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MUBW35-12A7
Datasheet (IXYS)
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Datasheet MUBW35-12A7 Datasheet (IXYS)

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Page 1
Converter - Brake - Inverter Module (CBI2)
22
21
MUBW 35-12 A7
T1
T2
D1
6
D2
D11 D13 D15
23
1
D12
D14
D16
23
14
D7
7
16 15
T7
11 10
24
Three Phase Brake Chopper Three Phase Rectifier Inverter
V I
DAVM
I
FSM
RRM
= 1600V V = 44 A I = 400 A V
= 1200 V V
CES
= 35 A I
C25
= 2.3 V V
CE(sat)
CES
C25
CE(sat)
= 1200 V = 50 A = 2.6 V
T3
D3
D4
20 19
5
18 17
T4
12 13
NTC
T5
T6
D5
4
D6
8
9
Input Rectifier Bridge D11 - D16
Symbol Conditions Maximum Ratings V I
FAV
DAVM
FSM
P
RRM
tot
TC = 80°C; sine 180° 30 A TC = 80°C; rectangular; d = 1/3 29 A TVJ = 25°C; t = 10 ms; sine 50 Hz 400 A
TC = 25°C 120 W
1600 V
Symbol Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
V
t R
VJ
F
R
rr
thJC
IF = 35 A; TVJ = 25°C 1.4 1.7 V
TVJ = 125°C 1.4 V
VR = V
TVJ = 25°C 0.2 mA
RRM;
TVJ = 125°C 2.0 mA VR = 100 V; IF = 20 A; di/dt = -20 A/µs 1 µs (per diode) 1.06 K/W
min. typ. max.
Application: AC motor drives with
●
Input from single or three phase grid
●
Three phase synchronous or asynchronous motor
●
electric braking operation
Features
●
High level of integration - only one power semiconductor module required for the whole drive
●
Fast rectifier diodes for enhanced EMC behaviour
●
NPT IGBT technology with low saturation voltage, low switching losses, high RBSOA and short circuit ruggedness
●
Epitaxial free wheeling diodes with Hiperfast and soft reverse recovery
●
Industry standard package with insulated copper base plate and soldering pins for PCB mounting
●
T emperature sense included
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
031
1 - 8
Page 2
MUBW 35-12 A7
Output Inverter T1 - T6
Symbol Conditions Maximum Ratings V
CES
V
GES
V
GEM
C25
C80
RBSOA VGE = ±15 V; RG = 47 W; TVJ = 125°C I
t
SC
(SCSOA) non-repetitive P
tot
TVJ = 25°C to 150°C 1200 V Continuous
Transient
±
20 V
±
30 V
TC = 25°C 50 A TC = 80°C 35 A
= 50 A
Clamped inductive load; L = 100 µH V V
= V
CE
; VGE = ±15 V; RG = 47 W; TVJ = 125°C 10 µs
CES
CM
CEK
£ V
CES
TC = 25°C 225 W
Symbol Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
V
V I
CES
CE(sat)
GE(th)
VJ
IC = 35 A; VGE = 15 V; TVJ = 25°C 2.6 3.1 V
TVJ = 125°C 2.9 V IC = 1 mA; VGE = V V
= V
CE
CES; VGE
CE
= 0 V; TVJ = 25°C 1.1 mA
TVJ = 125°C 1 mA
min. typ. max.
