Datasheet NE5539 Datasheet (Philips)

RF COMMUNICATIONS PRODUCTS

NE/SE5539

High frequency operational amplifier

Product specification April 15, 1992
IC11

Philips Semiconductors

Philips Semiconductors Product specification

NE/SE5539High frequency operational amplifier

DESCRIPTION

The NE/SE5539 is a very wide bandwidth, high slew rate, monolithic
operational amplifier for use in video amplifiers, RF amplifiers, and
extremely high slew rate amplifiers.

Emitter-follower inputs provide a true differential input impedance
device. Proper external compensation will allow design operation
over a wide range of closed-loop gains, both inverting and
non-inverting, to meet specific design requirements.

FEA TURES

•Bandwidth

– Unity gain - 350MHz
– Full power - 48MHz
– GBW - 1.2GHz at 17dB

•Slew rate: 600/Vµs

•A

: 52dB typical

VOL

•Low noise - 4nV√Hz typical

•MIL-STD processing available

APPLICA TIONS

•High speed datacom

•Video monitors & TV

PIN CONFIGURA TION

D, F, N Packages

OS

A

V

NC

NC

ADJ

ADJ

NC

1

2

3

4

5

/

6

7

+ INPUT

-V

SUPPLY

V

GROUND

Top View

Figure 1. Pin Configuration

•Satellite communications

•Image processing

•RF instrumentation & oscillators

•Magnetic storage

•Military communications

+–

14

- INPUT

13

NC
FREQUENCY

12

COMPENS.

NC

11

10

+V

9

NC

8

OUTPUT

SL00570

ORDERING INFORMATION

DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG #

14-Pin Plastic Dual In-Line Package (DIP) 0 to +70°C NE5539N SOT27-1
14-Pin Plastic Small Outline (SO) package 0 to +70°C NE5539D SOT108-1
14-Pin Ceramic Dual In-Line Package 0 to +70°C NE5539F 0581B
14-Pin Ceramic Dual In-Line Package -55 to +125°C SE5539F 0581B

ABSOLUTE MAXIMUM RATINGS

SYMBOL

V

CC

P

DMAX

T

A

T

STG

T

J

T

SOLD

NOTES:

1. Differential input voltage should not exceed 0.25V to prevent excesive input bias current and common-mode voltage 2.5V. These voltage
limits may be exceeded if current is limited to less than 10mA.

2. Derate above 25°C, at the following rates:

Supply voltage ±12 V
Maximum power dissipation,

= 25°C (still-air)

T

A

F package
N package
D package

Operating temperature range

NE
SE

Storage temperature range -65 to +150 °C
Max junction temperature 150 °C
Lead soldering temperature (10sec max) +300 °C

F package at 9.3mW/°C
N package at 11.6mW/°C
D package at 7.9mW/°C

1

PARAMETER RATING UNITS

2

1.17

1.45

0.99

0 to 70

-55 to +125

W
W
W

°C
°C

1992 Apr 15 853-0814 06456

2

Philips Semiconductors Product specification

SYMBOL

PARAMETER

TEST CONDITIONS

UNITS

CMRR

C

dB

NE/SE5539High frequency operational amplifier

EQUIVALENT CIRCUIT

(12) FREQUENCY COMP.

(10) +V

CC

(–) 14
INVERTING INPUT

(+) 1

NON–INVERTING

INPUT

5

R

18

Q

R

R

13

Q

R

11

R

12

R

14

10

Q

11

R

15

R

R

1

Q

2

20

R

1

R

16

R

19

2

Q

9

R

17

R

3

Q

5

Q

6

R

6

4

Q

3

R

4

R

8

Q

5

Q

7

Q

R

21

R

7

8

R

2.2k

(8) OUTPUT

10

(7) GRD

CC

SL00571

R

9

(3) –V

Figure 2. Equivalent Circuit

DC ELECTRICAL CHARACTERISTICS

VCC = ±8V, TA = 25°C; unless otherwise specified.

