Page 1
MUR805G, MUR810G,
MUR815G, MUR820G,
MUR840G, MUR860G,
MURF860G, SUR8820G,
SUR8840G
Switch-mode Power
Rectifiers
This series is designed for use in switching power supplies,
inverters and as free wheeling diodes.
Features
• Ultrafast 25 and 50 Nanosecond Recovery Time
• 175°C Operating Junction Temperature
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Low Forward Voltage
• Low Leakage Current
• Reverse Voltage to 600 V
• ESD Ratings:
♦ Machine Model = C (> 400 V)
♦ Human Body Model = 3B (> 16,000 V)
• SUR8 Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant*
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 1.9 Grams (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes: 260°C Max for 10 Seconds
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ULTRAFAST RECTIFIERS
8.0 AMPERES, 50−600 VOLTS
1
4
3
TO−220AC
CASE 221B
STYLE 1
MARKING DIAGRAMS
AY WWG
U8xx
KA
TO−220 FULLPAK
CASE 221AG
STYLE 1
AYWWG
MURF860
KA
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
February, 2014 − Rev. 13
1 Publication Order Number:
A = Assembly Location
Y = Year
WW = Work Week
U8XX = Device Code
xx = 05, 10, 15, 20, 40, or 60
G=Pb−Free Package
KA = Diode Polarity
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
MUR820/D
Page 2
MUR805G, MUR810G, MUR815G, MUR820G, MUR840G, MUR860G, MURF860G,
SUR8820G, SUR8840G
MAXIMUM RATINGS
MUR/SUR8
Rating Symbol
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Total Device, (Rated V
), TC = 150°C
R
Peak Repetitive Forward Current
(Rated V
, Square Wave, 20 kHz), TC = 150°C
R
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
V
V
I
F(AV)
I
RRM
RWM
V
I
FM
FSM
Operating Junction Temperature and Storage Temperature Range TJ, T
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol
Maximum Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Case
MURF860
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Ambiente
MURF860
R
q
R
q
R
q
R
q
805 810 815 820 840 860
50 100 150 200 400 600 V
R
8.0 A
16 A
100 A
stg
−65 to +175 °C
MUR/SUR8
805 810 815 820 840 860
JC
JC
JA
JA
3.0 2.0 °C/W
4.75
73 °C/W
75
Unit
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
MUR/SUR8
Characteristic Symbol
Maximum Instantaneous Forward Voltage (Note 1)
(i
= 8.0 A, TC = 150°C)
F
(iF = 8.0 A, TC = 25°C)
Maximum Instantaneous Reverse Current (Note 1)
v
i
(Rated DC Voltage, TJ = 150°C)
(Rated DC Voltage, TJ = 25°C)
Maximum Reverse Recovery Time
= 1.0 A, di/dt = 50 A/ms)
(I
F
(IF = 0.5 A, iR = 1.0 A, I
REC
= 0.25 A)
t
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
805 810 815 820 840 860
F
0.895
0.975
R
250
5.0
rr
35
25
1.00
1.30
Unit
V
1.20
1.50
mA
500
10
ns
60
50
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2
Page 3
MUR805G, MUR810G, MUR815G, MUR820G, MUR840G, MUR860G, MURF860G,
SUR8820G, SUR8840G
MUR805G, MUR810G, MUR815G, MUR820G, SUR8820G
100
70
50
30
20
10
7.0
5.0
3.0
2.0
T
= 175°C
, INSTANTANEOUS FORWARD CURRENT (AMPS)
F
i
1.0
J
0.7
0.5
0.3
0.2
0.1
0.2 0.50.3 0.7
0.4
v
INSTANTANEOUS VOLTAGE (VOLTS)
F,
Figure 1. Typical Forward Voltage
0.6
100°C
25°C
0.9 1.1
0.8 1.0
1.2
1000
100
m
10
1.0
, REVERSE CURRENT ( A)
R
I
0.1
TJ = 175°C
100°C
25°C
0.01
06040 100 120
20 80 200
V
, REVERSE VOLTAGE (VOLTS)
R
Figure 2. Typical Reverse Current*
* The curves shown are typical for the highest voltage device in the
grouping. Typical reverse current for lower voltage selections can be
estimated from these same curves if V
is sufficiently below rated VR.
