Datasheet MUR8100EG Specification

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Page 1

MUR8100E, MUR880E

MUR8100E is a Preferred Device

SWITCHMODEt Power Rectifiers

Ultrafast “E’’ Series with High Reverse Energy Capability

The MUR8100 and MUR880E diodes are designed for use in

switching power supplies, inverters and as free wheeling diodes.

Features

• 20 mJ Avalanche Energy Guaranteed

• Excellent Protection Against Voltage Transients in Switching

Inductive Load Circuits

• Ultrafast 75 Nanosecond Recovery Time

• 175°C Operating Junction Temperature

• Popular TO−220 Package

• Epoxy Meets UL 94 V−0 @ 0.125 in.

• Low Forward Voltage

• Low Leakage Current

• High Temperature Glass Passivated Junction

• Reverse Voltage to 1000 V

• Pb−Free Packages are Available*

Mechanical Characteristics:

• Case: Epoxy, Molded

• Weight: 1.9 Grams (Approximately)

• Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

• Lead Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

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ULTRAFAST RECTIFIERS

8.0 A, 800 V − 1000 V

TO−220AC

CASE 221B

MARKING DIAGRAM

AY WWG

U8xxxE

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

June, 2008 − Rev. 4

1 Publication Order Number:

A = Assembly Location Y = Year WW = Work Week G=Pb−Free Package U8xxxE = Device Code

KA = Diode Polarity

ORDERING INFORMATION

Device Package Shipping

MUR8100E TO−220 50 Units / Rail

MUR8100EG TO−220

MUR880E TO−220

Preferred devices are recommended choices for future use and best overall value.

xxx = 100 or 80

(Pb−Free)

50 Units / Rail

50 Units / RailMUR880EG TO−220

MUR8100E/D

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MUR8100E, MUR880E

MAXIMUM RATINGS

Rating Symbol Value Unit

Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage MUR880E

MUR8100E

Average Rectified Forward Current (Rated VR, TC = 150°C) Total Device

Peak Repetitive Forward Current

(Rated VR, Square Wave, 20 kHz, TC = 150°C)

Non−Repetitive Peak Surge Current

(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)

Operating Junction and Storage Temperature Range TJ, T

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

THERMAL CHARACTERISTICS

Characteristic Symbol Value Unit

Maximum Thermal Resistance, Junction−to−Case

RRM

RWM

F(AV)

FSM

800

1000

8.0 A

16 A

100 A

stg

−65 to +175 °C

2.0 °C/W

ELECTRICAL CHARACTERISTICS

Characteristic Symbol Value Unit

Maximum Instantaneous Forward Voltage (Note 1)

(iF = 8.0 A, TC = 150°C) (iF = 8.0 A, TC = 25°C)

Maximum Instantaneous Reverse Current (Note 1)

(Rated DC Voltage, TC = 100°C) (Rated DC Voltage, TC = 25°C)

Maximum Reverse Recovery Time

(IF = 1.0 A, di/dt = 50 A/ms) (IF = 0.5 A, iR = 1.0 A, I

Controlled Avalanche Energy

(See Test Circuit in Figure 6)

1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.

REC

= 0.25 A)

AVAL

1.5

1.8

500

100

20 mJ

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MUR8100E, MUR880E

100

7.0

5.0

3.0

2.0

1.0

, INSTANTANEOUS FORWARD CURRENT (AMPS)

0.7

0.5

0.3

0.2

0.1

TJ = 175°C

100°C

0.6

1.20.8 1.0 1.4 1.6

vF, INSTANTANEOUS VOLTAGE (VOLTS)

25°C

10,000

* The curves shown are typical for the highest voltage device in the voltage

* grouping. Typical reverse current for lower voltage selections can be

1000

* estimated from these same curves if V

is sufficiently below rated VR.

m, AVERAGE FORWARD CURRENT (AMPS)

100

175°C

150°C

1.0

, REVERSE CURRENT ( A)

0.1

100°C

TJ = 25°C

0.01 0

200 400 600 800 1000

VR, REVERSE VOLTAGE (VOLTS)

Figure 2. Typical Reverse Current*

9.0

8.0

7.0

6.0

SQUARE WAVE

5.0

4.0

3.0

2.0

1.0

F(AV)

1.80.4

150140

160

TC, CASE TEMPERATURE (°C)

RATED VR APPLIED

170 180

9.0

8.0

7.0

6.0

5.0

4.0

3.0

2.0

, AVERAGE FORWARD CURRENT (AMPS)I

1.0

F(AV)

SQUARE WAVE

20 600

Figure 1. Typical Forward Voltage

Figure 3. Current Derating, Case

= 16°C/W

= 60°C/W

(No Heat Sink)