V

I

R

R

1992 Apr 15

Input offset voltage VO = 0V, RS = 100Ω

OS

∆VOS/∆T 5 5 µV/°C

Input offset current

OS

∆IOS/∆T 0.5 0.5 nA/°C

I

Input bias current

B

∆IB/∆T 10 10 nA/°C

ommon mode rejection ratio

Input impedance 100 100 kΩ

IN

Output impedance 10 10 Ω

OUT

F = 1kHz, RS = 100Ω, VCM ±1.7V 70 80 70 80

SE5539 NE5539

MIN TYP MAX MIN TYP MAX

Over temp 2 5
TA = 25°C

2 3 2.5 5

Over temp 0.1 3
TA = 25°C

0.1 1 2

Over temp 6 25
TA = 25°C

5 13 5 20

Over temp 70 80

3

mV

µA

µA

Philips Semiconductors Product specification

SYMBOL

PARAMETER

TEST CONDITIONS

UNITS

V

Output

V
I

Positi

t

A

I

N

t

A

PSRR

P

V/V

A

VOL

Large signal voltage gain

dB

A

VOL

Large signal voltage gain

dB

SYMBOL

PARAMETER

TEST CONDITIONS

UNITS

VOSI

V

IOSI

t

A

IBI

t

A

I

Positi

t

A

I

N

t

A

PSRR

P

∆V

±1V

V/V

V

Output

V

NE/SE5539High frequency operational amplifier

DC ELECTRICAL CHARACTERISTICS (Continued)

VCC = ±8V, TA = 25°C; unless otherwise specified.

SE5539 NE5539

MIN TYP MAX MIN TYP MAX

V

A

A

A

OUT

OUT

CC+

CC-

VOL

VOL

VOL

Output voltage swing

voltage swing

ve supply curren

egative supply curren

ower supply rejection ratio

Large signal voltage gain

Large signal voltage gain

Large signal voltage gain

RL = 150Ω to GND and

470Ω to -V

CC

RL = 25Ω to GND

Over temp

RL = 25Ω to GND

= 25°C

T

A

VO = 0, R1 = ∞, Over temp 14 18

VO = 0, R1 = ∞, TA = 25°C 14 17 14 18

VO = 0, R1 = ∞, Over temp 11 15

VO = 0, R1 = ∞, TA = 25°C 11 14 11 15

∆VCC = ±1V, Over temp 300 1000

∆VCC = ±1V, TA = 25°C 200 1000

VO = +2.3V , -1.7V, RL = 150Ω to

GND, 470Ω to -V

VO = +2.3V , -1.7V

RL = 2Ω to GND TA = 25°C 47 52 57

VO = +2.5V , -2.0V

RL = 2Ω to GND TA = 25°C 48 53 58

+Swing

-Swing

+Swing

-Swing

+Swing

-Swing

CC

Over
temp

Over
temp

+2.3

+3.0

-1.5

+2.5

-2.0

-2.1

+3.1

-2.7

46 60

+2.3

+2.7

-1.7

-2.2

47 52 57 dB

V

m

m

µ

dB

dB

DC ELECTRICAL CHARACTERISTICS

VCC = ±6V, TA = 25°C; unless otherwise specified.

SE5539

MIN TYP MAX

nput offset voltage

nput offset curren

nput bias curren

CMRR Common-mode rejection ratio VCM = ±1.3V, RS = 100Ω 70 85 dB

CC+

CC-

ve supply curren

egative supply curren

ower supply rejection ratio

CC

=

Over +Swing +1.4 +2.0

OUT

voltage swing

RL = 150Ω to GND temp –Swing –1.1 –1.7
and 390Ω to –V

CC

TA = +Swing +1.5 +2.0

25°C –Swing –1.4 –1.8

Over temp 2 5

TA = 25°C 2 3

Over temp 0.1 3

TA = 25°C 0.1 1

Over temp 5 20

TA = 25°C 4 10

Over temp 11 14

TA = 25°C 11 13

Over temp 8 11

TA = 25°CmA 8 10

Over temp 300 1000

TA = 25°C

m

µ

µ

m

m

µ

1992 Apr 15

4

Philips Semiconductors Product specification

SYMBOL

PARAMETER

TEST CONDITIONS

UNITS

SYMBOL

PARAMETER

TEST CONDITIONS

UNITS

BW

MH

NE/SE5539High frequency operational amplifier

AC ELECTRICAL CHARACTERISTICS

VCC = ±8V, RL = 150Ω to GND and 470Ω to -VCC, unless otherwise specified.

