Datasheet MSM63184B-xxx, MSM63184B-xxxGS-K Datasheet (OKI)

E2E0042-18-95

¡ Semiconductor MSM63184B

This version: Sep. 1998

¡ Semiconductor

MSM63184B

4-Bit Microcontroller with Built-in 640-Dot Matrix LCD Drivers, Operating at 0.9 V (Min.)

GENERAL DESCRIPTION

The MSM63184B is a CMOS 4-bit microcontroller with built-in 640-dot matrix LCD drivers and
operates at 0.9 V (min.). The MSM63184B is suitable for applications such as games, toys,
watches, etc. which are provided with an LCD display.
The MSM63184B is an M6318x series mask ROM-version product of OLMS-63K family, which
employs Oki's original CPU core nX-4/250.
The MSM63P180 is the one-time-programmable ROM version of MSM63188, having one-time
PROM (OTP) as internal program memory.
The MSM63P180 is used to evaluate the software development.

FEATURES

• Rich instruction set
439 instructions

Transfer, rotate, increment/decrement, arithmetic operations, comparison, logic operations,
mask operations, bit operations, ROM table reference, external memory transfer, stack
operations, flag operations, branch, conditional branch, call/return, control.

• Rich selection of addressing modes
Indirect addressing of four data memory types, with current bank register, extra bank
register, HL register and XY register.
Data memory bank internal direct addressing mode.

• Processing speed
Two clocks per machine cycle, with most instructions executed in one machine cycle.
Minimum instruction execution time : 61 ms (@ 32.768 kHz system clock)

1 ms (@ 2 MHz system clock)

• Clock generation circuit
Low-speed clock : 32.768 kHz crystal oscillator
High-speed clock : 2 MHz (Max.) RC or ceramic oscillator select

• Program memory space
8K words
Basic instruction length is 16 bits/1 word

• Data memory space
640 nibbles

• External data memory space
64 Kbytes (expandable by using an I/O port)

1/29

¡ Semiconductor MSM63184B

• Stack level
Call stack level : 8 levels
Register stack level : 16 levels

• I/O ports
Input ports: Selectable as input with pull-up resistance/input with pull-down resistance/

high-impedance input

Output ports: Selectable as P-channel open drain output/N-channel open drain output/

CMOS output/high-impedance output

Input-output ports: Selectable as input with pull-up resistance/input with pull-down

resistance/high-impedance input
Selectable as P-channel open drain output/N-channel open drain

output/CMOS output/high-impedance output
Can be interfaced with external peripherals that use a different power supply than this device
uses.
Number of ports:

Input port : 2 ports ¥ 4 bits
Output port : 4 ports ¥ 4 bits
Input-output port : 5 ports ¥ 4 bits

• Buzzer function
Buzzer output : 0.946 to 5.461 kHz (adjustable in 15 steps)
Buzzer output modes : Intermittent sound 1, 2; simple sound; continu-

ous sound

• LCD driver
Number of segments : 640 Max. (40 SEG ¥ 16 COM)
1/1 to 1/16 duty
1/4 or 1/5 bias (regulator built-in)
Selectable as all-on mode/all-off mode/power down mode/normal display mode
Adjustable contrast

• Reset function

Reset through RESET pin
Power-on reset
Reset by low-speed oscillation halt

• Battery check

Low-voltage supply check
Criterion voltage : Can be selected as 1.05 ±0.10 V, 1.30 ±0.15 V,

2.20 ±0.20 V or 2.80 ±0.30 V

• Power supply backup

Backup circuit (voltage multiplier) enables operation at 0.9 V minimum

2/29

¡ Semiconductor MSM63184B

• Timers and counter

Watchdog timer ¥ 1

Overflows in 2 sec.

100 Hz timer ¥ 1

Measurable in steps of 1/100 sec.

