
DATA SHEET
LASER DIODE
NDL7620P Series
1 310 nm OPTICAL FIBER COMMUNICATIONS
InGaAsP STRAINED MQW-DFB LASER DIODE
COAXIAL MODULE FOR 2.5 Gb/s
DESCRIPTION
The NDL7620P Series is a 1 310 nm λ/4-phase-shifted DFB (Distributed Feed-Back) laser diode coaxial module
with internal optical isolator. Newly developed strained Multiple Quantum Well (st-MQW) structure is adopted to
achieve stable dynamic single longitudinal mode operation over wide temperature range of 0 to +70 °C. It is
designed for STM-16 applications.
FEATURES
•High-speed response tr = 40 ps, tf = 100 ps
•Peak emission wavelength
•Wide operating temperature range TC = 0 to +70 °C
•Internal optical isolator
•λ/4-phase-shifted DFB
•InGaAs monitor PIN-PD
p
= 1 310 nm
λ
NDL7620P
Optical Fiber
SM-9/125
Length: 1 m
φ
7±0.2
4.1±0.8
6±0.1
φ
PIN CONNECTIONS
φ
P.C.D. = 2
43
1
2
3.2±0.25
φ
7±0.2
φ
15
29.0±1.0
8.0
5.3±0.8
20±1.0
4
1
Case
PACKAGE DIMENSIONS
in millimeters
NDL7620P1
φ
0.45
±0.05
3
2
Optical Fiber
SM-9/125
Length: 1 m
φ
7±0.2
Optical Fiber
3
2
SM-9/125
Length: 1 m
φ
0.45
±0.05
P.C.D. = 2
φ
7±0.2
φ
φ
2– 2.2
6±1.0
φ
12.7±0.2
17.0±0.2
PIN CONNECTIONS
φ
43
2
1
3.2±0.25
15
8.0
1.0±0.1
4.0±0.2
20±1.0 29.0±1.0
2.0±0.2
3.7±0.3
0.9
φ
4
1
7.2±0.3
Case
PD
LD
φ
0.9
PD
LD
0.5±0.2
φ
16
NDL7620P2
15
8.0
2.5±1.0
–
φ
2
2.5
φ
29.3±1.0
19.5±1.0
φ
7±0.2
3.2±0.25
φ
0.3
PIN CONNECTIONS
P.C.D. = 2
2
1
3
4
12±0.15
16.0
0.9
3
0.3
PD
2
LD
4
φ
4– 0.45
±0.05
1
Case
The information in this document is subject to change without notice.
Document No. P11351EJ4V0DS00 (4th edition)
Date Published February 1998 NS CP(K)
Printed in Japan
The mark
••••
shows major revised points.
1996©

ORDERING INFORMATION
Part Number Available Connector Flange Type
NDL7620P Without Connector No Flange
NDL7620PC With FC-PC Connector
NDL7620PD With SC-PC Connector
NDL7620P1 Without Connector Flat Mount Flange
NDL7620P1C With FC-PC Connector
NDL7620P1D With SC-PC Connector
NDL7620P2 Without Connector Vertical Flange
NDL7620P2C With FC-PC Connector
NDL7620P2D With SC-PC Connector
ABSOLUTE MAXIMUM RATINGS (TC = 0 to +70 °°°°C, unless otherwise specified)
Parameter Symbol Ratings Unit
NDL7620P Series
Forward Current of LD I
Optical Output Power from Fiber P
Reverse Voltage of LD V
Forward Current of PD I
Reverse Voltage of PD V
Operating Case Temperature T
Storage Temperature T
Lead Soldering Temperature (10 s)
F
f
R
F
R
C
stg
sld
T
150 mA
5.0 mW
2.0 V
10 mA
20 V
0 to +70
−
40 to +85
260
°
C
°
C
°
C
2