SE5539 NE5539

MIN TYP MAX MIN TYP MAX

BW Gain bandwidth product ACL = 7, VO = 0.1 V

Small signal bandwidth ACL = 2, RL = 150Ω

t

Settling time ACL = 2, RL = 150Ω

S

SR Slew rate ACL = 2, RL = 150Ω
t

Propagation delay ACL = 2, RL = 150Ω

PD

Full power response ACL = 2, RL = 150Ω
Full power response AV = 7, RL = 150Ω

P-P

1
1
1
1
1

1

Input noise voltage RS = 50Ω, 1MHz 4 4 nV/√Hz
Input noise current 1MHz 6 6 pA/√Hz

NOTES:

1. External compensation.

AC ELECTRICAL CHARACTERISTICS

VCC = ±6V, RL = 150Ω to GND and 390Ω to -VCC, unless otherwise specified.

Gain bandwidth product ACL = 7 700
Small signal bandwidth ACL = 2

t

Settling time ACL = 2

S

SR Slew rate ACL = 2
t

Propagation delay ACL = 2

PD

Full power response ACL = 2

NOTES:

1. External compensation.

1
1
1
1
1

1200 1200 MHz

110 110 MHz

15 15 ns

600 600 V/µs

7 7 ns
48 48 MHz
20 20 MHz

SE5539

MIN TYP MAX

120

23 ns

330 V/µs

4.5 ns
20 MHz

z

TYPICAL PERFORMANCE CURVES

NE5539 Open-Loop Phase

0

90

180

PHASE (DEG)

270

360

1 MHz 10MHz 100MHz 1GHz

FREQUENCY (Hz)

Figure 3. NE5539 Open-Loop Phase

1992 Apr 15

SL00572

NE5539 Open-Loop Gain

60

50

40

30

GAIN (dB)

20

10

0

1 MHz 10MHz 100MHz 1GHz

FREQUENCY (Hz)

SL00573

Figure 4. NE5539 Open-Loop Gain

5

Philips Semiconductors Product specification

NE/SE5539High frequency operational amplifier

TYPICAL PERFORMANCE CURVES (Continued)

Power Bandwidth (SE) Power Bandwidth (NE)

4

5

3

4

3dB B.W

3

p–p OUTPUT (V)

GAIN (—2)

= +8V

V

2

1

CC

= 2kΩ

R

L

1 MHz 10MHz 100MHz 300Mhz

FREQUENCY (Hz)

2

p–p OUTPUT (V)

1

0

1 MHz 10MHz 100MHz 300Mhz

VCC = +6V

= 150kΩ

R

L

GAIN (—2)

3dB B.W.

FREQUENCY (Hz)

SE5539 Open-Loop Gain vs Frequency Power Bandwidth

50

40

30

VCC = +6V

20

GAIN (dB)

10

o

0

1 MHz 10MHz 100MHz 300Mhz

R

= 126Ω

L

FREQUENCY (Hz)

SE5539 Open-Loop Phase vs Frequency Gain Bandwidth Product vs Frequency

0°

45°

90°

PHASE (DEG)

135°
180°

VCC = ±6V
RL = 126Ω

1MHz 10MHz 100MHz

FREQUENCY (Hz)

300MHz

REF

3.04V
P-P

–2
–4
–6
–8

dB BELOW REF
–10

–12

22

20
18

GAIN (dB)

