Datasheet MTSF3203R2 Datasheet (Motorola)

1

Motorola TMOS Power MOSFET Transistor Device Data

 

Medium Power Surface Mount Products

  
  

Micro8 devices are an advanced series of power MOSFETs
which utilize Motorola’s High Cell Density HDTMOS process to
achieve lowest possible on–resistance per silicon area. They are
capable of withstanding high energy in the avalanche and commuta ­tion modes and the drain–to–source diode has a very low reverse
recovery time. Micro8  devices are des igned for use in low voltage,
high speed switching applications where power efficiency is important.
Typical applications are dc–dc converters, and power management in
portable and battery powered products such as computers, printers,
cellular and cordless phones. They can also be used for low voltage
motor controls in mass storage products such as disk drives and tape
drives. The avalanche energy is specified to eliminate the guesswork
in designs where inductive loads are switched and offer additional
safety margin against unexpected voltage transients.

• Miniature Micro8 Surface Mount Package — Saves Board Space

• Extremely Low Profile (<1.1 mm) for thin applications such as

PCMCIA cards

• Ultra Low R

DS(on)

Provides Higher Efficiency and Extends

Battery Life

• Logic Level Gate Drive — Can Be Driven by Logic ICs

• Diode Is Characterized for Use In Bridge Circuits

• Diode Exhibits High Speed, With Soft Recovery

• I

DSS

Specified at Elevated Temperature

• Avalanche Energy Specified

• Mounting Information for Micro8 Package Provided

DEVICE MARKING ORDERING INFORMATION

Device Reel Size Tape Width Quantity

3A

MTSF3203R2 13″ 12 mm embossed tape 4000 units

Preferred devices are Motorola recommended choices for future use and best overall value.

HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Micro8 is a registered trademark of International
Rectifier. Thermal Clad is a trademark of the Bergquist Company.

This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.



SEMICONDUCTOR TECHNICAL DATA

Order this document

by MTSF3203/D

 Motorola, Inc. 1998





SINGLE TMOS

POWER MOSFET

4.9 AMPERES
20 VOLTS

R

DS(on)

= 0.05 OHM

CASE 846A–02, Style 1

Micro8

Motorola Preferred Device

D

S

G

Source
Source
Source

Gate

1
2
3
4

8
7
6
5

Top View

Drain
Drain
Drain
Drain

MTSF3203

2

Motorola TMOS Power MOSFET Transistor Device Data

MAXIMUM RATINGS

(TJ = 25°C unless otherwise noted)

Rating

Symbol Max Unit

Drain–to–Source Voltage V

DSS

20 V

Drain–to–Gate Voltage (RGS = 1.0 MΩ) V

DGR

20 V

Gate–to–Source Voltage — Continuous V

GS

± 12 V

1 inch SQ.
FR–4 or G–10 PCB
Figure 1 below

Steady State

Thermal Resistance — Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current — Continuous @ TA = 25°C
Continuous @ TA = 70°C
Pulsed Drain Current

(1)

R

THJA

P

D

I

D

I

D

I

DM

70

1.79

14.29

4.9

3.9

24.4

°C/W

Watts

mW/°C

A
A
A

Minimum
FR–4 or G–10 PCB
Figure 2 below

Steady State

Thermal Resistance — Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current — Continuous @ TA = 25°C
Continuous @ TA = 70°C
Pulsed Drain Current

(1)

R

THJA

P

D

I

D

I

D

I

DM

160

0.78

6.25

3.2

2.5
16

°C/W

Watts

mW/°C

A
A
A

Operating and Storage Temperature Range TJ, T

stg

– 55 to 150 °C

Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C

(VDD = 30 Vdc, VGS = 5.0 Vdc, Peak IL = 4.9 Apk, L = TBD mH, RG = 25 W)

E

AS

TBD

mJ

(1) Repetitive rating; pulse width limited by maximum junction temperature.

Figure 1. 1.0 Inch Square FR–4 or G–10 PCB Figure 2. Minimum FR–4 or G–10 PCB

MTSF3203

3

Motorola TMOS Power MOSFET Transistor Device Data

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage (Cpk ≥ 2.0) (1) (3)

(VGS = 0 Vdc, ID = 250 µAdc)
T emperature Coef ficient (Positive)

V

(BR)DSS

20
—

—

TBD

—
—

Vdc

mV/°C

Zero Gate Voltage Drain Current

(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)

I

DSS

—
—

—
—

1.0
25

µAdc

Gate–Body Leakage Current (VGS = ± 12 Vdc, VDS = 0) I

GSS

— — 100 nAdc

ON CHARACTERISTICS

(1)

Gate Threshold Voltage (Cpk ≥ 2.0) (3)

(VDS = VGS, ID = 250 µAdc)
Threshold Temperature Coefficient (Negative)

V

GS(th)

1.0
—

TBD
TBD

—
—

Vdc

mV/°C

Static Drain–to–Source On–Resistance (Cpk ≥ 2.0) (3)

