Page 1
CYStech Electronics Corp.
30V N-Channel Enhancement Mode MOSFET
MTA90N03ZN3
Features
Simple drive requirement.
•
Small package outline.
•
ESD protected.
•
Pb-free lead plating and halogen-free package.
•
Symbol Outline
BVDSS 30V
ID
RDSON@VGS=4.5V, ID=2.5A
RDSON@VGS=3V,ID=2.5A
Spec. No. : C831N3
Issued Date : 2012.07.04
Revised Date : 2012.12.28
Page No. : 1/8
3.2A
130mΩ(typ)
144mΩ(typ)
MTA90N03ZN3 SOT-23
D
G：Gate
S：Source
D：Drain
G
S
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage VDS 30
Gate-Source Voltage VGS ±12
Continuous Drain Current @ TA=25°C , VGS=4.5V
Continuous Drain Current @ TA=70°C, VGS=4.5V
Pulsed Drain Current (Notes 1, 2) IDM 10
Maximum Power Dissipation@ TA=25℃
Linear Derating Factor
ESD susceptibility
Operating Junction and Storage Temperature Tj, Tstg -55~+150
Note : 1. Pulse width limited by maximum junction temperature.
2. Pulse width≤ 300μs, duty cycle≤2%.
3. Surface mounted on 1 in² copper pad of FR-4 board, t≤10s.
4. Human body model, 1.5kΩ in series with 100pF.
Symbol Limits Unit
ID
PD 1.38 (Note 3) W
0.01
1000 (Note 4) V
3.2
2.6
V
A
W/°C
°C
MTA90N03ZN3 CYStek Product Specification
Page 2
Thermal Performance
Parameter Symbol Limit Unit
CYStech Electronics Corp.
Spec. No. : C831N3
Issued Date : 2012.07.04
Revised Date : 2012.12.28
Page No. : 2/8
Thermal Resistance, Junction-to-Ambient(PCB mounted) Rth,ja 90
Note : Surface mounted on 1 in² copper pad of FR-4 board, 270°C/W when mounted on minimum copper pad.
Electrical Characteristics (Tj=25°C, unless otherwise noted)
Symbol Min. Typ. Max. Unit Test Conditions
Static
BV
V
30 - - V VGS=0, ID=250μA
DSS
0.5 0.9 1.5 V VDS=VGS, ID=250μA
GS(th)
±
I
- -
GSS
I
DSS
- - 1 VDS=30V, VGS=0
- - 10
10 VGS=±12V, VDS=0
μA
VDS=24V, VGS=0 (Tj=70
- 130 160 VGS=4.5V, ID=2.5A
*R
DS(ON)
- 145 180
mΩ
VGS=3V, ID=2.5A
*GFS - 5.4 - S VDS=3V, ID=1.6A
Dynamic
Ciss - 309 -
Coss - 50 -
pF VDS=10V, VGS=0, f=1MHz
Crss - 38 -
t
- 15 -
d(ON)
tr - 35 -
t
- 51 -
d(OFF)
ns
VDS=15V, ID=500mA, VGS=2.5V,
RG=6Ω
tf - 27 -
Qg - 8 -
Qgs - 0.8 -
nC VDS=15V, ID=3.2A, VGS=4.5V
Qgd - 2.8 -
Source-Drain Diode
*VSD - 0.8 1.2 V VGS=0V, IS=1A
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
°C)
°C/W
Ordering Information
Device Package Shipping
MTA90N03ZN3-0-T1-G
(Pb-free lead plating and halogen-free package)
SOT-23
3000 pcs / Tape & Reel
MTA90N03ZN3 CYStek Product Specification
Page 3
GS
V
GS
Typical Characteristics
CYStech Electronics Corp.
Spec. No. : C831N3
Issued Date : 2012.07.04
Revised Date : 2012.12.28
Page No. : 3/8
Typical Output Characteristics
10
V
=10V
GS
8
VGS=4.5V
6
4
, Drain Current (A)
D
I
2
0
00.511.5
Static Drain-Source On-State resistance vs Drain Current
300
250
200
150
Resistance(mΩ)
100
, Static Drain-Source On-State
DS (on)
50
R
VGS=2V
, Drain-Source Voltage(V)
V
DS
VGS=4.5V
VGS=3V
V =2.5V
VGS=2V
VGS=1.8
VGS=3V
Breakdown Voltage
, Normalized Drain-Source
DSS
BV
2
, Source-Drain Voltage(V)
SD
V
Brekdown Voltage vs Ambient Temperature
1.4
ID=250μA,
V
=0V
1.2
1
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1
VGS=0V
Tj=25°C
0.8
0.6
0.4
Tj=150°C
0.2
0
0.1 1 10 100
D
, Drain Current(A)
I
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
300
250
200
150
ID=2.5A
0
0 0.2 0.4 0.6 0.8 1
, Reverse Drain Current (A)
I
DR
Drain-Source On-State Resistance vs Junction Tempearture
2
1.8
1.6
VGS=3V, ID=2.5A
1.4
1.2
, Static Drain-Source On-
100
State Resistance(mΩ)
DS(ON)
50
R
ID=100mA
0
024681
V
, Gate-Source Voltage(V)
GS
, Normalized Static Drain-
DS( ON)
R
0
1
Source On-State Resistance
VGS=4.5V, ID=2.5A
0.8
0.6
-60 -20 20 60 100 140 180
Tj, Junction Temperature(°C)
MTA90N03ZN3 CYStek Product Specification
Page 4
CYStech Electronics Corp.
