How it Works
Datasheet
Loading...
MUBW25-12A7
Datasheet (IXYS)
8 pgs196.95 Kb0

Datasheet MUBW25-12A7 Datasheet (IXYS)

Download
Page 1
Converter - Brake - Inverter Module (CBI2)
22
21
MUBW 25-12 A7
T1
T2
D1
6
D2
D11 D13 D15
23
1
D12
D14
D16
23
14
7
D7
16 15
T7
11 10
24
Three Phase Brake Chopper Three Phase Rectifier Inverter
V I
DAVM
I
FSM
RRM
= 1600V V = 36 A I = 300 A V
= 1200 V V
CES
= 20 A I
C25
= 2.9 V V
CE(sat)
CES
C25
CE(sat)
= 1200 V = 50 A = 2.2 V
T3
D3
D4
20 19
5
18 17
T4
12 13
NTC
T5
T6
D5
4
D6
8
9
Input Rectifier Bridge D11 - D16
Symbol Conditions Maximum Ratings V I
FAV
DAVM
FSM
P
RRM
tot
TC = 80°C; sine 180° 25 A TC = 80°C; rectangular; d = 1/3 24 A TVJ = 25°C; t = 10 ms; sine 50 Hz 300 A
TC = 25°C 100 W
1600 V
Symbol Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
V
t R
VJ
F
R
rr
thJC
IF = 25 A; TVJ = 25°C 1.4 1.7 V
TVJ = 125°C 1.4 V
VR = V
TVJ = 25°C 0.15 mA
RRM;
TVJ = 125°C 1.2 mA
VR = 100 V; IF = 15 A; di/dt = -15 A/µs 1 µs
(per diode) 1.3 K/W
min. typ. max.
Application: AC motor drives with
●
Input from single or three phase grid
●
Three phase synchronous or asynchronous motor
●
electric braking operation
Features
●
High level of integration - only one power semiconductor module required for the whole drive
●
Fast rectifier diodes for enhanced EMC behaviour
●
NPT IGBT technology with low saturation voltage, low switching losses, high RBSOA and short circuit ruggedness
●
Epitaxial free wheeling diodes with Hiperfast and soft reverse recovery
●
Industry standard package with insulated copper base plate and soldering pins for PCB mounting
●
Temperature sense included
IXYS reserves the right to change limits, test conditions and dimensions.
© 2001 IXYS All rights reserved
105
1 - 8
Page 2
MUBW 25-12 A7
Output Inverter T1 - T6
Symbol Conditions Maximum Ratings V
CES
V
GES
V
GEM
C25
C80
RBSOA VGE = ±15 V; RG = 47 Ω; TVJ = 125°CI
t
SC
(SCSOA) non-repetitive P
tot
TVJ = 25°C to 150°C 1200 V
Continuous Transient
±
20 V
±
30 V
TC = 25°C50A TC = 80°C35A
= 50 A
Clamped inductive load; L = 100 µH V
V
= V
CE
; VGE = ±15 V; RG = 47 Ω; TVJ = 125°C10µs
CES
CM
CEK
≤ V
CES
TC = 25°C 225 W
Symbol Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
V
V I
CES
CE(sat)
GE(th)
VJ
IC = 25 A; VGE = 15 V; TVJ = 25°C 2.2 2.7 V
TVJ = 125°C 2.5 V
IC = 1 mA; VGE = V
V
= V
CE
CES; VGE
CE
= 0 V; TVJ = 25°C 0.9 mA
TVJ = 125°C 0.9 mA
min. typ. max.
