Datasheet NJG1106KB2 Datasheet (JRC)

NJG1106KB2
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800MHz BAND LNA GaAs MMIC
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GENERAL DESCRIPTION
NJG1106KB2 is a low noise amplifier GaAs MMIC
designed for 800MHz band cellular phone handsets.
This amplifier provides low noise figure of 1.3dB and low current consumption of 3mA at low supply voltage of 2.7V.
NJG1106KB2 includes internal self-bias circuit and input DC blocking capacitor in a ultra small and ultra thin package of FLP6-B2.
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FEATURES
lLow voltage operation +2.7V typ. lLow current consumption 2.5mA typ. lSmall signal gain 17dB typ. @f=820MHz lLow noise figure 1.3dB typ. @f=820MHz lHigh Input IP3 -4dBm typ. @f=820.0+820.1MHz lHigh Output IP3 +13dBm typ. @f=820+820.1MHz lUltra small & ultra thin package FLP6-B2 (Mount Size: 2.1x2.0x0.75mm)
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PIN CONFIGURATION
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NJG1106KB2
KB2 Type
(Top View)
4
5
AM P
6
Note: Specifications and description listed in this catalog are subject to change without prior notice.
3
2
1
PIN CONNECTION
1.RF
2.GND
3.EXTCAP
4.GND
5.GND
6.RF
Package orientation mark
out
in
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NJG1106KB2
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ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL CONDITIONS RATINGS UNITS
(Ta=+25°C, Zs=Zl=50)
Drain Voltage V
DD
6.0 V
Input Power Pin VDD=2.7V +15 dBm Power Dissipation P
Operating Temp. T Storage Temp. T
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ELECTRICAL CHARACTERISTICS
D
opr
stg
Tj=125°C, mount on PCB FR4 20X20X0.2mm
450 mW
-40 ~ +85 °C
-55 ~ +125 °C
(VDD=2.7V, f=820MHz, Ta=+25°C, Zs=Zl=50)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Operating frequency freq 800 820 1000 MHz Drain voltage V Operating current I
DD
DD
RF OFF - 2.5 3.4 mA
2.5 2.7 5.5 V
Small signal gain Gain 15.0 17.0 19.0 dB Gain flatness G
flat
f=810~885MHz - 0.5 1.0 dB
Noise figure NF - 1.3 1.5 dB Pout at 1dB gain
compression point Input 3rd order
Intercept point Output 3rd order
Intercept point RF Input port
VSWR RF Output port
VSWR
P
-1dB
VDD=2.7V, f=820MHz -4.0 0.0 - dBm
IIP3 f=820.0+820.1MHz -8.0 -4.0 - dBm
OIP3 f=820.0+820.1MHz +9.0 +13.0 - dBm
VSWR
VSWR
VDD=2.7V, f=820MHz - 1.5 2.0
i
VDD=2.7V, f=820MHz - 1.5 2.0
o
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NJG1106KB2
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TERMINAL INFORMATION
Pin Function Description
RF output and voltage supply pin. External matching circuits and a bypass
1 RFout
2,4,5 GND
3 EXTCAP 6 RFin
capacitor is required. L4 is a RF choke inductor and C1 is a DC blocking capacitor. These elements are used as output matching circuit. C2 is a bypass capacitor. (Please refer to “RECOMMENDED CIRCUIT”) Ground pin. To keep good RF grounding performance, please use multiple via holes to connect with ground plane and this pin. An external bypass capacitor is required. (Please refer to “RECOMMENDED CIRCUIT”) RF input pin. A DC blocking capacitor is not required. An external matching circuit is required. (Please refer to “RECOMMENDED CIRCUIT”)
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NJG1106KB2
