Page 1
© 2001 IXYS All rights reserved
1 - 8
Converter - Brake - Inverter Module (CBI2)
Input Rectifier Bridge D11 - D16
Symbol Conditions Maximum Ratings
V
RRM
1600 V
I
FAV
TC = 80°C; sine 180° 19 A
I
DAVM
TC = 80°C; rectangular; d = 1/3 18 A
I
FSM
TVJ = 25°C; t = 10 ms; sine 50 Hz 160 A
P
tot
TC = 25°C85W
Symbol Conditions Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min. typ. max.
V
F
IF = 15 A; TVJ = 25°C 1.4 1.6 V
TVJ = 125°C 1.4 V
I
R
VR = V
RRM;
TVJ = 25°C 0.1 mA
TVJ = 125°C1mA
t
rr
VR = 100 V; IF = 10 A; di/dt = -10 A/µs 1 µs
R
thJC
(per diode) 1.47 K/W
Three Phase Brake Chopper Three Phase
Rectifier Inverter
V
RRM
= 1600V V
CES
= 600 V V
CES
= 600 V
I
DAVM
= 26 A I
C25
= 20 A I
C25
= 25 A
I
FSM
= 160 A V
CE(sat)
= 1.9 V V
CE(sat)
= 1.9 V
105
MUBW 15-06 A7
IXYS reserves the right to change limits, test conditions and dimensions.
NTC
D11 D13 D15
D12
D14
D16
1
23
D7
T7
T1
D1
T3
D3
T2
T4
T6
T5
D4
D2
D6
D5
21
22
7
6
4
5
16
15
18
17
20
19
11
10
23
24
14
8
9
12 13
Application: AC motor drives with
●
Input from single or three phase grid
●
Three phase synchronous or
asynchronous motor
●
electric braking operation
Features
●
High level of integration - only one power
semiconductor module required for the
whole drive
●
Fast rectifier diodes for enhanced EMC
behaviour
●
NPT IGBT technology with low
saturation voltage, low switching
losses, high RBSOA and short circuit
ruggedness
●
Epitaxial free wheeling diodes with
Hiperfast and soft reverse recovery
●
Industry standard package with insulated
copper base plate and soldering pins for
PCB mounting
●
Temperature sense included
Page 2
© 2001 IXYS All rights reserved
2 - 8
MUBW 15-06 A7
Output Inverter T1 - T6
Symbol Conditions Maximum Ratings
V
CES
TVJ = 25°C to 150°C 600 V
V
GES
Continuous
±
20 V
V
GEM
Transient
±
30 V
I
C25
TC = 25°C25A
I
C80
TC = 80°C18A
RBSOA VGE = ±15 V; RG = 68 Ω; TVJ = 125°CI
CM
= 30 A
Clamped inductive load; L = 100 µH V
CEK
≤ V
CES
t
SC
V
CE
= V
CES
; VGE = ±15 V; RG = 68 Ω; TVJ = 125°C10µs
(SCSOA) non-repetitive
P
tot
TC = 25°C 100 W
Symbol Conditions Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min. typ. max.
V
CE(sat)
IC = 15 A; VGE = 15 V; TVJ = 25°C 1.9 2.3 V
TVJ = 125°C 2.2 V
V
GE(th)
IC = 0.4 mA; VGE = V
CE
4.5 6.5 V
I
CES
V
CE
= V
CES; VGE
= 0 V; TVJ = 25°C 0.6 mA
TVJ = 125°C 0.4 mA
I
GES
VCE = 0 V; VGE = ± 20 V 200 nA
t
d(on)
30 ns
t
r
45 ns
t
d(off)
270 ns
t
f
40 ns
E
on
0.7 mJ
E
off
0.5 mJ
C
ies
VCE = 25 V; VGE = 0 V; f = 1 MHz 800 pF
Q
Gon
VCE= 300V; VGE = 15 V; IC = 15 A 57 nC
R
thJC
(per IGBT) 1.3 K/W
Inductive load, T
VJ
= 125°C
VCE = 300 V; IC = 15 A
VGE = ±15 V; RG = 68 Ω
Output Inverter D1 - D6
Symbol Conditions Maximum Ratings
I
F25
TC = 25°C35A
I
F80
TC = 80°C24A
Symbol Conditions Characteristic Values
min. typ. max.
