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MUBW20-06A7
Datasheet (IXYS)
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Datasheet MUBW20-06A7 Datasheet (IXYS)

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Page 1
Converter - Brake - Inverter Module (CBI2)
22
21
MUBW 20-06 A7
T1
T2
D1
6
D2
D11 D13 D15
23
1
D12
D14
D16
23
14
7
D7
16 15
T7
11 10
24
Three Phase Brake Chopper Three Phase Rectifier Inverter
V I
DAVM
I
FSM
RRM
= 1600V V = 36 A I = 300 A V
= 600 V V
CES
= 25 A I
C25
= 1.9 V V
CE(sat)
CES
C25
CE(sat)
= 600 V = 35 A = 1.9 V
T3
D3
D4
20 19
5
18 17
T4
12 13
NTC
T5
T6
D5
4
D6
8
9
Input Rectifier Bridge D11 - D16
Symbol Conditions Maximum Ratings V I
FAV
DAVM
FSM
P
RRM
tot
TC = 80°C; sine 180° 25 A TC = 80°C; rectangular; d = 1/3 24 A TVJ = 25°C; t = 10 ms; sine 50 Hz 300 A
TC = 25°C 100 W
1600 V
Symbol Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
V
t R
VJ
F
R
rr
thJC
IF = 20 A; TVJ = 25°C 1.4 1.6 V
TVJ = 125°C 1.3 V
VR = V
TVJ = 25°C 0.15 mA
RRM;
TVJ = 125°C 1.2 mA
VR = 100 V; IF = 15 A; di/dt = -15 A/µs 1 µs
(per diode) 1.3 K/W
min. typ. max.
Application: AC motor drives with
●
Input from single or three phase grid
●
Three phase synchronous or asynchronous motor
●
electric braking operation
Features
●
High level of integration - only one power semiconductor module required for the whole drive
●
Fast rectifier diodes for enhanced EMC behaviour
●
NPT IGBT technology with low saturation voltage, low switching losses, high RBSOA and short circuit ruggedness
●
Epitaxial free wheeling diodes with Hiperfast and soft reverse recovery
●
Industry standard package with insulated copper base plate and soldering pins for PCB mounting
●
Temperature sense included
IXYS reserves the right to change limits, test conditions and dimensions.
© 2001 IXYS All rights reserved
105
1 - 8
Page 2
MUBW 20-06 A7
Output Inverter T1 - T6
Symbol Conditions Maximum Ratings V
CES
V
GES
V
GEM
C25
C80
RBSOA VGE = ±15 V; RG = 47 Ω; TVJ = 125°CI
t
SC
(SCSOA) non-repetitive P
tot
TVJ = 25°C to 150°C 600 V
Continuous Transient
±
20 V
±
30 V
TC = 25°C35A TC = 80°C25A
= 40 A
Clamped inductive load; L = 100 µH V
V
= V
CE
; VGE = ±15 V; RG = 47 Ω; TVJ = 125°C10µs
CES
CM
CEK
≤ V
CES
TC = 25°C 125 W
Symbol Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
V
V I
CES
CE(sat)
GE(th)
VJ
IC = 20 A; VGE = 15 V; TVJ = 25°C 1.9 2.3 V
TVJ = 125°C 2.2 V
IC = 0.5 mA; VGE = V
V
= V
CE
CES; VGE
CE
= 0 V; TVJ = 25°C 0.6 mA
TVJ = 125°C 0.4 mA
min. typ. max.