R
10
9.0
8.0
dc
7.0
6.0
SQUARE WAVE
5.0
4.0
3.0
2.0
, AVERAGE FORWARD CURRENT (AMPS)
1.0
0
F(AV)
I
140 150
, CASE TEMPERATURE (°C)
T
C
Figure 3. Current Derating, Case
160
180140
RATED VR APPLIED
170160
180
14
12
10
8.0
6.0
4.0
2.0
, AVERAGE FORWARD CURRENT (AMPS)
F(AV)
I
R
q
R
dc
q
(NO HEAT SINK)
SQUARE WAVE
dc
SQUARE WAVE
0
0
20 40 60 80 200
100 120 140 160 180
TA, AMBIENT TEMPERATURE (°C)
Figure 4. Current Derating, Ambient
= 16°C/W
JA
= 60°C/W
JA
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10
9.0
TJ = 175°C
8.0
7.0
6.0
SQUARE WAVE
dc
5.0
4.0
3.0
2.0
, AVERAGE POWER DISSIPATION (WATTS)
1.0
F(AV)
0
P
0
1.0 2.0
3.0 4.0 10
, AVERAGE FORWARD CURRENT (AMPS)
I
F(AV)
5.0 6.0 7.0 8.0 9.0
Figure 5. Power Dissipation
3
Page 4
MUR805G, MUR810G, MUR815G, MUR820G, MUR840G, MUR860G, MURF860G,
SUR8820G, SUR8840G
MUR840G, SUR8840G
100
70
50
30
20
10
7.0
5.0
3.0
2.0
, INSTANTANEOUS FORWARD CURRENT (AMPS)
F
i
1.0
0.7
0.5
0.3
0.2
0.1
T
= 175°C
J
100°C
0.4
0.8 1.2 1.6
0.6 1.0
v
INSTANTANEOUS VOLTAGE (VOLTS)
F,
Figure 6. Typical Forward Voltage
25°C
1.4
1000
100
m
10
1.0
, REVERSE CURRENT ( A)
R
I
0.1
0.01
0 150100 250 300
50 200 500
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Typical Reverse Current*
* The curves shown are typical for the highest voltage device in the
grouping. Typical reverse current for lower voltage selections can be
estimated from these same curves if V
is sufficiently below rated VR.
R
10
9.0
8.0
dc
7.0
6.0
SQUARE WAVE
5.0
4.0
3.0
2.0
, AVERAGE FORWARD CURRENT (AMPS)
1.0
0
F(AV)
I
140 150
, CASE TEMPERATURE (°C)
T
C
Figure 8. Current Derating, Case
TJ = 175°C
150°C
100°C
25°C
450350
400
RATED VR APPLIED
170160
180
14
12
10
8.0
6.0
4.0
2.0
, AVERAGE FORWARD CURRENT (AMPS)
0
F(AV)
I
R
= 16°C/W
q
JA
R
= 60°C/W
q
JA
(NO HEAT SINK)
dc
SQUARE WAVE
dc
SQUARE WAVE
0
20 40 60 80 200
100 120 140 160 180
TA, AMBIENT TEMPERATURE (°C)
Figure 9. Current Derating, Ambient
10
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
, AVERAGE POWER DISSIPATION (WATTS)
1.0
F(AV)
0
P
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4
0
TJ = 175°C
1.0 2.0
I
F(AV)
SQUARE WAVE
dc
3.0 4.0 10
5.0 6.0 7.0 8.0 9.0
, AVERAGE FORWARD CURRENT (AMPS)
Figure 10. Power Dissipation
Page 5
MUR805G, MUR810G, MUR815G, MUR820G, MUR840G, MUR860G, MURF860G,
SUR8820G, SUR8840G
MUR860G, MURF860G
100
10
1
0.1
, INSTANTANEOUS FORWARD CURRENT (AMPS)
0.4
F
i
10
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
, AVERAGE FORWARD CURRENT (AMPS)
1.0
0
F(AV)
I
140 150
T
= 150°C
J
100°C
0.6 1.0
0.8 1.2 1.6
v