V
F
IF = 15 A; VGE = 0 V; TVJ = 25°C 2.0 V
TVJ = 125°C 1.3 V
I
RM
IF = 15 A; diF/dt = -400 A/µs; TVJ = 125°C13A
t
rr
VR = 300 V; VGE = 0 V 90 ns
R
thJC
(per diode) 2.1 K/W
Equivalent Circuits for Simulation
Conduction
D11 - D16
Rectifier Diode (typ. at TJ = 125°C)
V0 = 1.18 V; R0 = 15 m
Ω
T1 - T6 / D1 - D6
IGBT (typ. at VGE = 15 V; TJ = 125°C)
V0 = 0.99 V; R0 = 81 m
Ω
Free Wheeling Diode (typ. at TJ = 125°C)
V0 = 1.09V; R0 = 12 m
Ω
T7 / D7
IGBT (typ. at VGE = 15 V; TJ = 125°C)
V0 = 0.89 V; R0 = 122 m
Ω
Free Wheeling Diode (typ. at TJ = 125°C)
V0 = 1.07 V; R0 = 23 m
Ω
Thermal Response
D11 - D16
Rectifier Diode (typ.)
C
th1
= 0.093 J/K; R
th1
= 1.212 K/W
C
th2
= 0.778 J/K; R
th2
= 0.258 K/W
T1 - T6 / D1 - D6
IGBT (typ.)
C
th1
= 0.077 J/K; R
th1
= 1.111 K/W
C
th2
= 0.732 J/K; R
th2
= 0.279 K/W
Free Wheeling Diode (typ.)
C
th1
= 0.065 J/K; R
th1
= 1.766 K/W
C
th2
= 0.636 J/K; R
th2
= 0.344 K/W
T7 / D7
IGBT (typ.)
C
th1
= 0.071 J/K; R
th1
= 1.211 K/W
C
th2
= 0.726 J/K; R
th2
= 0.293 K/W
Free Wheeling Diode (typ.)
C
th1
= 0.043 J/K; R
th1
= 2.738 K/W
C
th2
= 0.54 J/K; R
th2
= 0.462 K/W
Page 3
© 2001 IXYS All rights reserved
3 - 8
MUBW 15-06 A7
Brake Chopper T7
Symbol Conditions Maximum Ratings
V
CES
TVJ = 25°C to 150°C 600 V
V
GES
Continuous
±
20 V
V
GEM
Transient
±
30 V
I
C25
TC = 25°C20A
I
C80
TC = 80°C15A
RBSOA VGE = ±15 V; RG = 82 Ω; TVJ = 125°CI
CM
= 20 A
Clamped inductive load; L = 100 µH V
CEK
≤ V
CES
t
SC
V
CE
= V
CES
; VGE = ±15 V; RG = 82 Ω; TVJ = 125°C10µs
(SCSOA) non-repetitive
P
tot
TC = 25°C85W
Symbol Conditions Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min. typ. max.
V
CE(sat)
IC = 10 A; VGE = 15 V; TVJ = 25°C 1.9 2.3 V
TVJ = 125°C 2.1 V
V
GE(th)
IC = 0.4 mA; VGE = V
CE
4.5 6.5 V
I
CES
V
CE
= V
CES; VGE
= 0 V; TVJ = 25°C 0.5 mA
TVJ = 125°C 0.3 mA
I
GES
VCE = 0 V; VGE = ± 20 V 200 nA
t
d(on)
40 ns
t
r
40 ns
t
d(off)
230 ns
t
f
30 ns
E
on
0.4 mJ
E
off
0.3 mJ
C
ies
VCE = 25 V; VGE = 0 V; f = 1 MH z 600 pF
Q
Gon
VCE= 300 V; VGE = 15 V; IC = 10 A 39 nC
R
thJC
1.5 K/W
Brake Chopper D7
Symbol Conditions Maximum Ratings
V
RRM
TVJ = 25°C to 150°C 600 V
I
F25
TC = 25°C20A
I
F80
TC = 80°C15A
Symbol Conditions Characteristic Values
min. typ. max.
