Datasheet NDL7605P4D, NDL7605P2C, NDL7605P2D, NDL7605P4C, NDL7605P4X Datasheet (NEC)

DATA SHEET

LASER DIODE

NDL7605P Series

1 310 nm OPTICAL CATV RETURN PATH APPLICATIONS

InGaAsP MQW DFB LASER DIODE MODULE WITH ISOLATOR

DESCRIPTION

The NDL7605P Series is a 1 310 nm uncooled isolated coaxial DFB laser diode. It is especially designed for

optical CATV return path applications.

FEATURES

• Low distortion IMD2 = −50 dBc MAX.*1@ TC = 25 °C
IMD2 = −45 dBc MAX.*1@ TC = −40 to +85 °C
IMD3 = −60 dBc MAX.*1@ TC = −40 to +85 °C

f

• Output power P

• Long wavelength λ

• Internal InGaAs monitor PD and isolator

• Single mode fiber pigtail with FC-UPC, SC-UPC or SC-APC connector

• Wide operating temperature range TC = −40 to +85 °C

= 2.0 mW

p

= 1 310 nm

2-ch, Optical loss = 7 dB, OMI = 10 %/ch

*1

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.

Document No. P14039EJ2V0DS00 (2nd edition)
Date Published July 1999 NS CP(K)
Printed in Japan

The mark

••••

shows major revised points.

©

1999

PACKAGE DIMENSIONS (in millimeters)

NDL7605P Series

Optical Fiber
SM-9/125

Length: 1 m

φ

7±0.2

P.C.D. = 2

NDL7605P

φ

3.2±0.25

8 15

29.0±1.0

4.1±0.8

5.3±0.8

20±1.0

φ

6±0.1

PIN CONNECTIONS

φ

3

4

7±0.2

2

1

φ

4
1

CASE

PD

LD

φ

0.9

φ

0.45±0.05

3
2

Optical Fiber
SM-9/125

Length: 1 m

φ

7±0.2

–

φ

2

2.2

2.0±0.2

P.C.D. = 2

NDL7605P1

φ

3.2±0.25

8 15

29.0±1.0

4.0±0.2

20±1.0

6±0.1

φ

12.7±0.2

17.0±0.2

PIN CONNECTIONS

φ

3

4

2

1

3.7±0.3

1.0±0.1

4
1

7.2±0.3

CASE

φ

0.9

φ

0.45±0.05

PD

LD

3
2

Optical Fiber
SM-9/125

Length: 1 m

φ

7±0.2

0.5±0.2

φ

16

NDL7605P2

φ

3.2±0.25

8 15

29.3±1.0

0.3

2.5±1.0

19.5±1.0

PIN CONNECTIONS

φ

–

2

2.5

φ

7±0.2

2

1

3

4

12±0.15

16.0

P.C.D. = 2

NDL7605P4

φ

0.9

12.6±0.2

24.7±1.0

12.6±0.2

0.2

2.54±0.3

φ

4– 0.45±0.05

0.3

2

PD

3

1

CASE

LD

4

3.81±0.3

3

2

4–0.5
PIN 1, 4, 5, 8

4

5

3

6

2

7

1

8

4– 0.45

φ

PIN 2, 3, 6, 7

Optical Fiber
SM-9/125
Length: 1 m

6.3±0.2

12.6±0.2
7±0.2

φ

5.1±0.1

5.1±0.2

10.2±0.2

1.27±0.2

2.54±0.3

3.6±0.5

PIN CONNECTIONS

Pin No.

1
2
3
4
5
6
7
8

Function

NC
PD anode
PD cathode
NC
NC
LD cathode
LD anode
NC

2

Data Sheet P14039EJ2V0DS00

ORDERING INFORMATION

Part Number Available Connector Flange Type
NDL7605PC With FC-UPC Connector No Flange
NDL7605PD With SC-UPC Connector
NDL7605PX With SC-A PC Connector
NDL7605P1C With FC-UPC Connector Flat Mount Flange
NDL7605P1D With SC-UPC Connector
NDL7605P1X With SC-A PC Connector
NDL7605P2C With FC-UPC Connector Vertical Flange
NDL7605P2D With SC-UPC Connector
NDL7605P2X With SC-A PC Connector
NDL7605P4C With FC-UPC Connector Lead Bend
NDL7605P4D With SC-UPC Connector
NDL7605P4X With SC-A PC Connector

NDL7605P Series

ABSOLUTE MAXIMUM RATINGS (TC = 25 °°°°C, unless otherwise specified)

