Page 1
Product Description
Stanford Microdevices NGA-589 is a high performance InGaP/
GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A
Darlington configuration designed with InGaP process
technology provides broadband performance up to 5.5 GHz with
excellent thermal perfomance. The heterojunction increases
breakdown voltage and minimizes leakage current between
junctions. Cancellation of emitter junction non-linearities results
in higher suppression of intermodulation products. At 850 Mhz
and 80mA , the NGA-589 typically provides +39 dBm output
IP3, 20 dB of gain, and +19 dBm of 1dB compressed power
using a single positive voltage supply. Only 2 DC-blocking
capacitors, a bias resistor and an optional RF choke are required
for operation.
22
20
18
16
Gain (dB)
14
12
Gain & Return Loss vs. Freq. @TL=+25°C
GAIN
IRL
ORL
0123456
Frequency (GHz)
0
-6
-12
-18
-24
-30
-36
NGA-589
DC-5.5 GHz, Cascadable
InGaP/GaAs HBT MMIC Amplifier
Product Features
High Gain : 19.2 dB at 1950 MHz
Cascadable 50 Ohm
Patented InGaP Technology
Operates From Single Supply
Low Thermal Resistance Package
Applications
Return Loss (dB)
Cellular, PCS, CDPD
Wireless Data, SONET
Satellite
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Test Conditions:
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are
subject to change without notice. No patent right s or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not
authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
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VS = 8 V ID = 80 mA Typ. OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm
R
= 39 Ohms TL = 25ºC ZS = ZL = 50 Ohms
BIAS
Phone: (800) SMI-MMIC http://www.stanfordmicro.com726 Palomar Ave., Sunnyvale, CA 94085
1
EDS-100376 Rev A
0.22
Page 2
Preliminary
NGA-589 DC-5.5 GHz Cascadable MMIC Amplifier
Typical RF Performance at Key Operating Frequencies
Frequency (MHz)
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Test Conditions:
VS = 8 V ID = 80 mA Typ. OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm
R
= 39 Ohms TL = 25ºC ZS = ZL = 50 Ohms
BIAS
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noisserpmoCBd1tarewoPtuptuOmBd3.810.910.918.816.714.51
Noise Figure vs. Frequency
7
6
5
4
Noise Figure (dB)
3
2
00.511.522.533.5
VD= 4.9 V, ID= 80 mA
TL = 25ºC
Frequency (GHz)
OIP3 vs. Frequency
45
40
35
30
(dBm)
3
OIP
25
20
15
00.511.522.533.5
VD= 4.9 V, ID= 80 mA
Frequency (GHz)
T
L
+25°C
-40°C
+85°C
Absolute Maximum Ratings
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Bias Conditions should also satisfy the following
expression: IDVD (max) < (TJ - TL)/R
P
vs. Frequency
1dB
22
VD= 4.9 V, ID= 80 mA
20
18
16
(dBm)
1dB
14
P
th
+25°C
-40°C
T
L
+85°C
12
10
00.511.522.533.5
Frequency (GHz)
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Phone: (800) SMI-MMIC http://www.stanfordmicro.com726 Palomar Ave., Sunnyvale, CA 94085
2
EDS-100376 Rev A
Page 3
Preliminary
NGA-589 DC-5.5 GHz Cascadable MMIC Amplifier
S21 vs. Frequency
24
22
20
(dB)
21
18
S
16
14
0123456
VD= 4.9 V, ID= 80 mA
Frequency (GHz)
+25°C
T
-40 °C
L
+85°C
S12 vs. Frequency
-17
-19
-21
(dB)
12
-23
S
-25
-27
0123456
VD= 4.9 V, ID= 80 mA
Frequency (GHz)
+25°C
T
-40°C
L
+85°C
S11 vs. Frequency
-5
-10
-15
(dB)
11
S
-20
-25
-30
0123456
VD= 4.9 V, ID= 80 mA
Frequency (GHz)
+25°C
-40 °C
T
L
+85°C
S22 vs. Frequency
-5
-10
-15
(dB)
22
-20
S
-25
-30
0123456
VD= 4.9 V, ID= 80 mA
+25°C
T
-40 °C
L
+85°C
Frequency (GHz)
VD vs. ID over Temperature for fixed
95
90
85
80
(mA)
D
I
75
70
65
VS= 8 V, R
+85°C
= 39 Ohms *
BIAS
+25°C
4.6 4.8 4.9 5.1 5.2
VD (V o lts)
* Note: In the applications circuit on page 4, R
VD vs. Temperature for Constant ID = 80 mA
5.50
5.35
5.20
-40°C
(Volts)
D
V
5.05
4.90
4.75
4.60
-40 -15 10 35 60 85
Temperature (°C)
compensates for voltage and current variation over temperature.
BIAS
Phone: (800) SMI-MMIC http://www.stanfordmicro.com726 Palomar Ave., Sunnyvale, CA 94085
3
EDS-100376 Rev A
Page 4
NGA-589 Basic Application Circuit
Preliminary
NGA-589 DC-5.5 GHz Cascadable MMIC Amplifier
V
S
RF in
R
BIAS
1000
1 uF
pF
C
D
L
C
Application Circuit Element Values
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C
B
C
D
L
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1
C
B
C
B
NGA-589
2
N5
3
C
V
S
R
BIAS
L
C
B
1 uF
1000 pF
C
D
C
B
RF out
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33932619
Mounting Instructions
1. Solder the copper pad on the backside of the
device package to the ground plane.
2. Use a large ground pad area with many plated
through-holes as shown.
3. We recommend 1 or 2 ounce copper. Measurement
for this data sheet were made on a 31 mil thick FR-4
board with 1 ounce copper on both sides.
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Part Identification Marking
The part will be marked with an N5 designator on the
top surface of the package.
4
N5
2
1
123
For package dimensions, refer to outline drawing at
www.stanfordmicro.com
Caution: ESD sensitive
Appropriate precautions in handling, packaging
and testing devices must be observed.
3
Phone: (800) SMI-MMIC http://www.stanfordmicro.com726 Palomar Ave., Sunnyvale, CA 94085
4
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Part Number Ordering Information
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EDS-100376 Rev A
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