Datasheet MX27C1024MC-12, MX27C1024QC-10, MX27C1024QC-12, MX27C1024TC-15, MX27C1024PC-15 Datasheet (MXIC)

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FEATURES
64K x 16 organization(MX27C1024, JEDEC pin
out)
128K x 8 or 64K x 16 organization(MX27C1100,
ROM pin out compatible)
+12.5V programming voltage
Fast access time: 55/70/85/100/120/150 ns
Totally static operation
Operating current: 40mA
Standby current: 100uA
Package type:
- 40 pin plastic DIP
- 40 pin plastic SOP
- 44 pin PLCC
- 40pin 10 x 14mm TSOP(I)
PIN CONFIGURATIONS
PDIP/SOP(MX27C1100)
P/N: PM0156
1
BLOCK DIAGRAM (MX27C1100)
MX27C1100/27C1024
1M-BIT [128K x 8/64K x 16] CMOS EPROM
MX27C1100
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
NC
A7 A6 A5 A4 A3 A2 A1 A0
CE
GND
OE Q0 Q8 Q1 Q9 Q2
Q10
Q3
Q11
40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21
A8 A9 A10 A11 A12 A13 A14 A15 NC BYTE/VPP GND Q15/A-1 Q7 Q14 Q6 Q13 Q5 Q12 Q4 VCC
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CONTROL
LOGIC
OUTPUT
BUFFERS
Q0~Q14 Q15/A-1
CE OE
BYTE/VPP
A0~A15
ADDRESS
INPUTS
Y-DECODER
X-DECODER
Y-SELECT
1M BIT
CELL
MAXTRIX
VCC GND
. . . . . . . .
. . . . . . . .
GENERAL DESCRIPTION
The MX27C1024 is a 5V only, 1M-bit, One Time Programmable Read Only Memory. It is organized as 64K words by 16 bits per word(MX27C1024), 128K x 8 or 64K x 16(MX27C1100), operates from a single + 5 volt supply, has a static standby mode, and features fast single address location programming. All program­ming signals are TTL levels, requiring a single pulse. For programming outside from the system, existing
EPROM programmers may be used. The MX27C1100/ 1024 supports a intelligent fast programming algorithm which can result in programming time of less than thirty seconds.
This EPROM is packaged in industry standard 40 pin dual-in-line packages, 40 lead SOP, 44 lead PLCC, and 40 lead TSOP(I) packages.
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PIN CONFIGURATIONS
PDIP/SOP(MX27C1024)
PLCC(MX27C1024)
BLOCK DIAGRAM (MX27C1024)
TSOP(I)
MX27C1024
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
VPP
CE Q15 Q14 Q13 Q12 Q11 Q10
Q9 Q8
GND
Q7 Q6 Q5 Q4 Q3 Q2 Q1 Q0
OE
40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21
VCC PGM NC A15 A14 A13 A12 A11 A10 A9 GND A8 A7 A6 A5 A4 A3 A2 A1 A0
MX27C1024
Q12 Q11 Q10
Q9 Q8
GND
NC Q7 Q6 Q5 Q4
A13 A12 A11 A10 A9 GND NC A8 A7 A6 A5
Q13
Q14
Q15CEVPPNCVCC
PGMNCA15
A14
Q3Q2Q1
Q0
OE
NC
A0A1A2A3A4
64440
39
34
29
7
12
17
18 23 28
1
CONTROL
LOGIC
OUTPUT
BUFFERS
Q0~Q15
CE
PGM
OE
A0~A15
ADDRESS
INPUTS
Y-DECODER
X-DECODER
Y-DECODER
1M BIT
CELL
MAXTRIX
VCC GND
VPP
. . . . . . . .
. . . . . . . .