16
14

12

GAIN (–7)
RL = 150Ω

1MHz 10MHz 100MHz

A

= X10

V

AV = X7.5

1MHz 10MHz 100MHz

FREQUENCY (Hz)

3dB BANDWIDTH

3dB BANDWIDTH

FREQUENCY (Hz)

300MHz

VCC = ±6V
RL = 150Ω

300MHz

NOTE:

1992 Apr 15

Indicates typical
distribution –55°C ≤ T

≤ 125°C

A

SL00574

Figure 5. Typical Performance Curves

6

Philips Semiconductors Product specification

NE/SE5539High frequency operational amplifier

CIRCUIT LAYOUT CONSIDERATIONS

As may be expected for an ultra-high frequency, wide-gain
bandwidth amplifier, the physical circuit is extremely critical.

OPTIONAL

OFFSET

+V –V

R1 = 75Ω 5% CARBON

= 75Ω 5% CARBON

R

2

R

= 75Ω 5% CARBON

3

= 36K 5% CARBON

R

4

ADJ.

R

5

R

4

R

1

75

V

IN

R

2

75

Bread-boarding is not recommended. A double-sided copper-clad
printed circuit board will result in more favorable system operation.
An example utilizing a 28dB non-inverting amp is shown in Figure 6.

R

F

1nF

+V

RFC

–14

NE5539

7

+1

RFC

—V

R5 = 20k TRIMPOT (CERMET)
R

= 1.5k (28dB GAIN)

F

R6 = 470Ω 5% CARBON

1nF

10

8

470

3

1nF

1nF

75

R

3

R

6

V

OUT

RFC 3T # 26 BUSS WIRE ON
FERROXCUBE VK 200 09/3B CORE
BYPASS CAPACITORS
1nF CERAMIC
(MEPCO OR EQUIV.)

75

TERM

Ω

Top Plane Copper

(Component Side)

1

Component Side

(Component Layout)

—V

RFC

X

R

2

(1)

X

V

IN

XX

X
X

R

5

R

6

R

4

X

X

XX

R

Bottom Plane

X

R

1

+V

X

C

C

RFC

R

F

5

Copper

1

SL00575

Figure 6. 28dB Non-Inverting Amp Sample PC Layout

1992 Apr 15

7

Philips Semiconductors Product specification

NE/SE5539High frequency operational amplifier

NE5539 COLOR VIDEO AMPLIFIER

The NE5539 wideband operational amplifier is easily adapted for
use as a color video amplifier. A typical circuit is shown in Figure 7
along with vector-scope1 photographs showing the amplifier
differential gain and phase response to a standard five-step
modulated staircase linearity signal (Figures 8, 9 and 10). As can
be seen in Figure 9, the gain varies less than 0.5% from the bottom
to the top of the staircase. The maximum differential phase shown
in Figure 10 is approximately +0.1°.

The amplifier circuit was optimized for a 75Ω input and output
termionation impedance with a gain of approximately 10 (20dB).

NOTE:

1. The input signal was 200mV and the output 2V . V

750

75

—

V

IN

+

75

—V

22nF

14

10

8

3

7

1

—V

22nF

1

75

470

—V

was ±8V.

CC

6dB LOSS—1

Z

= 75Ω

O

75

SL00578

Figure 9. Differential Gain <0.5%

NOTE:

Instruments used for these measurements were Tektronix 146
NTSC test signal generator, 520A NTSC vectorscope, and 1480
waveform monitor.