15-bit time base counter ¥ 1

1, 2, 4, 8, 16, 32, 64, and 128 Hz signals can be read

• Shift register

Shift clock : 1x or 1/2x system clock; external clock
Data length : 8 bits

• Interrupt sources

External interrupt : 3
Internal interrupt : 7 (watchdog timer interrupt is a nonmask-

able interrupt)

• Operating voltage

When backup used : 0.9 to 2.7 V

(Low-speed clock operating)

1.2 to 2.7 V
(Operating frequency: 300 to 500 kHz)

1.5 to 2.7 V
(Operating frequency: 200 kHz to 1 MHz)

When backup not used : 1.8 to 5.5 V

(Operating frequency: 300 to 500 kHz)

2.2 to 5.5 V
(Operating frequency: 300 kHz to 1 MHz)

2.7 to 5.5 V
(Operating frequency: 200 kHz to 2 MHz)

• Package:
128-pin plastic QFP (QFP128-P-1420-0.50-K) : (Product name: MSM63184B-xxxGS-K)
Chip : (Product name: MSM63184B-xxx)

xxx indicates a code number.

3/29

¡ Semiconductor MSM63184B

BLOCK DIAGRAM

An asterisk (*) indicates the port secondary function. indicates that the power is supplied
to the circuits corresponding to the signal names inside from V
interface).

nX-4/250

L

TIMING
CON­TROL

CBR

EBR

H

YX

RA

PC

A

ROM
8KW

(power supply for

DDI

STACK
CAL: 8-level
REG: 16-level

RESET

TST1
TST2

XT0

XT1
OSC0
OSC1

TBCCLK*

HSCLK*

SP

RSP

RST

TST

OSC

ALU

INSTRUCTION
DECODER

INT
4

INT

1

INT

1

CG

MIE

IR

RAM

640N

INT184

TBC

BLD

100HzTC

WDT

Z

BUS
CON­TROL

DATA BUS

EXTMEM

INT

1

SFT

BUZZER

INT

1

INPUT

PORT

OUTPUT

PORT

D0-7*
A0-15*

RD*

WR*

SIN*
SOUT*
SCLK*

BD
BDB

P0.0-P0.3
P1.0-P1.3

P4.0-P4.3
P5.0-P5.3
P6.0-P6.3
P7.0-P7.3

V

V
V
V
V
V

V

DDH

V

DD

CB1
CB2

DD1

DD2

DD3

DD4

DD5

C1
C2

DDL

BACKUP

BIAS

LCLK*

FRAME*

INT
2

I/O
PORT

LCD

&

DSPR

P8.0-P8.3

P9.0-P9.3

PA.0-PA.3

PD.0-PD.3

PE.0-PE.3

COM1-16
SEG0-39

V

DDI

V

SS

4/29

¡ Semiconductor MSM63184B

PIN CONFIGURATION (TOP VIEW)

SEG37
SEG36
SEG35
SEG34
SEG33
SEG32
SEG31
SEG30
SEG29
SEG28
SEG27
SEG26
SEG25
SEG24
SEG23
SEG22
SEG21
SEG20
SEG19
SEG18
SEG17
SEG16
SEG15
SEG14
SEG13
SEG12
SEG11
SEG10

SEG9
SEG8
SEG7
SEG6
SEG5
SEG4
SEG3
SEG2
SEG1
SEG0

1

1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38

SEG38

SEG39

COM16

128

127

126

COM15

COM14

COM13

125

124

123

COM12

COM11

COM10

122

121

120

COM9

COM8

119

118

COM7

COM6

117

116

COM5

COM4

115

114

COM3

COM2

113

112

DDI

COM1

V

111

110

BDBBDP7.0

P7.1

109

108

107

106

P7.2

P7.3

105

104

(NC)

103

102
101
100

99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
83
82
81
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65

(NC)
P6.0
P6.1
P6.2
P6.3
P1.0
P1.1
P1.2
P1.3
PA.0
PA.1
PA.2
PA.3
P9.0
P9.1
P9.2
P9.3
P8.0
P8.1
P8.2
P8.3
PE.0
PE.1
PE.2
PE.3
PD.0
PD.1
PD.2
PD.3
P0.0
P0.1
P0.2
P0.3
P4.0
P4.1
P4.2
P4.3
P5.0

39404142434445464748495051525354555657585960616263

SS

DD1VDD2VDD3VDD4VDD5

V

(NC)

V

C1

C2

DDH

V

CB1

CB2

DD

V

(NC)

DDL

V

OSC1

OSC0

XT1

XT0

RESET

TST2

TST1

P5.3

P5.2

P5.1

128-Pin Plastic QFP

Note: Pins marked as (NC) are no-connection pins which are left open.