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TYPICAL CHARACTERISTICS
NJG1106KB2 Gain,NF vs. Freq VDD=2.7V,IDD=2.9mA,Ta=25oC
20
Gain
15
10
Gain (dB)
5
NF
0
700 750 800 850 900 950 1000
freq (GHz)
NJG1106KB2 Pout,Gain vs. Pin
VDD=2.7V, IDD=2.9mA, Freq=820MHz, Ta=25oC
5
0
-5
Gain
P-1dB=-0.5dBm
3.0
2.5
2.0
1.5
1.0
20
15
NJG1106KB2 S11,S21,S12,S22 vs. Freq
25 20 15 10
NF (dB)
-5
-10
S11,S21,S22 (dB)
-15
-20
-25
VDD=2.7V, IDD=2.9mA, Freq=820+820.1MHz, Ta=25oC
20
-20
VDD=2.7V, IDD=2.9mA, Ta=25oC
S21
5 0
0 500 1000 1500 2000
S11
S22
S12
Freq (GHz)
NJG1106KB2 Pout,IM3 vs. Pin
0
Pout
50 40 30 20 10 0
-10
-20
-30
-40
-50
S12 (dB)
-10
Pout (dBm)
-15
-20
-25
-45 -40 -35 -30 -25 -20 -15 -10 -5
Pout
Pin (dBm)
10
5.0
Gain (dB)
-40
Pout (dBm)
-60
-80
-100
-45 -40 -35 -30 -25 -20 -15 -10 -5
IM3
OIP3=+13.7dBm IIP3=-4.1dBm
Pin (dBm)
Equations of OIP3 and IIP3
=3OIP
3IM-Pout×3
2
Gain-3OIP=3IIP @ Pin=-40dBm
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NJG1106KB2
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Equations of OIP3 and IIP3
TYPICAL CHARACTERISTICS
NJG1106KB2 Gain,NF vs. VDD
Freq=820MHz,Ta=25oC
18.0
2.0
NJG1106KB2 IDD vs. VDD
Freq=820MHz,Ta=25oC
3.2
17.8
Gain
17.6
17.4
Gain (dB)
NF
17.2
17.0
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
VDD (V)
NJG1106KB2 OIP3,IIP3 vs. VDD
Freq=820+820.1MHz, Ta=25oC
20
IIP3
18
16
OIP3
14
OIP3(dBm)
12
1.8
1.6
1.4
1.2
1.0
0
-2
-4
-6
-8
NF (dB)
IIP3 (dBm)
3.1
3.0
2.9
IDD (mA)
2.8
2.7
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
VDD (V)
NJG1106KB2 OIP3,IIP3 vs. Freq
VDD=2.7V, IDD=3mA, Freq=820+820.1MHz, Ta=25oC
20
18
16
14
OIP3 (dBm)
12
IIP3
OIP3
0
-2
-4
-6
-8
IIP3 (dBm)
10
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
VDD (V)
-10
10
800 820 840 860 880 900
freq (MHz)
3IM-Pout×3
=3OIP
2
@ Pin=-40dBm
Gain-3OIP=3IIP
-10
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NJG1106KB2
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TYPICAL CHARACTERISTICS
NJG1106KB2 Gain,NF vs. Ta
VDD=2.7V,Freq=820MHz
20
18
16
14
Gain (dB)
12
10
-50 0 50 100
Gain
NF
Ta (oC)
NJG1106KB2 OIP3,IIP3 vs. Ta
VDD=2.7V,Freq=820+820.1MHz
20
5.0
4.0
3.0
2.0
1.0
0.0
0
NF (dB)
NJG1106KB2 IDD vs. Ta
VDD=2.7V,Freq=820MHz
4.0
3.5
3.0
IDD (mA)
2.5
2.0
-50 0 50 100
Ta (oC)
18
16
14
OIP3 (dBm)
12
10
-50 0 50 100
IIP3
OIP3
Ta (oC)
-2
-4
-6
-8
-10
IIP3 (dBm)
Equations of OIP3 and IIP3
=3OIP
3IM-Pout×3
2
Gain-3OIP=3IIP @ Pin=-40dBm
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TYPICAL CHARACTERISTICS
NJG1106KB2 S11 vs. Freq(to 20GHz)
VDD=2.7V, IDD=2.9mA, Ta=25oC
25 20 15 10
5 0
-5
S11 (dB)
-10
-15
-20
-25 0 5 10 15 20
Freq (GHz)
NJG1106KB2 S22 vs. Freq(to 20GHz)
VDD=2.7V, IDD=2.9mA, Ta=25oC
25 20 15 10
5 0
-5
S22 (dB)
-10
-15
-20
-25 0 5 10 15 20
Freq (GHz)
NJG1106KB2 S21 vs. Freq(to 20GHz)
VDD=2.7V, IDD=2.9mA, Ta=25oC
25 20 15 10
5 0
-5
S21 (dB)
-10
-15
-20
-25 0 5 10 15 20
Freq (GHz)
NJG1106KB2 S12 vs. Freq(to 20GHz)
VDD=2.7V, IDD=2.9mA, Ta=25oC
50 40 30 20 10
0
-10
S12 (dB)
-20
-30
-40
-50 0 5 10 15 20
Freq (GHz)
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TYPICAL CHARACTERISTICS
Scattering Parameter Table
VDD=2.7V, IDD=2.9mA, Zo=50
Freq
(MHz)
(units)
S11 S21 S12 S22
mag
ang
(deg)