Figure 7. NE5539 Video Amplifier

Figure 8. Input Signal

SL00576

SL00577

1992 Apr 15

8

Philips Semiconductors Product specification

NE/SE5539High frequency operational amplifier

SL00579

Figure 10. Differential Gain +0.1

o

ZIN = 500

+2V

–8V

1

Ω

820

220

1K

2–10pF

+

NE5539

–

14

C

LEAD

2K

≈ 1.5pF

470

118

8

87

ZO = 50

Ω

SL00580

Figure 11. Non-Inverting Follower

+8V

–8V

1

+

320

2–20pF

1K

50

NE5539

–

14

3.3pF

470

8

1K

118

87

SL00581

Figure 12. Inverting Follower

1992 Apr 15

9

Philips Semiconductors Product specification

NE/SE5539High frequency operational amplifier

DIP14: plastic dual in-line package; 14 leads (300 mil) SOT27-1

April 15, 1992

10

Philips Semiconductors Product specification

NE/SE5539High frequency operational amplifier

SO14: plastic small outline package; 14 leads; body width 3.9 mm SOT108-1

April 15, 1992

11

Philips Semiconductors Product specification

NE/SE5539High frequency operational amplifier

0581B 14-PIN (300 mils wide) CERAMIC DUAL IN-LINE (F) PACKAGE

and include allowance for glass overrun and meniscus

on the seal line, and lid to base mismatch.

constrained to be perpendicular to plane T.

shown in parentheses.

NOTES:

1. Controlling dimension: Inches. Millimeters are

2. Dimension and tolerancing per ANSI Y14. 5M-1982.

3. “T”, “D”, and “E” are reference datums on the body

0.110 (2.79)

0.050 (1.27)

0.286 (7.26)

0.245 (6.22)

counterclockwise to Pin #14 when viewed

from the top.

4. These dimensions measured with the leads

5. Pin numbers start with Pin #1 and continue

(NOTE 4)

0.320 (8.13)

0.290 (7.37)

0.175 (4.45)

0.145 (3.68)

0.200 (5.08)

0.165 (4.19)

0.045 (1.143)

0.020 (0.51)

0.165 (4.19)

0.125 (3.18)

BSC

(NOTE 4)

0.300 (7.62)

0.010 (0.254)TED

0.395 (10.03)

0.300 (7.62)

0.015 (0.38)

0.010 (0.25)

853-0581B 06688

April 15, 1992

0.110 (2.79)

0.050 (1.27)

– E –

0.100 (2.54) BSC

PIN # 1

0.785 (19.94)

0.753 (19.13)

– D –

0.070 (1.78)

0.050 (1.27)

12

0.023 (0.58)

0.015 (0.38)

PLANE

SEATING

– T –

Philips Semiconductors Product specification

NE/SE5539High frequency operational amplifier

DEFINITIONS

Data Sheet Identification Product Status Definition

Objective Specification

Preliminary Specification

Product Specification

Formative or in Design

Preproduction Product

Full Production

Philips Semiconductors and Philips Electronics North America Corporation reserve the right to make changes, without notice, in the products,
including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright,
or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified. Applications that are described herein for any of these products are for illustrative purposes
only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing
or modification.

LIFE SUPPORT APPLICA TIONS
Philips Semiconductors and Philips Electronics North America Corporation Products are not designed for use in life support appliances, devices,
or systems where malfunction of a Philips Semiconductors and Philips Electronics North America Corporation Product can reasonably be expected
to result in a personal injury. Philips Semiconductors and Philips Electronics North America Corporation customers using or selling Philips
Semiconductors and Philips Electronics North America Corporation Products for use in such applications do so at their own risk and agree to fully
indemnify Philips Semiconductors and Philips Electronics North America Corporation for any damages resulting from such improper use or sale.

Philips Semiconductors
811 East Arques Avenue
P.O. Box 3409
Sunnyvale, California 94088–3409
Telephone [phone]

This data sheet contains the design target or goal specifications for product development. Specifications
may change in any manner without notice.

This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips
Semiconductors reserves the right to make changes at any time without notice in order to improve design
and supply the best possible product.

This data sheet contains Final Specifications. Philips Semiconductors reserves the right to make changes
at any time without notice, in order to improve design and supply the best possible product.

Philips Semiconductors and Philips Electronics North America Corporation

register eligible circuits under the Semiconductor Chip Protection Act.

 Copyright Philips Electronics North America Corporation 1992

All rights reserved. Printed in U.S.A.

April 15, 1992

13