TJ = 175°C

SQUARE WAVE

8.0

6.0

80 120100

140 160 200180

TA, AMBIENT TEMPERATURE (°C)

, AVERAGE POWER DISSIPATION (WATTS)

F(AV)

4.0

2.0

1.00

2.0 3.0 5.0

, AVERAGE FORWARD CURRENT (AMPS)

F(AV)

4.040

6.0 9.07.0 8.0 10

Figure 4. Current Derating, Ambient Figure 5. Power Dissipation

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MERCURY

SWITCH

MUR8100E, MUR880E

40 mH COIL

DUT

Figure 6. Test Circuit Figure 7. Current−Voltage Waveforms

The unclamped inductive switching circuit shown in Figure 6 was used to demonstrate the controlled avalanche capability of the new “E’’ series Ultrafast rectifiers. A mercury switch was used instead of an electronic switch to simulate a noisy environment when the switch was being opened.

When S1 is closed at t0 the current in the inductor IL ramps up linearly; and energy is stored in the coil. At t1 the switch is opened and the voltage across the diode under test begins to rise rapidly, due to di/dt effects, when this induced voltage reaches the breakdown voltage of the diode, it is clamped at BV

and the diode begins to conduct the full load current

DUT

which now starts to decay linearly through the diode, and goes to zero at t2.

By solving the loop equation at the point in time when S is opened; and calculating the energy that is transferred to the diode it can be shown that the total energy transferred is equal to the energy stored in the inductor plus a finite amount of energy from the VDD power supply while the diode is in

breakdown (from t1 to t2) minus any losses due to finite component resistances. Assuming the component resistive elements are small Equation (1) approximates the total energy transferred to the diode. It can be seen from this equation that if the VDD voltage is low compared to the breakdown voltage of the device, the amount of energy contributed by the supply during breakdown is small and the total energy can be assumed to be nearly equal to the energy stored in the coil during the time when S1 was closed, Equation (2).

The oscilloscope picture in Figure 8, shows the MUR8100E in this test circuit conducting a peak current of one ampere at a breakdown voltage of 1300 V, and using Equation (2) the energy absorbed by the MUR8100E is approximately 20 mjoules.

Although it is not recommended to design for this condition, the new “E’’ series provides added protection against those unforeseen transient viruses that can produce unexplained random failures in unfriendly environments.

EQUATION (1):

AVAL

EQUATION (2):

AVAL

[

2 LPK

CH1 CH2

DUT

50mV

ACQUISITIONS

1 217:33 HRS

SAVEREF SOURCE

CH1 CH2 REF REF

Figure 8. Current−Voltage Waveforms

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20ms

953 V VERT500V

STACK

CHANNEL 2: I

0.5 AMPS/DIV.

CHANNEL 1: V

DUT

500 VOLTS/DIV.

TIME BASE: 20 ms/DIV.

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MUR8100E, MUR880E

1.0

0.7

D = 0.5

0.5

0.3

0.2

0.1

0.05

0.07

(NORMALIZED)

0.05

0.01

0.03

r(t), TRANSIENT THERMAL RESISTANCE

0.02

SINGLE PULSE

0.01

0.01 0.02 0.05 0.1 0.2 0.5 200 500 1000

2.0 5.0 10 20 50

t, TIME (ms)

Figure 9. Thermal Response

1000

300

(pk)

DUTY CYCLE, D = t1/t

TJ = 25°C

(t) = r(t) R

= 1.5°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t T

J(pk)

- TC = P

(pk)

1001.0

(t)

100

C, CAPACITANCE (pF)

101.0

VR, REVERSE VOLTAGE (VOLTS)

Figure 10. Typical Capacitance

100

SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.

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MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

SCALE 1:1

TO−220, 2−LEAD

CASE 221B−04

ISSUE F

DATE 12 APR 2013

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

DIM MIN MAX MIN MAX

A 0.595 0.620 15.11 15.75 B 0.380 0.405 9.65 10.29 C 0.160 0.190 4.06 4.82 D 0.025 0.039 0.64 1.00

F 0.142 0.161 3.61 4.09 G 0.190 0.210 4.83 5.33 H 0.110 0.130 2.79 3.30 J 0.014 0.025 0.36 0.64 K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.14 1.52 Q 0.100 0.120 2.54 3.04 R 0.080 0.110 2.04 2.79 S 0.045 0.055 1.14 1.39 T 0.235 0.255 5.97 6.48 U 0.000 0.050 0.000 1.27

MILLIMETERSINCHES

STYLE 1:

PIN 1. CATHODE

2. N/A

3. ANODE

4. CATHODE

STYLE 2:

PIN 1. ANODE

2. N/A

3. CATHODE

4. ANODE

DOCUMENT NUMBER:

DESCRIPTION:

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