S
Typical Characteristics(Cont.)
Spec. No. : C831N3
Issued Date : 2012.07.04
Revised Date : 2012.12.28
Page No. : 4/8
Capacitance vs Drain-to-Source Voltage
1000
100
Capacitance---(pF)
10
0.1 1 10 100
V
, Drain-Source Voltage(V)
DS
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
10
8
6
Crss
T
J( MAX)
T
A
θJA
R
C
oss
=25°C
=90°C/W
=150°C
Ciss
Threshold Voltage vs Junction Tempearture
1.6
1.4
1.2
1
0.8
, Normalized Threshold Voltage
0.6
GS( th)
V
0.4
-60 -40 -20 0 20 40 60 80 100 120 140 160
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
10
V
=3V
D
1
ID=250μA
VDS=5V
Power (W)
4
2
0
0.01 0.1 1 10 100
Pulse Width(s)
Maximum Safe Operating Area
10
1
0.1
, Drain Current (A)
D
I
0.01
0.001
TA=25°C, Tj=150°C,
=4.5V, R
θ
=90°C/W
JA
V
GS
Single Pulse
0.01 0.1 1 10 100
, Drain-Source Voltage(V)
V
DS
100μs
1ms
10ms
100ms
DC
0.1
, Forward Transfer Admittance(S)
FS
G
0.01
0.001 0.01 0.1 1
, Drain Current(A)
I
D
Maximum Drain Current vs JunctionTemperature
4
3.5
3
2.5
2
1.5
1
, Maximum Drain Current(A)
D
I
TA=25°C, VGS=4.5V, R
0.5
0
25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
θJA
=90°C/W
Ta=25°C
Pulsed
MTA90N03ZN3 CYStek Product Specification
Page 5
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Spec. No. : C831N3
Issued Date : 2012.07.04
Revised Date : 2012.12.28
Page No. : 5/8
, Drain Current (mA)
D
I
Typical Transfer Characteristics
10000
VDS=3V
1000
100
0.01
150°C
25°C
10
0°C
1
0.1
00.511.522.5
, Gate-Source Voltage(V)
V
GS
1
D=0. 5
0.2
-40° C
Transient Thermal Response Curves
Power Derating Curve
1.6
1.4
1.2
1
0.8
0.6
, Power Dissipation(W)
D
0.4
P
0.2
0
0 20 40 60 80 100 120 140 160
T
Mounted on FR-4 board
, Ambient Temperature(℃)
A
0.1
0.1
0.05
0.02
0.01
0.01
Normalized Transient Thermal Resistance
0.001
1.E-04 1. E-03 1.E-02 1. E-01 1.E+00 1.E+01 1.E+02 1.E+03
Single Pulse
t
, Square Wave Pulse Duration(s)
1
JA
1.R
(t)= r(t)*R
θ
2.Duty Factor, D=t1/t
3.TJM-TA=PDM*Z
4.R
θJA
=90
°C/W
θJA
JA
θ
2
(t)
MTA90N03ZN3 CYStek Product Specification
Page 6
Reel Dimension
CYStech Electronics Corp.
Spec. No. : C831N3
Issued Date : 2012.07.04
Revised Date : 2012.12.28
Page No. : 6/8
Carrier Tape Dimension
MTA90N03ZN3 CYStek Product Specification
Page 7
CYStech Electronics Corp.
Recommended wave soldering condition
Product Peak Temperature Soldering Time
Spec. No. : C831N3
Issued Date : 2012.07.04
Revised Date : 2012.12.28
Page No. : 7/8
Pb-free devices
260 +0/-5 °C
Recommended temperature profile for IR reflow
5 +1/-1 seconds
Profile feature Sn-Pb eutectic Assembly
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(T
S min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (T
− Time (t
L)
L)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Note : All temperatures refer to topside of the package, measured on the package body surface.
3°C/second max. 3°C/second max.
100°C
150°C
60-120 seconds
183°C
60-150 seconds
240 +0/-5 °C 260 +0/-5 °C
10-30 seconds 20-40 seconds
6°C/second max. 6°C/second max.
6 minutes max. 8 minutes max.
Pb-free Assembly
150°C
200°C
60-180 seconds
217°C
60-150 seconds
MTA90N03ZN3 CYStek Product Specification
Page 8
SOT-23 Dimension
CYStech Electronics Corp.
Spec. No. : C831N3
Issued Date : 2012.07.04
Revised Date : 2012.12.28
Page No. : 8/8
Marking:
A
L
3
S
B
1
V
C
D
DIM
Min. Max. Min. Max.
G
Inches Millimeters Inches Millimeters
2
H
K
J
DIM
Style: Pin 1.Gate 2.Source 3.Drain
Min. Max. Min. Max.
2306
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
A 0.1102 0.1204 2.80 3.04 J 0.0032 0.0079 0.08 0.20
B 0.0472 0.0669 1.20 1.70 K 0.0118 0.0266 0.30 0.67
C 0.0335 0.0512 0.89 1.30 L 0.0335 0.0453 0.85 1.15
D 0.0118 0.0197 0.30 0.50 S 0.0830 0.1161 2.10 2.95
G 0.0669 0.0910 1.70 2.30 V 0.0098 0.0256 0.25 0.65
H 0.0000 0.0040 0.00 0.10
Notes: 1.Controlling dimension: millimeters.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
TE
*: Typical
MTA90N03ZN3 CYStek Product Specification
Page 9
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