Datasheet NGD8201ANT4G Specification

Ignition IGBT

Pb

Surface Mount > 400V > NGD8201AN

NGD8201AN - 20 A, 400 V, N-Channel Ignition IGBT, DPAK

Description

This Logic Level Insulated Gate Bipolar Transistor (IGBT)
features monolithic circuitry integrating ESD and Over−
Voltage clamped protection for use in inductive coil
drivers applications. Primary uses include Ignition, Direct
Fuel Injection, or wherever high voltage and high current
switching is required.

Features

• Ideal for Coil−on−Plug and Driver−on−Coil Applications

• DPAK Package Offers Smaller Footprint for Increased

Board Space

20 Amps, 400 Volts

(on) ≤ 1.3 V @

V

CE

= 10 A, VGE ≥ 4.5 V

I

C

Maximum Ratings (T

Rating Symbol Value Unit

Collector−Emitter Voltage V

Gate−Gate Voltage V

Gate−Emitter Voltage V

Collector Current−Continuous

@ TC = 25°C − Pulsed

= 25°C unless otherwise noted)

J

GE

C

440 V

440 V

± 15 V

20

50

CES

CES

I

ADC

A

AC

• Gate−Emitter ESD Protection

• Temperature Compensated Gate−Collector Voltage Clamp

Limits Stress Applied to Load

• Integrated ESD Diode Protection

• New Design Increases Unclamped Inductive Switching

(UIS) Energy Per Area

• Low Threshold Voltage for Interfacing Power Loads to

Logic or Microprocessor Devices

• Low Saturation Voltage

• High Pulsed Current Capability

• Emitter Ballasting for Short−Circuit Capability

• These are Pb−Free Devices

Functional Diagram

Continous Gate Current I

Transient Gate Current
(t ≤ 2 ms, f ≤ 100 Hz)

ESD (Charged–Device Model) ESD 2.0 kV

ESD (Human Body Model)
R = 1500 Ω, C = 100 pF

ESD (Machine Model)
R = 0 Ω, C = 200 pF

Total Power Dissipation @ TC = 25°C

Derate above 25°C

Operating and Storage
Temperature Range

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are
stress ratings only. Functional operation above the Recommended Operating Conditions
is not implied. Extended exposure to stresses above the Recommended Operating
Conditions may affect device reliability.

G

I

G

ESD 2.0 kV

ESD 500 V

P

D

, T

T

J

stg

1. 0 mA

20 mA

125

0.83

−55 to
+175

W

W/°C

°C

Additional Information

Datasheet

Resources

Specifications are subject to change without notice.

Samples

© 2018 Littelfuse, Inc.

Revised: 02/15/18

Ignition IGBT

Surface Mount > 400V > NGD8201AN

Unclamped Collector−To−Emitter Avalanche Characteristics

Single Pulse Collector−to−Emitter Avalanche Energy

V

= 50 V, VGE = 5.0 V, Pk IL = 16.7 A, RG = 1000 Ω , L = 1.8 mH, Starting TJ = 25°C

CC

Symbol Value Unit

250

= 50 V, VGE = 5.0 V, Pk IL = 14.9 A, RG = 1000 Ω , L = 3.0 mH, Starting TJ = 150°C 200

CC

= 50 V, VGE = 5.0 V, Pk IL = 14.1 A, RG = 1000 Ω , L = 1.8 mH, Starting TJ = 175°C

V

CC

E

AS

Reverse Avalanche Energy

V

= 100 V, VGE = 20 V, Pk IL = 25.8 A, L = 6.0 mH, Starting TJ = 25°C E

CC

AS (R)

Thermal Characteristics

Symbol Value Unit

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient DPAK (Note 1)

Maximum Lead Temperature for Soldering Purposes, 1/8”
from case for 5 seconds

1. When surface mounted to an FR4 board using the minimum recommended pad size.

R

JC

θ

R

θ

JA

T

L

1. 3

95

275 °C

mJV

180

2000 mJ

°C/W

Specifications are subject to change without notice.

© 2018 Littelfuse, Inc.

Revised: 02/15/18

Ignition IGBT

Surface Mount > 400V > NGD8201AN

Electrical Characteristics - OFF

Characteristic Symbol

Collector−Emitter

Clamp Voltage

Zero Gate Voltage

Collector Current

Reverse Collector−Emitter

Clamp Voltage

B

B

VCES

I

CES

VCES(R)

Test

Conditions

IC = 2.0 mA

IC = 10 mA

V

= 15 V

CE

V

= 0 V

GE

V

= 200 V

CE

V

= 0 V

GE

IC = -75 mA

Temperature Min Ty p Max Unit

TJ = −40°C to 175°C

TJ = −40°C to 175°C

370 395 420

390 415 440

TJ = 25°C − 0.1 1. 0

T

= 25°C 0.5 1. 5 10

J

= 175°C 1. 0 25 100 *

T

J

= −40°C 0.4 0.8 5.0

T

J

T

= 25°C 30 35 39

J

= 175°C 35 39 45*

J

= −40°C 30 33 37

T

J

V

µA

VT

= 25°C 0.05 0.2 1. 0

T

J

Reverse Collector−Emitter

Leakage Current

Gate−Emitter Clamp Voltage

Gate−Emitter Leakage Current

Gate Resistor

Gate−Emitter Resistor

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical
Characteristics if operated under different conditions.

