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NGTB50N60L2WG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low on state voltage and minimal switching loss.
Features
• Extremely Efficient Trench with Field Stop Technology
• T
Jmax
= 175°C
• Soft Fast Reverse Recovery Diode
• Optimized for High Speed Switching
• 5 ms Short−Circuit Capability
• These are Pb−Free Devices
Typical Applications
• Motor Drive Inverters
• Industrial Switching
• Welding
ABSOLUTE MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−emitter voltage V
Collector current
Diode Forward Current
Diode Pulsed Current
T
PULSE
Pulsed collector current, T
limited by T
Short−circuit withstand time
V
GE
T
J
Gate−emitter voltage
Transient gate−emitter voltage
(T
Power Dissipation
Operating junction temperature
range
Storage temperature range T
Lead temperature for soldering, 1/8”
from case for 5 seconds
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
@ T
C = 25°C
@ TC = 100°C
@ T
C = 25°C
@ TC = 100°C
Limited by TJ Max
Jmax
= 15 V, VCE = 400 V,
≤ +150°C
= 5 ms, D < 0.10)
PULSE
@ T
C = 25°C
@ TC = 100°C
pulse
T
CES
I
I
I
FM
I
CM
t
SC
V
P
T
stg
SLD
C
F
GE
D
J
600 V
100
50
100
50
200 A
200 A
5
$20
$30
500
250
−55 to +175 °C
−55 to +175 °C
260 °C
ms
W
A
A
V
V
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50 A, 600 V
V
E
G
G
C
E
MARKING DIAGRAM
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device Package Shipping
NGTB50N60L2WG TO−247
CEsat
OFF
50N60L2
AYWWG
= 1.50 V
= 0.6 mJ
C
E
CASE 340AL
(Pb−Free)
TO−247
30 Units / Rail
© Semiconductor Components Industries, LLC, 2015
July, 2015 − R e v. 4
1 Publication Order Number:
NGTB50N60L2W/D
Page 2
THERMAL CHARACTERISTICS
Rating Symbol Value Unit
Thermal resistance junction−to−case, for IGBT
Thermal resistance junction−to−case, for Diode
Thermal resistance junction−to−ambient
NGTB50N60L2WG
R
q
JC
R
q
JC
R
q
JA
0.28 °C/W
0.62 °C/W
40 °C/W
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise specified)
J
Parameter Test Conditions Symbol Min Typ Max Unit
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
VGE = 0 V, IC = 500 mA
gate−emitter short−circuited
Collector−emitter saturation voltage VGE = 15 V, I
= 50 A, TJ = 175°C
C
Gate−emitter threshold voltage
Collector−emitter cut−off current, gate−
emitter short−circuited
Gate leakage current, collector−emitter
V
= 15 V, I
GE
VGE = VCE, I
VGE = 0 V, VCE = 600 V
V
= 0 V, VCE = 600 V, T
GE
VGE = 20 V , VCE = 0 V I
short−circuited
= 50 A
C
= 350 mA
C
J =
175°C
V
(BR)CES
V
CEsat
V
GE(th)
I
CES
GES
600 − − V
1.30
−
1.50
1.85
1.80
−
4.5 5.5 6.5 V
−
−
1.0
−
0.1
4.0
− − 100 nA
V
mA
DYNAMIC CHARACTERISTIC
Input capacitance
Output capacitance C
VCE = 20 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance C
Gate charge total
Gate to emitter charge Q
VCE = 480 V, IC = 50 A, VGE = 15 V
Gate to collector charge Q
C
ies
oes
res
Q
g
ge
gc
− 7500 −
− 300 −
− 190 −
− 310 −
− 60 −
− 150 −
pF
nC
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
t
Rise time t
Turn−off delay time t
Fall time t
Turn−on switching loss E
TJ = 25°C
V
= 400 V, IC = 50 A
CC
= 10 W
R
g
VGE = 0 V/ 15 V
Turn−off switching loss E
Total switching loss E
Turn−on delay time
t
Rise time t
Turn−off delay time t
Fall time t
Turn−on switching loss E
TJ = 150°C
V
= 400 V, IC = 50 A
CC
= 10 W
R
g
VGE = 0 V/ 15 V
Turn−off switching loss E
Total switching loss E
d(on)
r
d(off)
f
on
off
ts
d(on)
r
d(off)
f
on
off
ts
− 110 −
− 48 −
− 270 −
− 70 −
− 1.25 −
− 0.6 −
− 1.85 −
− 115 −
− 50 −
− 280 −
− 100 −
− 1.6 −
− 1.0 −
− 2.6 −
ns
mJ
ns
mJ
DIODE CHARACTERISTIC
Forward voltage
Reverse recovery time
Reverse recovery charge Q
Reverse recovery current I
Reverse recovery time
Reverse recovery charge Q
Reverse recovery current I