A9 A10 A11 A12 A13 A14 A15
NC
PGM
VCC VPP
CE Q15 Q14 Q13 Q12 Q11 Q10
Q9
Q8
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
GND A8 A7 A6 A5 A4 A3 A2 A1 A0 OE Q0 Q1 Q2 Q3 Q4 Q5 Q6 Q7 GND
40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21
MX27C1024
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TRUTH TABLE OF BYTE FUNCTION(MX27C1100)
BYTE MODE(BYTE = GND)
CE OE Q15/A-1 MODE Q0-Q7 SUPPLY CURRENT
H X X Non selected High Z Standby(ICC2) L H X Non selected High Z Operating(ICC1) L L A-1 input Selected DOUT Operating(ICC1)
WORD MODE(BYTE = VCC)
CE OE Q15/A-1 MODE Q0-Q14 SUPPLY CURRENT
H X High Z Non selected High Z Standby(ICC2) L H High Z Non selected High Z Operating(ICC1) L L DOUT Selected DOUT Operating(ICC1)
NOTE : X = H or L
SYMBOL PIN NAME
A0~A15 Address Input Q0~Q14 Data Input/Output CE Chip Enable Input OE Output Enable Input BYTE/VPP Word/Byte Selection
/Program Supply Voltage Q15/A-1 Q15(Word mode)/LSB addr. (Byte mode) VCC Power Supply Pin (+5V) GND Ground Pin
PIN DESCRIPTION(MX27C1100)
PIN DESCRIPTION(MX27C1024)
SYMBOL PIN NAME
A0~A15 Address Input Q0~Q15 Data Input/Output CE Chip Enable Input OE Output Enable Input PGM Program Enable Input VPP Program Supply Voltage VCC Power Supply Pin (+5V) GND Ground Pin
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VIL(for MX27C1024), OE at VIL, CE at VIH(for MX27C1100)and VPP at its programming voltage.
AUTO IDENTIFY MODE
The auto identify mode allows the reading out of a binary code from an EPROM that will identify its manufacturer and device type. This mode is intended for use by programming equipment for the purpose of automatically matching the device to be programmed with its corresponding programming algorithm. This mode is functional in the 25°C ± 5°C ambient temperature range that is required when programming the MX27C1100/1024.
To activate this mode, the programming equipment must force 12.0 ± 0.5 V on address line A9 of the device. Two identifier bytes may then be sequenced from the device outputs by toggling address line A0 from VIL to VIH. All other address lines must be held at VIL during auto identify mode.
Byte 0 ( A0 = VIL) represents the manufacturer code, and byte 1 (A0 = VIH), the device identifier code. For the MX27C1100/1024, these two identifier bytes are given in the Mode Select Table. All identifiers for manufacturer and device codes will possess odd parity, with the MSB (Q15) defined as the parity bit.
READ MODE
The MX27C1100/1024 has two control functions, both of which must be logically satisfied in order to obtain data at the outputs. Chip Enable (CE) is the power control and should be used for device selection. Output Enable (OE) is the output control and should be used to gate data to the output pins, independent of device selection. Assuming that addresses are stable, address access time (tACC) is equal to the delay from CE to output (tCE). Data is available at the outputs tOE after the falling edge of OE's, assuming that CE has been LOW and addresses have been stable for at least tACC - t OE.
WORD-WIDE MODE
With BYTE/VPP at VCC ± 0.2V outputs Q0-7 present data Q0-7 and outputs Q8-15 present data Q8-15, after CE and OE are appropriately enabled.
FUNCTIONAL DESCRIPTION
THE PROGRAMMING OF THE MX27C1100/1024
When the MX27C1100/1024 is delivered, or it is erased, the chip has all 1M bits in the "ONE" or HIGH state. "ZEROs" are loaded into the MX27C1100/1024 through the procedure of programming.
For programming, the data to be programmed is applied with 16 bits in parallel to the data pins.
VCC must be applied simultaneously or before VPP, and removed simultaneously or after VPP. When programming an MXIC EPROM, a 0.1uF capacitor is required across VPP and ground to suppress spurious voltage transients which may damage the device.
FAST PROGRAMMING
The device is set up in the fast programming mode when the programming voltage VPP = 12.75V is applied, with VCC = 6.25 V and PGM = VIL(or OE = VIH) (Algorithm is shown in Figure 1). The programming is achieved by applying a single TTL low level 100us pulse to the PGM input after addresses and data line are stable. If the data is not verified, an additional pulse is applied for a maximum of 25 pulses. This process is repeated while sequencing through each address of the device. When the programming mode is completed, the data in all address is verified at VCC = VPP = 5V ± 10%.
