1.5/1.9GHz LOW NOISE AMPLIFIER
GaAs MMIC
n GENERAL DESCRIPTION n PACKAGE OUTLINE
NJG1103F1 is a Low Noise Amplifier GaAs MMIC
designed for 1.5GHz and 1.9GHz band digital cellular
phone and Japanese PHS handsets.
This amplifier provides low noise figure, high gain
and high IP3 operated by single low positive power supply.
This amplifier can be tuned to wide frequency point.
(Best for 1.5GHz or 1.9GHz)
Small package of MTP6-1 is adopted.
nFEATURES
lLow voltage operation +2.7V typ.
lLow current consumption 3mA typ.
lHigh small signal gain 16dB typ. @f=1.489GHz
14dB typ. @f=1.9GHz
l Low Noise Figure 1.2dB typ. @f=1.489GHz
1.4dB typ. @f=1.9GHz
l High Input IP3 -4dBm typ. @f=1.489+1.4891GHz
-3dBm typ. @f=1.9+1.9001GHz
l High Output IP3 +12dBm typ. @f=1.489+1.4891GHz
+11dBm typ. @f=1.9+1.9001GHz
lPackage MTP6-1 (Mount Size: 2.8 x 2.9 x 1.2mm)
nPIN CONFIGURATION
1
2
3
Note: is package orientation mark.
F1 TYPE
(Top View)
6
Pin connection
1.LNAOUT
2.EXTIND
5
3.GND
4.GND
5.GND
4
- 1 -
n ABSOLUTE MAXIMUM RATINGS
(Ta=+25°C, Zs=Zl=50Ω )
PARAMETER SYMBOL CONDITIONS RATINGS UNITS
Drain Voltage V
Input Power P
Power Dissipation P
Operating Temperature T
Storage Temperature T
DD
opr
stg
in
D
VDD=2.7V +10 dBm
5.0 V
150 mW
-40~+85 °C
-55~+125 °C
n ELECTRICAL CHARACTERISTICS 1 (1.5GHz Band)
(VDD=2.7V, f=1.489GHz, Ta=+25°C, Zs=Zl=50Ω , Circuit: Application 1)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Operating Frequency freq1 1.470 1.489 1.520 GHz
Drain Voltage V
Operating Current I
DD
DD
RF OFF - 3.0 3.8 mA
2.5 2.7 4.5 V
Small Signal Gain Gain 14.0 16.0 18.0 dB
Gain Flatness G
flat
f=1.47~1.52GHz - 0.5 1.0 dB
Noise Figure NF - 1.2 1.4 dB
Pout at 1dB Gain
Compression point
Input 3rd Order
Intercept Point
LNAIN Port VSWR VSWR
LNAOUT Port VSWR VSWR
P
-1dB
-6.0 -2.0 - dBm
IIP3 f=1.489+1.4891GHz -7.0 -4.0 - dBm
i
o
- 2.0 3.0
- 2.0 3.0
n ELECTRICAL CHARACTERISTICS 2 (1.9GHz Band)
(VDD=2.7V, f=1.9GHz, Ta=+25°C, Zs=Zl=50Ω , Circuit: Application 2)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Operating Frequency freq2 1.89 1.90 1.92 GHz
Drain Voltage V
Operating Current I
DD
DD
RF OFF - 3.0 3.8 mA
2.5 2.7 4.5 V
Small Signal Gain Gain 12.0 14.0 16.0 dB
Gain Flatness G
flat
f=1.89~1.92GHz - 0.5 1.0 dB
Noise Figure NF - 1.4 1.6 dB
Pout at 1dB Gain
Compression point
Input 3rd Order
Intercept Point
LNAIN Port VSWR VSWR
LNAOUT Port VSWR VSWR
P
-1dB
-4.5 -0.5 - dBm
IIP3 f=1.9+1.9001GHz -6.0 -3.0 - dBm
i
o
- 2.0 3.0
- 2.0 3.0
- 2 -
n TYPICAL CHARACTERISTICS (1.5GHz Band)
NF,Gain vs.frequency
(VDD=2.7V,IDD=3.0mA)
2.6
2.4
2.2
2
1.8
1.6
NF(dB)
1.4
1.2
1
0.8
0.6
1.4 1.42 1.44 1.46 1.48 1.5 1.52 1.54 1.56 1.58 1.6
NF
Gain
frequency(GHz)
20
18
16
14
12
10
8
6
4
2
0
Gain(dB)
S21,S11,S22,S12 vs. frequency
25
20
15
10
5
0
-5
-10
S21,S11,S22(dB)
-15
-20
-25
