Page 1
GaAs MES FET
DESCRIPTION
NE76184A is a N-channel GaAs MES FET housed in ceramic package. The device is fabricated by ion implantation for
improved RF and DC performance reliability and uniformity. Its
excellent low noise and high associated gain make it suitable
for DBS, TVRO, GPS and another commercial systems.
FEATURES
• Low noise figure & High associated gain
NF = 0.8 dB TYP., G
a = 12 dB TYP. at f = 4 GHz
ORDERING INFORMATION
PART NUMBER
SUPPLYING
LEAD LENGTH
FORM
NE76184A-SL STICK L = 1.7 mm MIN.
NE76184A-T1 Tape & reel L = 1.0 ± 0.2 mm
NE76184A-T1A
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage VDS 5.0 V
Gate to Source Voltage V
GSO –5.0 V
Gate to Drain Voltage V
GDO –6.0 V
Drain Current I
D 100 mA
Total Power Dissipation P
tot 300 mW
Channel Temperature T
ch 150 ˚C
Storage Temperature T
stg –65 to +150 ˚C
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Gate to Source Leak Current IGSO ––10
µ
AVGS = –5 V
Saturated Drain Current IDSS 30 – 100 mA VDS = 3 V, VGS = 0
Gate to Source Cutoff Voltage VGS (off) –0.5 – –3.0 V VDS = 3 V, ID = 100 µA
Transconductance gm 20 45 – mS VDS = 3 V, ID = 10 mA
Noise Figure NF – 0.8 1.4 dB
VDD = 3 V
f = 4 GHz
Associated Gain Ga –12–dB
I
D
= 10 mA
Power Gain Gs – 6 – dB f = 12 GHz
IDSS rank is specified as follows. (K: 30 to 100 mA, N: 30 to 65 mA, M: 55 to 100 mA)
Document No. P10852EJ2V0DS00 (2nd edition)
(Previous No. TC-2303)
Data Published October 1995 P
Printed in Japan
NE76184A
PACKAGE DIMENSIONS
(Unit: mm)
1.78 ±0.2
L
L
1.78 ±0.2
L
24
3
0.5 TYP.
L
0.5 TYP.
J
0.1 1.7 MAX.
1. Source
2. Drain
3. Source
4. Gate
1
GENERAL PURPOSE FET N-CHANNEL GaAs MES FET
©
1991
DATA SHEET
Page 2
NE76184A
2
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
T
A
- Ambient Temperature - ˚C
0 50 100 150 200
500
400
300
200
100
P
tot
- Total Power Dissipation - mW
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
0 1 3 4 52
80
60
20
I
D
- Drain Current - mA
40
VGS = 0 V
–0.2 V
–0.4 V
–0.6 V
–0.8 V
–1.0 V
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
V
GS
- Gate to Source Voltage - V
–2.0 –1.0 0
80
60
40
20
0
I
D
- Drain Current - mA
VDS = 3 V
NOISE FIGURE, ASSOCIATED GAIN vs.
FREQUENCY
f - Frequency - GHz
0 2 30
5
4
3
2
1
NF - Noise Figure - dB
4 6 810 14
20
16
12
8
4
V
DS
= 3 V
I
D
= 10 mA
NF
Ga
G
a
- Associated Gain - dB
Page 3
3
NE76184A
MAXIMUM AVAILABLE GAIN, FORWARD
INSERTION GAIN vs. FREQUENCY
f - Frequency - GHz
01 20
20
16
12
8
4
MSG - Maximum Stable Gain - dB
MAG - Maximum Available Gain - dB
|S
21s
|
2
- Forward Insertion Gain - dB
2468
V
DS
= 3 V
I
D
= 10 mA
1012
MSG
|S
21s
|
2
MAG
NOISE FIGURE, ASSOCIATED GAIN vs.
