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MUBW50-06A7
Datasheet (IXYS)
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Datasheet MUBW50-06A7 Datasheet (IXYS)

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Page 1
Converter - Brake - Inverter Module (CBI2)
22
21
MUBW 50-06 A7
T1
T2
D1
6
D2
D11 D13 D15
23
1
D12
D14
D16
23
14
7
D7
16 15
T7
11 10
24
Three Phase Brake Chopper Three Phase Rectifier Inverter
V I
DAVM
I
FSM
RRM
= 1600V V = 44 A I = 400 A V
= 600 V V
CES
= 35 A I
C25
= 2.1 V V
CE(sat)
CES
C25
CE(sat)
= 600 V = 75 A = 1.9 V
T3
D3
D4
20 19
5
18 17
T4
12 13
NTC
T5
T6
D5
4
D6
8
9
Input Rectifier Bridge D11 - D16
Symbol Conditions Maximum Ratings V I
FAV
DAVM
FSM
P
RRM
tot
TC = 80°C; sine 180° 30 A TC = 80°C; rectangular; d = 1/3 29 A TVJ = 25°C; t = 10 ms; sine 50 Hz 400 A
TC = 25°C 120 W
1600 V
Symbol Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
V
t R
VJ
F
R
rr
thJC
IF = 50 A; TVJ = 25°C 1.5 1.8 V
TVJ = 125°C 1.6 V
VR = V
TVJ = 25°C 0.2 mA
RRM;
TVJ = 125°C2mA
VR = 100 V; IF = 20 A; di/dt = -20 A/µs 1 µs
(per diode) 1.06 K/W
min. typ. max.
Application: AC motor drives with
●
Input from single or three phase grid
●
Three phase synchronous or asynchronous motor
●
electric braking operation
Features
●
High level of integration - only one power semiconductor module required for the whole drive
●
Fast rectifier diodes for enhanced EMC behaviour
●
NPT IGBT technology with low saturation voltage, low switching losses, high RBSOA and short circuit ruggedness
●
Epitaxial free wheeling diodes with Hiperfast and soft reverse recovery
●
Industry standard package with insulated copper base plate and soldering pins for PCB mounting
●
Temperature sense included
IXYS reserves the right to change limits, test conditions and dimensions.
© 2001 IXYS All rights reserved
105
1 - 8
Page 2
MUBW 50-06 A7
Output Inverter T1 - T6
Symbol Conditions Maximum Ratings V
CES
V
GES
V
GEM
C25
C80
RBSOA VGE = ±15 V; RG = 22 Ω; TVJ = 125°CI
t
SC
(SCSOA) non-repetitive P
tot
TVJ = 25°C to 150°C 600 V
Continuous Transient
±
20 V
±
30 V
TC = 25°C75A TC = 80°C50A
= 100 A
Clamped inductive load; L = 100 µH V
V
= V
CE
; VGE = ±15 V; RG = 22 Ω; TVJ = 125°C10µs
CES
CM
CEK
≤ V
CES
TC = 25°C 250 W
Symbol Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
V
V I
CES
CE(sat)
GE(th)
VJ
IC = 50 A; VGE = 15 V; TVJ = 25°C 1.9 2.4 V
TVJ = 125°C 2.2 V
IC = 1 mA; VGE = V
V
= V
CE
CES; VGE
CE
= 0 V; TVJ = 25°C 0.8 mA
TVJ = 125°C 0.7 mA
min. typ. max.