*Maximum Value of Characteristic across Temperature Range.

I

CES(R)

BV

I

R

R

GES

GE

GES

G

VCE = −24 V

IG = ± 5.0 mA

VGE = ± 5.0 V

_

−

= 175°C 1. 0 8.5 25

J

= −40°C 0.005 0.025 0.2

T

J

TJ = −40°C to 175°C

TJ = −40°C to 175°C

TJ = −40°C to 175°C

TJ = −40°C to 175°C

12 12.5 14 V

200 300 350* µA

– 70 – Ω

14.25 16 25 kΩ

mAT

Specifications are subject to change without notice.

© 2018 Littelfuse, Inc.

Revised: 02/15/18

Ignition IGBT

Surface Mount > 400V > NGD8201AN

Electrical Characteristics - ON (Note 3)

Characteristic Symbol Test Conditions Temperature Min Ty p Max Unit

TJ = 25°C 1. 5 1. 8 2.1

Gate Threshold Voltage

V

GE (th)

IC = 1.0 mA,

VGE = V

CE

TJ = 175°C 0.7 1.0 1. 3

T

= −40°C 1.7 2.0 2.3*

J

V

Threshold Temperature

Coefficient (Negative)

Collector−to−Emitter

On−Voltage

− − − 4.0 4.6 5.2

= 25°C 0.85 1.03 1.35

T

J

IC = 6.5 A,

TJ = 175°C 0.7 0.9 1.15

VGE = 3.7 V

T

= −40°C 0.09 1. 11 1.4

J

= 25°C 0.9 1. 11 1.45

T

J

=9.0 A,

I

V

CE (on)

C

VGE = 3.9 V

= 7.5 A,

I

C

VGE = 4.5 V

= 10 A,

I

C

VGE = 4.5 V

= 15 A,

I

C

VGE = 4.5 V

T

= 175°C 0.8 1. 01 1.25

J

T

= −40°C 1.0 1. 18 1. 5

J

= 25°C 0.85 1. 1 5 1. 4

T

J

T

= 175°C 0.7 0.95 1. 2

J

T

= −40°C 1.0 1. 3 1.6*

J

= 25°C 1. 0 1. 3 1. 6

T

J

T

= 175°C 0.8 1.05 1. 4

J

T

= −40°C 1.1 1. 4 1.7*

J

= 25°C 1.1 5 1.45 1. 7

T

J

T

= 175°C 1. 0 1. 3 1.55

J

T

= −40°C 1.25 1.55 1.8*

J

mV/°C

V

Forward Transconductance

*Maximum Value of Characteristic across Temperature Range.

3. Pulse Test: Pulse Width ≤ 300 µS, Duty Cycle ≤ 2%.

gfs

= 20 A,

I

C

VGE = 4.5 V

IC = 6.0 A,

VCE = 5.0 V

= 25°C 1. 1 1. 4 1. 9

T

J

T

= 175°C 1. 2 1. 5 1. 8

J

T

= −40°C 1.3 1.42 2.0

J

TJ = 25°C 10 18 25 Mhos

Specifications are subject to change without notice.

© 2018 Littelfuse, Inc.

Revised: 02/15/18

Ignition IGBT

Surface Mount > 400V > NGD8201AN

Dynamic Characteristics

Characteristic Symbol Test Conditions Temperature Min Ty p Max Unit

Input Capacitance C

Output Capacitance C

Transfer Capacitance C

Switching Characteristics

Characteristic Symbol

Turn−Off Delay Time (Resistive)

Fall Time (Resistive)

Turn−Off Delay Time (Inductive)

Fall Time (Inductive)

ISS

OSS

RSS

t

d (off)

t

d (off)

t

t

f

f

f = 10 kHz

V

= 25 V

CC

Conditions

VCC = 300 V

I

R

G

R

V

VCC = 300 V

I

R

G

L = 300 µH

V

Test

= 9.0 A

C

= 1.0 kΩ

= 33 Ω

L

= 5.0 V

GE

= 9.0 A

C

= 1.0 kΩ

= 5.0 V

GE

110 0 1300 150 0

TJ = -40ºC

to

70 80 90

175 °C

18 20 22

Temperature Min Typ Max Unit

TJ = 25°C 6.0 8.0 10

TJ = 175°C 6.0 8.0 10

TJ = 25°C 4.0 6.0 8.0

= 175°C 8.0 10.5 14

T

J

TJ = 25°C 3.0 5.0 7. 0

T

= 175°C 5.0 7. 0 9.0

J

TJ = 25°C 1. 5 3.0 4.5

= 175°C 5.0 7. 0 10

T

J

pF

µSec

Turn−On Delay Time

Rise Time

t

d (on)

VCC = 14 V

TJ = 25°C 1. 0 1. 5 2.0

= 9.0 A

I

C

= 1.0 kΩ

R

G

= 1.5 Ω

R

L

t

r

V

GE

= 5.0 V

= 175°C 1. 0 1.5 2.0

T

J

TJ = 25°C 4.0 6.0 8.0

= 175°C 3.0 5.0 7. 0

T

J

Specifications are subject to change without notice.