4.5 6.5 V
Equivalent Circuits for Simulation
Conduction
D11 - D16
Rectifier Diode (typ. at TJ = 125°C)
V0 = 0.96 V; R0 = 13 mW
T1 - T6 / D1 - D6
IGBT (typ. at VGE = 15 V; TJ = 125°C)
V0 = 1.13 V; R0 = 50 mW
Free Wheeling Diode (typ. at TJ = 125°C)
V0 = 1.26V; R0 = 15 mW
T7 / D7
IGBT (typ. at VGE = 15 V; TJ = 125°C)
V0 = 1.37 V; R0 = 62 mW
Free Wheeling Diode (typ. at TJ = 125°C)
V0 = 1.39 V; R0 = 56 mW
Thermal Response
GES
t
d(on)
t
r
t
d(off)
t
f
E E
C Q
R
on off
ies
Gon
thJC
VCE = 0 V; VGE = ± 20 V 200 nA
100 ns
Inductive load, T
= 125°C
VJ
VCE = 600 V; IC = 35 A VGE = ±15 V; RG = 47 W
70 ns
500 ns
70 ns
5.3 mJ
3.9 mJ
VCE = 25 V; VGE = 0 V; f = 1 MHz 1650 pF V
= 600V; VGE = 15 V; IC = 35 A 120 nC
CE
(per IGBT) 0.55 K/W
Output Inverter D1 - D6
Symbol Conditions Maximum Ratings I
F25
F80
TC = 25°C 50 A TC = 80°C 33 A
Symbol Conditions Characteristic Values
min. typ. max.
V
F
RM
t
rr
R
thJC
IF = 35 A; VGE = 0 V; TVJ = 25°C 2.8 V
TVJ = 125°C 1.8 V
IF = 30 A; diF/dt = -500 A/µs; TVJ = 125°C 27 A VR = 600 V; VGE = 0 V 150 ns
(per diode) 1.19 K/W
D11 - D16
Rectifier Diode (typ.)
C
= 0.131 J/K; R
th1
C
= 0.839 J/K; R
th2
th1 th2
T1 - T6 / D1 - D6
IGBT (typ.)
C
= 0.201 J/K; R
th1
C
= 1.25 J/K; R
th2
th1
= 0.131 K/W
th2
Free Wheeling Diode (typ.)
C
= 0.116 J/K; R
th1
C
= 0.879 J/K; R
th2
th1 th2
T7 / D7
IGBT (typ.)
C
= 0.156 J/K; R
th1
C
= 1.162 J/K; R
th2
th1 th2
Free Wheeling Diode (typ.)
C
= 0.043 J/K; R
th1
C
= 0.54 J/K; R
th2
th1
= 0.462 K/W
th2
= 0.851 K/W = 0.209 K/W
= 0.419 K/W
= 0.973 K/W = 0.217 K/W
= 0.545 K/W = 0.155 K/W
= 2.738 K/W
© 2000 IXYS All rights reserved
2 - 8
Page 3
Brake Chopper T7
Symbol Conditions Maximum Ratings
MUBW 35-12 A7
V
CES
V
GES
V
GEM
C25
C80
RBSOA VGE = ±15 V; RG = 82 W; TVJ = 125°CI
t
SC
(SCSOA) non-repetitive P
tot
TVJ = 25°C to 150°C 1200 V Continuous
Transient
±
20 V
±
30 V
TC = 25°C35A TC = 80°C25A
= 35 A
Clamped inductive load; L = 100 µH V V
= V
CE
; VGE = ±15 V; RG = 82 W; TVJ = 125°C10µs
CES
CM
CEK
£ V
CES
TC = 25°C 180 W
Symbol Conditions Characteristic Values
= 25°C, unless otherwise specified)
(T
V
V I
CES
GES
t
d(on)
t
r
t
d(off)
t
f
E E
C Q
R
CE(sat)
GE(th)
on off
ies
Gon
thJC
VJ
IC = 20 A; VGE = 15 V; TVJ = 25°C2.33V
TVJ = 125°C2.6V IC = 0.6 mA; VGE = V V
= V
CE
CES; VGE
CE
= 0 V; TVJ = 25°C0.8mA
TVJ = 125°C0.8mA
VCE = 0 V; VGE = ± 20 V 200 nA
Inductive load, TVJ = 125°C VCE = 600 V; IC = 20 A VGE = ±15 V; RG = 82 W
VCE = 25 V; VGE = 0 V; f = 1 MH z 1000 pF V
= 600V; VGE = 15 V; IC = 20 A 70 nC
CE
min. typ. max.