INSTANTANEOUS VOLTAGE (VOLTS)
F,
1.4
Figure 11. Typical Forward Voltage
RATED VR APPLIED
dc
SQUARE WAVE
170160
T
, CASE TEMPERATURE (°C)
C
Figure 13. Current Derating, Case
25°C
1.8
180
1000
100
m
10
1.0
, REVERSE CURRENT ( A)
R
I
0.1
0.01
200 500
VR, REVERSE VOLTAGE (VOLTS)
TJ = 150°C
100°C
25°C
400
Figure 12. Typical Reverse Current*
* The curves shown are typical for the highest voltage device in the
grouping. Typical reverse current for lower voltage selections can be
estimated from these same curves if V
10
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
, AVERAGE FORWARD CURRENT (AMPS)
1.0
F(AV)
I
0
SQUARE WAVE
SQUARE WAVE
0
dc
dc
20 40 60 80 200
TA, AMBIENT TEMPERATURE (°C)
is sufficiently below rated VR.
R
100 120 140 160 180
Figure 14. Current Derating, Ambient
R
= 16°C/W
q
JA
R
= 60°C/W
q
JA
(NO HEAT SINK)
600100 300
, AVERAGE POWER DISSIPATION (WATTS)
F(AV)
P
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
14
13
12
11
10
0
0
1.0 2.0
3.0 4.0 10
, AVERAGE FORWARD CURRENT (AMPS)
I
F(AV)
SQUARE
WAVE
dc
TJ = 175°C
5.0 6.0 7.0 8.0 9.0
Figure 15. Power Dissipation
10,000
1,000
, NON-REPETITIVE SURGE CURRENT (A)
FSM
I
100
10
100 10,000
, SQUARE WAVE PULSE DURATION (ms)
t
p
1,000
Figure 16. Typical Non−Repetitive Surge
Current
* Typical performance based on a limited sample size. ON Semiconductor
does not guarantee ratings not listed in the Maximum Ratings table.
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5
Page 6
MUR805G, MUR810G, MUR815G, MUR820G, MUR840G, MUR860G, MURF860G,
SUR8820G, SUR8840G
1.0
0.5
D = 0.5
0.2
0.1
0.05
0.02
0.1
0.05
0.01
SINGLE PULSE
P
(pk)
t
1
t
2
DUTY CYCLE, D = t1/t
Z
= r(t) R
q
JC(t)
R
q
JC
q
= 1.5°C/W MAX
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT T
T
- TC = P
2
J(pk)
(pk)
1
Z
q
JC(t)
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
t, TIME (ms)
Figure 17. Thermal Response
10
D = 0.5
0.2
1.0
0.1
0.05
0.02
0.1
0.01
(NORMALIZED) (°C/W)
0.01
SINGLE PULSE
r(t), TRANSIENT THERMAL RESPONSE
0.001
0.000001
0.010.0010.00010.00001
t, TIME (s)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t1/t
0.1
Z
(t) = r(t) R
q
JC
R
q
JC
q
JC
= 1.6°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
2
READ TIME AT t
T
- TC = P
J(pk)
(pk)
1
Z
(t)
q
JC
1.0 10 100 1000
Figure 18. Thermal Response, (MURF860G) Junction−to−Case (R
100
D = 0.5
0.2
10
0.1
0.05
0.02
1.0
0.01
0.1
(NORMALIZED) (°C/W)
0.01
0.001
r(t), TRANSIENT THERMAL RESPONSE
SINGLE PULSE
0.000001
Figure 19. Thermal Response, (MURF860G) Junction−to−Ambient (R
0.010.0010.00010.00001
