vdc, IE = 0, f

= 1 MHz)

test

Symbol Min Typ Max Unit

V

CEO(sus)

I

CEO

I

EBO

I

CEX

I

S/b

h

FE

V

BE(on)

V

CE(sat)

T

HD

f

C

T

ob

250 - - Vdc

- - 100

- - 100

- - 100

4.0

2.25

20

8

-

-

-

-

-

-

80

-

mAdc

mAdc

mAdc

- - 2.2 Vdc

-

-

-

-

-

-

0.8

0.08

1.4
4

-

-

4 - - MHz

- - 500 pF

Adc

Vdc

%

T

f, CURRENT GAIN BANDWIDTH PRODUCT (MHz)

6.5

6.0

5.5

5.0

4.5

4.0

3.5

3.0

VCE = 10 V

5 V

TJ = 25°C
f

= 1 MHz

test

PNP NJW21193G

1.0 100.1

IC COLLECTOR CURRENT (AMPS)

Figure 1. Typical Current Gain

Bandwidth Product

8.0

7.0

6.0

5.0

4.0

3.0

2.0

1.0

T

0

f, CURRENT GAIN BANDWIDTH PRODUCT (MHz)

http://onsemi.com

2

NPN NJW21194G

TJ = 25°C
f

= 1 MHz

test

1.0 100.1

IC COLLECTOR CURRENT (AMPS)

Figure 2. Typical Current Gain

Bandwidth Product

10 V

VCE = 5 V

1000

NJW21193G (PNP) NJW21194G (NPN)

TYPICAL CHARACTERISTICS

PNP NJW21193G NPN NJW21194G

1000

100

, DC CURRENT GAIN

FE

h

1000

100

, DC CURRENT GAIN

FE

h

10

TJ = 100°C

25°C

-25°C

VCE = 20 V

TJ = 100°C

25°C

-25°C

IC COLLECTOR CURRENT (AMPS)

100

, DC CURRENT GAIN

FE

h

VCE = 20 V

100101.00.1

10

IC COLLECTOR CURRENT (AMPS)

Figure 3. DC Current Gain, VCE = 20 V Figure 4. DC Current Gain, VCE = 20 V

VCE = 5 V

PNP NJW21193G

TJ = 100°C

25°C

-25°C

1000

, DC CURRENT GAIN

FE

h

100

VCE = 20 V

NPN NJW21194G

TJ = 100°C

25°C

-25°C

100101.00.1

, COLLECTOR CURRENT (A)

C

I

10

IC COLLECTOR CURRENT (AMPS)

Figure 5. DC Current Gain, VCE = 5 V Figure 6. DC Current Gain, VCE = 5 V

PNP NJW21193G

30

1.5 A

5.0

25

20

15

10

0

0

5.0 10 15 20 25

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 7. Typical Output Characteristics

100101.00.1

10

IC COLLECTOR CURRENT (AMPS)

NPN NJW21194G

35

IB = 2 A

1 A

0.5 A

TJ = 25°C TJ = 25°C

, COLLECTOR CURRENT (A)
I

30

25

20

15

10

C

5.0

0

0

5.0 10 15 20 25

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

IB = 2 A

1.5 A

1 A

0.5 A

Figure 8. Typical Output Characteristics

100101.00.1

http://onsemi.com

3

3.0

2.5

2.0

TJ = 25°C
I

= 10

C/IB

NJW21193G (PNP) NJW21194G (NPN)

TYPICAL CHARACTERISTICS

PNP NJW21193G NPN NJW21194G

1.4

TJ = 25°C

1.2
IC/IB = 10

1.0

V

0.8

BE(sat)

SATURATION VOLTAGE (VOLTS)

1.0

, BASE-EMITTER VOLTAGE (VOLTS)

BE(on)

V

0.1

1.5

1.0

0.5

0

10

TJ = 25°C

VCE = 20 V (SOLID)

V

BE(sat)

V

CE(sat)

IC, COLLECTOR CURRENT (AMPS)

Figure 9. Typical Saturation Voltages

PNP NJW21193G NPN NJW21194G

VCE = 5 V (DASHED)

IC, COLLECTOR CURRENT (AMPS)

0.6

0.4

SATURATION VOLTAGE (VOLTS)

0.2

100101.00.1

0

IC, COLLECTOR CURRENT (AMPS)