64

(NC)

5/29

¡ Semiconductor MSM63184B

PAD CONFIGURATION

Pad Layout

97 P6.0

96 P6.1

95 P6.2

94 P6.3

93 P1.0

92 P1.1

91 P1.2

90 P1.3

89 PA.0

88 PA.1

87 PA.2

86 PA.3

85 P9.0

84 P9.1

83 P9.2

82 P9.3

81 P8.0

80 P8.1

79 P8.2

78 P8.3

77 PE.0

76 PE.1

75 PE.2

74 PE.3

73 PD.0

72 PD.1

71 PD.2

70 PD.3

69 P0.0

68 P0.1

67 P0.2

66 P0.3

65 P4.0

64 P4.1

63 P4.2

62 P4.3

61 P5.0

P7.3 98
P7.2 99
P7.1 100
P7.0 101

BD 102

BDB 103

104

V

DDI

COM1 105
COM2 106
COM3 107
COM4 108
COM5 109
COM6 110
COM7 111
COM8 112

COM9 113
COM10 114
COM11 115
COM12 116
COM13 117
COM14 118
COM15 119
COM16 120

SEG39 121
SEG38 122
SEG37 123

SEG36 1

SEG35 2

SEG34 3

SEG33 4

SEG32 5

SEG31 6

SEG30 7

SEG29 8

SEG28 9

SEG27 10

SEG26 11

SEG25 12

SEG24 13

SEG23 14

SEG22 15

SEG21 16

SEG20 17

SEG19 18

SEG18 19

SEG17 20

SEG16 21

SEG15 22

SEG14 23

SEG13 24

SEG9 28

SEG12 25

SEG11 26

SEG10 27

SEG8 29

SEG7 30

SEG6 31

SEG5 32

SEG4 33

SEG3 34

SEG2 35

SEG1 36

60 P5.1
59 P5.2
58 P5.3
57 TST1
56 TST2
55 XT0
54 XT1
53 RESET
52 OSC0
51 OSC1
50 V
49 V
48 CB2
47 CB1
46 V
45 C2
44 C1
43 V
42 V
41 V
40 V
39 V
38 V

SEG0 37

DDL
DD

DDH

DD5
DD4
DD3
DD2
DD1
SS

Y

X

Chip Size : 5.35 mm ¥ 4.66 mm
Chip Thickness : 350 mm (typ.)
Coordinate Origin : Chip center
Pad Hole Size : 100 mm ¥ 100 mm
Pad Size : 110 mm ¥ 110 mm
Minimum Pad Pitch : 140 mm

Note: The chip substrate voltage is VSS.

6/29

¡ Semiconductor MSM63184B

Pad Coordinates

Pad No.

Pad

Name

X (µm) Y (µm)

1 SEG36 –2520 –2135

SEG35

2 –2380

SEG34

3 –2240

SEG33

4 –2100

SEG32

5 –1960

SEG31

6 –1820

SEG30

7 –1680

SEG29

8 –1540

SEG28

9 –1400

SEG27

10 –1260

SEG26

11 –1120

SEG25

12 –980

SEG24

13 –840

SEG23

14 –700

SEG22

15 –560

SEG21

16 –420

SEG20

17 –280

SEG19

18 –140

SEG18

19 0

SEG17

20 140

SEG16

21 280

SEG15

22 420
23 SEG14 560
24 SEG13 700
25 SEG12 840
26 SEG11 980
27 SEG10 1120
28 SEG9 1260
29 SEG8 1400
30 SEG7 1540
31 SEG6 1680
32 SEG5 1820
33 SEG4 1960
34 SEG3 2100
35 SEG2 2240
36 SEG1 2380

38 V
39 V
40 V
41 V

SS

DD1

DD2

DD3

2530
2530
2530
2530

Pad No.