Parameter Symbol Ratings Unit
Optical Output Power from Fiber P
Forward Current of LD I
Reverse Voltage of LD V
Forward Current of PD I
Reverse Voltage of PD V
Operating Case Temperature T
Storage Temperature T
Lead Soldering Temperature (10 s) T

f

F

R

F

R

C

stg

sld

5mW

Ith + 50 mA

2.0 V
10 mA
15 V

−

40 to +85

−

40 to +85

260

°

C

°

C

°

C

Data Sheet P14039EJ2V0DS00

3

ELECTRO-OPTICAL CHARACTERISTICS

C

(T

= 25 °°°°C, Optical Reflection ≤≤≤≤ −−−−50 dB, unless otherwise specified)

Parameter Symbol Conditions MIN. TYP. MAX. Unit

NDL7605P Series

Forward Voltage V
Optical Output Power from Fiber P
Threshold Current I

F

IF = 30 mA 0.9 1.1 1.3 V

f

CW 2.0 mW

th

CW 15 30 mA
CW, TC = 85 °C4060

η

∆η

d

Pf = 2.0 mW 0.080 0.200 W/A

d

Pf = 2.0 mW, η (85 °C) / η (25 °C)

−

3.0 dB

Differential Effi c i ency from Fiber
Temperature Dependence of

Differential Effi c i ency from Fiber

λ

Peak Emission Wavel ength

p

Pf = 2.0 mW, RMS (−20 dB) 1 290 1 310 1 330 nm
Side Mode Suppression Ratio SMSR Pf = 2.0 mW 30 dB
2nd Order Inter-modulation Distort i on IMD2

3rd Order Inter-modulation Distort i on IMD3
Carrier to Noise Ratio CNR
Monitor Current I
Dark Current I
Tracking Error

m

D

*2

γ

*1

C

= −40 to +85 °C

, T

*1

C

, T

= −40 to +85 °C

*1

C

= −40 to +85 °C

, T

*1

52 dB
VR = 5 V, Pf = 2.0 mW 100 500 1 000
VR = 5 V 0.1 10 nA
Im = const., Pf = 2.0 mW,

C

T

= −40 to +85 °C

−

50 dBc

−

45

−

60 dBc

1.5 dB

µ

Optical Isolation ISO 30 dB

A

Conditions: P

*1

γ = 10 log

*2

= 2.0 mW, TC = 25 °C, 2 channel unmodulated carriers 13 MHz and 19 MHz,

f

Optical Reflection = −50 dB, Optical Loss = 7 dB, OMI = 10 %/ch

f

P

2.0 mW

Pf (mW)

C

= 25 ˚C

T

2.0

f

P

0

(@ P

m

I

f

(25 ˚C) = 2.0 mW)

TC = –40 to +85 ˚C

I

m

4

Data Sheet P14039EJ2V0DS00

TYPICAL CHARACTERISTICS (TC = 25 °°°°C, unless otherwise specified)

NDL7605P Series

OPTICAL OUTPUT POWER FROM
FORWARD CURRENT

5.0
+25 ˚C

F

(mA)

+85 ˚C

0

TC = –40 ˚C

20 40 60 80 100

Forward Current I

(mW)

f

4.0

3.0

2.0

1.0

Optical Output Power from Fiber P

TEMPERATURE DEPENEDENCE OF

DIFFERENTIAL EFFICIENCY FROM FIBER

0.18

(W/A)

d

η

0.12

OPERATING CURRENT AND THRESHOLD
CURRENT vs. CASE TEMPERATURE

100

Iop@Pf = 2 mW

(mA),

(mA)

th

op

I

10

Threshold Current I

Operating Current I

1

–60 0 40 80 100–40 –20 20 60

th

Case Temperature TC (˚C)

OPTICAL OUTPUT POWER FROM

FIBER vs.MONITOR CURRENT

5.0

(mW)

f

4.0

3.0

0.06

0.00

Differential Efficiency from Fiber

–40–60 –20 0 20 40 60 80 100

Case Temperature TC (˚C)

FORWARD CURRENT vs.
FORWARD VOLTAGE

100

80

(mA)

F

60

40

Forward Current I

20

0

0.5 1.0 1.5 2.0 2.5
Forward Voltage VF (V)

2.0

1.0

Optical Output Power from Fiber P

0.50

Monitor Current Im (mA)

1.0 1.5

LONGITUDINAL MODE FROM FIBER

10

0
–10
–20
–30
–40
–50

Relative Intensity (dB)

–60
–70

1 300 1 310 1 320

Wavelength λ (nm)