RATIO OF DRAIN CURRENT AND
ZERO-GATE VOLTAGE CURRENT
I
DS/IDSS
- Ratio of Drain Current and Zero-Gate
Voltage Current - %
2
3.0
2.5
2.0
1.5
NF - Noise Figure - dB
10
1.0
0.5
0
1468
40
100
20
60 80
V
DS
= 3 V
f = 4 GHz
16
14
12
10
8
6
4
G
a
NF
G
a
- Associated Gain - dB
Gain Calculations
MSG
S
S
K
1SS
2S S
MSG
S
S
KK1 SS SS
21
12
2
11222
2
12 21
21
12
2
11 22 21 12
==
+− −
=±−
=⋅−⋅
∆
∆
OUTPUT POWER vs. INPUT POWER
Pin - Input Power - dBm
–10
+15
Pout - Output Power - dBm
VDS = 3 V, ID = 30 mA
f
in
= 11 GHz
+10
+5
0
–5
–5 0 +5 +10
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NE76184A
4
S-PARAMETERS
VDS = 3 V, ID = 10 mA
START 500 MHz STOP 12 GHz STEP 500 MHz
0.5
1.0
2.0
1.00.5
3
1
0
–0.5
–1.0
–2.0
2
135˚
±180˚
–135˚
–90˚
–45˚
0˚
45˚
90˚
0
0.1
0.2
0.3
0.4
0.5
1
2
3
S
11
S
12
135˚
–135˚
–90˚
–45˚
0˚
45˚
90˚
0
0.20.30.4
1
S
21
±180˚
0.10.5
2
3
0.5
1.0
2.0
1.00.5
1
0
–0.5
–1.0
–2.0
S
22
2
3
Marker
1. 4 GHz
2. 8 GHz
3. 12 GHz
∞
∞
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5
NE76184A
S-PARAMETER
MAG. AND ANG.
V
DS = 3 V, ID = 10 mA
FREQUENCY S11 S21 S12 S22
MHz MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG.
500.0000 0.993 –14.4 3.919 166.5 0.022 80.3 0.716 –9.9
1000.0000 0.971 –28.4 3.820 153.5 0.042 71.6 0.702 –19.1
1500.0000 0.936 –41.9 3.714 140.9 0.061 62.0 0.682 –28.2
2000.0000 0.896 –54.8 3.562 129.0 0.079 54.1 0.652 –36.8
2500.0000 0.850 –67.4 3.388 117.8 0.092 46.4 0.623 –44.8
3000.0000 0.808 –79.4 3.238 107.0 0.103 39.9 0.592 –52.6
3500.0000 0.761 –91.3 3.069 96.4 0.112 33.5 0.563 –60.9
4000.0000 0.720 –102.7 2.909 86.4 0.120 27.5 0.533 –68.1
4500.0000 0.681 –113.9 2.765 77.0 0.125 22.2 0.501 –75.7
5000.0000 0.647 –124.4 2.623 67.9 0.127 17.6 0.475 –83.5
5500.0000 0.615 –134.9 2.485 59.1 0.131 13.6 0.454 –91.4
6000.0000 0.588 –144.8 2.365 50.7 0.131 9.6 0.437 –98.9
6500.0000 0.566 –154.5 2.252 42.6 0.133 6.5 0.425 –107.1
7000.0000 0.547 –163.6 2.151 34.7 0.135 3.7 0.418 –114.4
7500.0000 0.531 –172.4 2.064 27.3 0.136 1.9 0.414 –121.8
8000.0000 0.517 178.7 1.985 19.6 0.139 –0.8 0.415 –129.3
8500.0000 0.503 169.6 1.909 12.2 0.141 –3.0 0.418 –136.4
9000.0000 0.492 160.5 1.843 5.0 0.143 –5.3 0.418 –143.7
9500.0000 0.482 151.1 1.783 –2.5 0.148 –7.3 0.417 –151.0
10000.0000 0.475 141.3 1.726 –9.6 0.152 –9.4 0.419 –158.4
10500.0000 0.475 131.5 1.668 –17.0 0.156 –11.3 0.418 –166.4
11000.0000 0.477 121.6 1.613 –23.8 0.160 –13.8 0.421 –174.2
11500.0000 0.481 112.1 1.554 –31.0 0.165 –16.2 0.431 177.3
12000.0000 0.489 102.7 1.503 –38.0 0.170 –18.8 0.441 169.6
VDS = 3 V, ID = 30 mA
FREQUENCY S11 S21 S12 S22
MHz MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG.
