Page 1
Product Description
Stanford Microdevices’ NGA-386 is a high performance
Gallium Arsenide Heterojunction Bipolar Transistor MMIC
Amplifier. Designed with InGaP process technology for
improved reliability, a Darlington configuration is utilized for
broadband performance up to 5 Ghz. The heterojunction
increases breakdown voltage and minimizes leakage current
between junctions. Cancellation of emitter junction
non-linearities results in higher suppression of intermodulation
products.
Preliminary
Preliminary
NGA-386
DC-5000 MHz, Cascadable GaAs
HBT MMIC Amplifier
Small Signal Gain vs. Frequency
25
20
• High Gain: 18.9dB at 1950Mhz
• Cascadable 50 ohm: 1.2:1 VSWR
• Patented GaAs HBT Technology
• Operates from Single Supply
Product Features
15
dB
10
5
• Low Thermal Resistance Package
• Unconditionally Stable
Applications
0
01234567
Frequency GHz
lobmyS
Z
0
P
Bd1
PI
3
S
12
htdiwdnaBhtdiwdnaBBd3 zHM0002
S
11
S
22
S
21
FNerugiFesioNzHM0002=fBd7.2
V
D
R
l-j,)dael-noitcnuj(ecnatsiseRlamrehT W/Cº441
ht
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
I,smhO05=
D
niaGlangiSllamS
RWSVtupnIzHM0005-CD=f-1:2.1
RWSVtuptuOzHM0005-CD=f-1:3.1
noitalosIesreveR
egatloVeciveD V0.4
:snoitidnoCtseT:sretemaraP
Cº52=T,Am53=
noisserpmoCBd1tarewoPtuptuO
tnioPtpecretnIredrOdrihT
mBd0=enotreptuorewoP
• Cellular, PCS, CDPD
• Wireless Data, SONET
zHM058=f
zHM0591=f
zHM0042=f
zHM058=f
zHM0591=f
zHM0042=f
zHM058=f
zHM0591=f
zHM0042=f
zHM058=f
zHM0591=f
zHM0042=f
1
stinU .niM .pyT .xaM
mBd
mBd
mBd
mBd
mBd
mBd
Bd
Bd
Bd
Bd
Bd
Bd
5.41
0.51
6.51
8.52
0.72
0.72
9.02
9.81
0.81
4.32
2.22
6.12
EDS-101103 Rev C
Page 2
NGA-386 DC-5.0 GHz 4.0V GaAs HBT
Absolute Maximum Ratings
Preliminary
Preliminary
Operation of this device above any one of these
parameters may cause permanent damage.
Bias Conditions should also satisfy the following
expression: IDVD (max) < (TJ - TOP)/Rth,j-l
Key parameters, at typical operating frequencies:
lacipyT
retemaraP
zHM005
niaG
3PItuptuO
Bd1PtuptuO
ssoLnruteRtupnI
noitalosI
zHM058
niaG
3PItuptuO
Bd1PtuptuO
ssoLnruteRtupnI
noitalosI
zHM0591
niaG
3PItuptuO
Bd1PtuptuO
ssoLnruteRtupnI
noitalosI
zHM0042
niaG
3PItuptuO
Bd1PtuptuO
ssoLnruteRtupnI
noitalosI
Cº52
3.12
Bd
1.52
6.41
8.62
6.32
9.02
Bd
Bd
Bd
8.52
5.41
8.42
4.32
9.81
Bd
Bd
Bd
0.72
0.51
0.22
2.22
0.81
Bd
Bd
Bd
0.72
6.51
0.12
6.12
Bd
Bd
retemaraPeulaVtinU
tnerruCylppuS09Am
egatloVeciveD0.6V
erutarepmeTgnitarepO58+ot04-Cº
rewoPtupnImumixaM01+mBd
egnaRerutarepmeTegarotS051+ot04-Cº
erutarepmeTnoitcnuJgnitarepO051+Cº
noitidnoCtseT
tinU
I(
D
mBd
)detonesiwrehtosselnu,Am53=
mBd0=enotreptuoP,zHM1=gnicapsenoT
mBd
mBd
mBd0=enotreptuoP,zHM1=gnicapsenoT
mBd
mBd
mBd0=enotreptuoP,zHM1=gnicapsenoT
mBd
mBd
mBd0=enotreptuoP,zHM1=gnicapsenoT
mBd
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
2
EDS-101103 Rev C
Page 3
#niPnoitcnuFnoitpircseDcitamehcSeciveD
1 NIFRfoesuehtseriuqernipsihT.niptupniFR
2 DNGtsebroF.dnuorgotnoitcennoC
3 /TUOFR
SAIB
4 DNG.2niPsaemaS
Application Schematic for Operation at 850 MHz
seulaVrotsiseRsaiBdednemmoceR
ylppuS
V5V8V9V21
)sV(egatloV
saibR
03021051042
For 9V operation or higher, a resistor with a power
handling capability of 1/2W or greater is recommended.