4.5 6.5 V
Equivalent Circuits for Simulation
Conduction
D11 - D16
Rectifier Diode (typ. at TJ = 125°C)
T1 - T6 / D1 - D6
IGBT (typ. at VGE = 15 V; TJ = 125°C)
Free Wheeling Diode (typ. at TJ = 125°C)
T7 / D7
IGBT (typ. at VGE = 15 V; TJ = 125°C)
Free Wheeling Diode (typ. at TJ = 125°C)
Thermal Response
V0 = 1.12V; R0 = 0.11 m
V0 = 0.9 V; R0 = 65 m
V0 = 1.09 V; R0 = 12 m
V0 = 0.99 V; R0 = 81 m
V0 = 1.07 V; R0 = 23 m
Ω
Ω
Ω
Ω
Ω
GES
t
d(on)
t
r
t
d(off)
t
f
E E
C Q
R
on off
ies
Gon
thJC
VCE = 0 V; VGE = ± 20 V 200 nA
50 ns
Inductive load, T
= 125°C
VJ
VCE = 300 V; IC = 20 A VGE = ±15 V; RG = 47 Ω
55 ns
300 ns
30 ns
0.92 mJ
0.68 mJ
VCE = 25 V; VGE = 0 V; f = 1 MHz 1100 pF VCE= 300V; VGE = 15 V; IC = 20 A 65 nC
(per IGBT) 1 K/W
Output Inverter D1 - D6
Symbol Conditions Maximum Ratings I
F25
F80
TC = 25°C35A TC = 80°C24A
Symbol Conditions Characteristic Values
min. typ. max.
V
F
RM
t
rr
R
thJC
IF = 20 A; VGE = 0 V; TVJ = 25°C 2.1 V
TVJ = 125°C 1.4 V
IF = 15 A; diF/dt = -400 A/µs; TVJ = 125°C13A VR = 300 V; VGE = 0 V 90 ns
(per diode) 2.1 K/W
D11 - D16
Rectifier Diode (typ.)
C
= 0.106 J/K; R
th1
C
= 0.79 J/K; R
th2
th1
= 0.239 K/W
th2
T1 - T6 / D1 - D6
IGBT (typ.)
C
= 0.108 J/K; R
th1
C
= 0.921 J/K; R
th2
th1
th2
Free Wheeling Diode (typ.)
C
= 0.065 J/K; R
th1
C
= 0.636 J/K; R
th2
th1
th2
T7 / D7
IGBT (typ.)
C
= 0.077 J/K; R
th1
C
= 0.732 J/K; R
th2
th1
th2
Free Wheeling Diode (typ.)
C
= 0.043 J/K; R
th1
C
= 0.54 J/K; R
th2
th1
= 0.462 K/W
th2
= 1.06 K/W
= 0.79 K/W
= 0.209 K/W
= 1.766 K/W = 0.344 K/W
= 1.111 K/W = 0.279 K/W
= 2.738 K/W
© 2001 IXYS All rights reserved
2 - 8
Page 3
Brake Chopper T7
Symbol Conditions Maximum Ratings
MUBW 20-06 A7
V
CES
V
GES
V
GEM
C25
C80
RBSOA VGE = ±15 V; RG = 68 Ω; TVJ = 125°CI
t
SC
(SCSOA) non-repetitive P
tot
TVJ = 25°C to 150°C 600 V
Continuous Transient
±
20 V
±
30 V
TC = 25°C25A TC = 80°C18A
= 30 A
Clamped inductive load; L = 100 µH V
V
= V
CE
; VGE = ±15 V; RG = 68 Ω; TVJ = 125°C10µs
CES
CM
CEK
≤ V
CES
TC = 25°C90W
Symbol Conditions Characteristic Values
= 25°C, unless otherwise specified)
(T
V
V I
CES
GES
t
d(on)
t
r
t
d(off)
t
f
E E
C Q
R
CE(sat)
GE(th)
on off
ies
Gon
thJC
VJ
IC = 15 A; VGE = 15 V; TVJ = 25°C 1.9 2.3 V
TVJ = 125°C 2.1 V
IC = 0.4 mA; VGE = V
V
= V
CE
CES; VGE
CE
= 0 V; TVJ = 25°C 0.5 mA
TVJ = 125°C 0.3 mA
VCE = 0 V; VGE = ± 20 V 200 nA
Inductive load, TVJ = 125°C VCE = 300 V; IC = 15 A VGE = ±15 V; RG = 68 Ω
VCE = 25 V; VGE = 0 V; f = 1 MH z 800 pF VCE= 300 V; VGE = 15 V; IC = 15 A 57 nC
min. typ. max.