4.5 6.5 V
Equivalent Circuits for Simulation
Conduction
D11 - D16
Rectifier Diode (typ. at TJ = 125°C)
T1 - T6 / D1 - D6
IGBT (typ. at VGE = 15 V; TJ = 125°C)
Free Wheeling Diode (typ. at TJ = 125°C)
T7 / D7
IGBT (typ. at VGE = 15 V; TJ = 125°C)
Free Wheeling Diode (typ. at TJ = 125°C)
Thermal Response
V0 = 1.16 V; R0 = 9 m
V0 = 1.38 V; R0 = 46 m
V0 = 1.32 V; R0 = 30 m
V0 = 1.32 V; R0 = 131 m
V0 = 1.39 V; R0 = 56 m
Ω
Ω
Ω
Ω
Ω
GES
t
d(on)
t
r
t
d(off)
t
f
E E
C Q
R
on off
ies
Gon
thJC
VCE = 0 V; VGE = ± 20 V 200 nA
100 ns
Inductive load, T
= 125°C
VJ
VCE = 600 V; IC = 25 A VGE = ±15 V; RG = 47 Ω
70 ns
500 ns
70 ns
2.8 mJ
3.8 mJ
VCE = 25 V; VGE = 0 V; f = 1 MHz 1650 pF V
= 600V; VGE = 15 V; IC = 25 A 120 nC
CE
(per IGBT) 0.55 K/W
Output Inverter D1 - D6
Symbol Conditions Maximum Ratings I
F25
F80
TC = 25°C28A TC = 80°C18A
Symbol Conditions Characteristic Values
min. typ. max.
V
F
RM
t
rr
R
thJC
IF = 15 A; VGE = 0 V; TVJ = 25°C 3.1 V
TVJ = 125°C 2.1 V
IF = 25 A; diF/dt = -400A/µs; TVJ = 125°C16A VR = 600 V; VGE = 0 V 130 ns
(per diode) 2.1 K/W
D11 - D16
Rectifier Diode (typ.)
C
= 0.106 J/K; R
th1
C
= 0.79 J/K; R
th2
th1
= 0.239 K/W
th2
T1 - T6 / D1 - D6
IGBT (typ.)
C
= 0.201 J/K; R
th1
C
= 1.25 J/K; R
th2
th1
= 0.131 K/W
th2
Free Wheeling Diode (typ.)
C
= 0.065 J/K; R
th1
C
= 0.639 J/K; R
th2
th1
th2
T7 / D7
IGBT (typ.)
C
= 0.09 J/K; R
th1
C
= 0.809 J/K; R
th2
= 0.954 K/W
th1
th2
Free Wheeling Diode (typ.)
C
= 0.043 J/K; R
th1
C
= 0.54 J/K; R
th2
th1
= 0.462 K/W
th2
= 1.06 K/W
= 0.419 K/W
= 1.758 K/W = 0.342 K/W
= 0.246 K/W
= 2.738 K/W
© 2001 IXYS All rights reserved
2 - 8
Page 3
Brake Chopper T7
Symbol Conditions Maximum Ratings
MUBW 25-12 A7
V
CES
V
GES
V
GEM
C25
C80
RBSOA VGE = ±15 V; RG = 82 Ω; TVJ = 125°CI
t
SC
(SCSOA) non-repetitive P
tot
TVJ = 25°C to 150°C 1200 V
Continuous Transient
±
20 V
±
30 V
TC = 25°C20A TC = 80°C15A
= 20 A
Clamped inductive load; L = 100 µH V
V
= 720 V; VGE = ±15 V; RG = 82 Ω; TVJ = 125°C10µs
CE
CM
CEK
≤ V
CES
TC = 25°C 105 W
Symbol Conditions Characteristic Values
= 25°C, unless otherwise specified)
(T
V
V I
CES
GES
t
d(on)
t
r
t
d(off)
t
f
E E
C Q
R
CE(sat)
GE(th)
on off
ies
Gon
thJC
VJ
IC = 15 A; VGE = 15 V; TVJ = 25°C 2.9 3.3 V
TVJ = 125°C 3.3 V
IC = 0.4 mA; VGE = V
V
= V
CE
CES; VGE
CE
= 0 V; TVJ = 25°C 0.5 mA
TVJ = 125°C 0.3 mA
VCE = 0 V; VGE = ± 20 V 200 nA
Inductive load, TVJ = 125°C VCE = 600 V; IC = 15 A VGE = ±15 V; RG = 82 Ω
VCE = 25 V; VGE = 0 V; f = 1 MH z 600 pF V
= 600 V; VGE = 15 V; IC = 15 A 45 nC
CE
min. typ. max.