NDL7620P Series
ELECTRO-OPTICAL CHARACTERISTICS (TC = 0 to +70 °°°°C, unless otherwise specified)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Forward Voltage V
Optical Output Power from Fiber P
Threshold Current I
Differential Effi c i ency from Fiber
Temperature Dependence of
Differential Effi c i ency from Fiber
Peak Emission Wavel ength
F
Pf = 2 mW, TC = 25 °C0.91.4V
f
IF = Ith + 40 mA 2.0 mW
th
η
d
Pf = 2 mW 0.05 W/A
η
d
∆η
d
∆
d
= 10 lo
λ
p
Pf = 1 mW, Ib = Ith, 1 290 1 310 1 330 nm
(TC = 70 °C)
η
d
(TC = 25 °C)
−
3.5
−
2.5 dB
45 mA
Side Mode Suppression Ratio SMSR 2.5 G/s-NRZ, PN 1/2 30 40 dB
Rise Time t
Fall Time t
Monitor Current I
Monitor Dark Current I
Monitor PD Terminal Capacitanc e C
Tracking Error
f
*1
= 10 log
γ
P
2 mW
(mW)
r
10-90%, Ib = 0.9 × I
f
90-10%, Ib = 0.9 × I
m
VR = 5 V, Pf = 2 mW 50 2 000
D
VR = 5 V, TC = 25 °C0.55.0nA
t
VR = 5 V 1.0 1.5 pF
*1
γ
Im = const. 1.0 dB
P
f
2
P
f
th
th
40 125 ps
100 200 ps
µ
TC = 25 ˚C
T
C
= 0 to +70 ˚C
A
0
I
m
(@ P
f
(25 ˚C) = 2 mW)
I
m
3

TYPICAL CHARACTERISTICS (TC = 25 °°°°C, unless otherwise specified)
NDL7620P Series
OPTICAL OUTPUT POWER FROM FIBER vs.
FORWARD CURRENT
10
(mW)
f
8
TC = 0 ˚C
6
25 ˚C
4
70 ˚C
2
Optical Output Power from Fiber P
0 20406080
100
Forward Current IF (mA)
FREQUENCY RESPONSE (S21)
f
= 2 mW
P
OPERATING CURRENT AND THRESHOLD
CURRENT vs. CASE TEMPERATURE
100
50
(mA),
(mA)
th
op
30
20
10
Threshold Current I
Operating Current I
5
–20
0 204060
Case Temperature T
I
op
I
th
C
(˚C)
Pf = 2 mW
RETURN LOSS CHARACTERISTICS (S11)
Pf = 2 mW
80
Response (3 dB/div.)
0.05 2.55
Frequency f (GHz)
LONGITUDINAL MODE
10
–30
Relative Intensity
–70
1.3054 1.3154 1.3254
Wavelength λ (nm)
TC = 0 ˚C,
2.488 Gb/s,
NRZ,
b
= I
th
I
5.05
Return Loss (10 dB/div.)
0.05 2.55
Frequency f (GHz)
LONGITUDINAL MODE
10
–30
Relative Intensity
–70
1.3114 1.3214 1.3314
Wavelength λ (nm)
TC = 70 ˚C,
2.488 Gb/s,
NRZ,
b
= I
th
I
5.05
4

NDL7620P Series
EYE DIAGRAM
TC = 25 ˚C
Relative Intensity
Time Base (100 ps/div.)
ERROR RATE CHARACTERISTICS
–5
10
2.5 Gb/s, NRZ,
–6
10
–7
10
–8
10
Bit Error Rate
–9
10
–10
10
–11
10
back to back
after 50 km
–36 –35 –34 –33 –32 –31 –30
Average Received Power P (dBm)
Ref. = –14 dB
TC = 0 ˚C
70 ˚C
Relative Intensity
EYE DIAGRAM
Time Base (100 ps/div.)
T
C
= 70 ˚C
Remark
The measurement of TYPICAL CHARACTERISTICS are only for reference, not guaranteed.
5

NDL7620P Series
REFERENCE
Document Name Document No.
NEC semiconductor device reliability/quality control system C11159E
Quality grades on NEC semic onductor devices C11531E
Semiconductor device mounting technology manual C10535E
Semiconductor selection guide X10679E
6

NDL7620P Series
CAUTION
Within this device there exists GaAs (Gallium Arsenide) material which is a
harmful substance if ingested. Please do not under any circumstances break the
hermetic seal.
NEC Corporation
DANGER
INVISIBLE LASER RADIATION
AVOID DIRECT EXPOSURE TO BEAM
OUTPUT POWER mW MAX
WAVELENGTH nm
CLASS lllb LASER PRODUCT
SEMICONDUCTOR LASER
AVOID EXPOSURE-Invisible
Laser Radiation is emitted from
this aperture
The export of this product from Japan is prohibited without governmental license. To export or re-export this product from
a country other than Japan may also be prohibited without a license from that country. Please call an NEC sales
representative.
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
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device before using it in a particular application.
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The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
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Anti-radioactive design is not implemented in this product.
NEC Building, 7-1, Shiba 5-chome,
Minato-ku, Tokyo 108-01, Japan
Type number:
Manufactured:
Serial Number:
This product conforms to FDA
regulations as applicable
to standards 21 CFR Chapter 1.
Subchapter J.
M4 96. 5