0.5 0.75 1 1.25 1.5 1.75 2 2.25 2.5
(VDD=2.7V,IDD=3.0mA)
S21
S12
frequency(GHz)
S22
S11
50
40
30
20
10
0
-10
-20
-30
-40
-50
S12(dB)
Pin vs. Pout
(VDD=2.7V,IDD=3.0mA,freq=1.489GHz)
10
5
0
-5
-10
-15
Pout(dBm)
-20
-25
-30
-40 -35 -30 -25 -20 -15 -10 -5 0
Pin(dBm)
Gain vs. V
( f=1.489GHz )
17
P-1dB=-1.1dBm
DD
(VDD=2.7V,IDD=3.0mA,f=1489+1489.1MHz)
10
0
-10
-20
-30
-40
Pout
IM3
Pout,IM3(dBm)
-50
-60
IIP3=-3.8dBm
-70
-40 -35 -30 -25 -20 -15 -10 -5 0
Pin(dBm)
NF,IDD vs. V
DD
( f=1.489GHz )
1.2
3.4
16.5
16
15.5
Gain(dB)
15
14.5
14
2.5 3 3.5 4 4.5 5
VDD(V)
1.1
NF
1
NF(dB)
0.9
0.8
I
DD
0.7
2.5 3 3.5 4 4.5 5
VDD(V)
3.3
3.2
3.1
3
2.9
- 3 -
(mA)
DD
I
n TYPICAL CHARACTERISTICS (1.5GHz Band)
- 4 -
n TYPICAL CHARACTERISTICS (1.5GHz Band)
S21 vs. frequency(~20GHz)
(VDD=2.7V,IDD=3.0mA)
25
20
15
10
5
0
-5
S21(dB)
-10
-15
-20
-25
0 2 4 6 8 10 12 14 16 18 20
frequency(GHz)
S12 vs. frequency(~20GHz)
(VDD=2.7V,IDD=3.0mA)
50
40
30
20
10
0
-10
S12(dB)
-20
-30
-40
-50
0 2 4 6 8 10 12 14 16 18 20
frequency(GHz)
S11 vs. frequency(~20GHz)
(VDD=2.7V,IDD=3.0mA)
25
20
15
10
5
0
-5
S11(dB)
-10
-15
-20
-25
0 2 4 6 8 10 12 14 16 18 20
frequency(GHz)
S22 vs. frequency(~20GHz)
(VDD=2.7V,IDD=3.0mA)
25
20
15
10
5
0
-5
S22(dB)
-10
-15
-20
-25
0 2 4 6 8 10 12 14 16 18 20
frequency(GHz)
- 5 -
n TYPICAL CHARACTERISTICS (1.5GHz Band)
Scattering Parameter Table 1
VDD=2.7V, IDD=3.0mA, Zo=50Ω
Freq
(GHz)
0.1 1.000 -3.577 0.030 -96.974 0.000 -28.893 1.000 -3.994
0.2 1.000 -7.804 0.008 29.498 0.001 123.060 1.000 -8.157
0.3 1.000 -11.749 0.017 -17.030 0.001 90.574 1.000 -11.932
0.4 1.000 -15.677 0.039 -22.484 0.001 61.254 1.000 -15.939
0.5 1.000 -18.892 0.069 -35.493 0.002 70.970 1.000 -19.427
0.6 1.000 -22.855 0.105 -43.917 0.002 68.009 1.000 -23.659
0.7 0.989 -25.943 0.148 -52.340 0.002 71.027 0.999 -27.163
0.8 1.000 -29.192 0.211 -60.102 0.002 52.546 0.999 -31.190
0.9 0.967 -32.626 0.283 -68.097 0.001 54.258 0.993 -34.941
1.0 0.978 -34.942 0.384 -76.173 0.001 65.410 0.992 -39.139
1.1 0.952 -38.109 0.517 -84.022 0.001 -172.907 0.990 -43.543
1.2 0.958 -40.122 0.721 -92.837 0.001 -143.350 0.979 -48.600
1.3 0.939 -42.825 1.026 -103.156 0.004 -145.335 0.960 -55.801
1.4 0.944 -45.403 1.595 -118.935 0.008 -153.556 0.893 -67.092
1.5 0.912 -49.324 2.620 -147.296 0.017 -174.933 0.647 -88.575
1.6 0.848 -51.073 3.159 163.534 0.026 141.392 0.117 -8.962
1.7 0.835 -48.490 2.335 124.924 0.023 107.004 0.638 -2.204
1.8 0.854 -48.500 1.669 105.980 0.018 92.352 0.834 -16.766
1.9 0.859 -49.077 1.305 94.208 0.015 84.686 0.896 -24.947
2.0 0.856 -49.978 1.080 86.597 0.014 83.498 0.933 -30.122
2.1 0.858 -50.862 0.930 79.499 0.013 82.364 0.941 -33.659
2.2 0.843 -51.565 0.827 74.248 0.012 82.389 0.958 -36.464
2.3 0.843 -52.644 0.752 69.058 0.012 82.449 0.959 -38.653
2.4 0.825 -53.066 0.693 65.124 0.012 84.137 0.969 -40.685