4.5 6.5 V
50 ns 40 ns
290 ns
60 ns
1.8 mJ
1.6 mJ
1.2 K/W
Brake Chopper D7
Symbol Conditions Maximum Ratings V
RRM
F25
F80
TVJ = 25°C to 150°C 1200 V
TC = 25°C17A TC = 80°C11A
Symbol Conditions Characteristic Values
min. typ. max.
V
F
R
RM
t
rr
R
thJC
IF = 15 A; TVJ = 25°C 3.2 V
TVJ = 125°C 2.3 V
VR = V
TVJ = 25°C 0.06 mA
RRM;
TVJ = 125°C 0.07 mA
IF = 10 A; diF/dt = -400 A/µs; TVJ = 125°C13A VR = 600 V 110 ns
3.2 K/W
© 2001 IXYS All rights reserved
3 - 8
Page 4
Temperature Sensor NTC
Symbol Conditions Characteristic Values
min. typ. max.
MUBW 25-12 A7
R
25
B
25/50
T = 25°C 4.75 5.0 5.25 kΩ
3375 K
Module
Symbol Conditions Maximum Ratings T
VJ
T
JM
T
stg
V
ISOL
M
d
Operating -40...+125 °C
150 °C
-40...+125 °C
≤ 1 mA; 50/60 Hz 2500 V~
ISOL
Mounting torque (M5) 2.7 - 3.3 Nm
Symbol Conditions Characteristic Values
min. typ. max.
R
pin-chip
d
S
d
A
R
thCH
Creepage distance on surface 6 mm Strike distance in air 6 mm
with heatsink compound 0.02 K/W
5mΩ
Weight 180 g
Dimensions in mm (1 mm = 0.0394")
© 2001 IXYS All rights reserved
4 - 8
Page 5
Input Rectifier Bridge D11 - D16
50
A
40
I
F
30
20
TVJ= 125°C T
= 25°C
VJ
I
FSM
100
50Hz, 80% V
A
80
60
40
RRM
TVJ= 45°C
TVJ= 150°C
MUBW 25-12 A7
3
10
2
A
s
I2t
TVJ= 45°C
TVJ= 150°C
10
2
10
0
0.0 0.4 0.8 1.2 1.6 2.0
V
V
F
Fig. 1 Forward current versus voltage
20
0
0.001 0.01 0.1 1
s
t
Fig. 2 Surge overload current Fig. 3 I
drop per diode
500
W
400
R
P
tot
300
:
thA
0.05 K/W
0.15 K/W
0.3 K/W
0.5 K/W 1 K/W
200
2 K/W 5 K/W
100
0
0 20406080
I
d(AV)M
0 20406080100120140
A
T
amb
°C °C
Fig. 4 Power dissipation versus direct output current and ambient temperature, sin 180°
1.6
1
10
23456789110
t
2
t versus time per diode
60
A
50
I
d(AV)
40
30
20
10
0
0 20406080100120140
T
C
Fig. 5 Max. forward current versus
case temperature
ms
K/W
1.2
Z
thJC
0.8
0.4
0.0
0.001 0.01 0.1 1 10
Fig. 6 Transient thermal impedance junction to case
DWFN9-16
s
t
© 2001 IXYS All rights reserved
5 - 8
Page 6
Output Inverter T1 - T6 / D1 - D6
MUBW 25-12 A7
80
A
I
60
C
V
= 17V
GE
15V 13V
40
20
TVJ = 25°C
0
01234567
V
CE
11V
9V
V
80
V
= 17V
A
I
60
C
GE
15V 13V
40
20
0
01234567
Fig. 7 Typ. output characteristics Fig. 8 Typ. output characteristics
80
A
60
I
C
40
50
40
A
I
F
30
20
V
CE
11V
9V
TVJ = 125°C
V
TVJ = 25°CTVJ = 125°C
20
= 125°C
T
VJ
TVJ = 25°C
VCE = 20V
0
4 6 8 10121416
V
GE
V
10
0
01234
Fig. 9 Typ. transfer characteristics Fig. 10 Typ. forward characteristics of
free wheeling diode
20
V
15
V
GE
10
5
VCE = 600V
= 25A
I
C
0
04080120160
nC
Q
G
50
t
rr
40
A
I
RM
30
20
