Datasheet MUBW35-12E7 Datasheet (IXYS)

Page 1
Advanced Technical Information
Converter - Brake - Inverter Module (CBI2)
3
NPT
-IGBT
22
21
MUBW 35-12 E7
D11 D13 D15
123
D12 D14 D16
23 24
14
D7
T7
16 15
11 10
7
D1
T1
18 17
65
D2
T2 T4 T6
12
T3
D3
D4
20 19
13
T5
D5
D6
NTC
8
4
9
Three Phase Brake Chopper Three Phase
Rectifier Inverter
V
= 1600 V V
RRM
I
= 42 A I
FAVM
I
= 300 A V
FSM
Input Rectifier Bridge D11 - D16
RRM
I
FAV
I
DAVM
I
FSM
P
tot
TC = 80°C; sine 180° 30 A TC = 80°C; rectangular; d = 1/ TVJ = 25°C; t = 10 ms; sine 50 Hz 300 A
TC = 25°C 10 0 W
Symbol Conditions Characteristic Values
V
F
I
R
IF = 35 A; TVJ = 25°C 1.2 1.4 V
TVJ = 125°C 1.2 V
VR = V
TVJ = 125°C 0.4 mA
CES
C25
CE(sat)
= 1200 V V = 35 A I = 2.3 V V
CES
C25
CE(sat)
= 1200 V = 52 A = 2.2 V
1600 V
bridge 80 A
3;
(T
= 25°C, unless otherwise specified)
VJ
TVJ = 25°C 0.02 mA
RRM;
min. typ. max.
Application: AC motor drives with
• Input from single or three phase grid
• Three phase synchronous or
• asynchronous motor
• electric braking operation
Features
• High level of integration - only one power semiconductor module required for the whole drive
• Inverter with NPT3 IGBTs
- low saturation voltage
- positive temperature coefficient
- fast switching
- short tail current
• Epitaxial free wheeling diodes with Hiperfast and soft reverse recovery
• Industry standard package with insulated copper base plate and soldering pins for PCB mounting
• Temperature sense included
R
thJC
IXYS reserves the right to change limits, test conditions and dimensions.
(per diode) 1.3 K/W
228
1 - 4© 2002 IXYS All rights reserved
Page 2
Advanced Technical Information
MUBW 35-12 E7
Output Inverter T1 - T6
CES
V
GES
I
C25
I
C80
I
CM
V
CEK
t
SC
(SCSOA) non-repetitive P
tot
TVJ = 25°C to 150°C 1200 V Continuous
±
20 V
TC = 25°C 52 A TC = 80°C 36 A
RBSOA; VGE = ±15 V; RG = 39 Ω; TVJ = 125°C 50 A Clamped inductive load; L = 100 µH
V
= 900 V; VGE = ±15 V; RG = 39 ; TVJ = 125°C 10 µs
CE
VCES
TC = 25°C 225 W
Symbol Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
V
V I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E E
C Q
R
CE(sat)
GE(th)
on off
ies
Gon
thJC
VJ
IC = 35 A; VGE = 15 V; TVJ = 25°C 2.2 2.8 V
TVJ = 125°C 2.5 V IC = 1 mA; VGE = V V
= V
CE
CES; VGE
CE
= 0 V; TVJ = 25°C 0.4 mA
TVJ = 125°C 0.4 mA
VCE = 0 V; VGE = ± 20 V 200 nA
Inductive load, TVJ = 125°C VCE = 600 V; IC = 35 A VGE = ±15 V; RG = 39
VCE = 25 V; VGE = 0 V; f = 1 MHz 2 nF V
= 600V; VGE = 15 V; IC = 35 A 250 nC
CE
(per IGBT) 0.55 K/W
min. typ. max.
4.5 6.5 V
150 ns
60 ns
700 ns
50 ns
4.2 mJ
3.5 mJ
Equivalent Circuits for Simulation
Conduction
D11 - D16
Rectifier Diode (typ. at TJ = 125°C)
T1 - T6 / D1 - D6
IGBT (typ. at VGE = 15 V; TJ = 125°C)
Free Wheeling Diode (typ. at TJ = 125°C)
T7 / D7
IGBT (typ. at VGE = 15 V; TJ = 125°C)
Free Wheeling Diode (typ. at TJ = 125°C)
Thermal Response
D11 - D16
Rectifier Diode (typ.)
V0 = 0.83 V; R0 = 11 m
V0 = 0.95 V; R0 = 45 m
V0 = 1.26V; R0 = 15 m
V0 = 1.37 V; R0 = 62 m
V0 = 1.39 V; R0 = 56 m
C
= 0.106 J/K; R
th1
C
= 0.79 J/K; R
th2
th2
= 1.06 K/W
th1
= 0.239 K/W
Output Inverter D1 - D6
F25
I
F80
TC = 25°C 50 A TC = 80°C 33 A
Symbol Conditions Characteristic Values
min. typ. max.