V
F
IF = 10 A; TVJ = 25°C 2.1 V
TVJ = 125°C 1.3 V
I
R
VR = V
RRM;
TVJ = 25°C 0.06 mA
TVJ = 125°C 0.07 mA
I
RM
IF = 10 A; diF/dt = -400 A/µs; TVJ = 125°C11A
t
rr
VR = 300 V 80 ns
R
thJC
3.2 K/W
Inductive load, TVJ = 125°C
VCE = 300 V; IC = 10 A
VGE = ±15 V; RG = 82 Ω
Page 4
© 2001 IXYS All rights reserved
4 - 8
MUBW 15-06 A7
Temperature Sensor NTC
Symbol Conditions Characteristic Values
min. typ. max.
R
25
T = 25°C 4.75 5.0 5.25 kΩ
B
25/50
3375 K
Module
Symbol Conditions Maximum Ratings
T
VJ
Operating -40...+125 °C
T
JM
150 °C
T
stg
-40...+125 °C
V
ISOL
I
ISOL
≤ 1 mA; 50/60 Hz 2500 V~
M
d
Mounting torque (M5) 2.7 - 3.3 Nm
Symbol Conditions Characteristic Values
min. typ. max.
R
pin-chip
5mΩ
d
S
Creepage distance on surface 6 mm
d
A
Strike distance in air 6 mm
R
thCH
with heatsink compound 0.02 K/W
Weight 180 g
Dimensions in mm (1 mm = 0.0394")
Page 5
© 2001 IXYS All rights reserved
5 - 8
MUBW 15-06 A7
0.001 0.01 0.1 1
0
20
40
60
80
100
23456789110
10
1
10
2
10
3
0.0 0.4 0.8 1.2 1.6 2.0
0
10
20
30
40
50
0 20406080
0
100
200
300
400
500
0 20406080100120140
0.001 0.01 0.1 1 10
0.0
0.4
0.8
1.2
1.6
I2t
I
FSM
I
F
A
V
F
t
s
t
ms
P
tot
W
I
d(AV)M
A
T
amb
t
s
K/W
A
2
s
0 20406080100120140
0
10
20
30
40
50
60
I
d(AV)
T
C
A
V
A
°C °C
DWFN9-16
Z
thJC
TVJ= 125°C
T
VJ
= 25°C
TVJ= 45°C
TVJ= 150°C
TVJ= 45°C
TVJ= 150°C
50Hz, 80% V
RRM
R
thA
:
0.05 K/W
0.15 K/W
0.3 K/W
0.5 K/W
1 K/W
2 K/W
5 K/W
Fig. 4 Power dissipation versus direct output current and ambient temperature, sin
180°
Fig. 5 Max. forward current versus
case temperature
Fig. 6 Transient thermal impedance junction to case
Fig. 1 Forward current versus voltage
drop per diode
Fig. 2 Surge overload current Fig. 3 I
2
t versus time per diode
Input Rectifier Bridge D11 - D16
Page 6
© 2001 IXYS All rights reserved
6 - 8
MUBW 15-06 A7
0 200 400 600 800 1000
0
10
20
30
40
!