© 2018 Littelfuse, Inc.

Revised: 02/15/18

Ignition IGBT

Surface Mount > 400V > NGD8201AN

Typical Electrical Characteristics

Figure 1. Self Clamped Inductive Switching

Figure 3. Collector−to−Emitter Voltage vs. Junction Temperature

Figure 2. Open Secondary Avalanche Current vs. Temperature

Figure 4. Collector Current vs. Collector−to−Emitter Voltage

Figure 5. Collector Current vs. Collector−to−Emitter Voltage Figure 6. Collector Current vs. Collector−to−Emitter Voltage

Specifications are subject to change without notice.

© 2018 Littelfuse, Inc.

Revised: 02/15/18

Ignition IGBT

Surface Mount > 400V > NGD8201AN

Figure 7. Transfer Characteristics

Figure 9. Gate Threshold Voltage vs. Temperature

Figure 8. Collector−to−Emitter Leakage Current vs. Temp

Figure 10. Capacitance vs. Collector−to−Emitter Voltage

Figure 11. Resistive Switching Fall Time vs. Temperature Figure 12. Inductive Switching Fall Time vs. Temperature

Specifications are subject to change without notice.

© 2018 Littelfuse, Inc.

Revised: 02/15/18

Ignition IGBT

Surface Mount > 400V > NGD8201AN

Figure 13. Minimum Pad Transient Thermal Resistance (Non−normalized Junction−to−Ambient)

Figure 14. Best Case Transient Thermal Resistance (Non−normalized Junction−to−Case Mounted on Cold Plate)

Specifications are subject to change without notice.

© 2018 Littelfuse, Inc.

Revised: 02/15/18

Ignition IGBT

L

F

Surface Mount > 400V > NGD8201AN

Dimensions

E

b3

b2

e

4

12 3

TOP VIEW

L3

L4

A

B

D

NOTE 7

b

0.005 (0.13) C

DETAIL A

SIDE VIEW

C

A

c2

H

c

M

GAUGE

L2

PLANE

BOTTOM VIEW

L

L1

DETAIL A

ROTATED 90 CW

Z

A1

Inches Millimeters

Dim

Min Max Min Max

A 0.086 0.094 2.18 2.38

A1 0.000 0.005 0.00 0.13

b 0.025 0.035 0.63 0.89

b2

0.028 0.045 0.72 1. 1 4

b3 0.180 0.215 4.57 5.46

c 0.018 0.024 0.46 0.61

c2 0.018 0.024 0.46 0.61

D 0.235 0.245 5.97 6.22

E 0.250 0.265 6.35 6.73

e 0.090 BSC 2.29 BSC

H 0.370 0.410 9.40 10.41

L 0.055 0.070 1.40 1.78

L1 0.114 REF 2.90 REF

L2 0.020 BSC 0.51 BSC

L3 0.035 0.050 0.89 1.27

L4 −−− 0.040 −−− 1. 01

Z 0.155 −−− 3.93 −−−

BOTTOM VIEW

ALTERNATE

CONSTRUCTION

H

SEATING

C

PLANE

Soldering Footrpint

Z

5.80

0.228

Part Marking System

ORDERING INFORMATION

Device Package Shipping†

NGD8201ANT4G

6.20

0.244

2.58

0.102

1

Gate

2

Collector

AYWW

NGD

8201AN

8201AG

3

Emitter

NGD8201A

A=

= Device Code

Assembly Location

Y= Year
WW = Work Week
G

DPAK

(Pb−Free)

3.00

0.118

0.063

1.60

SCALE 3:1

6.17

0.243

4

Collector

e

Tape & Reel

mm

inches

2,500 /

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: INCH.

3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS,
OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT
EXCEED 0.006 INCHES PER SIDE.

5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST

EXTREMES OF THE PLASTIC BODY.

6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H.

Disclaimer Notice - Information furnished is believed to be accurate and
reliable. However, users should independently evaluate the suitability of and
test each product selected for their own applications. Littelfuse products are
not designed for, and may not be used in, all applications. Read complete
Disclaimer Notice at: www.littelfuse.com/disclaimer-electronics.

Specifications are subject to change without notice.

© 2018 Littelfuse, Inc.

Revised: 02/15/18