500.0000 0.990 –16.6 5.304 165.1 0.019 79.5 0.617 –10.3
1000.0000 0.957 –32.6 5.115 150.9 0.037 71.5 0.599 –19.9
1500.0000 0.911 –47.6 4.866 137.4 0.052 62.3 0.577 –28.9
2000.0000 0.860 –62.0 4.587 124.8 0.065 55.0 0.545 –37.4
2500.0000 0.805 –75.5 4.282 113.3 0.075 48.7 0.515 –44.9
3000.0000 0.755 –88.4 4.009 102.5 0.085 42.9 0.485 –52.1
3500.0000 0.707 –100.7 3.741 92.1 0.092 38.2 0.456 –59.4
4000.0000 0.663 –112.5 3.493 82.3 0.097 33.6 0.431 –66.6
4500.0000 0.626 –124.0 3.275 73.3 0.103 30.2 0.404 –73.7
5000.0000 0.594 –134.8 3.078 64.5 0.107 26.7 0.382 –81.2
5500.0000 0.566 –145.4 2.888 56.2 0.110 23.3 0.365 –88.5
6000.0000 0.546 –155.4 2.729 48.2 0.114 21.3 0.351 –96.3
6500.0000 0.528 –165.1 2.581 40.6 0.118 18.6 0.343 –104.1
7000.0000 0.513 –174.3 2.455 33.0 0.122 17.1 0.339 –111.7
7500.0000 0.501 176.9 2.344 25.8 0.128 14.8 0.340 –119.3
8000.0000 0.490 167.9 2.242 18.5 0.133 13.1 0.343 –126.8
8500.0000 0.480 158.9 2.151 11.3 0.139 10.6 0.350 –133.8
9000.0000 0.472 149.8 2.069 4.2 0.147 7.6 0.350 –141.3
9500.0000 0.466 140.6 1.997 –2.7 0.153 5.5 0.352 –148.9
10000.0000 0.465 130.8 1.924 –9.7 0.161 2.2 0.355 –156.2
10500.0000 0.468 121.2 1.855 –16.8 0.168 –0.6 0.357 –165.0
11000.0000 0.476 112.0 1.791 –23.4 0.175 –4.6 0.363 –173.1
11500.0000 0.483 102.7 1.727 –30.4 0.182 –7.6 0.373 178.2
12000.0000 0.494 93.9 1.665 –37.2 0.189 –10.6 0.385 169.9
Page 6
NE76184A
6
AMP PARAMETERS
VDS = 3 V, ID = 10 mA
FREQUENCY GUmax. GAmax. |S21|
2
|S12|
2
K Delay Mason’s U G1 G2
MHz dB dB dB dB ns dB dB dB
500.0000 33.77 11.86 –33.16 0.07 0.072 49.375 18.78 3.13
1000.0000 27.00 11.64 –27.43 0.14 0.072 12.40 2.95
1500.0000 23.21 11.40 –24.28 0.23 0.070 29.663 9.10 2.72
2000.0000 20.48 11.03 –22.09 0.30 0.066 28.208 7.04 2.41
2500.0000 18.30 10.60 –20.74 0.37 0.062 25.690 5.57 2.14
3000.0000 16.68 10.21 –19.78 0.43 0.060 25.762 4.60 1.88
3500.0000 15.16 9.74 –18.99 0.50 0.059 24.501 3.76 1.66
4000.0000 13.90 9.28 –18.42 0.57 0.056 23.383 3.17 1.45
4500.0000 12.80 8.83 –18.06 0.64 0.052 21.885 2.71 1.25
5000.0000 11.84 8.38 –17.91 0.72 0.051 20.810 2.35 1.11
5500.0000 10.97 7.91 –17.68 0.79 0.049 20.093 2.06 1.00
6000.0000 10.24 7.48 –17.62 0.86 0.046 18.766 1.84 0.92
6500.0000 9.59 7.05 –17.50 0.92 0.045 18.307 1.67 0.86
7000.0000 9.03 6.65 –17.40 0.98 0.044 17.776 1.54 0.84
7500.0000 8.55 10.85 6.29 –17.35 1.03 0.041 17.422 1.44 0.82
8000.0000 8.13 10.17 5.95 –17.13 1.05 0.042 17.410 1.35 0.82
8500.0000 7.72 9.49 5.62 –17.05 1.09 0.041 16.680 1.27 0.83
9000.0000 7.35 8.99 5.31 –16.87 1.12 0.040 16.073 1.20 0.84
9500.0000 7.00 8.57 5.02 –16.60 1.14 0.042 15.587 1.15 0.83
10000.0000 6.69 8.20 4.74 –16.38 1.15 0.040 14.945 1.11 0.84
10500.0000 6.39 7.84 4.44 –16.16 1.16 0.041 14.161 1.11 0.83
11000.0000 6.12 7.58 4.16 –15.89 1.16 0.038 13.620 1.12 0.85
11500.0000 5.86 7.31 3.83 –15.67 1.16 0.040 12.913 1.14 0.89
12000.0000 5.67 7.19 3.54 –15.37 1.14 0.039 12.582 1.19 0.94
VDS = 3 V, ID = 30 mA
FREQUENCY GUmax. GAmax. |S21|
2
|S12|
2
K Delay Mason’s U G1 G2
MHz dB dB dB dB ns dB dB dB
500.0000 33.74 14.49 –34.36 0.09 0.079 38.817 17.17 2.08
1000.0000 26.88 14.18 –28.71 0.19 0.079 41.142 10.77 1.93
1500.0000 23.20 13.74 –25.66 0.29 0.075 31.251 7.71 1.75
2000.0000 20.60 13.23 –23.68 0.38 0.070 29.809 5.84 1.53