4.5 6.5 V
Equivalent Circuits for Simulation
Conduction
D11 - D16
Rectifier Diode (typ. at TJ = 125°C)
T1 - T6 / D1 - D6
IGBT (typ. at VGE = 15 V; TJ = 125°C)
Free Wheeling Diode (typ. at TJ = 125°C)
T7 / D7
IGBT (typ. at VGE = 15 V; TJ = 125°C)
Free Wheeling Diode (typ. at TJ = 125°C)
Thermal Response
V0 = 1.0 V; R0 = 12 m
V0 = 0.82 V; R0 = 28 m
V0 = 0.89 V; R0 = 8 m
V0 = 0.9 V; R0 = 65 m
V0 = 1.07 V; R0 = 23 m
Ω
Ω
Ω
Ω
Ω
GES
t
d(on)
t
r
t
d(off)
t
f
E E
C Q
R
on off
ies
Gon
thJC
VCE = 0 V; VGE = ± 20 V 200 nA
50 ns
Inductive load, T
= 125°C
VJ
VCE = 300 V; IC = 50 A VGE = ±15 V; RG = 22 Ω
55 ns
300 ns
30 ns
2.3 mJ
1.7 mJ
VCE = 25 V; VGE = 0 V; f = 1 MHz 2800 pF V
= 300V; VGE = 15 V; IC = 50 A 120 nC
CE
(per IGBT) 0.5 K/W
Output Inverter D1 - D6
Symbol Conditions Maximum Ratings I
F25
F80
TC = 25°C72A TC = 80°C45A
Symbol Conditions Characteristic Values
min. typ. max.
V
F
RM
t
rr
R
thJC
IF = 50 A; VGE = 0 V; TVJ = 25°C 1.8 V
TVJ = 125°C 1.3 V
IF = 25 A; diF/dt = -500 A/µs; TVJ = 125°C25A VR = 300 V; VGE = 0 V 90 ns
(per diode) 1.19 K/W
D11 - D16
Rectifier Diode (typ.)
C
= 0.131 J/K; R
th1
C
= 0.839 J/K; R
th2
th1
th2
T1 - T6 / D1 - D6
IGBT (typ.)
C
= 0.221 J/K; R
th1
C
= 1.377 J/K; R
th2
th1
th2
Free Wheeling Diode (typ.)
C
= 0.116 J/K; R
th1
C
= 0.88 J/K; R
th2
th1
= 0.217 K/W
th2
T7 / D7
IGBT (typ.)
C
= 0.108 J/K; R
th1
C
= 0.921 J/K; R
th2
th1
th2
Free Wheeling Diode (typ.)
C
= 0.043 J/K; R
th1
C
= 0.54 J/K; R
th2
th1
= 0.462 K/W
th2
= 0.851 K/W = 0.209 K/W
= 0.382 K/W = 0.119 K/W
= 0.973 K/W
= 0.79 K/W
= 0.209 K/W
= 2.738 K/W
© 2001 IXYS All rights reserved
2 - 8
Page 3
Brake Chopper T7
Symbol Conditions Maximum Ratings
MUBW 50-06 A7
V
CES
V
GES
V
GEM
C25
C80
RBSOA VGE = ±15 V; RG = 47 Ω; TVJ = 125°CI
t
SC
(SCSOA) non-repetitive P
tot
TVJ = 25°C to 150°C 600 V
Continuous Transient
±
20 V
±
30 V
TC = 25°C35A TC = 80°C25A
= 40 A
Clamped inductive load; L = 100 µH V
V
= V
CE
; VGE = ±15 V; RG = 47 Ω; TVJ = 125°C10µs
CES
CM
CEK
≤ V
CES
TC = 25°C 125 W
Symbol Conditions Characteristic Values
= 25°C, unless otherwise specified)
(T
V
V I
CES
GES
t
d(on)
t
r
t
d(off)
t
f
E E
C Q
R
CE(sat)
GE(th)
on off
ies
Gon
thJC
VJ
IC = 25 A; VGE = 15 V; TVJ = 25°C 2.1 2.6 V
TVJ = 125°C 2.4 V
IC = 0.5 mA; VGE = V
V
= V
CE
CES; VGE
CE
= 0 V; TVJ = 25°C 0.5 mA
TVJ = 125°C 0.3 mA
VCE = 0 V; VGE = ± 20 V 200 nA
Inductive load, TVJ = 125°C VCE = 300 V; IC = 25 A VGE = ±15 V; RG = 47 Ω
VCE = 25 V; VGE = 0 V; f = 1 MH z 1100 pF V
= 300 V; VGE = 15 V; IC = 25 A 65 nC
CE
min. typ. max.
