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NJG1102F1
LOW NOISE AMPLIFIER GaAs MMIC
6.LNAIN
nGENERAL DESCRIPTION nPACKAGE OUTLINE
NJG1102F1 is a Low Noise Amplifier GaAs MMIC
designed for 800MHz band cellular phone handsets.
This amplifier provides low current consumption and
low noise figure at low supply voltage of 2.5V, low noise
of 1.5dB and low current consumption of 3mA at supply
voltage of 2.7V.
NJG1102F1 includes internal self-bias circuit and input
DC blocking capacitor with small package of MTP6-1.
nFEATURES
lLow voltage operation +2.7V typ.
lLow current consumption 3mA typ.
lHigh small signal gain 17dB typ. @f=820MHz
lLow noise figure 1.4dB typ. @f=820MHz
lHigh Input IP3 -3dBm typ. @f=820.0+820.1MHz
lHigh output IP3 14dBm typ. @f=820.0+820.1MHz
lPackage MTP6-1 (Mount Size: 2.8 x 2.9 x 1.2mm)
NJG1102F1
nPIN CONFIGURATION
1
2
3
Note: is package orientation mark.
F1 TYPE
(Top View)
6
Pin connection
1.LNAOUT
2.NC
5
3.GND
4.GND
5.GND
4
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NJG1102F1
nABSOLUTE MAXIMUM RATINGS
(Ta=25°C, Zs=Zl=50Ω)
PARAMETER SYMBOL CONDITIONS RATINGS UNITS
Drain Voltage V
Input Power P
Power Dissipation P
Operating Temperature T
Storage Temperature T
DD
opr
stg
in
D
VDD=2.7V +10 dBm
5.0 V
150 mW
-40~+85 °C
-55~+125 °C
nELECTRICAL CHARACTERISTICS
(VDD=2.7V,f=820MHz,Ta=+25°C, Zs=Zl=50Ω)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Operating Frequency freq 800 820 1000 MHz
Drain Voltage V
Operating Current I
DD
DD
RF OFF - 3.0 4.0 mA
2.5 2.7 4.5 V
Small Signal Gain Gain 15.0 17.0 19.0 dB
Gain Flatness G
flat
fRF=810~885MHz
- 0.5 1.0 dB
Noise Figure NF - 1.4 1.6 dB
Pout at 1dB Gain
Compression point
Input 3rd Order
Intercept Point
RFIN Port VSWR VSWR
RFOUT Port VSWR VSWR
P
-1dB
-3.0 +1.0 - dBm
IIP3 f=820.0~820.1MHz -7.0 -3.0 - dBm
i
o
- 2.0 3.0
- 2.0 3.0
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NJG1102F1
nTYPICAL CHARACTERISTICS
NF,Gain vs. frequency
(VDD=2.7V,IDD=3mA)
3
2.8
2.6
2.4
2.2
2
NF(dB)
1.8
1.6
1.4
1.2
1
0.8 0.82 0.84 0.86 0.88 0.9 0.92 0.94 0.96 0.98 1
frequency(GHz)
Gain
NF
20
18
16
14
12
10
8
6
4
2
0
S21,S11,S22,S12 vs. frequency
25
20
15
10
5
0
Gain(dB)
-5
-10
S21,S11,S22(dB)
-15
-20
-25
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
(VDD=2.7V,IDD=3mA)
S21
S22
S11
S12
frequency(GHz)
50
40
30
20
10
0
-10
-20
-30
-40
-50
S12(dB)
Pin vs. Pout
(VDD=2.7V,IDD=3mA,f=820MHz)
10
5
0
-5
-10
-15
Pout(dBm)
-20
-25
-30
-40 -35 -30 -25 -20 -15 -10 -5 0
Pin(dBm)
Gain vs. V
( f=820MHz )
17.5
P-1dB=+0.8dBm
DD
Pin vs. Pout,IM3
(VDD=2.7V,IDD=3mA,f=820+820.1MHz)
10
0
-10
-20
-30
-40
Pout,IM3(dBm)
-50
-60
-70
-40 -35 -30 -25 -20 -15 -10 -5 0
NF,IDD vs. V
1.7
Pout
IM3
IIP3=-3.5dBm
Pin(dBm)
DD
( f=820MHz )
3
17
16.5
16
Gain(dB)
15.5
15
14.5
2.5 3 3.5 4 4.5 5
VDD(V)
1.6
1.5
NF(dB)
1.4
1.3
1.2
2.5 3 3.5 4 4.5 5
NF
VDD(V)
I
DD
2.9
2.8
(mA)
DD
I
2.7
2.6
2.5
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NJG1102F1
nTYPICAL CHARACTERISTICS
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NJG1102F1
nTYPICAL CHARACTERISTICS
S21 vs. frequency(~20GHz)
(VDD=2.7V,IDD=3mA)
25
20
15
10
5
0
-5
S21(dB)
-10
-15
-20
-25
0 2 4 6 8 10 12 14 16 18 20
frequency(GHz)
S12 vs. frequency(~20GHz)
(VDD=2.7V,IDD=3mA)
50
40
30
20
10
0
-10
S12(dB)
-20
-30
-40
-50
0 2 4 6 8 10 12 14 16 18 20
frequency(GHz)
S11 vs. frequency(~20GHz)
(VDD=2.7V,IDD=3mA)
25
20
15
10
5
0
-5
S11(dB)
-10
-15
-20
-25
0 2 4 6 8 10 12 14 16 18 20
frequency(GHz)
S22 vs. frequency(~20GHz)
(VDD=2.7V,IDD=3mA)
25
20
15
10
5
0
-5
S22(dB)
-10
-15
-20
-25
0 2 4 6 8 10 12 14 16 18 20
frequency(GHz)
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NJG1102F1
nTYPICAL CHARACTERISTICS
5
3
Scattering Parameter Table
VDD=2.7V, IDD=3mA, ZO=50Ω