2.5 0.823 -54.104 0.651 60.824 0.011 87.269 0.967 -42.276
2.6 0.806 -54.425 0.618 56.840 0.012 89.464 0.975 -44.085
2.7 0.805 -55.530 0.592 52.933 0.012 91.483 0.974 -45.755
2.8 0.793 -56.240 0.567 49.451 0.013 93.498 0.980 -47.284
2.9 0.783 -57.285 0.550 45.760 0.013 92.174 0.975 -48.847
3.0 0.778 -58.456 0.536 41.775 0.013 94.705 0.980 -50.377
(units)
S11 S21 S12 S22
mag
ang
(deg)
mag
(units)
ang
(deg)
mag
(units)
ang
(deg)
mag
(units)
ang
(deg)
- 6 -
S11
Scattering Parameter Evaluation Circuit
8.2nH
1000pF
V
DD
n TYPICAL CHARACTERISTICS (1.9GHz Band)
NF,Gain vs.frequency
(VDD=2.7V,IDD=3.0mA)
2.6
2.4
2.2
2
1.8
1.6
NF(dB)
1.4
1.2
1
0.8
0.6
1.8 1.82 1.84 1.86 1.88 1.9 1.92 1.94 1.96 1.98 2
NF
Gain
20
18
16
14
12
10
8
6
4
2
0
Gain(dB)
frequency(GHz)
Pin vs. Pout
(VDD=2.7V,IDD=3.0mA,freq=1.9GHz)
10
5
0
-5
-10
-15
Pout(dBm)
-20
-25
-30
-40 -35 -30 -25 -20 -15 -10 -5 0
Pin(dBm)
P-1dB=-0.5dBm
S21,S11,S22,S12 vs. frequency
(VDD=2.7V,IDD=3.0mA)
25
20
15
10
5
0
-5
-10
S21,S11,S22(dB)
-15
-20
-25
1 1.25 1.5 1.75 2 2.25 2.5 2.75 3
frequency(GHz)
(VDD=2.7V,IDD=3.0mA,f=1900+1900.1MHz)
10
0
-10
-20
-30
-40
Pout,IM3(dBm)
-50
-60
-70
-40 -35 -30 -25 -20 -15 -10 -5 0
Pout
Pin(dBm)
S21
S12
IM3
IIP3=-3.2dBm
S11
S22
50
40
30
20
10
0
-10
-20
-30
-40
-50
S12(dB)
15
14.5
14
13.5
Gain(dB)
13
12.5
12
2.5 3 3.5 4 4.5 5
Gain vs. V
( f=1.9GHz )
VDD(V)
DD
NF,IDD vs. V
DD
( f=1.9GHz )
1.4
1.3
1.2
NF(dB)
1.1
1
0.9
2.5 3 3.5 4 4.5 5
NF
I
DD
VDD(V)
3.4
3.3
3.2
3.1
3
2.9
- 7 -
(mA)
DD
I
n TYPICAL CHARACTERISTICS (1.9GHz Band)
- 8 -
n TYPICAL CHARACTERISTICS (1.9GHz Band)
S21 vs. frequency(~20GHz)
(VDD=2.7V,IDD=3.0mA)
25
20
15
10
5
0
-5
S21(dB)
-10
-15
-20
-25
0 2 4 6 8 10 12 14 16 18 20
frequency(GHz)
S12 vs. frequency(~20GHz)
(VDD=2.7V,IDD=3.0mA)
50
40
30
20
10
0
-10
S12(dB)
-20
-30
-40
-50
0 2 4 6 8 10 12 14 16 18 20
frequency(GHz)
S11 vs. frequency(~20GHz)
(VDD=2.7V,IDD=3.0mA)
25
20
15
10
5
0
-5
S11(dB)
-10
-15
-20
-25
0 2 4 6 8 10 12 14 16 18 20
frequency(GHz)
S22 vs. frequency(~20GHz)
(VDD=2.7V,IDD=3.0mA)
25
20
15
10
5
0
-5
S22(dB)
-10
-15
-20
-25
0 2 4 6 8 10 12 14 16 18 20
frequency(GHz)
- 9 -
n TYPICAL CHARACTERISTICS (1.9GHz Band)
Scattering Parameter Table 2
VDD=2.7V, IDD=3.0mA, Zo=50Ω
Freq
(GHz)
(units)
0.1 1.000 -3.466 0.013 -99.853 0.001 -40.688 1.000 -3.792
0.2 1.000 -7.836 0.003 120.878 0.000 111.001 1.000 -7.797
0.3 1.000 -11.376 0.011 -23.230 0.001 77.901 1.000 -11.547
0.4 1.000 -15.369 0.024 -31.645 0.001 60.826 1.000 -15.222
0.5 1.000 -18.524 0.045 -34.983 0.002 73.639 1.000 -18.774
0.6 1.000 -22.254 0.068 -44.466 0.002 64.832 1.000 -22.517
0.7 0.987 -25.261 0.096 -51.466 0.002 59.880 0.998 -25.988
0.8 0.994 -28.510 0.134 -58.880 0.002 62.909 0.997 -29.586
0.9 0.962 -31.527 0.173 -65.887 0.002 62.762 0.994 -32.980
