Datasheet MUBW15-06A6 Datasheet (IXYS)

Converter - Brake - Inverter Module (CBI1)

MUBW 15-06 A6

Rectifier Brake Inverter

V

= 1200V V

RRM

I

= 11 A I

FAVM

I

= 250 A V

FSM

Input Rectifier Bridge D8 - D13

Symbol Conditions Maximum Ratings
V

RRM

I

F

I

FAVM

I

FSM

TVJ = 25°C 36 A
TVJ = 150°C; TK = 70°C 11 A
TVJ = 45°C; t = 10 ms sine 50 Hz 250 A

i²t TVJ = 125°C 310 A²s
T

VJ

Symbol Conditions Characteristic Values

= 600 V V

CES

= 11 A I

C25

= 2 V V

CE(sat)

= 600 V

CES

= 18 A

C25

= 2.1 V

CE(sat)

1200 V

+150 °C

(TVJ = 25°C, unless otherwise specified)

min. typ. max.

Features

●

NPT IGBT technology
Square RBSOA, no latchup

●

Free wheeling diodes with Hiperfast
and soft recovery behaviour

●

Isolation voltage 2500 V~

●

Built in temperature sense

●

High level of integration:
one module for complete drive
system

●

Direct Copper Bonded Al2O3 ceramic
base plate

Applications

●

AC motor control

●

AC servo and robot drives

I

R

V

F

R

thJC

V

= 1200 V; TVJ = 25°C 10 µA

RRM

TVJ = 125°C 3 mA
IF = 36 A 1.15 1.4 V
per die 1.4 °C/W

IXYS reserves the right to change limits, test conditions and dimensions.

© 2000 IXYS All rights reserved

Advantages

●

No need of external isolation

●

Easy to mount with two screws

●

Package designed for wave
soldering

●

High temperature and power cycling
capability

031

1 - 8

Output Inverter T1 - T6, D1 - D6

Symbol Conditions Maximum Ratings

MUBW 15-06 A6

V

CES

V

CGR

V

GE

I

C

TVJ = 25°C 600 V
TVJ = 25°C; RGE = 20kW 600 V

TVJ = 25°C

±

20 V

TC = 25°C 18 A
TC = 90°C 10 A

I

CM

tp = 1 ms = 1% duty cycle; TC = 25°C 36 A

TC = 90°C 20 A

t

SC

P

tot

T

VJ

T

VJ

IGBT VCE = 600 V; TVJ = 125°C
non-repetitive 10 µs

TC = 25°C 61 W
Free-Wheeling Diode +150 °C

IGBT +150 °C

Symbol Conditions Characteristic Values

(TVJ = 25°C, unless otherwise specified)

min. typ. max.

I

CES

I

GES

V

GE(th)

V

(BR)CES

V

CE(sat)

VGE = 0 V; VCE = 600 V 1 mA
VCE = 0 V; VGE = 25 V 100 nA
VGE = VCE; IC = 0.35 mA 4.5 5.5 6.5 V
VGE = 0 V; IC = 10 mA; TVJ = -40°C 600 V
VGE = 15 V; IC = 10 A;TVJ = 25°C 2.1 2.5 V

TVJ = 125°C 2.4 2.8 V

t
t

t
t

E
E

C
C
C

g
Q
V

t

Q

I
R

f
r

d(on)
d(off)

off
on

iss
oss
rss

fs

g

F

rr

r

r

thJC

25 ns

25 ns
Inductive load, T
VCC = 300 V; IC = 10 A
RG = 100 W; VGE = ±15 V

= 125°C

VJ

35 ns

250 ns

0.38 mJ

0.58 mJ

VGE = 0 V
VCE = 25 V
f = 1 MHz

570 pF

80 pF

55 pF

VCE = 20 V; IC = 10 A 3 S
VCC = 300 V; IC = 10 A pulse; VGE = 15 V 39 nC
IF = 10 A; VGE = 0 V; TVJ = 25°C 2 V

TVJ = 125°C 1.8 V

IF = 10 A; VR = -300 V; VGE = 0 V 0.2 µs
diF/dt = -350 A/µs; TVJ = 100°C

IF = 10 A; VR = -300 V; TVJ = 25°C 0.3 µC
diF/dt = -350 A/µs; VGE= 0 V; TVJ = 125°C 0.9 µC

