Page 1
Product Description
Stanford Microdevices NGA-586 is a high performance InGaP/
GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A
Darlington configuration designed with InGaP process
technology provides broadband performance up to 5.5 GHz with
excellent thermal perfomance. The heterojunction increases
breakdown voltage and minimizes leakage current between
junctions. Cancellation of emitter junction non-linearities results
in higher suppression of intermodulation products. At 850 Mhz
and 80mA , the NGA-586 typically provides +39.6 dBm output
IP3, 19.8 dB of gain, and +18.9 dBm of 1dB compressed
power using a single positive voltage supply. Only 2 DCblocking capacitors, a bias resistor and an optional RF choke
are required for operation.
24
20
16
Gain (dB)
12
8
Gain & Return Loss vs. Freq. @TL=+25°C
GAIN
IRL
ORL
0123456
Frequency (GHz)
0
-10
-20
-30
-40
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NGA-586
DC-5.5 GHz, Cascadable
InGaP/GaAs HBT MMIC Amplifier
Product Features
High Gain : 18.6 dB at 1950 MHz
Cascadable 50 Ohm
Patented InGaP Technology
Operates From Single Supply
Low Thermal Resistance Package
Applications
Return Loss (dB)
Cellular, PCS, CDPD
Wireless Data, SONET
Satellite
Bd
Bd
Bd
mBd
mBd
mBd
mBd
)Bd01-<(ssoLnruteRybdenimreteDzHM0055
zHM058
zHM0591
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zHM058
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zHM058
zHM0591
8.718.91
8.12
6.81
9.71
9.81
5.81
6.93
0.43
LROssoLnruteRtuptuOBdzHM05915.91
FNerugiFesioNBdzHM05915.3
V
D
R
hT
Test Conditions:
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are
subject to change without notice. No patent right s or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not
authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
egatloVeciveDV5.49.44.5
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VS = 8v ID = 80mA Typ. IP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm
R
= 39 Ohms TL = 25ºC ZS = ZL = 50 Ohms
BIAS
Phone: (800) SMI-MMIC http://www.stanfordmicro.com726 Palomar Ave., Sunnyvale, CA 94085
1
EDS-101105 Rev. D
Page 2
Preliminary
NGA-586 DC-5.5 GHz Cascadable MMIC Amplifier
Typical RF Performance at Key Operating Frequencies
Frequency (MHz)
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LROssoLnruteRtuptuOBd9.538.337.825.916.9152
S
12
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FNerugiFesioNBd7.35.34.35.35.36.3
Test Conditions:
VS = 8 V ID = 80 mA Typ. OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm
R
= 39 Ohms TL = 25ºC ZS = ZL = 50 Ohms
BIAS
tnioPtpecretnIredrOdrihTtuptuOmBd7.736.836.930.430.234.72
noisserpmoCBd1tarewoPtuptuOmBd1.020.919.815.819.717.31
Noise Figure vs. Frequency
VD= 4.9 V, ID= 80 mA
5.0
4.5
4.0
3.5
3.0
Noise Figure (dB)
2.5
2.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Frequen cy ( GHz )
TL=+25ºC
OIP3 vs. Frequency
VD= 4.9 V, ID= 80 mA
45
40
35
30
(dBm)
3
25
OIP
20
15
0 0.5 1 1.5 2 2.5 3 3.5
Frequency (GHz)
T
Absolute Maximum Ratings
retemaraP timiLetulosbA
.xaM
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Bias Conditions should also satisfy the following
expression: IDVD (max) < (TJ - TL)/R
22
+25°C
-40°C
L
+85°C
(dBm)
1dB
P
20
18
16
14
12
10
0 0.5 1 1.5 2 2.5 3 3.5
tnerruCeciveD
I(D)
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D
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pmeTegarotS
.
P
vs. Frequency
1dB
VD= 4.9 v, ID= 80 mA
Frequency (GHz)
102Am
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+25°C
T
-40°C
L
+85°C
Phone: (800) SMI-MMIC http://www.stanfordmicro.com726 Palomar Ave., Sunnyvale, CA 94085
2
EDS-101105 Rev. D
Page 3
Preliminary
NGA-586 DC-5.5 GHz Cascadable MMIC Amplifier
S21 vs. Frequency
25
20
(dB)
15
21
S
10
5
0123456
VD= 4.9 v, ID= 80 mA
Frequency (GHz)
+25°C
-40°C
T
L
+85°C
S12 vs. Frequency
-15
-17
-19
(dB)
12
S
-21
-23
-25
0123456
VD= 4.9 v, ID= 80 mA
T
L
Frequency (GHz)
+25°C
-40°C
+85°C
S11 vs. Frequency
0
-5
-10
(dB)
-15
11
S
-20
-25
-30
0123456
VD= 4.9 v, ID= 80 mA
Frequency (GHz)
T
L
S22 vs. Frequency
-5
-10
-15
(dB)
-20
22
S
-25
-30
-35
0123456
VD= 4.9 v, ID= 80 mA
T
L
Frequency (GHz)
+25°C
-40°C
+85°C
+25°C
-40°C
+85°C
VD vs. ID over Temperature for fixed
95
VS= 8 v, R
= 39 ohms *
BIAS
90
+85°C
85
80
(mA)
D
I
+25°C
75
70
65
4.6 4.7 4.8 4.9 5.0 5.1
V
(Volts)
D
* Note: In the applications circuit on page 4, R
VD vs. Temperature for Constant ID = 80 mA
5.3
5.1
4.9
(Volts)
D
-40°C
compensates for voltage and current variation over temperature.
BIAS
Phone: (800) SMI-MMIC http://www.stanfordmicro.com726 Palomar Ave., Sunnyvale, CA 94085
4.7
V
4.5
4.3
-40 -15 10 35 60 85
Temperature(°C)
3
EDS-101105 Rev. D
Page 4
NGA-586 Basic Application Circuit
Preliminary
NGA-586 DC-5.5 GHz Cascadable MMIC Amplifier
V
S
RF in
R
BIAS
1 uF
1000
pF
C
D
L
C
Application Circuit Element Values
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rotangiseD
005 058 0591 0042 0053
C
B
C
D
L
C
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4
1
C
B
C
B
NGA-586
2
3
C
V
S
R
BIAS
L
C
N5
B
1 uF
1000 pF
C
D
C
B
RF out
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Am08=
D
V(egatloVylppuS
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S
R
SAIB
R:etoN
SAIB
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Mounting Instructions
1. Use a large ground pad area under device pins 2
and 4 with many plated through-holes as shown.
2. We recommend 1 or 2 ounce copper. Measurements
for this data sheet were made on a 31 mil thick FR-4
board with 1 ounce copper on both sides.
Part Identification Marking
The part will be marked with an N5 designator on the
top surface of the package.
3
4
N5
2
1
For package dimensions, refer to outline drawing at
www.stanfordmicro.com
Caution: ESD sensitive
Appropriate precautions in handling, packaging
and testing devices must be observed.
Phone: (800) SMI-MMIC http://www.stanfordmicro.com726 Palomar Ave., Sunnyvale, CA 94085
4
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Part Number Ordering Information
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EDS-101105 Rev. D
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