Freq
(GHz)
0.1 1.000 -4.866 1.342 -159.147 0.006 14.420 0.945 -3.745
0.2 1.000 -10.234 1.524 -179.085 0.006 22.117 0.935 -5.657
0.3 1.000 -14.972 1.557 169.103 0.006 29.722 0.927 -7.752
0.4 0.994 -20.871 1.572 158.960 0.007 31.125 0.926 -9.779
0.5 0.976 -24.915 1.564 150.714 0.007 35.066 0.920 -11.953
0.6 0.965 -30.526 1.548 142.447 0.007 41.693 0.915 -14.091
0.7 0.925 -35.290 1.504 134.839 0.007 44.722 0.912 -16.312
0.8 0.912 -40.103 1.499 127.579 0.008 48.888 0.905 -18.499
0.9 0.868 -45.428 1.467 120.278 0.008 53.252 0.906 -20.641
1.0 0.849 -49.349 1.443 113.971 0.008 58.494 0.898 -22.933
1.1 0.813 -54.587 1.408 107.103 0.009 65.663 0.902 -25.089
1.2 0.790 -58.371 1.379 101.107 0.009 71.121 0.896 -27.460
1.3 0.761 -63.046 1.337 95.249 0.010 79.229 0.897 -29.474
1.4 0.739 -66.963 1.322 89.341 0.011 84.816 0.898 -31.516
1.5 0.713 -71.006 1.308 83.704 0.013 90.070 0.895 -33.708
1.6 0.697 -75.141 1.258 78.278 0.015 93.627 0.894 -35.562
1.7 0.669 -78.451 1.233 72.642 0.017 96.762 0.895 -37.942
1.8 0.647 -82.248 1.198 67.296 0.019 98.510 0.889 -39.726
1.9 0.616 -84.912 1.163 61.655 0.022 99.423 0.890 -42.289
2.0 0.592 -87.965 1.132 56.671 0.024 99.437 0.885 -44.339
2.1 0.567 -90.200 1.099 51.306 0.027 99.393 0.883 -46.238
2.2 0.542 -92.166 1.068 46.616 0.030 98.567 0.889 -48.338
2.3 0.523 -93.962 1.041 41.818 0.033 97.417 0.886 -50.652
2.4 0.498 -95.631 1.011 37.218 0.036 96.016 0.889 -52.442
2.5 0.486 -96.784 0.981 32.941 0.040 94.289 0.892 -54.490
2.6 0.466 -97.556 0.958 28.504 0.043 92.819 0.890 -55.710
2.7 0.455 -97.902 0.931 24.687 0.046 90.816 0.892 -57.821
2.8 0.441 -98.495 0.901 20.371 0.050 89.017 0.895 -59.505
2.9 0.429 -98.609 0.877 16.741 0.053 86.927 0.894 -60.952
3.0 0.420 -98.095 0.849 12.899 0.057 84.724 0.899 -62.567
S11 S21 S12 S22
mag
(units)
ang
(deg)
mag
(units)
ang
(deg)
mag
(units)
ang
(deg)
mag
(units)
ang
(deg)
Note: VDD(=2.7V) is supplied through “BIAS CONNECT(PORT2)” of Network Analyzer.
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4
2
S11
Scattering Parameter Measurement Configuration
6
Ref
1
Ref.
S22
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NJG1102F1
nRECOMMEND CIRCUIT (f=810~885MHz)
541
2
Ω
3
ZO=50
15nH
IN
12nH
nRECOMMENDED PCB DESIGN
(Top View)
IN OUT
L2
L1
27nH
6
3pF
Zo=50Ω
OUT
12nH
1000pF
V
DD
L3
C1
L4
C2
V
DD
PCB : FR4, t=0.2mm
MICROSTRIP LINE WIDTH=0.4mm(Zo=50Ω)
PCB SIZE : 14.0x14.0mm
PARTS LIST (f=810~885MHz)
PART ID PARAMETER COMMENT
L1 12nH TAIYO-YUDEN HK1608 Series
L2 15nH TAIYO-YUDEN HK1608 Series
L3 27nH TAIYO-YUDEN HK1608 Series
L4 12nH TAIYO-YUDEN HK1608 Series
C1 3pF MURATA GRM39 Series
C2 1000pF MURATA GRM39 Series
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NJG1102F1
n
• To waste this product, please obey the relating law of your country.
with care to avoid these damages .
[CAUTION]
PACKAGE OUTLINE (MTP6-1)
Lead material : Copper
Lead surface finish : Solder plating
Molding material : Epoxy resin
UNIT : mm
Weight :15mg
Cautions on using this product
This product contains Gallium-Arsenide (GaAs) which is a harmful material.
• Do NOT eat or put into mouth.
• Do NOT dispose in fire or break up this product.
• Do NOT chemically make gas or powder with this product.
This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle
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The specifications on this databook are only
given for information , without any guarantee
as regards either mistakes or omissions. The
application circuits in this databook are
described only to show representative usages
of the product and not intended for the
guarantee or permission of any right including
the industrial rights.
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