4.5 6.5 V
30 ns 50 ns
270 ns
40 ns
0.7 mJ
0.5 mJ
1.39 K/W
Brake Chopper D7
Symbol Conditions Maximum Ratings V
RRM
F25
F80
TVJ = 25°C to 150°C 600 V
TC = 25°C22A TC = 80°C15A
Symbol Conditions Characteristic Values
min. typ. max.
V
F
R
RM
t
rr
R
thJC
IF = 15 A; TVJ = 25°C 2.2 V
TVJ = 125°C 1.5 V
VR = V
TVJ = 25°C 0.06 mA
RRM;
TVJ = 125°C 0.07 mA
IF = 10 A; diF/dt = -400 A/µs; TVJ = 125°C11A VR = 300 V 80 ns
3.2 K/W
© 2001 IXYS All rights reserved
3 - 8
Page 4
Temperature Sensor NTC
Symbol Conditions Characteristic Values
min. typ. max.
MUBW 20-06 A7
R
25
B
25/50
T = 25°C 4.75 5.0 5.25 kΩ
3375 K
Module
Symbol Conditions Maximum Ratings T
VJ
T
JM
T
stg
V
ISOL
M
d
Operating -40...+125 °C
150 °C
-40...+125 °C
≤ 1 mA; 50/60 Hz 2500 V~
ISOL
Mounting torque (M5) 2.7 - 3.3 Nm
Symbol Conditions Characteristic Values
min. typ. max.
R
pin-chip
d
S
d
A
R
thCH
Creepage distance on surface 6 mm Strike distance in air 6 mm
with heatsink compound 0.02 K/W
5mΩ
Weight 180 g
Dimensions in mm (1 mm = 0.0394")
© 2001 IXYS All rights reserved
4 - 8
Page 5
Input Rectifier Bridge D11 - D16
60
A
50
I
F
40
TVJ= 125°C T
= 25°C
VJ
I
160
140
120
FSM
100
50Hz, 80% V
A
RRM
TVJ= 45°C
MUBW 20-06 A7
3
10
2
A
s
I2t
TVJ= 45°C
30
20
10
0
0.0 0.4 0.8 1.2 1.6 2.0
V
V
F
Fig. 1 Forward current versus voltage
drop per diode
600
W
500
P
tot
400
300
200
100
80
60
TVJ= 125°C
40
20
0
0.001 0.01 0.1 1
s
10
2
t
Fig. 2 Surge overload current Fig. 3 I
80
A
I
60
d(AV)
40
20
R
:
thA
0.05 K/W
0.15 K/W
0.3 K/W
0.5 K/W 1 K/W 2 K/W 5 K/W
TVJ= 125°C
23456789110
2
t versus time per diode
ms
t
0
0 20406080100120
I
d(AV)M
0 20 40 60 80 100 120 140
A
T
amb
°C °C
Fig. 4 Power dissipation versus direct output current and ambient temperature, sin 180°
0
0 20406080100120140
T
C
Fig. 5 Max. forward current versus
case temperature
1.4
K/W
1.2
1.0
Z
thJC
0.8
0.6
0.4
0.2
0.0
0.001 0.01 0.1 1 10
Fig. 6 Transient thermal impedance junction to case
DWFN17-16
s
t
© 2001 IXYS All rights reserved
5 - 8
Page 6
Output Inverter T1 - T6 / D1 - D6
MUBW 20-06 A7
60
50
A
I
C
VGE= 17V
15V 13V
40
30
20
10
TVJ = 25°C
0
0123456
V
CE
11V
9V
V
60
50
A
I
C
40
30
VGE= 17V
15V 13V
20
10
0
0123456
Fig. 7 Typ. output characteristics Fig. 8 Typ. output characteristics
60
50
A
I
C
40
30
20
TVJ = 125°C
TVJ = 25°C
10
0
4 6 8 10121416
V
GE
VCE = 20V
V
50
A
40
I
F
30
20
TVJ = 125°C
10
0
0.0 0.5 1.0 1.5 2.0 2.5
Fig. 9 Typ. transfer characteristics Fig. 10 Typ. forward characteristics of
free wheeling diode
V
V
CE
F
11V
9V
TVJ = 125°C
V
TVJ = 25°C
V
20
50
#
V
40
A
30
t
rr
15
V
GE
I
RM
 
'
10
$
!