t, TIME (s)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t1/t
0.1
)
q
JC
Z
(t) = r(t) R
q
JC
R
q
JC
q
JC
= 1.6°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
2
J(pk)
- TC = P
(pk)
1
Z
(t)
q
JC
1.0 10 100 1000
)
q
JA
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6
Page 7
MUR805G, MUR810G, MUR815G, MUR820G, MUR840G, MUR860G, MURF860G,
SUR8820G, SUR8840G
1000
500
200
100
50
C, CAPACITANCE (pF)
20
10
1.0 2.0 5.0 20 50
VR, REVERSE VOLTAGE (V)
Figure 20. Typical Capacitance
ORDERING INFORMATION
Device Package Shipping
MUR805G TO−220AC
(Pb−Free)
MUR810G TO−220AC
(Pb−Free)
MUR815G TO−220AC
(Pb−Free)
MUR820G TO−220AC
(Pb−Free)
SUR8820G TO−220AC
(Pb−Free)
MUR840G TO−220AC
(Pb−Free)
SUR8840G TO−220AC
(Pb−Free)
MUR860G TO−220AC
(Pb−Free)
MURF860G TO−220FP
(Pb−Free)
TJ = 25°C
10 100
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
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Page 8
MUR805G, MUR810G, MUR815G, MUR820G, MUR840G, MUR860G, MURF860G,
SUR8820G, SUR8840G
PACKAGE DIMENSIONS
TO−220 TWO−LEAD
CASE 221B−04
ISSUE F
NOTES:
C
Q
B
4
F
T
S
A
13
U
H
K
L
D
G
R
J
TO−220 FULLPAK, 2−LEAD
CASE 221AG
ISSUE A
L1
A
P
M
B
0.14
D
C
3X
b
0.25
M
M
AB
H1
M
A
C
A
A1
NOTE 3
c
A2
STYLE 1:
E
E/2
4
Q
123
L
3X
b2
e
e1
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM MIN MAX MIN MAX
A 0.595 0.620 15.11 15.75
B 0.380 0.405 9.65 10.29
C 0.160 0.190 4.06 4.82
D 0.025 0.039 0.64 1.00
F 0.142 0.161 3.61 4.09
G 0.190 0.210 4.83 5.33
H 0.110 0.130 2.79 3.30
J 0.014 0.025 0.36 0.64
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.14 1.52
Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
S 0.045 0.055 1.14 1.39
T 0.235 0.255 5.97 6.48
U 0.000 0.050 0.000 1.27
NOTES:
SEATING
B
PLANE
PIN 1. CATHODE
2. N/A
3. ANODE
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR UNCONTROLLED IN THIS AREA.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH
AND GATE PROTRUSIONS. MOLD FLASH AND GATE
PROTRUSIONS NOT TO EXCEED 0.13 PER SIDE. THESE
DIMENSIONS ARE TO BE MEASURED AT OUTERMOST
EXTREME OF THE PLASTIC BODY.
5. DIMENSION b2 DOES NOT INCLUDE DAMBAR
PROTRUSION. LEAD WIDTH INCLUDING PROTRUSION
SHALL NOT EXCEED 2.00.
MILLIMETERS
DIM MIN MAX
A 4.30 4.70
A1 2.50 2.90
A2 2.50 2.90
b 0.54 0.84
b2 1.10 1.40
c 0.49 0.79
D 14.22 15.88
E 9.65 10.67
e
2.54 BSC
e1 5.08 BSC
H1 5.97 6.48
L 12.70 14.73
L1 --- 2.80
P 3.00 3.40
Q 2.80 3.20
MILLIMETERSINCHES
STYLE 1:
PIN 1. CATHODE
2. N/A
3. ANODE
4. CATHODE
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MUR820/D
8
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