$
'
012345
0
10
20
30
40
50
0 20406080
0
5
10
15
20
012345
0
10
20
30
40
50
TJ = 25°C
TJ = 125°C
VCE = 300V
I
C
= 15A
V
CE
V
A
I
C
V
CE
A
I
C
V
nC
Q
G
-di/dt
V
V
GE
I
RM
t
rr
ns
A/µs
MUBW1506A7
TJ = 125°C
V
R
= 300V
IF = 15A
I
RM
t
rr
9V
11V
VGE= 17V
15V
13V
A
9V
11V
VGE= 17V
15V
13V
4 6 8 10121416
0
10
20
30
40
50
VCE = 20V
V
V
GE
A
I
C
TJ = 25°C
TJ = 125°C
0123
0
10
20
30
40
50
V
V
F
I
F
TJ = 25°C
TJ = 125°C
A
Fig. 7 Typ. output characteristics Fig. 8 Typ. output characteristics
Fig. 9 Typ. transfer characteristics Fig. 10 Typ. forward characteristics of
free wheeling diode
Fig. 11 Typ. turn on gate charge Fig. 12 Typ. turn off characteristics of
free wheeling diode
Output Inverter T1 - T6 / D1 - D6
Page 7
© 2001 IXYS All rights reserved
7 - 8
MUBW 15-06 A7
Fig. 13 Typ. turn on energy and switching Fig. 14 Typ. turn off energy and switching
times versus collector current times versus collector current
Fig. 15 Typ. turn on energy and switching Fig.16 Typ. turn off energy and switching
times versus gate resistor times versus gate resistor
Fig. 17 Reverse biased safe operating area Fig. 18 Typ. transient thermal impedance
RBSOA
0 102030
0
1
2
3
0
20
40
60
0102030
0.0
0.5
1.0
1.5
2.0
0
100
200
300
400
0.00001 0.0001 0.001 0.01 0.1 1 10
0.0001
0.001
0.01
0.1
1
10
0 20406080100120
0.0
0.2
0.4
0.6
0.8
0
100
200
300
400
0 20406080100120
0.0
0.5
1.0
1.5
2.0
0
15
30
45
60
single pulse
VCE = 300V
VGE = ±15V
R
G
= 68
Ω
T
VJ
= 125°C
MUBW1506A7
V
CE
= 300V
V
GE
= ±15V
I
C
= 15A
TVJ = 125°C
0 100 200 300 400 500 600 700
0
10
20
30
40
RG = 68
Ω
T
VJ
= 125°C
V
CE
= 300V
V
GE
= ±15V
R
G
= 68
Ω
T
VJ
= 125°C
E
on
V
CE
= 300V
V
GE
= ±15V
IC = 15A
T
VJ
= 125°C
J
d(on)
J
r
E
off
J
d(off)
J
f
E
on
J
d(on)
J
r
E
off
J
d(off)
J
f
I
C
A
I
C
A
E
off
E
on
t
t
R
G
Ω
R
G
Ω
V
CE
t
s
mJ
E
on
mJ
E
off
ns
t
ns
t
I
CM
K/W
Z
thJC
IGBT
diode
V
A
mJ
ns
ns
mJ
Output Inverter T1 - T6 / D1 - D6
Page 8
© 2001 IXYS All rights reserved
8 - 8
MUBW 15-06 A7
Fig. 19 Typ. output characteristics Fig. 20 Typ. forward characteristics of
free wheeling diode
Fig. 21 Typ. turn off energy and switching Fig. 22 Typ. turn off energy and switching
times versus collector current times versus gate resistor
Fig. 23 Typ. transient thermal impedance Fig. 24 Typ. thermistorresistance versus
temperature
0123456
0
5
10
15
20
25
30
VGE = 15V
V
V
CE
A
I
C
TJ = 25°C
TJ = 125°C
01234
0
5
10
15
20
25
30
V
V
F
I
F
TJ = 25°C
T
J
= 125°C
A
01020
0
1
2
3
4
0
100
200
300
400
VCE = 300V
VGE = ±15V
R
G
= 82
Ω
T
VJ
= 125°C
E
off
J
d(off)
J
f
I
C
A
E
off
t
mJ
ns
04080120
0.0
0.5
1.0
1.5
0
200
400
600
VCE = 300V
V
GE
= ±15V
I
C
= 10A
TVJ = 125°C
E
off
J
d(off)
J
f
Ω
E
off
t
ns
mJ
0.00001 0.0001 0.001 0.01 0.1 1 10
0.0001
0.001
0.01
0.1
1
10
single pulse
t
s
K/W
Z
thJC
IGBT
diode
0 25 50 75 100 125 150
100
1000
10000
MUBW1506A7
T
°C
Ω
R
R
G
Brake Chopper T7 / D7
Temperature Sensor NTC
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