V
F
I
RM
t
rr
R
thJC
IF = 35 A; VGE = 0 V; TVJ = 25°C 2.8 V
TVJ = 125°C 1.8 V
IF = 30 A; diF/dt = -500 A/µs; TVJ = 125°C 27 A VR = 600 V; VGE = 0 V 150 ns
(per diode) 1.19 K/W
T1 - T6 / D1 - D6
IGBT (typ.)
C
= 0.201 J/K; R
th1
C
= 1.25 J/K; R
th2
th1
= 0.131 K/W
th2
Free Wheeling Diode (typ.)
C
= 0.116 J/K; R
th1
C
= 0.879 J/K; R
th2
th1 th2
T7 / D7
IGBT (typ.)
C
= 0.156 J/K; R
th1
C
= 1.162 J/K; R
th2
th1 th2
Free Wheeling Diode (typ.)
C
= 0.043 J/K; R
th1
C
= 0.54 J/K; R
th2
th1
= 0.462 K/W
th2
= 0.419 K/W
= 0.973 K/W = 0.217 K/W
= 0.545 K/W = 0.155 K/W
= 2.738 K/W
2 - 4© 2002 IXYS All rights reserved
Page 3
Advanced Technical Information
Brake Chopper T7
MUBW 35-12 E7
V
CES
V
GES
V
GEM
I
C25
I
C80
I
CM
V
CEK
t
SC
(SCSOA) non-repetitive P
tot
TVJ = 25°C to 150°C 1200 V Continuous
Transient
±
20 V
±
30 V
TC = 25°C 35 A TC = 80°C 25 A
RBSOA; VGE = ±15 V; RG = 82 Ω; TVJ = 125°C 35 A Clamped inductive load; L = 100 µH
V
= V
CE
; VGE = ±15 V; RG = 82 ; TVJ = 125°C 10 µs
CES
VCES
TC = 25°C 180 W
Symbol Conditions Characteristic Values
= 25°C, unless otherwise specified)
(T
V
V I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E E
C Q
R
CE(sat)
GE(th)
on off
ies
Gon
thJC
VJ
IC = 20 A; VGE = 15 V; TVJ = 25°C 2.3 3 V
TVJ = 125°C 2.6 V IC = 0.6 mA; VGE = V V
= V
CE
CES; VGE
CE
= 0 V; TVJ = 25°C 0.8 mA
TVJ = 125°C 0.8 mA
VCE = 0 V; VGE = ± 20 V 200 nA
Inductive load, TVJ = 125°C VCE = 600 V; IC = 20 A VGE = ±15 V; RG = 82
VCE = 25 V; VGE = 0 V; f = 1 MH z 1000 pF V
= 600V; VGE = 15 V; IC = 20 A 70 nC
CE
min. typ. max.
4.5 6.5 V
100 ns
75 ns
500 ns
70 ns
3.1 mJ
2.4 mJ
0.7 K/W
Brake Chopper D7
RRM
I
F25
I
F80
TVJ = 25°C to 150°C 1200 V TC = 25°C 16 A
TC = 80°C 11 A
Symbol Conditions Characteristic Values
min. typ. max.
V
F
I
R
I
RM
t
rr
R
thJC
IF = 20 A; TVJ = 25°C 3.6 V
TVJ = 125°C 2.6 V
VR = V
TVJ = 25°C 0.06 mA
RRM;
TVJ = 125°C 0.07 mA
IF = 20 A; diF/dt = -400 A/µs; TVJ = 125°C 13 A VR = 600 V 110 ns
3.2 K/W
3 - 4© 2002 IXYS All rights reserved
Page 4
Advanced Technical Information
Temperature Sensor NTC
Symbol Conditions Characteristic Values
min. typ. max.
MUBW 35-12 E7
R
25
B
25/50
T = 25°C 4.75 5.0 5.25 k
3375 K
Module
VJ
T
JM
T
stg
V
ISOL
M
d
I
1 mA; 50/60 Hz 2500 V~
ISOL
Mounting torque (M5) 2.7 - 3.3 Nm
-40...+150 °C 150 °C
-40...+125 °C
Symbol Conditions Characteristic Values
min. typ. max.
R
pin-chip
d
S
d
A
R
thCH
Creepage distance on surface 6 mm Strike distance in air 6 mm
with heatsink compound 0.02 K/W
5m
Weight 180 g
Dimensions in mm (1 mm = 0.0394")
023
4 - 4© 2002 IXYS All rights reserved
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