10
I
RM
0
0 200 400 600 800 1000
V
F
-di/dt
V
TVJ = 125°C VR = 600V
= 15A
I
F
MUBW2512A7
A/µs

$
ns
 
&
"
t
rr
Fig. 11 Typ. turn on gate charge Fig. 12 Typ. turn off characteristics of
free wheeling diode
© 2001 IXYS All rights reserved
6 - 8
Page 7
Output Inverter T1 - T6 / D1 - D6
MUBW 25-12 A7
15
VCE = 600V
= ±15V
V
GE
mJ
R
= 47
Ω
G
= 125°C
10
T
VJ
J
d(on)
J
5
r
E
on
E
on
0
0204060
A
I
C
150
ns
100
50
0
12
mJ
V
= 600V
8
CE
VGE = ±15V R
= 47
G
= 125°C
T
VJ
Ω
E
off
E
t
off
4
0
0204060
A
I
C
J
J
d(off)
f
600
ns
400
200
0
t
Fig. 13 Typ. turn on energy and switching Fig. 14 Typ. turn off energy and switching
times versus collector current times versus collector current
4
mJ
E
3
on
E
on
2
V
= 600V
1
CE
= ±15V
V
GE
= 25A
I
C
TVJ = 125°C
0
0 20406080100
R
G
J
Ω
d(on)
J
160
ns
120
t
r
80
40
0
8
mJ
E
off
6
4
2
V
= 600V
CE
= ±15V
V
GE
IC = 25
= 125°C
T
VJ
0
0 20406080100
R
G
800
J
d(off)
ns
600
E
off
t
400
200
J
f
0
Ω
Fig. 15 Typ. turn on energy and switching Fig.16 Typ. turn off energy and switching
times versus gate resistor times versus gate resistor
Z
thJC
10
K/W
diode
1
IGBT
60
A
I
CM
40
0.1
0.01
20
single pulse
MUBW2512A7
s
t
RG = 47
Ω
= 125°C
T
VJ
0
0 200 400 600 800 1000 1200 1400
V
CE
0.001
0.0001
V
0.00001 0.0001 0.001 0.01 0.1 1 10
Fig. 17 Reverse biased safe operating area Fig. 18 Typ. transient thermal impedance
RBSOA
© 2001 IXYS All rights reserved
7 - 8
Page 8
Brake Chopper T7 / D7
MUBW 25-12 A7
30
A
25
I
C
20
TVJ = 25°C
TVJ = 125°C
15
10
5
VGE = 15V
0
0123456
V
CE
V
30
A
25
I
F
20
= 125°C
T
VJ
TVJ = 25°C
15
10
5
0
01234
V
F
V
Fig. 19 Typ. output characteristics Fig. 20 Typ. forward characteristics of
free wheeling diode
2.5
VCE = 600V
mJ
VGE = ±15V
2.0
R
= 82
E
off
1.5
1.0
G
= 125°C
T
VJ
Ω
J
d(off)
E
off
500
ns
400
300
200
1.2
E
mJ
E
t
off
0.8
off
VCE = 600V VGE = ±15V
= 15A
I
C
TVJ = 125°C
0.4
J
d(off)
600
ns
400
200
t
0.5
0.0 0 4 8 121620
I
C
Fig. 21 Typ. turn off energy and switching Fig. 22 Typ. turn off energy and switching
times versus collector current times versus gate resistor
10
K/W
1
Z
thJC
0.1
0.01
0.001
single pulse
0.0001
0.00001 0.0001 0.001 0.01 0.1 1 10 t
Fig. 23 Typ. transient thermal impedance Fig. 24 Typ. thermistorresistance versus
J
f
A
diode
IGBT
s
100
0
10000
R
0.0
0 20 40 60 80 100 120 140
R
Temperature Sensor NTC
Ω
1000
100
0 25 50 75 100 125 150
T
temperature
G
J
f
Ω
MUBW2512A7
°C
0
© 2001 IXYS All rights reserved
8 - 8
Loading...
Buy Points How it Works FAQ Contact Us Questions and Suggestions Privacy Policy Cookie Policy Terms of Use