250 µA

IGBT (per die) 1.7 °C/W
Diode (per die) 2.3 °C/W

© 2000 IXYS All rights reserved

2 - 8

Brake Chopper T7, D7

Symbol Conditions Maximum Ratings

MUBW 15-06 A6

V

CES

V

CGR

V

GE

I

C

TVJ = 25°C 600 V
TVJ = 25°C; RGE = 20kW 600 V

TVJ = 25°C

±

20 V

TC = 25°C 11 A
TC = 90°C 8 A

I

CM

tp = 1 ms = 1% duty cycle; TC = 25°C 22 A

TC = 90°C 16 A

t

SC

P

tot

T

VJ

T

VJ

IGBT VCE = 600 V; TVJ = 125°C
non-repetitive 10 µs

TC = 25°C 45 W
Free-Wheeling Diode +150 °C

IGBT +150 °C

Symbol Conditions Characteristic Values

(TVJ = 25°C, unless otherwise specified)

min. typ. max.

I

CES

I

GES

V

GE(th)

V

(BR)CES

V

CE(sat)

VGE = 0 V; VCE = 600 V 20 µA
VCE = 0 V; VGE = 25 V 100 nA
VGE = VCE; IC = 0.5 mA 3 4 5 V
VGE = 0 V; IC = 0.5 mA; TVJ = -40°C 600 V
VGE = 15 V; IC = 6 A; TVJ = 25°C 2 2.5 V

TVJ = 150°C 2.3 2.8 V

t
t

t
t

E
E

C
C
C

g
Q
V

t

Q

I
R

f
r

d(on)
d(off)

off
on

iss
oss
rss

fs

g

F

rr

r

r

thJC

75 110 ns

30 45 ns
Inductive load, T
VCC = 400 V; IC = 6 A
RG = 50 W; VGE = ±15 V

= 150°C

VJ

50 80 ns

250 375 ns

0.21 mJ

0.25 mJ

VGE = 0 V
VCE = 25 V
f = 1 MHz

350 435 pF

40 50 pF

25 30 pF

VCE = 20 V; IC = 6 A 4.2 S
VCC = 400 V; IC = 6 A pulse; VGE = 15 V 32.5 nC
IF = 10 A; VGE = 0 V; TVJ = 25°C 2 V

TVJ = 150°C 1.8 V

IF = 10 A; VR = -300 V; VGE = 0 V 0.2 µs
diF/dt = -350 A/µs; TVJ = 150°C

IF = 10 A; VR = -300 V; TVJ = 25°C 0.3 µC
diF/dt = -350 A/µs; VGE= 0 V; TVJ = 125°C 0.9 µC

250 µA

IGBT (per die) 2.3 °C/W
Diode (per die) 2.3 °C/W

© 2000 IXYS All rights reserved

3 - 8

Module

Symbol Conditions Maximum Ratings

MUBW 15-06 A6

T

stg

V

ISOL

M

d

d

S

d

A

I

£ 1 mA; 50/60 Hz; t = 1 min 2500 V~

ISOL

Mounting torque (M4) 2.0 - 2.2 Nm

Creepage distance on surface 12.7 mm
Strike distance in air 12.7 mm

-40...+125 °C

18 - 20 lb.in.