PROGRAM INHIBIT MODE
Programming of multiple MX27C1100/1024's in parallel with different data is also easily accomplished by using the Program Inhibit Mode. Except for CE and OE, all like inputs of the parallel MX27C1100/1024 may be common. A TTL low-level program pulse applied to an MX27C1100/1024 CE input with VPP = 12.5 ± 0.5 V will program the MX27C1100/1024. A high-level CE input inhibits the other MX27C1100/1024s from being programmed.
PROGRAM VERIFY MODE
Verification should be performed on the programmed bits to determine that they were correctly programmed. The verification should be performed with OE and CE at
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arrays, a 4.7 uF bulk electrolytic capacitor should be used between VCC and GND for each eight devices. The location of the capacitor should be close to where the power supply is connected to the array.
BYTE-WIDE MODE
With BYTE/VPP at GND ± 0.2V, outputs Q8-15 are tri­stated. If Q15/A-1 = VIH, outputs Q0-7 present data bits Q8-15. If Q15/A-1 = VIL, outputs Q0-7 present data bits Q0-7.
STANDBY MODE
The MX27C1100/1024 has a CMOS standby mode which reduces the maximum VCC current to 100 uA. It is placed in CMOS standby when CE is at VCC ± 0.3 V. The MX27C1100/1024 also has a TTL-standby mode which reduces the maximum VCC current to 1.5 mA. It is placed in TTL-standby when CE is at VIH. When in standby mode, the outputs are in a high-impedance state, independent of the OE input.
TWO-LINE OUTPUT CONTROL FUNCTION
To accommodate multiple memory connections, a two­line control function is provided to allow for:
1. Low memory power dissipation,
2. Assurance that output bus contention will not occur.
It is recommended that CE be decoded and used as the primary device-selecting function, while OE be made a common connection to all devices in the array and connected to the READ line from the system control bus. This assures that all deselected memory devices are in their low-power standby mode and that the output pins are only active when data is desired from a particular memory device.
SYSTEM CONSIDERATIONS
During the switch between active and standby conditions, transient current peaks are produced on the rising and falling edges of Chip Enable. The magnitude of these transient current peaks is dependent on the output capacitance loading of the device. At a minimum, a 0.1 uF ceramic capacitor (high frequency, low inherent inductance) should be used on each device between Vcc and GND to minimize transient effects. In addition, to overcome the voltage drop caused by the inductive effects of the printed circuit board traces on EPROM
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MODE SELECT TABLE (MX27C1100)
BYTE/
MODE CE OE A9 A0 Q15/A-1 VPP(5) Q8-14 Q0-7
Read (Word) VIL VIL X X Q15 Out VCC Q8-14 Out Q0-7 Out Read (Upper Byte) VIL VIL X X VIH GND High Z Q8-15 Out Read (Lower Byte) VIL VIL X X VIL GND High Z Q0-7 Out Output Disable VIL VIH X X High Z X High Z High Z Standby VIH X X X High Z X High Z High Z Program VIL VIH X X Q15 In VPP Q8-14 In Q0-7 In Program Verify VIH VIL X X Q15 Out VPP Q8-14 Out Q0-7 Out Program Inhibit VIH VIH X X High Z VPP High Z High Z Manufacturer Code(3) VIL VIL VH VIL 0B VCC 00H C2H Device Code(3) VIL VIL VH VIH 0 B VCC 01H 12H
NOTES:1. VH = 12.0 V ± 0.5 V 2 . X = Either VIH or VIL
3. A1 - A8 = A10 - A15 = VIL(For auto select)
4. See DC Programming Characteristics for VPP voltage during programming.
NOTES: 1. VH = 12.0V ± 0.5V
2. X = Either VIH or VIL
3. A1 - A8, A10 - A15 = VIL(For auto select)
4. See DC Programming Characteristics for VPP voltages.
5. BYTE/VPP is intended for operation under DC Voltage conditions only.
MODE SELECT TABLE (MX27C1024)
PINS
MODE CE OE PGM A0 A9 VPP OUTPUTS
Read VIL VIL X X X VCC DOUT Output Disable VIL VIH X X X VCC High Z Standby (TTL) VIH X X X X VCC High Z Standby (CMOS) V CC±0.3V X X X X VCC High Z Program VIL VIH VIL X X VPP DIN Program Verify VIL VIL VIH X X VPP DOUT Program Inhibit VIH X X X X V PP High Z Manufacturer Code(3) VIL VIL X VIL VH VCC 00C2H Device Code(3) VI L VIL X VIH VH VCC 0115H
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ST AR T
ADDRESS = FIRST LOCATION
VCC = 6.25V VPP = 12.75V
X = 0
PROGRAM ONE 50us PULSE
INCREMENT X
X = 25?