(VGS = 4.5 Vdc, ID = 4.9 Adc)
(VGS = 2.5 Vdc, ID = 3.9 Adc)

R

DS(on)

—
—

TBD
TBD

40
50

mΩ

Forward Transconductance (VDS = 10 Vdc, ID = 4.9 Adc) g

FS

2.0 — — Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

C

iss

— TBD — pF

Output Capacitance

(VDS = 16 Vdc, VGS = 0 Vdc,

f = 1.0 MHz

)

C

oss

— TBD —

Transfer Capacitance

f = 1.0 MHz)

C

rss

— TBD —

SWITCHING CHARACTERISTICS

(2)

Turn–On Delay Time

t

d(on)

— TBD — ns

Rise Time

(VDS = 10 Vdc, ID = 4.9 Adc,

t

r

— TBD —

Turn–Off Delay Time

(

DS

,

D

,

VGS = 4.5 Vdc, RG = 6 Ω) (1)

t

d(off)

— TBD —

Fall Time t

f

— TBD —

Turn–On Delay Time

t

d(on)

— TBD — ns

Rise Time

(VDD = 10 Vdc, ID = 3.9 Adc,

t

r

— TBD —

Turn–Off Delay Time

(

DD

,

D

,

VGS = 2.5 Vdc, RG = 6 Ω) (1)

t

d(off)

— TBD —

Fall Time t

f

— TBD —

Gate Charge

Q

T

— TBD TBD nC

(VDS = 10 Vdc, ID = 4.9 Adc,

Q

1

— TBD —

(

DS

,

D

,

VGS = 4.5 Vdc)

Q

2

— TBD —

Q

3

— TBD —

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage

(IS = 1.5 Adc, VGS = 0 Vdc) (1)

(IS = 1.5 Adc, VGS = 0 Vdc, TJ = 125°C)

V

SD

—
—

TBD
TBD

1.0
—

Vdc

Reverse Recovery Time

t

rr

— TBD —

ns

(IS = 1.5 Adc, VGS = 0 Vdc,

dI

/dt = 100 A/µs) (1

)

t

a

— TBD —

dIS/dt = 100 A/µs)

(1)

t

b

— TBD —

Reverse Recovery Storage Charge Q

RR

— TBD — µC

(1) Pulse Test: Pulse Width ≤300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) Reflects typical values.

Cpk =

Max limit – Typ

3 x SIGMA

MTSF3203

4

Motorola TMOS Power MOSFET Transistor Device Data

INFORMATION FOR USING THE Micro8 SURFACE MOUNT PACKAGE

MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS

Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must be
the correct size to ensure proper solder connection interface

between the board and the package. With the correct pad
geometry, the packages will self–align when subjected to a
solder reflow process.

mm

inches

0.041

1.04

0.208

5.28

0.015

0.38

0.0256

0.65

0.126

3.20

Micro8 POWER DISSIP ATION

The power dissipation of the Micro8 is a function of the input
pad size. This can vary from the minimum pad size for
soldering to the pad size given for maximum power
dissipation. Power dissipation for a surface mount device is
determined by T

J(max)

, the maximum rated junction

temperature of the die, R

θJA

, the thermal resistance from the
device junction to ambient; and the operating temperature, TA.
Using the values provided on the data sheet for the Micro8
package, PD can be calculated as follows:

PD =

T

J(max)

– T

A

R

θJA

The values for the equation are found in the maximum

ratings table on the data sheet. Substituting these values into

the equation for an ambient temperature TA of 25°C, one can
calculate the power dissipation of the device which in this case
is 0.78 Watts.

PD =

150°C – 25°C

160°C/W

= 0.78 Watts

The 160°C/W for the Micro8 package assumes the
recommended footprint on a glass epoxy printed circuit board
to achieve a power dissipation of 0.78 Watts using the footprint
shown. Another alternative would be to use a ceramic
substrate or an aluminum core board such as Thermal Clad.
Using board material such as Thermal Clad, the power
dissipation can be doubled using the same footprint.

SOLDERING PRECAUTIONS

The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.

• Always preheat the device.

• The delta temperature between the preheat and soldering

should be 100°C or less.*

• When preheating and soldering, the temperature of the

leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference shall be a maximum of 10°C.

• The soldering temperature and time shall not exceed

260°C for more than 10 seconds.

• When shifting from preheating to soldering, the maximum

temperature gradient shall be 5°C or less.

• After soldering has been completed, the device should be

allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.

• Mechanical stress or shock should not be applied during

cooling.

* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.