VGE = 0 V, IF = 50 A
V
= 0 V, IF = 50 A, TJ = 175°C
GE
TJ = 25°C
I
= 50 A, VR = 200 V
F
/dt = 200 A/ms
di
F
TJ = 175°C
I
= 50 A, VR = 400 V
F
/dt = 200 A/ms
di
F
V
t
rrm
t
rrm
F
rr
rr
1.40
−
− 67 − ns
− 0.30 −
1.70
2.40
2.50
−
V
mC
− 7.4 − A
rr
rr
− 143 − ns
− 1.40 −
mC
− 15 − A
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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NGTB50N60L2WG
TYPICAL CHARACTERISTICS
200
180
VGE = 20 V
to 13 V
160
140
120
100
80
60
40
, COLLECTOR CURRENT (A)
C
I
20
0
VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Output Characteristics Figure 2. Output Characteristics
200
VGE = 20 V
180
to 13 V
160
140
120
100
80
60
40
, COLLECTOR CURRENT (A)
C
I
20
0
VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE, GATE−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics
7 V
TJ = 25°C
11 V
10 V
9 V
8 V
7 V
7
TJ = −55°C
11 V
10 V
9 V
8 V
7
200
180
160
140
120
100
, COLLECTOR CURRENT (A)
C
I
86543210
160
140
120
100
, COLLECTOR CURRENT (A)
C
I
86543210
VGE = 20 V
to 15 V
TJ = 150°C
80
60
40
20
0
0
80
60
40
TJ = 150°C
20
0
1234 6789
TJ = 25°C
1050
13 V
11 V
10 V
9 V
8 V
7 V
7
11 12 13
8654321
2.50
2.00
1.50
1.00
0.50
, COLLECTOR−EMITTER VOLTAGE (V)
0
CE
V
−75 −50 −25
IC = 75 A
IC = 50 A
IC = 25 A
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. V
CE(sat)
vs. T
J
100,000
10,000
1000
100
C, CAPACITANCE (pF)
10
1
1751501251007550250
200
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3
TJ = 25°C
C
ies
C
oes
C
res
7060
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 6. Typical Capacitance
908050403020100
100
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NGTB50N60L2WG
TYPICAL CHARACTERISTICS
70
60
50
40
30
20
0
TJ = 150°C
TJ = 25°C
, FORWARD CURRENT (A)
F
I
10
VF, FORWARD VOLTAGE (V)
Figure 7. Diode Forward Characteristics
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
SWITCHING LOSS (mJ)
0.2
0
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Switching Loss vs. Temperature
16
VCE = 400 V
14
12
10
8
6
3.02.52.01.51.00.50
3.5 4.0
4
, GATE−EMITTER VOLTAGE (V)
2
GE
V
0
200
150100500
VCE = 400 V
V
GE
I
C
250
= 15 V
= 50 A
300 350
QG, GATE CHARGE (nC)
Figure 8. Typical Gate Charge
1000
E
on
E
off
VCE = 400 V
= 15 V
V
GE
I
= 50 A
C
100
SWITCHING TIME (ns)
Rg = 10 W
160
140120100806040200
10
t
d(off)
t
d(on)
t
f
t
r
VCE = 400 V
= 15 V
V
GE
I
= 50 A
C
Rg = 10 W
160
140120100806040200
TJ, JUNCTION TEMPERATURE (°C)
Figure 10. Switching Time vs. Temperature
3.5
VCE = 400 V
3.0
2.5
= 15 V
V
GE
T
= 150°C
J
Rg = 10 W
2.0
1.5
1.0
SWITCHING LOSS (mJ)
0.5
E
on
E
off
1000
t
d(off)
t
f
100
SWITCHING TIME (ns)
t
d(on)
t
r
VCE = 400 V
= 15 V
V
GE
T
= 150°C
J
Rg = 10 W
0
55
55 65 75 85 45352515 55 65 75 85
45352515
95
IC, COLLECTOR CURRENT (A)
Figure 11. Switching Loss vs. I
C
10
IC, COLLECTOR CURRENT (A)
Figure 12. Switching Time vs. I
95
C
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NGTB50N60L2WG
TYPICAL CHARACTERISTICS
8
VCE = 400 V
7
6
= 15 V
V
GE
T
= 150°C
J
I
= 50 A
C
5
4
3
2
SWITCHING LOSS (mJ)
1
0
Rg, GATE RESISTOR (W)
Figure 13. Switching Loss vs. Rg
3.0
VGE = 15 V
2.5
2.0
= 150°C
T
J
I
= 50 A
C
Rg = 10 W
1.5
1.0
SWITCHING LOSS (mJ)
0.5
0
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Loss vs. V
10,000
E
on
E
off
1000
100
SWITCHING TIME (ns)
55 65 75 85
453525155
10
1000
E
on
E
off
100
SWITCHING TIME (ns)
600
300250200150 550500450400350 600300250200150
550500450400350
CE
10
VCE = 400 V
= 15 V
V
GE
T
= 150°C
J
= 50 A
I
C
t
f
t
r
453525155
55 65 75 85
Rg, GATE RESISTOR (W)
Figure 14. Switching Time vs. Rg
t
d(off)
t
d(on)
t
f
VGE = 15 V
= 150°C
T
J
I
= 50 A
C
Rg = 10 W
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 16. Switching Time vs. V
t
d(off)
t
d(on)