VERIFY WORD
LAST ADDRESS
VCC = VPP = 5.25V
DEVICE PASSED
VERIFY ALL WORDS
?
DEVICE FAILED
INCREMENT ADDRESS
INTERACTIVE SECTION
VERIFY SECTION
FAIL
PASS
YES
PASS
NO
YES
NO
FAIL
FIGURE 1. FAST PROGRAMMING FLOW CHART
FAIL
?
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SWITCHING TEST CIRCUITS
SWITCHING TEST WAVEFORMS
2.0V
0.8V
TEST POINTS
INPUT
2.0V
0.8V OUTPUT
AC TESTING: AC driving levels are 2.4V/0.4V .
Input pulse rise and fall times are <20ns.
AC driving levels
DEVICE UNDER
TEST
DIODES = IN3064 OR EQUIVALENT
CL = 100 pF including jig capacitance (30pF for 55/70ns parts)
6.2K ohm
1.8K ohm +5V
CL
1.5V
TEST POINTS
INPUT
1.5V
OUTPUT
AC TESTING: (1) AC driving levels are 3.0V/0V.
Input pulse rise and fall times are < 10ns. (2) For MX27C1100/1024-55/70
AC driving levels
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DC CHARACTERISTICS
SYMBOL PARAMETER MIN. MAX. UNIT CONDITIONS
VOH Output High Voltage 2.4 V IOH = -0.4mA VOL Output Low Voltage 0.4 V IOL = 2.1mA VIH Input High Voltage 2.0 VCC + 0.5 V VIL Input Low Voltage -0.3 0.8 V ILI Input Leakage Current -10 10 uA VIN = 0 to 5.5V ILO Output Leakage Current -10 10 uA VOUT = 0 to 5.5V ICC3 VCC Power-Down Current 100 uA CE = VCC ± 0.3V ICC2 VCC Standby Current 1.5 mA CE = VIH ICC1 VCC Active Current 40 mA CE = VIL, f=5MHz, Iout = 0mA IPP VPP Supply Current Read 10 uA CE = OE = VIL, VPP = 5.5V
NOTICE:
Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended period may affect reliability.
NOTICE:
Specifications contained within the following tables are subject to change.
DC/AC Operating Conditions for Read Operation
ABSOLUTE MAXIMUM RATINGS
RATING VALUE
Ambient Operating Temperature -40oC to 85oC Storage Temperature -65oC to 125oC Applied Input Voltage -0.5V to 7.0V Applied Output Voltage -0.5V to VCC + 0.5V VCC to Ground Potential -0.5V to 7.0V A9 & Vpp -0.5V to 13.5V
MX27C1100/1024
-55* -70 -85 -10 -12 -15
Operating Temperature Commercial 0°C to 55°C0°C to 70°C0°C to 70°C0°C to 70°C0°C to 70°C0°C to 70°C
Industrial ** -40°C to 85°C -40°C to 85°C -40°C to 85°C -40°C to 85°C -40°C to 85°C
Vcc Power Supply Vcc ± 5% Vcc ± 10% Vcc ± 10% Vcc ± 10% Vcc ± 10% Vcc ± 10%
CAPACITANCE TA = 25
o
C, f = 1.0 MHz (Sampled only)
SYMBOL PARAMETER TYP. MAX. UNIT CONDITIONS
CIN Input Capacitance 8 12 pF VIN = 0V COUT Output Capacitance 8 12 pF VOUT = 0V CVPP VPP Capacitance 18 25 pF VPP = 0V
* : 55ns for MX27C1024 only **:Industrial grade for MX27C1024 only
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AC CHARACTERISTICS
27C1024-55 27C1100/1024-70 27C1100/1024-85
SYMBOL PARAMETER MIN. MAX. MIN. MAX. MIN. MAX. UNIT CONDITIONS
tACC Address to Output Delay 55 70 85 ns CE = OE = VIL tCE Chip Enable to Output Delay 55 70 85 ns OE = VIL tOE Output Enable to Output Delay 30 35 40 ns CE = VIL tDF OE High to Output Float, 0 20 0 20 0 25 ns