1.0 0.972 -33.806 0.227 -72.166 0.001 64.214 0.994 -36.537
1.1 0.946 -36.765 0.287 -80.123 0.001 59.903 0.993 -40.081
1.2 0.951 -38.499 0.370 -86.666 0.000 104.075 0.990 -43.600
1.3 0.931 -40.743 0.466 -93.543 0.001 -144.742 0.987 -47.623
1.4 0.936 -42.455 0.612 -101.148 0.002 -131.875 0.979 -52.301
1.5 0.922 -44.128 0.816 -109.855 0.004 -140.321 0.962 -58.048
1.6 0.927 -46.084 1.122 -120.983 0.007 -150.577 0.927 -66.488
1.7 0.915 -48.182 1.603 -137.240 0.012 -161.035 0.830 -79.157
1.8 0.900 -50.392 2.281 -162.468 0.018 -178.320 0.584 -100.354
1.9 0.853 -51.550 2.711 159.780 0.026 152.338 0.052 -128.112
2.0 0.829 -50.493 2.315 125.880 0.026 124.607 0.468 12.049
2.1 0.835 -49.844 1.803 104.689 0.023 107.196 0.718 -6.837
2.2 0.829 -49.732 1.426 91.557 0.020 99.244 0.827 -17.772
2.3 0.834 -50.427 1.192 82.277 0.018 94.680 0.876 -24.741
2.4 0.821 -50.628 1.027 75.650 0.017 92.857 0.906 -29.743
2.5 0.821 -51.483 0.922 69.553 0.016 91.557 0.920 -33.371
2.6 0.806 -51.476 0.841 64.184 0.015 91.315 0.934 -36.756
2.7 0.805 -52.354 0.782 59.683 0.015 91.885 0.939 -39.453
2.8 0.798 -52.928 0.731 55.213 0.014 91.583 0.947 -41.774
2.9 0.786 -53.597 0.692 51.129 0.015 95.367 0.945 -43.991
3.0 0.784 -54.637 0.665 46.939 0.015 101.051 0.955 -46.322
S11 S21 S12 S22
mag
ang
(deg)
mag
(units)
ang
(deg)
mag
(units)
ang
(deg)
mag
(units)
ang
(deg)
- 10 -
S11
5.6nH
Scattering Parameter Evaluation Circuit
1000pF
V
DD
n RECOMMEND CIRCUIT 1 (1.5GHz Band)
IN
8.2nH
n RECOMMEND CIRCUIT 2 (1.9GHz Band)
8.2nH
5.6nH
1000pF
V
Zo=50Ω
1000pF
V
DD
DD
IN
Zo=50Ω
OUT
4.7nH
- 11 -
n RECOMMENDED PCB DESIGN
(Top View)
L3
C1
V
IN OUT
L2
PCB : FR4, t=0.2mm
MICROSTRIP LINE WIDTH=0.4mm(Z0=50Ω )
PCB SIZE : 14.0x14.0mm
PARTS LIST
PARTS ID 1.5GHz 1.9GHz COMMENT
L1 8.2nH 4.7nH TAIYO-YUDEN (HK1005)
L2 10nH 5.6nH TAIYO-YUDEN (HK1005)
L3 8.2nH 5.6nH TAIYO-YUDEN (HK1005)
C1 1000pF 1000pF MURATA (GRM36)
- 12 -
n
• To waste this product, please obey the relating law of your country.
with care to avoid these damages .
PACKAGE OUTLINE (MTP6-1)
Lead material : Copper
Lead surface finish : Solder plating
Molding material : Epoxy resin
UNIT : mm
Weight : 15mg
Cautions on using this product
This product contains Gallium-Arsenide (GaAs) which is a harmful material.
• Do NOT eat or put into mouth.
• Do NOT dispose in fire or break up this product.
• Do NOT chemically make gas or powder with this product.
This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle
The specifications on this databook are only
given for information , without any guarantee
as regards either mistakes or omissions. The
application circuits in this databook are
described only to show representative usages
of the product and not intended for the
guarantee or permission of any right including
the industrial rights.
- 13 -