Page 1
Product Description
Stanford Microdevices NGA-489 is a high performance InGaP/
GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A
Darlington configuration designed with InGaP process
technology provides broadband performance up to 10 GHz with
excellent thermal perfomance. The heterojunction increases
breakdown voltage and minimizes leakage current between
junctions. Cancellation of emitter junction non-linearities results
in higher suppression of intermodulation products. At 850 Mhz
and 65mA , the NGA-489 typically provides +38.0 dBm output
IP3, 14.8 dB of gain, and +17.2 dBm of 1dB compressed power
using a single positive voltage supply. Only 2 DC-blocking
capacitors, a bias resistor and an optional RF choke are required
for operation.
Gain & Return Loss vs. Freq. @TL=+25°C
15
13
11
9
Gain (dB)
7
5
012345678910
(from de-imbedded S-parameters)
GAIN
IRL
ORL
Frequency (GHz)
0
-6
-12
-18
-24
-30
-36
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GniaGlangiSllamS
P
Bd1
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LRIssoLnruteRtupnIBdzHM05917.91
NGA-489
0.5-10 GHz, Cascadable
InGaP/GaAs HBT MMIC Amplifier
Product Features
High Gain : 14.5 dB at 1950 MHz
Cascadable 50 Ohm
Patented InGaP Technology
Operates From Single Supply
Low Thermal Resistance Package
Applications
Return Loss (dB)
Cellular, PCS, CDPD
Wireless Data, SONET
Satellite
Bd
Bd
Bd
mBd
mBd
mBd
mBd
)Bd01-<(ssoLnruteRybdenimreteDzHM00001
zHM058
zHM0591
zHM0042
zHM058
zHM0591
zHM058
zHM0591
5.318.41
0.61
5.41
2.41
2.71
0.71
0.83
0.73
LROssoLnruteRtuptuOBdzHM05910.72
FNerugiFesioNBdzHM05912.4
V
D
R
hT
Test Conditions:
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are
subject to change without notice. No patent right s or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not
authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
egatloVeciveDV6.30.44.4
ecnatsiseRlamrehTW/C°541
VS = 8 V ID = 65 mA Typ. OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm
R
= 62 Ohms TL = 25ºC ZS = ZL = 50 Ohms
BIAS
Phone: (800) SMI-MMIC http://www.stanfordmicro.com726 Palomar Ave., Sunnyvale, CA 94085
1
EDS-100375 Rev C
Page 2
Preliminary
NGA-489 0.5-10 GHz Cascadable MMIC Amplifier
Typical RF Performance at Key Operating Frequencies
Frequency (MHz)
lobmyS retemaraP tinU 005 058 0591 0042 0053
GniaGlangiSllamSBd6.418.415.414.412.41
PIO
3
P
Bd1
LRIssoLnruteRtupnIBd0.620.427.910.810.71
LROssoLnruteRtuptuOBd0.330.230.720.620.72
S
21
noitalosIesreveRBd3.813.816.817.810.91
FNerugiFesioNBd3.43.42.42.44.4
Test Conditions:
VS = 8 V ID = 65 mA Typ. OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm
R
= 62 Ohms TL = 25ºC ZS = ZL = 50 Ohms
BIAS
tnioPtpecretnIredrOdrihTtuptuOmBd6.730.830.739.437.13
noisserpmoCBd1tarewoPtuptuOmBd2.712.710.717.618.51
Noise Figure vs. Frequency
7
6
5
4
Noise Figure (dB)
3
2
0123456
VD= 4.0 V, ID= 65 mA
TL=+25ºC
Frequency (GHz)
OIP3 vs. Frequency
VD= 4.0 V, ID= 65 mA
45
40
35
(dBm)
3
30
OIP
25
20
0123456
Frequency (G H z )
+25°C
-40°C
T
L
+85°C
Absolute Maximum Ratings
retemaraP timiLetulosbA
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.xaM
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.xaM
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D
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pmeTegarotS
.