or CE High to Output Float
tOH Output Hold from Address, 0 0 0 ns
CE or OE which ever occurred first *tBHA BYTE Access Time 70 85 ns *tOHB BYTE Output Hold Time 0 0 ns *tBHZ BYTE Output Delay Time 70 70 ns *tBLZ BYTE Output Set Time 10 10 ns
AC CHARACTERISTICS
27C1100/1024-10 27C1100/1024-12 27C1100/1024-15
SYMBOL PARAMETER MIN. MAX. MIN. MAX. MIN. MAX. UNIT CONDITIONS
tACC Address to Output Delay 100 120 150 ns CE = OE = VIL tCE Chip Enable to Output Delay 100 120 150 ns OE = VIL tOE Output Enable to Output Delay 45 50 65 ns CE = VIL tDF OE High to Output Float, 0 30 0 35 0 50 ns
or CE High to Output Float
tOH Output Hold from Address, 0 0 0 ns
CE or OE which ever occurred first *tBHA BYTE Access Time 100 120 150 ns *tOHB BYTE Output Hold Time 0 0 0 ns *tBHZ BYTE Output Delay Time 70 70 70 ns *tBLZ BYTE Output Set Time 10 10 10 ns
* : for MX27C1100 only
* : for MX27C1100 only
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DC PROGRAMMING CHARACTERISTICS TA = 25
o
C ± 5oC
SYMBOL PARAMETER MIN. MAX. UNIT CONDITIONS
VOH Output High Voltage 2.4 V IOH = -0.40mA VOL Output Low Voltage 0.4 V IOL = 2.1mA VIH Input High Voltage 2.0 VCC + 0.5 V VIL Input Low Voltage -0.3 0.8 V ILI Input Leakage Current -10 10 uA VIN = 0 to 5.5V VH A9 Auto Select Voltage 11.5 12.5 V ICC3 VCC Supply Current (Program & Verify) 50 mA IPP2 VPP Supply Current(Program) 30 mA CE = VIL, OE = VIH VCC1 Fast Programming Supply Voltage 6.00 6.50 V VPP1 Fast Programming Voltage 12.5 13.0 V
AC PROGRAMMING CHARACTERISTICS TA = 25
o
C ± 5°C
SYMBOL PARAMETER MIN. MAX. UNIT CONDITIONS
tAS Address Setup Time 2.0 us tOES OE Setup Time 2.0 us tDS Data Setup Time 2.0 us tAH Address Hold Time 0 us tDH Data Hold Time 2.0 us tDFP Output Enable to Output Float Delay 0 130 ns tVPS VPP Setup Time 2.0 us tPW PGM Program Pulse Width 95 105 us tVCS VCC Setup Time 2.0 us tCES CE Setup Time 2.0 us tOE Data valid from OE 150 ns
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FAST PROGRAMMING ALGORITHM WAVEFORMS
WAVEFORMS(MX27C1024)
READ CYCLE(WORD MODE)
ADDRESS
INPUTS
DATA
OUT
OE
CE
DATA ADDRESS
VALID DATA
tDF
tACC
tCE
tOE
tOH
Addresses
CE
OE
PGM
DATA
VPP
VCC
VIH
VIL
VPP1
VCC
VCC1
VCC
VIH
VIL
VIH
VIL
VIH
VIL
DATA OUT VALID
Hi-z
DATA IN STABLE
tAS
tVPS
tVCS
tCES
tOE Max
tPW
tDS
tDH
tOES
tDFP
tAH
PROGRAM VERIFY
PROGRAM
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WAVEFORMS(MX27C1100)
READ CYCLE(BYTE MODE)
FAST PROGRAMMING ALGORITHM WAVEFORM
Addresses
CE
OE
DATA
BYTE/VPP
VCC
VIH
VIL
VPP1
VCC
VCC1
VCC
VIH
VIL
VIH
VIL
DATA OUT VALID
DATA SET
VALID ADDRESS
tAS
tVPS
tVCS
tOE
tPW
tDS
tDH
tOES
tDFP
tAH
VERIFY
PROGRAM
tACC
tOH
tBHA
tBLZ
tOHB
tBHZ
HIGH-Z
VALID DATA
VALID DATA
HIGH-Z
A-1
BYTE/VPP
Q0-Q7
Q15-Q8
VALID DATA
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PART NO. ACCESS TIME OPERATING CURRENT STANDBY CURRENT PACKAGE