100 0.996 -1.8 1.298 -142.2 0.005 70.0 0.967 -2.3 200 0.995 -4.8 1.846 -164.1 0.003 -6.6 0.953 -3.7 300 0.993 -7.2 2.029 179.1 0.006 38.5 0.942 -4.9 400 0.982 -9.6 2.056 165.7 0.006 36.0 0.939 -6.1 500 0.964 -11.7 2.029 155.1 0.007 47.8 0.931 -7.3 600 0.947 -13.9 1.964 145.6 0.006 54.7 0.928 -8.5 700 0.930 -15.5 1.892 137.5 0.008 55.8 0.918 -9.7 800 0.914 -17.3 1.816 130.0 0.008 60.4 0.916 -10.9
900 0.897 -18.7 1.733 123.2 0.009 62.5 0.906 -12.2 1000 0.884 -20.2 1.659 117.0 0.009 61.0 0.903 -13.4 1100 0.874 -21.5 1.582 111.1 0.010 69.4 0.898 -14.7 1200 0.860 -22.6 1.513 105.8 0.011 70.7 0.893 -16.1 1300 0.851 -23.8 1.449 100.7 0.012 72.6 0.886 -17.3 1400 0.838 -24.9 1.385 96.1 0.012 80.1 0.883 -18.9 1500 0.831 -26.1 1.330 91.4 0.014 77.4 0.878 -20.0 1600 0.822 -27.0 1.279 87.0 0.014 84.4 0.874 -21.3 1700 0.815 -28.2 1.235 83.0 0.016 85.1 0.871 -22.7 1800 0.809 -29.7 1.194 78.9 0.017 90.7 0.869 -24.1 1900 0.803 -30.6 1.153 75.2 0.018 87.7 0.865 -25.4 2000 0.796 -31.8 1.120 71.8 0.019 91.9 0.864 -26.8
mag
(units)
ang
(deg)
mag
(units)
ang
(deg)
mag
(units)
ang
(deg)
Network Analyzer Port1
4
5
AMP
6
Reference Plane
3
1000pF
2
1
Network Analyzer Port2
Note
VDD (=2.8V) is supplied through “BIAS CONNECT (PORT2)” of Network Analyzer.
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NJG1106KB2
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RECOMMENDED CIRCUIT (f=810~885MHz)
( Top View )
RF Input
L1
L2
4
5
A MP
6
3
C3
2
L3
1
C1
RF Output
L4
VDD=2.7V
C2
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NJG1106KB2
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RECOMMENDED PCB DESIGN
(Top View)
RF IN
NJG1106
L2
C3
L4
C1
L1
L3
RF OUT
C2
PCB SIZE: 14.0x14.0mm PCB: FR4, t=0.2mm
MICROSTRIP LINE WIDTH=0.4mm(Zo=50)
Parts List (f=810~885MHz)
Parts ID Constant Comment
L1 82nH TAIYO-YUDEN HK1005 Series L2 33nH TAIYO-YUDEN HK1608 Series L3 39nH TAIYO-YUDEN HK1005 Series L4 12nH TAIYO-YUDEN HK1005 Series
C1 4pF MURATA GRM36 Series
C2, C3 1000pF MURATA GRM36 Series
NOTES:
1. Please use L1 to stabilize amplifier. This element pull input impedance down at low frequency region (up to 400MHz).
2. Please use chip inductor which has low resistance at input circuit. (A low resistance inductor of 1608 size (1.6mm x 0.8mm) is used in the circuit example above.) Because any losses at input circuit cause NF degradation.
3. The capacitor C3 is a bypass capacitor connected with self-biasing resistor. The small signal gain can be controlled by this capacitor. (Gain=18.5dB @ C3=30pF)
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NJG1106KB2
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Lead material : Copper
lease
[CAUTION]
PACKAGE OUTLINE (FLP6-B2)
2.0±0.1
6 5 4
1 2 3
0.65 0.65
+0.1
0.2-0.05
0.75±0.05
0.20.2
2.1±0.1
1.7±0.1
+0.1
0.15-0.05
Lead surface finish : Solder plating
0.1 0.1
Molding material : Epoxy resin UNIT : mm Weight : 6.5mg
Cautions on using this product
This product contains Gallium-Arsenide (GaAs) which is a harmful material.
Do NOT eat or put into mouth.
Do NOT dispose in fire or break up this product.
Do NOT chemically make gas or powder with this product.
To waste this product, please obey the relating law of your country.
This product may be damaged with electric static discharge (ESD) or spike voltage. P handle with care to avoid these damages.
The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights.
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