MTSF3203

5

Motorola TMOS Power MOSFET Transistor Device Data

TYPICAL SOLDER HEATING PROFILE

For any given circuit board, there will be a group of control
settings that will give the desired heat pattern. The operator
must set temperatures for several heating zones and a figure
for belt speed. T aken together , these control settings make up
a heating “profile” for that particular circuit board. On
machines controlled by a computer, the computer remembers
these profiles from one operating session to the next. Figure
3 shows a typical heating profile for use when soldering a
surface mount device to a printed circuit board. This profile will
vary among soldering systems, but it is a good starting point.
Factors that can affect the profile include the type of soldering
system in use, density and types of components on the board,
type of solder used, and the type of board or substrate material
being used. This profile shows temperature versus time. The

line on the graph shows the actual temperature that might be
experienced on the surface of a test board at or near a central
solder joint. The two profiles are based on a high density and
a low density board. The Vitronics SMD310 convection/in­frared reflow soldering system was used to generate this
profile. The type of solder used was 62/36/2 Tin Lead Silver
with a melting point between 177–189°C. When this type of
furnace is used for solder reflow work, the circuit boards and
solder joints tend to heat first. The components on the board
are then heated by conduction. The circuit board, because it
has a large surface area, absorbs the thermal energy more
efficiently, then distributes this energy to the components.
Because of this effect, the main body of a component may be
up to 30 degrees cooler than the adjacent solder joints.

STEP 1

PREHEAT

ZONE 1
“RAMP”

STEP 2

VENT

“SOAK”

STEP 3

HEATING

ZONES 2 & 5

“RAMP”

STEP 4

HEATING

ZONES 3 & 6

“SOAK”

STEP 5

HEATING

ZONES 4 & 7

“SPIKE”

STEP 6

VENT

STEP 7

COOLING

200

°

C

150

°

C

100

°

C

50°C

TIME (3 TO 7 MINUTES TOTAL)

T

MAX

SOLDER IS LIQUID FOR

40 TO 80 SECONDS
(DEPENDING ON
MASS OF ASSEMBLY)

205

°

TO 219°C
PEAK AT
SOLDER JOINT

DESIRED CURVE FOR LOW
MASS ASSEMBLIES

100°C

150°C

160

°

C

170°C

140

°

C

Figure 3. Typical Solder Heating Profile

DESIRED CURVE FOR HIGH
MASS ASSEMBLIES

MTSF3203

6

Motorola TMOS Power MOSFET Transistor Device Data

T APE & REEL INFORMA TION

Micro8

Dimensions are shown in millimeters (inches)

FEED DIRECTION

SECTION A–A

NOTES:

1. CONFORMS TO EIA–481–1.

2. CONTROLLING DIMENSION: MILLIMETER.

PIN
NUMBER 1

NOTES:

1. CONFORMS TO EIA–481–1.

2. CONTROLLING DIMENSION: MILLIMETER.

3. INCLUDES FLANGE DISTORTION AT OUTER EDGE.

4. DIMENSION MEASURED AT INNER HUB.

12.30

4.10 (.161)

11.70
(.484)
(.461)

1.85 (.072)

3.90 (.154)

2.05 (.080)

1.95 (.077)
BBA

A

8.10 (.318)

7.90 (.312)

5.55 (.218)

5.45 (.215)

1.65 (.065)

1.60 (.063)

1.50 (.059)

1.60 (.063)

1.50 (.059)
TYP.

0.35 (.013)

0.25 (.010)

3.50 (.137)

3.30 (.130)

1.50 (.059)

1.30 (.052)

SECTION B–B

5.40 (.212)

5.20 (.205)

330.0

(13.20)

MAX.

50.0

(1.97)

MIN.

14.4 (.57)

12.4 (.49)
NOTE 4

18.4 (.724)
MAX.

NOTE 3

13.2 (.52)

12.8 (.50)

MTSF3203

7

Motorola TMOS Power MOSFET Transistor Device Data

P ACKAGE DIMENSIONS

STYLE 1:

PIN 1. SOURCE

2. SOURCE

3. SOURCE

4. GATE

5. DRAIN

6. DRAIN

7. DRAIN

8. DRAIN

CASE 846A–02

ISSUE D
MICRO8

S

B

M

0.08 (0.003) A

S

T

DIM MIN MAX MIN MAX

INCHESMILLIMETERS

A 2.90 3.10 0.114 0.122
B 2.90 3.10 0.114 0.122
C ––– 1.10 ––– 0.043
D 0.25 0.40 0.010 0.016
G 0.65 BSC 0.026 BSC
H 0.05 0.15 0.002 0.006
J 0.13 0.23 0.005 0.009
K 4.75 5.05 0.187 0.199
L 0.40 0.70 0.016 0.028

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION A DOES NOT INCLUDE MOLD FLASH,
PROTRUSIONS OR GATE BURRS. MOLD FLASH,
PROTRUSIONS OR GATE BURRS SHALL NOT
EXCEED 0.15 (0.006) PER SIDE.

4. DIMENSION B DOES NOT INCLUDE INTERLEAD
FLASH OR PROTRUSION. INTERLEAD FLASH OR
PROTRUSION SHALL NOT EXCEED 0.25 (0.010)
PER SIDE.

–B–

–A–

D

K

G

PIN 1 ID

8 PL

0.038 (0.0015)

–T–

SEATING
PLANE

C

H

J

L

MTSF3203

8

Motorola TMOS Power MOSFET Transistor Device Data

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty , representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “T ypical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
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applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Opportunity/Affirmative Action Employer.

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MTSF3203/D

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