4.5 6.5 V
50 ns 60 ns
300 ns
30 ns
1.15 mJ
0.85 mJ
1.0 K/W
Brake Chopper D7
Symbol Conditions Maximum Ratings V
RRM
F25
F80
TVJ = 25°C to 150°C 600 V
TC = 25°C22A TC = 80°C15A
Symbol Conditions Characteristic Values
min. typ. max.
V
F
R
RM
t
rr
R
thJC
IF = 25 A; TVJ = 25°C 2.5 V
TVJ = 125°C 1.8 V
VR = V
TVJ = 25°C 0.06 mA
RRM;
TVJ = 125°C 0.07 mA
IF = 10 A; diF/dt = -400 A/µs; TVJ = 125°C11A VR = 300 V 80 ns
3.2 K/W
© 2001 IXYS All rights reserved
3 - 8
Page 4
Temperature Sensor NTC
Symbol Conditions Characteristic Values
min. typ. max.
MUBW 50-06 A7
R
25
B
25/50
T = 25°C 4.75 5.0 5.25 kΩ
3375 K
Module
Symbol Conditions Maximum Ratings T
VJ
T
JM
T
stg
V
ISOL
M
d
Operating -40...+125 °C
150 °C
-40...+125 °C
≤ 1 mA; 50/60 Hz 2500 V~
ISOL
Mounting torque (M5) 2.7 - 3.3 Nm
Symbol Conditions Characteristic Values
min. typ. max.
R
pin-chip
d
S
d
A
R
thCH
Creepage distance on surface 6 mm Strike distance in air 6 mm
with heatsink compound 0.02 K/W
5mΩ
Weight 180 g
Dimensions in mm (1 mm = 0.0394")
© 2001 IXYS All rights reserved
4 - 8
Page 5
Input Rectifier Bridge D11 - D16
120
A
100
I
F
80
60
40
20
TVJ= 125°C T
= 25°C
VJ
I
200
160
FSM
120
50Hz, 80% V
A
80
40
RRM
TVJ= 45°C
TVJ= 125°C
MUBW 50-06 A7
3
10
2
s
TVJ= 45°C
TVJ= 125°C
A
I2t
0
0.0 0.5 1.0 1.5 2.0 2.5
V
V
F
Fig. 1 Forward current versus voltage
0
0.001 0.01 0.1 1
s
t
Fig. 2 Surge overload current Fig. 3 I
drop per diode
800
W
600
P
tot
R
:
thA
0.05 K/W
0.15 K/W
400
0.3 K/W
0.5 K/W 1 K/W 2 K/W 5 K/W
200
0
04080120
I
d(AV)M
A
0 20 40 60 80 100 120 140
T
°C °C
amb
Fig. 4 Power dissipation versus direct output current and ambient temperature, sin 180°
1.2
K/W
1.0
Z
thJC
0.8
2
10
23456789110
t
2
t versus time per diode
100
A
80
I
d(AV)
60
40
20
0
0 20406080100120140
T
C
Fig. 5 Max. forward current versus
case temperature
ms
0.6
0.4
0.2
0.0
0.001 0.01 0.1 1 10
Fig. 6 Transient thermal impedance junction to case
DWFN21-16
s
t
© 2001 IXYS All rights reserved
5 - 8
Page 6
Output Inverter T1 - T6 / D1 - D6
MUBW 50-06 A7
150
A
120
I
C
VGE= 17V
15V 13V
90
60
30
TVJ = 25°C
0
0123456
V
CE
11V
9V
V
150
A
120
I
C
90
VGE= 17V
15V 13V
60
30
0
0123456
Fig. 7 Typ. output characteristics Fig. 8 Typ. output characteristics
150
A
120
I
C
90
60
TVJ = 125°C
TVJ = 25°C
30
0
4 6 8 10121416
V
GE
VCE = 20V
V
90
75
A
I
F
60
45
30
15
0
0.0 0.5 1.0 1.5 2.0
Fig. 9 Typ. transfer characteristics Fig. 10 Typ. forward characteristics of
free wheeling diode
V
CE
V
F
11V
9V
TVJ = 125°C
V
TVJ = 25°CTVJ = 125°C
V
20
50
#
V
40
A
30
t
rr
15
V
GE
I
RM
 
'
10
$
!