V

CE(sat)

100101.00.1

Figure 10. Typical Saturation Voltages

10

TJ = 25°C

VCE = 20 V (SOLID)

1.0

, BASE-EMITTER VOLTAGE (VOLTS)

BE(on)

V

100101.00.1

0.1

IC, COLLECTOR CURRENT (AMPS)

VCE = 5 V (DASHED)

100101.00.1

Figure 11. Typical Base-Emitter Voltage

PNP NJW21193G NPN NJW21194G

100

10 mSec

10

1 Sec

1.0

, COLLECTOR CURRENT (AMPS)

C

I

0.1

VCE, COLLECTOR EMITTER (VOLTS)

100

Figure 13. Active Region Safe Operating Area

100 mSec

1000101.0

http://onsemi.com

100

10

1.0

, COLLECTOR CURRENT (AMPS)

C

I

0.1

Figure 14. Active Region Safe Operating Area

4

Figure 12. Typical Base-Emitter Voltage

10 mSec

1 Sec

VCE, COLLECTOR EMITTER (VOLTS)

100 mSec

100

1000101.0

NJW21193G (PNP) NJW21194G (NPN)

There are two limitations on the power handling ability of
a transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate IC - V

CE

limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.

10000

1000

C, CAPACITANCE (pF)

100

TC = 25°C

f

= 1 MHz)

(test)

VR, REVERSE VOLTAGE (VOLTS)

Figure 15. NJW21193G Typical Capacitance

C

ib

C

ob

The data of Figure 13 is based on T

= 150°C; TC is

J(pk)

variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power than
can be handled to values less than the limitations imposed by
second breakdown.

10000

TC = 25°C

1000

C, CAPACITANCE (pF)

f

= 1 MHz)

100101.00.1

100

(test)

VR, REVERSE VOLTAGE (VOLTS)

Figure 16. NJW21194G Typical Capacitance

C

ib

C

ob

100101.00.1

1.2

1.1

1.0

0.9

, TOTAL HARMONIC

DISTORTION (%)

0.8

HD

T

0.7

0.6
10000010000100010010

FREQUENCY (Hz)

Figure 17. Typical Total Harmonic Distortion

http://onsemi.com

5

NJW21193G (PNP) NJW21194G (NPN)

AUDIO PRECISION
MODEL ONE PLUS

TOTAL HARMONIC

DISTORTION

ANALYZER

SOURCE

AMPLIFIER

50 W

+50 V

DUT

0.5 W

DUT

-50 V

Figure 18. Total Harmonic Distortion Test Circuit

0.5 W

8.0 W

http://onsemi.com

6

NJW21193G (PNP) NJW21194G (NPN)

l

PACKAGE DIMENSIONS

TO-3P-3LD

CASE 340AB-01

ISSUE A

P

123

G

SEATING

A

B

4

B

C

Q

A

L

PLANE

E

(3°)

K

F

D3X

0.25 A

S

M

B

H

J

W

G

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS

U

3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.15 AND 0.30mm
FROM THE TERMINAL TIP.

4. DIMENSION A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS.

MILLIMETERS

DIMAMIN NOM MAX

19.70 19.90 20.10

B 15.40 15.60 15.80
C 4.60 4.80 5.00
D 0.80 1.00 1.20
E 1.45 1.50 1.65
F 1.80 2.00 2.20
G 5.45 BSC
H 1.20 1.40 1.60
J 0.55 0.60 0.75
K 19.80 20.00 20.20
L 18.50 18.70 18.90
P 3.30 3.50 3.70
Q 3.10 3.20 3.50
U 5.00 REF

W 2.80 3.00 3.20

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

Literature Distribution Center for ON Semiconductor
 P.O. Box 5163, Denver, Colorado 80217 USA
 Phone : [phone] or 800-344-3860 Toll Free USA/Canada
 Fax : [phone] or 800-344-3867 Toll Free USA/Canada
 Email: [e-mail]

N. American Technical Support: 800-282-9855 Toll Free
 USA/Canada

Europe, Middle East and Africa Technical Support:

 Phone: [phone]

Japan Customer Focus Center

 Phone: [phone]

http://onsemi.com

ON Semiconductor Website: www.onsemi.com

Order Literature: http://www.onsemi.com/orderlit

For additional information, please contact your loca
Sales Representative

NJW21193/D

7