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mBd51+
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.egamadtnenamrepesuac
Bias Conditions should also satisfy the following
expression: IDVD (max) < (TJ - TL)/R
P
vs. Frequency
1dB
VD= 4.0 V, ID= 65 mA
20
18
th
+25°C
T
-40°C
L
+85°C
16
(dBm)
14
1dB
P
12
10
0123456
Frequency (GHz)
yamstimilesehtfoenoynadnoyebecivedsihtfonoitarepO
Phone: (800) SMI-MMIC http://www.stanfordmicro.com726 Palomar Ave., Sunnyvale, CA 94085
2
EDS-100375 Rev C
Page 3
Preliminary
NGA-489 0.5-10 GHz Cascadable MMIC Amplifier
S21 vs. Frequency
20
VD= 4.0 V, ID= 65 mA
18
+25°C
T
-40°C
L
+85°C
16
(dB)
21
14
S
12
10
0123456
Frequency (GHz)
S12 vs. Frequency
-15
-17
-19
(dB)
12
-21
S
-23
-25
0123456
VD= 4.0 V, ID= 65 mA
Frequency (GHz)
+25°C
T
-40°C
L
+85°C
S11 vs. Frequency
-10
VD= 4.0 V, ID= 65 mA
-15
-20
(dB)
11
S
-25
+25°C
T
-40°C
L
+85°C
-30
-35
0123456
Frequency (GHz)
S22 vs. Frequency
-15
-20
-25
(dB)
22
-30
S
-35
-40
0123456
VD= 4.0 V, ID= 65 mA
T
L
Frequency (GHz)
+25°C
-40°C
+85°C
VD vs. ID over Temperature for fixed
80
75
70
65
(mA)
D
I
60
55
50
+85°C
3.83.944.14.2
* Note: In the applications circuit on page 4, R
VS= 8 V, R
= 62 ohms *
BIAS
VD (Volts)
+25°C
-40°C
compensates for voltage and current variation over temperature.
BIAS
Phone: (800) SMI-MMIC http://www.stanfordmicro.com726 Palomar Ave., Sunnyvale, CA 94085
VD vs. Temperature for Constant ID = 65 mA
4.50
4.35
4.20
4.05
(Volts)
D
V
3.90
3.75
3.60
-40 -15 10 35 60 85
3
Temperature (°C)
EDS-100375 Rev C
Page 4
NGA-489 Basic Application Circuit
Preliminary
NGA-489 0.5-10 GHz Cascadable MMIC Amplifier
V
S
RF in
R
BIAS
1 uF
1000
pF
C
D
L
C
Application Circuit Element Values
ecnerefeR
rotangiseD
005 058 0591 0042 0053
C
B
C
D
L
C
Fp022Fp001Fp86Fp65Fp93
Fp001Fp86Fp22Fp22Fp51
Hn86Hn33Hn22Hn81Hn51
)zhM(ycneuqerF
4
1
C
B
C
B
NGA-489
2
N4
3
C
V
S
R
BIAS
L
C
B
1 uF
1000 pF
C
D
C
B
RF out
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Am56=
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S
R
SAIB
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SAIB
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Mounting Instructions
1. Solder the copper pad on the backside of the
device package to the ground plane.
2. Use a large ground pad area with many plated
through-holes as shown.
3. We recommend 1 or 2 ounce copper. Measurement
for this data sheet were made on a 31 mil thick FR-4
board with 1 ounce copper on both sides.
Part Identification Marking
The part will be marked with an N4 designator on the
top surface of the package.
4
N4
2
1
123
For package dimensions, refer to outline drawing at
www.stanfordmicro.com
Caution: ESD sensitive
Appropriate precautions in handling, packaging
and testing devices must be observed.
3
Phone: (800) SMI-MMIC http://www.stanfordmicro.com726 Palomar Ave., Sunnyvale, CA 94085
4
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Part Number Ordering Information
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EDS-100375 Rev C
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