5
VCE = 300V IC = 50A
0
04080120160
nC
Q
G
20
TVJ = 125°C
= 300V
V
10
I
RM
0
0 200 400 600 800 1000
R
IF = 30A
MUBW5006A7
A/µs
-di/dt
Fig. 11 Typ. turn on gate charge Fig. 12 Typ. turn off characteristics of
free wheeling diode
© 2001 IXYS All rights reserved
ns
6 - 8
t
rr
Page 7
Output Inverter T1 - T6 / D1 - D6
MUBW 50-06 A7
10.0
mJ
7.5
E
on
5.0
VCE = 300V
= ±15V
V
GE
R
= 22
I
C
G
= 125°C
T
VJ
A
2.5
E
on
0.0 04080120
J
J
d(on)
r
100
ns
75
t
50
Ω
25
4
mJ
3
E
off
2
1
VCE = 300V
= ±15V
V
GE
R
= 22
G
= 125°C
T
VJ
J
0
0
04080120
A
I
C
J
E
d(off)
f
400
ns
off
300
t
200
Ω
100
0
Fig. 13 Typ. turn on energy and switching Fig. 14 Typ. turn off energy and switching
times versus collector current times versus collector current
E
d(off)
J
600
ns
off
400
t
200
f
0
Ω
4
J
mJ
E
E
3
on
on
J
d(on)
r
80
ns
60
3
mJ
E
t
off
2
J
2
V
= 300V
CE
= ±15V
V
GE
1
IC = 50A
= 125°C
T
VJ
0
0 102030405060
R
G
40
1
20
0
Ω
0
0 102030405060
R
G
V
= 300V
CE
= ±15V
V
GE
= 50A
I
C
TVJ = 125°C
Fig. 15 Typ. turn on energy and switching Fig.16 Typ. turn off energy and switching
times versus gate resistor times versus gate resistor
Z
thJC
10
K/W
1
diode
IGBT
120
A
90
I
CM
0.1
60
0.01
30
RG = 22
Ω
= 125°C
T
VJ
0
0 100 200 300 400 500 600 700
V
CE
0.001
0.0001
V
0.00001 0.0001 0.001 0.01 0.1 1 10
single pulse
MUBW5006A7
s
t
Fig. 17 Reverse biased safe operating area Fig. 18 Typ. transient thermal impedance
RBSOA
© 2001 IXYS All rights reserved
7 - 8
Page 8
Brake Chopper T7 / D7
MUBW 50-06 A7
60
A
50
I
C
40
TVJ = 25°C
T
= 125°C
VJ
30
20
A
I
15
F
TVJ = 125°C
TVJ = 25°C
10
20
5
10
VGE = 15V
0
0123456
V
CE
V
0
0123
V
F
V
Fig. 19 Typ. output characteristics Fig. 20 Typ. forward characteristics of
free wheeling diode
2.0
J
d(off)
mJ
E
off
1.5
1.0
0.5
0.0
E
off
J
f
VCE = 300V
= ±15V
V
GE
R
= 47
G
TVJ = 125°C
0 1020304050
I
C
400
ns
300
t
200
Ω
100
0
A
1.0
mJ
0.8
E
off
E
J
off
d(off)
0.6
0.4
0.2
J
0.0
f
0 20 40 60 80 100 120
VCE = 300V
= ±15V
V
GE
IC = 25A
= 125°C
T
VJ
R
G
500 ns 400
t
300
200
100
0
Ω
Fig. 21 Typ. turn off energy and switching Fig. 22 Typ. turn off energy and switching
times versus collector current times versus gate resistor
10
K/W
1
Z
thJC
0.1
0.01
0.001
single pulse
0.0001
0.00001 0.0001 0.001 0.01 0.1 1 10 t
diode
IGBT
s
10000
R
Temperature Sensor NTC
Ω
1000
100
0 25 50 75 100 125 150
T
MUBW5006A7
°C
Fig. 23 Typ. transient thermal impedance Fig. 24 Typ. thermistorresistance versus
temperature
© 2001 IXYS All rights reserved
8 - 8
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