)smhO(
Preliminary
Preliminary
NGA-386 DC-5.0 GHz 4.0V GaAs HBT
nesohcroticapacgnikcolbCDlanretxena
.noitarepofoycneuqerfehtrof
otesolcsa(selohaivesuecnamrofrep
daelecuderot)elbissopsasdaeldnuorg
.ecnatcudni
siegatlovCD.nipsaibdnatuptuoFR
CDaerofereht,nipsihtnotneserp
rofyrassecensiroticapacgnikcolb
.noitareporeporp
1uF
68pF
R bias
Vs
33nH
50 ohm
microstrip
2
50 ohm
microstrip
1
3
100pF
4
100pF
Application Schematic for Operation at 1950 MHz
50 ohm
microstrip
1uF
22pF
2
1
3
68pF
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
4
3
22nH
68pF
R bias
50 ohm
microstrip
Vs
EDS-101103 Rev C
Page 4
NGA-386 DC-5.0 GHz 4.0V GaAs HBT
S-parameters over frequency, at 25ºC
Preliminary
Preliminary
dB
dB
S21, ID =35mA, T=25ºC
25
20
15
10
5
0
01234567
Frequency GHz
0
-5
-10
-15
-20
-25
-30
01234567
Frequency GHz
dB
dB
S12, ID =35mA, T=25ºC
0
-5
-10
-15
-20
-25
-30
01234567
Frequency GHz
S22, ID =35mA, T=25ºCS1 1, ID =35mA, T=25ºC
0
-5
-10
-15
-20
-25
-30
01234567
Frequency GHz
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
4
EDS-101103 Rev C
Page 5
Preliminary
Preliminary
NGA-386 DC-5.0 GHz 4.0V GaAs HBT
Typical S-Parameters, ID = 35mA ( No external matching, de-embedded to device leads)
11S 12S 21S 22S
zHGqerF gam gnA Bd gam gnA Bd gam gnA gam gnA
50.0
01.0
02.0
03.0
04.0
05.0
06.0
07.0
08.0
09.0
00.1
01.1
02.1
03.1
04.1
05.1
06.1
07.1
08.1
09.1
00.2
02.2
04.2
06.2
08.2
00.3
02.3
04.3
06.3
08.3
00.4
05.4
00.5
05.5
00.6
05.6
00.7
830.00817.12621.218716.32-660.00450.0081-
230.02716.12420.216717.32-660.01550.0971-
430.06515.12329.111717.32-560.02750.0771-
730.07415.12458.117617.32-560.02950.0471-
240.06314.12067.112617.32-660.03260.0471-
640.00313.12656.118516.32-660.04660.0371-
840.03212.12984.114516.32-660.05070.0471-
150.08111.12043.110515.32-760.05370.0371-
750.05110.12361.115414.32-760.06970.0571-
850.01118.02020.112414.32-860.06280.0671-
160.08017.02818.018313.32-860.07980.0771-
460.04015.02985.014312.32-960.07590.0871-
660.01013.02173.010311.32-070.08101.0081-
860.0992.02022.017210.32-170.09501.0971
270.0990.02210.013219.22-270.09211.0771
370.0698.91057.99118.22-370.09911.0571
470.0396.91415.95116.22-470.09621.0371
570.0394.91763.93115.22-570.001131.0171
970.0392.91921.99014.22-670.001931.0961
080.0290.91709.86012.22-770.001641.0761
180.0198.81286.83011.22-870.001451.0461
580.0194.81123.8799.12-180.001071.0061
090.0290.81998.7196.12-380.001881.0451
690.0496.71185.7684.12-680.001502.0941
501.0792.71712.7081.12-980.09422.0441
311.00018.61619.6578.02-190.09142.0041
421.02014.61346.6176.02-390.08852.0631
631.03010.61982.6563.02-690.07872.0231
641.04016.51600.6161.02-990.07392.0821
851.05012.51537.5759.91-101.05903.0421
471.07019.41245.5357.91-401.05813.0221
512.05011.41140.5241.91-111.01353.0711
642.03013.31146.4136.81-711.02-204.0111
482.01016.21152.4123.81-221.07-544.0301
913.0798.11309.3210.81-621.011-574.079
353.0291.11995.337.71-031.041-305.019
683.0785.01463.36-4.71-531.091-435.048
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
5
EDS-101103 Rev C
Page 6
Preliminary
Preliminary
NGA-386 DC-5.0 GHz 4.0V GaAs HBT
Caution: ESD sensitive
Appropriate precautions in handling, packaging and
testing devices must be observed.
N3
Part Number Ordering Information
rebmuNtraPeziSleeRleeR/seciveD
683-AGN"70001
Part Symbolization
The part will be symbolized with a “N3” designator
on the top surface of the package.
Package Dimensions
PCB Pad Layout
N3
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
6
EDS-101103 Rev C
Page 7
For 86 Outline
NGA-386 DC-5.0 GHz 4.0V GaAs HBT
Component T ape and Reel Packaging
T ape Dimensions
Preliminary
Preliminary
D
ESCRIPTION
ytivaC htgneL
htdiW
tekcoS
htpeD
hctiP
retemaideloHmottoB
noitarofreP retemaiD
hctiP
noitisoP
epaTrevoC htdiW
ssenkcihTepaT
epaTreirraC htdiW
ssenkcihTepaT
ecnatsiD )noitceriDhtdiW(noitarofrePotytivaC
)noitceriDhtgneL(noitarofrePotytivaC
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
7
S
YMBOL
W
S
IZE(MM
A
B
H
K
P
D
1
D
o
P
o
E
C
t
)
01.0±01.6
01.0±02.6
01.0±01.3
01.0±00.2
01.0±00.8
.nim05.1
01.0±05.1
01.0±00.4
01.0±57.1
52.0±01.9
10.0±50.0
03.0±00.21
T
F
P
2
EDS-101103 Rev C
50.0±03.0
50.0±05.5
50.0±00.2
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