Data Sheet P14039EJ2V0DS00

5

NDL7605P Series

TEMPERATURE DEPENDENCE OF

PEAK EMISSION WAVELENGTH

1 320

(nm)

p

1 315

1 310

1 305

Peak Emission Wavelength λ

1 300

–20 0 40 80 100–60 –40 20 60

Case Temperature TC (˚C)

IMD2, IMD3, CNR vs. OPTICAL
OUTPUT POWER FROM FIBER

–40
–45
–50
–55

IMD2@6 MHz

–60
–65
–70
–75

–80

1.0 1.5 2.0 2.5 3.0

2nd Order Inter-modulation Distortion IMD2 (dBc),

3rd Order Inter-modulation Distortion IMD3 (dBc)

IMD2@32 MHz

IMD3@7 MHz

IMD3@25 MHz

Optical Output Power from Fiber Pf (mW)

2-ch,
7 dB optical loss,
m = 10 %/ch

CNR@13 MHz
CNR@19 MHz

–40
–45
–50
–55
–60
–65
–70
–75
–80

2nd Order Inter-modulation Distortion IMD2 (dBc),

3rd Order Inter-modulation Distortion IMD3 (dBc)

62
60
58
56
54
52
50
48

Carrier to Noise Ratio CNR (dB)

46

–40

P

f

= 2 mW, 2-ch,

7 dB optical loss

–45
–50
–55
–60
–65
–70
–75

–80

0 5 10 15 20 25 30

2nd Order Inter-modulation Distortion IMD2 (dBc),

3rd Order Inter-modulation Distortion IMD3 (dBc)

IMD2, IMD3, CNR vs.
CASE TEMPERATURE

P

f

= 2 mW, 2-ch,

7 dB optical loss,

IMD2@6 MHz
IMD2@32 MHz

IMD3@7 MHz
IMD3@25 MHz

–20 0 40 80 100–60 –40 20 60

Case Temperature TC (˚C)

m = 10 %/ch

CNR@13 MHz
CNR@19 MHz

IMD2, IMD3, CNR vs.
OPTICAL MODULATION INDEX

CNR@19 MHz
CNR@13 MHz
IMD2@32 MHz
IMD2@6 MHz

IMD3@7 MHz
IMD3@25 MHz

Optical Modulation Index OMI (%/ch)

62
60
58
56
54
52
50
48

Carrier to Noise Ratio CNR (dB)

46

62
60
58
56
54
52
50
48

Carrier to Noise Ratio CNR (dB)

46

Remark

6

The graphs indicate nominal characteristics.

Data Sheet P14039EJ2V0DS00

NDL7605P Series

REFERENCE

Document Name Document No.
NEC semiconductor device reliability/quality control system C11159E
Quality grades on NEC semic onductor devices C11531E
Semiconductor device mounting technology manual C10535E
SEMICONDUCTORS SELECTI ON GUIDE Products & Pack ages (CD-ROM) X13769X

Data Sheet P14039EJ2V0DS00

7

[MEMO]

NDL7605P Series

8

Data Sheet P14039EJ2V0DS00

[MEMO]

NDL7605P Series

Data Sheet P14039EJ2V0DS00

9

[MEMO]

NDL7605P Series

10

Data Sheet P14039EJ2V0DS00

NDL7605P Series

CAUTION

Within this device there exists GaAs (Gallium Arsenide) material which is a
harmful substance if ingested. Please do not under any circumstances break the
hermetic seal.

NEC Corporation

NEC Building, 7-1, Shiba 5-chome,
Minato-ku, Tokyo 108-01, Japan

Type number:
Manufactured:
Serial Number:
This product conforms to FDA
regulations as applicable
to standards 21 CFR Chapter 1.
Subchapter J.

DANGER

INVISIBLE LASER RADIATION
AVOID DIRECT EXPOSURE TO BEAM

OUTPUT POWER mW MAX
WAVELENGTH nm
CLASS lllb LASER PRODUCT

SEMICONDUCTOR LASER

AVOID EXPOSURE-Invisible
Laser Radiation is emitted from
this aperture

Data Sheet P14039EJ2V0DS00

11

NDL7605P Series

The export of this product from Japan is prohibited without governmental license. To export or re-export this product from
a country other than Japan may also be prohibited without a license from that country. Please call an NEC sales
representative.

• The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.

• No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.

• NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.

• Descriptions of circuits, software, and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these circuits,
software, and information in the design of the customer's equipment shall be done under the full responsibility
of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third
parties arising from the use of these circuits, software, and information.

• While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.

• NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.

M7 98. 8