4.5 6.5 V
100 ns
75 ns
500 ns
70 ns
3.1 mJ
2.4 mJ
0.7 K/W
Brake Chopper D7
Symbol Conditions Maximum Ratings V
RRM
F25
F80
TVJ = 25°C to 150°C 1200 V TC = 25°C16A
TC = 80°C11A
Symbol Conditions Characteristic Values
min. typ. max.
V
F
R
RM
t
rr
R
thJC
IF = 20 A; TVJ = 25°C3.6V
TVJ = 125°C2.6V
VR = V
TVJ = 25°C 0.06 mA
RRM;
TVJ = 125°C 0.07 mA
IF = 20 A; diF/dt = -400 A/µs; TVJ = 125°C13A VR = 600 V 110 ns
3.2 K/W
© 2000 IXYS All rights reserved
3 - 8
Page 4
Temperature Sensor NTC
Symbol Conditions Characteristic Values
min. typ. max.
MUBW 35-12 A7
R
25
B
25/50
T = 25°C 4.75 5.0 5.25 kW
3375 K
Module
Symbol Conditions Maximum Ratings T
VJ
T
JM
T
stg
V
ISOL
M
d
£ 1 mA; 50/60 Hz 2500 V~
ISOL
Mounting torque (M5) 2.7 - 3.3 Nm
-40...+150 °C 150 °C
-40...+125 °C
Symbol Conditions Characteristic Values
min. typ. max.
R
pin-chip
d
S
d
A
R
thCH
Creepage distance on surface 6 mm Strike distance in air 6 mm
with heatsink compound 0.02 K/W
5mW
Weight 180 g
Dimensions in mm (1 mm = 0.0394")
© 2000 IXYS All rights reserved
4 - 8
Page 5
Input Rectifier Bridge D11 - D16
120
A
100
I
F
80
60
40
20
TVJ= 125°C
= 25°C
T
VJ
I
200
160
FSM
120
50Hz, 80% V
A
80
40
RRM
TVJ= 45°C
TVJ= 125°C
MUBW 35-12 A7
3
10
2
TVJ= 45°C
s
A
I2t
TVJ= 125°C
0
0.0 0.5 1.0 1.5 2.0 2.5
V
V
F
Fig. 1 Forward current versus voltage
0
0.001 0.01 0.1 1
s
t
Fig. 2 Surge overload current Fig. 3 I
drop per diode
800
W
600
P
tot
R
:
thA
0.05 K/W
0.15 K/W
400
0.3 K/W
0.5 K/W 1 K/W 2 K/W 5 K/W
200
0
0 40 80 120
I
d(AV)M
A
0 20 40 60 80 100 120 140
T
°C °C
amb
Fig. 4 Power dissipation versus direct output current and ambient temperature, sin 180°
1.2
K/W
1.0
Z
thJC
0.8
2
10
23456789110
t
2
t versus time per diode
100
A
80
I
d(AV)
60
40
20
0
0 20 40 60 80 100 120 140
T
C
Fig. 5 Max. forward current versus
case temperature
ms
0.6
0.4
0.2
0.0
0.001 0.01 0.1 1 10
Fig. 6 Transient thermal impedance junction to case
t
© 2000 IXYS All rights reserved
DWFN21-16
s
5 - 8
Page 6
Output Inverter T1 - T6 / D1 - D6
MUBW 35-12 A7
100
VGE= 17V
A
80
I
C
15V 13V
60
40
20
TVJ = 25°C
0
01234567
V
CE
11V
9V
V
100
A
80
I
C
VGE= 17V
15V 13V
60
40
20
0
01234567
Fig. 7 Typ. output characteristics Fig. 8 Typ. output characteristics
100
A
80
I
C
60
40
T
= 125°C
VJ
TVJ = 25°C
20
0
4 6 8 10 12 14 16
V
GE
VCE = 20V
V
90
A
75
I
F
60
45
30
15
0
01234
Fig. 9 Typ. transfer characteristics Fig. 10 Typ. forward characteristics of
free wheeling diode
V
V
CE
TVJ = 25°CTVJ = 125°C
F
11V
9V
TVJ = 125°C
V
V
20
V
15
V
GE
10
5
0
0 40 80 120 160