CE
t
r
1000
100
10
1
Single Nonrepetitive
Pulse T
0.1
, COLLECTOR CURRENT (A)
C
I
0.01
C
Curves must be derated
linearly with increase
in temperature
VCE, COLLECTOR−EMITTER VOLTAGE (V)
50 ms
dc operation
100 ms
= 25°C
Figure 17. Safe Operating Area
1 ms
1000100101
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1000
100
10
, COLLECTOR CURRENT (A)
C
I
1
Figure 18. Reverse Bias Safe Operating Area
5
VGE = 15 V, TC = 125°C
1000100101
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Page 6
NGTB50N60L2WG
TYPICAL CHARACTERISTICS
160
140
120
100
80
60
, REVERSE RECOVERY TIME (ns)
rr
t
40
Figure 19. trr vs. diF/dt (VR = 400 V)
50
40
30
20
10
, REVERSE RECOVERY CURRENT (A)
0
rm
I
Figure 21. Irm vs. diF/dt (VR = 400 V)
TJ = 175°C, IF = 50 A
TJ = 25°C, IF = 50 A
700500300100
diF/dt, DIODE CURRENT SLOPE (A/m)
TJ = 175°C, IF = 50 A
500300100
diF/dt, DIODE CURRENT SLOPE (A/m)
900 1100 1300
TJ = 25°C, IF = 50 A
900 1100 1300700
2.5
2.0
1.5
1.0
0.5
, REVERSE RECOVERY CHARGE (mC)
rr
0
Q
3.5
3.0
2.5
2.0
, FORWARD VOLTAGE (V)
1.5
F
V
1.0
TJ = 175°C, IF = 50 A
TJ = 25°C, IF = 50 A
700500300100
diF/dt, DIODE CURRENT SLOPE (A/m)
900 1100 1300
Figure 20. Qrr vs. diF/dt (VR = 400 V)
IF = 75 A
IF = 50 A
IF = 25 A
50 175
250−25−50−75 100 125 150 20075
TJ, JUNCTION TEMPERATURE (°C)
Figure 22. VF vs. T
J
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Page 7
0.1
0.01
0.001
SQUARE−WAVE PEAK R(t) (°C/W)
0.0001
1
50% Duty Cycle
20%
10%
5%
2%
Single Pulse
0.000001
1
0.00001
NGTB50N60L2WG
TYPICAL CHARACTERISTICS
R
Junction
ON−PULSE WIDTH (s)
Figure 23. IGBT Transient Thermal Impedance
1
C
1
0.001
R
2
C
2
Duty Factor = t1/t
Peak TJ = PDM x Z
R
= 0.282
q
JC
R
Case
n
C
n
2
+ T
q
JC
Ri (°C/W) Ci (J/°C)
0.026955 0.003710
0.024252
0.022476
0.055395
0.112157
0.040934
C
0.013039
0.044492
0.057085
0.089161
0.772537
10.10.010.0001
SQUARE−WAVE PEAK R(t) (°C/W)
0.001
50% Duty Cycle
20%
0.1
10%
5%
2%
0.01
Single Pulse
R
Junction
Duty Factor = t1/t
Peak TJ = PDM x Z
R
1
2
C
C
1
2
2
+ T
q
C
JC
ON−PULSE WIDTH (s)
Figure 24. Diode Transient Thermal Impedance
R
= 0.622
q
JC
Ri (°C/W) Ci (J/°C)
Case
0.010584
0.011330
0.026752
0.047379
0.103276
0.061288
0.065591
0.134666
0.152791
R
n
C
n
0.0001250.007983
0.000945
0.002791
0.003738
0.006674
0.009683
0.051597
0.152460
0.234823
0.654488
10.10.010.00010.000001 0.00001 0.001
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NGTB50N60L2WG
Figure 25. Test Circuit for Switching Characteristics
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8
Page 9
NGTB50N60L2WG
Figure 26. Definition of Turn On Waveform
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NGTB50N60L2WG
Figure 27. Definition of Turn Off Waveform
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Page 11
E2/2
P
al
NOTE 4
2X
b2
D
L
NOTE 4
E
123
e
E2
NOTE 3
L1
NOTE 5
b4
3X
b
A
Q
c
0.25MBA
NGTB50N60L2WG
PACKAGE DIMENSIONS
TO−247
CASE 340AL
ISSUE A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
SEATING
B
PLANE
A
0.635MBA
P
NOTE 6
S
4
A1
NOTE 7
M
3. SLOT REQUIRED, NOTCH MAY BE ROUNDED.
M
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH.
MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE
DIMENSIONS ARE MEASURED AT THE OUTERMOST
EXTREME OF THE PLASTIC BODY.
5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY
L1.
6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE
TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91.
7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED
BY L1.
MILLIMETERS
DIM MIN MAX
A 4.70 5.30
A1 2.20 2.60
b 1.00 1.40
b2 1.65 2.35
b4 2.60 3.40
c 0.40 0.80
D 20.30 21.40
E 15.50 16.25
E2 4.32 5.49
e 5.45 BSC
L 19.80 20.80
L1 3.50 4.50
P 3.55 3.65
Q 5.40 6.20
S 6.15 BSC
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