2500.0000 18.51 12.63 –22.51 0.47 0.064 27.934 4.53 1.34
3000.0000 16.90 12.06 –21.42 0.55 0.060 27.066 3.67 1.16
3500.0000 15.48 11.46 –20.70 0.63 0.058 26.502 3.00 1.01
4000.0000 14.27 10.86 –20.27 0.72 0.054 24.356 2.51 0.89
4500.0000 13.24 10.30 –19.73 0.79 0.050 24.031 2.16 0.77
5000.0000 12.34 9.76 –19.43 0.87 0.048 22.392 1.89 0.69
5500.0000 11.51 9.21 –19.15 0.94 0.047 20.841 1.68 0.62
6000.0000 10.83 8.72 –18.90 1.00 0.044 20.194 1.54 0.57
6500.0000 10.19 12.13 8.24 –18.55 1.04 0.042 19.396 1.42 0.54
7000.0000 9.66 11.34 7.80 –18.25 1.08 0.042 19.008 1.33 0.53
7500.0000 9.16 10.79 7.40 –17.85 1.09 0.040 18.783 1.26 0.53
8000.0000 8.75 10.29 7.01 –17.50 1.10 0.040 18.372 1.19 0.55
8500.0000 8.35 9.85 6.65 –17.17 1.12 0.040 17.707 1.14 0.57
9000.0000 7.98 9.48 6.32 –16.68 1.11 0.039 17.361 1.10 0.57
9500.0000 7.65 9.10 6.01 –16.32 1.11 0.039 16.512 1.07 0.57
10000.0000 7.33 8.81 5.68 –15.87 1.10 0.039 16.047 1.06 0.59
10500.0000 7.03 8.50 5.37 –15.51 1.10 0.039 15.174 1.07 0.59
11000.0000 6.79 8.33 5.06 –15.16 1.09 0.037 14.844 1.11 0.61
11500.0000 6.55 8.15 4.75 –14.80 1.07 0.039 14.143 1.16 0.65
12000.0000 6.34 8.02 4.43 –14.48 1.05 0.038 13.483 1.22 0.70
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7
NE76184A
NOISE PARAMETERS
<Γopt. vs. frequency>
1.0
0.5
0
–0.5
–1.0
–2.0
∞
2.0
2
4
6
8
1.0
10
12 14
V
DS
= 3 V
I
D
= 10 mA
START 2 GHz, STOP 14 GHz, STEP 2 GHz
<Noise Parameter>
V
DS = 3 V, ID = 10 mA
Freq. NF
MIN.
G
a
Γ
opt.
Rn/50
(GHz) (dB) (dB)
MAG. ANG.(deg.)
2.0 0.65 16.0 0.75 37 0.52
4.0 0.80 12.2 0.66 78 0.42
6.0 1.25 10.3 0.56 124 0.33
8.0 1.75 8.5 0.49 166 0.20
10.0 2.10 7.6 0.47 –151 0.28
12.0 2.65 6.5 0.45 –112 0.49
14.0 3.20 5.5 0.46 –64 0.56
Page 8
NE76184A
8
RECOMMENDED SOLDERING CONDITIONS
The following conditions (see table below) must be met when soldering this product.
Please consult with our sales offices in case other soldering process is used, or in case soldering is done
under different conditions.
<TYPES OF SURFACE MOUNT DEVICE>
For more details, refer to our document “SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL”
(IEI-1207).
Soldering
Soldering conditions Symbol
process
Infrared ray reflow Peak package’s surface temperature: 230 ˚C or below, IR30-00
Reflow time: 30 seconds or below (210 ˚C or higher),
Number of reflow process: 1, Exposure limit*: None
Partial heating method Terminal temperature: 230 ˚C or below,
Flow time: 10 seconds or below,
Exposure limit*: None
* Exposure limit before soldering after dry-pack package is opened.
Storage conditions: 25 ˚C and relative humidity at 65 % or less.
Note Do not apply more than a single process at once, except for “Partial heating method”.
PRECAUTION Avoid high static voltage and electric fields, because this device is MES FET with GaAs shottky
barrier gate.
Caution
The Great Care must be taken in dealing with the devices in this guide.
The reason is that the material of the devices is GaAs (Gallium Arsenide), which is
designated as harmful substance according to the Japanese law concerned.
Keep the Japanese law concerned and so on, especially in case of removal.
Page 9
9
NE76184A
[MEMO]
Page 10
NE76184A
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11
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