Fig. 11 Typ. turn on gate charge Fig. 12 Typ. turn off characteristics of
© 2000 IXYS All rights reserved
VCE = 600V I
= 35A
C
Q
G
nC
50
t
rr
40
A
I
RM
30
20
10
I
RM
0
0 200 400 600 800 1000
-di/dt
free wheeling diode
TVJ = 125°C
= 600V
V
R
I
= 30A
F
MUBW3512A7
A/ms
200
160
ns
120
80
40
0
6 - 8
t
rr
Page 7
Output Inverter T1 - T6 / D1 - D6
MUBW 35-12 A7
20
mJ
15
E
on
10
t
r
5
t
d(on)
E
on
VCE = 600V V
= ±15V
GE
R
= 47
G
TVJ = 125°C
0
0 20406080
I
C
200
ns
150
t
100
W
50
0
A
6
mJ
E
off
4
E
off
2
V
= 600V
CE
= ±15V
V
GE
R
= 47
G
TVJ = 125°C
0
0 204060
A
I
C
t
t
d(off)
f
600
ns
t
400
W
200
0
Fig. 13 Typ. turn on energy and switching Fig. 14 Typ. turn off energy and switching
times versus collector current times versus collector current
8
V
= 600V
CE
mJ
V
= ±15V
GE
I
6
4
2
= 35A
C
T
VJ
E
on
t
d(on)
t
r
= 125°C
E
on
0
0 20406080100
R
G
160
ns
120
t
80
40
0
W
5
mJ
4
E
E
off
off
3
V
= 600V
2
1
CE
V
= ±15V
GE
= 35A
I
C
T
= 125°C
VJ
0
0 20406080100
R
G
1000
ns
800
t
d(off)
t
600
400
200
t
f
0
W
Fig. 15 Typ. turn on energy and switching Fig.16 Typ. turn off energy and switching
times versus gate resistor times versus gate resistor
60
A
I
CM
40
20
RG = 47
W
T
= 125°C
VJ
0
0 200 400 600 800 1000 1200 1400
Fig. 17 Reverse biased safe operating area Fig. 18 Typ. transient thermal impedance
RBSOA
© 2000 IXYS All rights reserved
10
Z
K/W
1
thJC
diode
IGBT
0.1
0.01
0.001
0.0001
V
V
CE
0.00001 0.0001 0.001 0.01 0.1 1 10
single pulse
MUBW3512A7
s
t
7 - 8
Page 8
Brake Chopper T7 / D7
MUBW 35-12 A7
50
40
A
I
C
TVJ = 25°C
= 125°C
T
VJ
30
30
25
A
I
F
20
T
= 125°C
VJ
TVJ = 25°C
15
20
10
10
VGE = 15V
0
012345
V
CE
V
5
0
01234
V
F
V
Fig. 19 Typ. output characteristics Fig. 20 Typ. forward characteristics of
free wheeling diode
t
d(off)
800
ns
600
400
t
d(off)
1000 ns 750
500
t
2.0
E
mJ
E
off
t
1.5
1.0
off
VCE = 600V
= ±15V
V
GE
I
= 20A
C
T
= 125°C
VJ
4
VCE = 600V
mJ
V
= ±15V
GE
R
= 82
E
off
3
W
G
TVJ = 125°C
2
1
E
off
0
0 5 10 15 20 25 30 35
I
C
Fig. 21 Typ. turn off energy and switching Fig. 22 Typ. turn off energy and switching
times versus collector current times versus gate resistor
10
K/W
1
Z
thJC
0.1
0.01
0.001
single pulse
0.0001
0.00001 0.0001 0.001 0.01 0.1 1 10 t
Fig. 23 Typ. transient thermal impedance Fig. 24 Typ. thermistorresistance versus
t
f
A
diode
IGBT
s
200
0
R
0.5
0.0
0 20 40 60 80 100 120 140
Temperature Sensor NTC
10000
W
1000
100
0 25 50 75 100 125 150
temperature
250
t
f
0
W
R
G
MUBW3512A7
°C
T
© 2000 IXYS All rights reserved
8 - 8
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