(ns) MAX.(mA) MAX.(uA)
MX27C1100PC-70 70 40 100 40 Pin DIP(ROM pin out) MX27C1100PC-85 85 40 100 40 Pin DIP(ROM pin out) MX27C1100PC-10 100 40 100 40 Pin DIP(ROM pin out) MX27C1100PC-12 120 40 100 40 Pin DIP(ROM pin out) MX27C1100PC-15 150 40 100 40 Pin DIP(ROM pin out) MX27C1100MC-70 70 40 100 40 Pin SOP MX27C1100MC-85 85 40 100 40 Pin SOP MX27C1100MC-10 100 40 100 40 Pin SOP MX27C1100MC-12 120 40 100 40 Pin SOP MX27C1100MC-15 150 40 100 40 Pin SOP MX27C1024PC-55 55 40 100 40 Pin DIP(JEDEC pin out) MX27C1024PC-70 70 40 100 40 Pin DIP(JEDEC pin out) MX27C1024PC-85 85 40 100 40 Pin DIP(JEDEC pin out) MX27C1024PC-10 100 40 100 40 Pin DIP(JEDEC pin out) MX27C1024PC-12 120 40 100 40 Pin DIP(JEDEC pin out) MX27C1024PC-15 150 40 100 40 Pin DIP(JEDEC pin out) MX27C1024QC-55 55 40 100 44 Pin PLCC MX27C1024QC-70 70 40 100 44 Pin PLCC MX27C1024QC-85 85 40 100 44 Pin PLCC MX27C1024QC-10 100 40 100 44 Pin PLCC MX27C1024QC-12 120 40 100 44 Pin PLCC MX27C1024QC-15 150 40 100 44 Pin PLCC MX27C1024MC-55 55 40 100 40 Pin SOP MX27C1024MC-70 70 40 100 40 Pin SOP MX27C1024MC-85 85 40 100 40 Pin SOP MX27C1024MC-10 100 40 100 40 Pin SOP MX27C1024MC-12 120 40 100 40 Pin SOP MX27C1024MC-15 150 40 100 40 Pin SOP MX27C1024TC-55 55 40 100 40 Pin TSOP(I) MX27C1024TC-70 70 40 100 40 Pin TSOP(I) MX27C1024TC-85 85 40 100 40 Pin TSOP(I) MX27C1024TC-10 100 40 100 40 Pin TSOP(I) MX27C1024TC-12 120 40 100 40 Pin TSOP(I) MX27C1024TC-15 150 40 100 40 Pin TSOP(I) MX27C1024TI-70 70 40 100 40 Pin TSOP(I) MX27C1024TI-85 85 40 100 40 Pin TSOP(I) MX27C1024TI-10 100 40 100 40 Pin TSOP(I) MX27C1024TI-12 120 40 100 40 Pin TSOP(I)
MX27C1024TI-15 150 40 100 40 Pin TSOP(I)
ORDER INFORMATION
PLASTIC PACKAGE
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40-PIN PLASTIC DIP(600 mil)
PACKAGE INFORMATION
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44-PIN PLASTIC LEADED CHIP CARRIER(PLCC)
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40-PIN PLASTIC SOP(450 mil)
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40-PIN PLASTIC TSOP
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REVISION HISTORY
Revision No. Description Page Date
3.0 Revise speed grade from 70/90/120/150ns to 55/70/85/100/ 10/15/1996 120/150ns. Add 40 pin SOP package type.
4.0 1) Eliminate Interactive Programming Mode. 06/14/1997
2) 40-CDIP package quartz lens, change to square shape.
4.1 IPP : 100uA ----> 10uA 08/08/1997
4.2 Add industrial grade 70/85/100/120/150ns 40-TSOP(I) P15 11/19/1998
4.3 Cancel ceramic DIP package type P1,2,4,15,16 FEB/25/2000
4.4 Cancel "Ultraviolet Erasable" wording in General Description P1 AUG/20/2001 To modify Package Information P15~18
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MX27C1100/27C1024
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