Weight typ. 42 g

Temperature Sensor R

Symbol Conditions Maximum Ratings

RT

For additional data see C620/4.7k 5% S+M NTC thermistor catalog

= 20°C 4.7 kW

amb

Dimensions in mm (1 mm = 0.0394")

5.7 ± 0.3

3.4 ± 0.1

21.1 ± 0.5

17.1 ± 0.3

57.3-0.3

5.5+0.2

4.3+0.2

© 2000 IXYS All rights reserved

4 - 8

Input Rectifier Bridge D8 - D13

MUBW 15-06 A6

I

FSM

300

250

200

150

A

50Hz, 80%V
T

= 45°C

VJ

T

= 180°C

VJ

50

A

40

I

F

typ. lim.

30

TVJ= 180°C
TVJ= 25°C

20

100

10

0

0.00.20.40.60.81.01.21.41.6

V

V

F

50

0

10

-3

10

-2

10

-1

Forward characteristics Surge overload current

I

: crest value, t: duration

FSM

10

1000

VR = 0 V

800

A2s

RRM

600

I2t

400

TVJ=45°C

200

TVJ=180°C

0

1

s

10

t

100

23456789110

ms

t

I2t versus time (1-10 ms)

10

(Z

is measured using 50 µm

thJH

thermal grease)

1

D = 0
D = 0. 005
D = 0. 01
D = 0. 02
D = 0. 05
D = 0. 1
D = 0. 2
D = 0.5

0.00001 0.0001 0.001 0.01 0.1 1 10 100

t (s)

Transient thermal resistance junction to heatsink

0.1

0.01

0.001

Z

thJH

[K/W]

© 2000 IXYS All rights reserved

5 - 8

Output Inverter T1 - T6

MUBW 15-06 A6

© 2000 IXYS All rights reserved

6 - 8

Output Inverter T1 - T6

MUBW 15-06 A6

Transient thermal resistance junction to heatsink

0.00001 0.0001 0.001 0.01 0.1 1 10 100

t (s)

© 2000 IXYS All rights reserved

D = 0
D = 0.005
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5

10

(Z

is measured using 50 µm

thJH

thermal grease)

1

IGBT

[K/W]

Z

thJH

0.1

0.01

0.001

7 - 8

Output Inverter D1 - D6

30

A

25

I

F

20

15

10

5

TVJ=150°C
TVJ=100°C
TVJ= 25°C

MUBW 15-06 A6

1.4

TVJ= 100°C

nC

VR = 300V

1.2

1.0

Q

r

0.8

IF= 20A
IF= 10A
IF= 5A

0.6

0.4

0.2

I

RM

40

A

30

20

10

TVJ= 100°C
VR = 300V

IF= 20A
IF= 10A
IF= 5A

0

0.0 0.5 1.0 1 .5 2.0 2.5
V

Forward current IF versus V

2.0

1.5

K

f

1.0

I

RM

0.5

Q

r

0.0
0 40 80 120 160

T

VJ

Dynamic parameters Qr, I
versus T

VJ

V

F

F

0.0
100 1000

A/ms

-diF/dt

Reverse recovery charge Q
versus -diF/dt

120

ns

TVJ= 100°C
VR = 300V

r

110

t

rr

100

IF= 20A
IF= 10A
IF= 5A

90

80

70

°C

RM

200 600 10000 400 800

-di

A/ms

/dt

F

Recovery time trr versus -diF/dt Peak forward voltage VFR and t

0

200 600 10000 400 800

-di

Peak reverse current I
versus -diF/dt

20

V

V

t

FR

fr

15

V

10

5

TVJ= 100°C
IF = 10A

0

0 200 400 600 800 1000

diF/dt

versus diF/dt

A/ms

/dt

F

RM

1.2

m

FR

s

0.9
t

fr

0.6

0.3

8-06A

0.0

A/ms

fr

D = 0
D = 0.005
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5

0.00001 0.0001 0.001 0.01 0.1 1 10 100

t(s)

Transient thermal resistance junction to heatsink

© 2000 IXYS All rights reserved

10

(Z

thJH

thermal grease)

1

Fred

[K/W ]

Z

thJH

0.1

0.01

0.001

is measured using 50 µm

8 - 8