5
VCE = 300V IC = 50A
0
0 20406080
nC
Q
G
20
TVJ = 125°C
= 300V
V
10
I
RM
0
0 200 400 600 800 1000
R
IF = 30A
MUBW2006A7
A/µs
-di/dt
Fig. 11 Typ. turn on gate charge Fig. 12 Typ. turn off characteristics of
free wheeling diode
© 2001 IXYS All rights reserved
ns
6 - 8
t
rr
Page 7
Output Inverter T1 - T6 / D1 - D6
MUBW 20-06 A7
4
VCE = 300V
mJ
E
on
= ±15V
V
GE
R
= 47
Ω
G
3
= 125°C
T
VJ
2
J
J
d(on)
r
1
E
on
0
0 10203040
I
C
80
ns
60
t
40
20
0
A
2.0
mJ
1.5
E
off
1.0
V
= 300V
CE
VGE = ±15V R
= 47
G
= 125°C
T
VJ
Ω
J
E
d(off)
off
0.5
0.0
0 10203040
I
C
400
ns
300
t
200
100
J
f
0
A
Fig. 13 Typ. turn on energy and switching Fig. 14 Typ. turn off energy and switching
times versus collector current times versus collector current
1.6
V
= 300V
CE
mJ
E
1.2
on
= ±15V
V
GE
= 20A
I
C
TVJ = 125°C
J
d(on)
J
r
0.8
E
on
80
ns
60
40
t
1.00
V
= 300V
CE
mJ
0.75
E
off
0.50
= ±15V
V
GE
IC = 20A
= 125°C
T
VJ
E
off
J
d(off)
500
ns
375
250
t
0.4
0.0 0 20406080100120
R
G
Fig. 15 Typ. turn on energy and switching Fig.16 Typ. turn off energy and switching
times versus gate resistor times versus gate resistor
50
A
40
I
CM
30
20
10
RG = 47
Ω
= 125°C
T
VJ
0
0 100 200 300 400 500 600 700
Fig. 17 Reverse biased safe operating area Fig. 18 Typ. transient thermal impedance
RBSOA
20
0
Ω
0.25
0.00 0 20406080100120
R
G
125
J
f
0
Ω
10
diode
IGBT
Z
K/W
1
thJC
0.1
0.01
0.001
0.0001
V
V
CE
0.00001 0.0001 0.001 0.01 0.1 1 10
single pulse
MUBW2006A7
s
t
© 2001 IXYS All rights reserved
7 - 8
Page 8
Brake Chopper T7 / D7
MUBW 20-06 A7
50
40
A
I
C
30
T
TVJ = 25°C
= 125°C
VJ
20
10
VGE = 15V
0
0123456
V
CE
V
20
16
A
I
F
12
= 125°C
T
VJ
TVJ = 25°C
8
4
0
0123
V
F
V
Fig. 19 Typ. output characteristics Fig. 20 Typ. forward characteristics of
free wheeling diode
J
d(off)
300
ns
200
0.8
VCE = 300V
mJ
E
off
t
0.6
0.4
= ±15V
V
GE
IC = 15A
= 125°C
T
VJ
E
off
J
d(off)
400
ns
300
200
t
1.5
mJ
1.0
VCE = 300V
= ±15V
V
GE
= 68
R
G
= 125°C
T
VJ
Ω
E
off
0.5
E
off
0.0 0 5 10 15 20 25 30 35
I
C
Fig. 21 Typ. turn off energy and switching Fig. 22 Typ. turn off energy and switching
times versus collector current times versus gate resistor
10
K/W
1
Z
thJC
0.1
0.01
0.001
single pulse
0.0001
0.00001 0.0001 0.001 0.01 0.1 1 10 t
Fig. 23 Typ. transient thermal impedance Fig. 24 Typ. thermistorresistance versus
J
f
diode
A
IGBT
s
100
0
R
0.2
0.0
0 20 40 60 80 100 120
Temperature Sensor NTC
10000
Ω
1000
100
0 25 50 75 100 125 150
T
temperature
100
J
f
0
Ω
R
G
MUBW2006A7
°C
© 2001 IXYS All rights reserved
8 - 8
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