42
–2135 2530 2135
–2135 2530 2135
–2135 2530 2135
–2135 2530 2135
–2135 2530 2135
–2135 2530 2135
–2135 2530 2135
–2135 2530 2135
–2135 2530 2135
–2135 2530 2135
–2135 2530 2135
–2135 2530 2135
–2135 2530 2135
–2135 2530
–2135 2530
–2135 2530
–2135 2530
–2135 2530
–2135
–2135
–2135
–2135
–2135
–2135
–2135
–2135
–2135
–2135
–2135
–2135
–2135
–2135
–2135
–2135
–2135
–2135
–1665
–1515
–1365
–1215

43

44

45

46

47

48

49

50

51

52

53

54

55

56

57

58

59

60

61

62

63

64

65

66

67

68

69

70

71

72

73

74

75

76

77

78

79

80

81

82

Pad

Name

V
V

X (µm) Y (µm)

DD4

DD5

2530 –1065

–915
C1 –765
C2 –615

V

DDH

–465

CB1 –315
CB2 –165
V

DD

V

DDL

–15

135
OSC1 285
OSC0 435

RESET 585

XT1 735

XT0 885
TST2 1030
TST1 1170

P5.3 1328
P5.2 1468
P5.1 1608
P5.0 2520
P4.3 2380
P4.2 2240
P4.1 2100
P4.0 1960
P0.3 1820
P0.2 1680
P0.1 1540

P0.0 1400
PD.3 1260
PD.2 1120
PD.1 980
PD.0 840

PE.3 700

PE.2 560

PE.1 420

PE.0 280

P8.3 140

P8.2 0

P8.1 –140

P8.0 –280

2135
2135
2135
2135
2135
2135
2135
2135
2135
2135
2135
2135
2135
2135
2135
2135
2135
2135
2135
2135
2135

P9.3 –420 2135

Pad No.

83
84
85
86
87
88
89
90
91
92
93
94
95
96
97
98

99
100
101
102
103
104
105
106
107
108
109
110
111
112
113
114
115
116
117
118
119
120
121
122
123

Pad

Name

X (µm) Y (µm)

P9.2 –560 2135
P9.1 –700
P9.0 –840
PA.3
PA.2
PA.1
PA.0
P1.3
P1.2
P1.1
P1.0
P6.3
P6.2
P6.1
P6.0
P7.3 1607
P7.2 1467
P7.1 1327
P7.0 1187

BD 1029
BDB 889
V

DDI

COM1 609
COM2 469
COM3 329
COM4 189
COM5 49
COM6 –91
COM7 –231
COM8 –371

COM9 –511
COM10
COM11
COM12
COM13
COM14
COM15
COM16

SEG38 –1771
SEG37 –1970

–980
–1120
–1260
–1400
–1540
–1680
–1820
–1960
–2100
–2240
–2380
–2520
–2530
–2530
–2530
–2530
–2530
–2530
–2530
–2530
–2530
–2530
–2530
–2530
–2530
–2530
–2530
–2530
–2530
–2530
–2530
–2530
–2530
–2530
–2530
–2530
–2530
–2530

2135

749

–651
–791

–931
–1071
–1211
–135137 SEG0 2520
–1491
–1631SEG39

7/29

¡ Semiconductor MSM63184B

PIN DESCRIPTIONS

The basic functions of each pin of the MSM63184B are described in Table 1.
A symbol with a slash (/) denotes a pin that has a secondary function.
Refer to Table 2 for secondary functions.
For type, "—" denotes a power supply pin, "I" an input pin, "O" an output pin, and "I/O" an input­output pin.

Table 1 Pin Descriptions (Basic Functions)

Function Symbol Pin Type

V
V
V
V
V

V
V

DD

SS

DD1

DD2

DD3

DD4

DD5

52 —
40 —
41
42
43 —
44
45

C1 46 —

Power

Supply

C2 47 —

V

V

V

DDI

DDL

DDH

110 —

53 —

48 —

CB1 49 —
CB2 50 —

XT0 58 I

XT1 57 O

Oscillation

OSC0 55 I

OSC1 54 O

TST1 60 I

Test

TST2 59 I

Reset RESET 56 I

Description

Positive power supply
Negative power supply
Power supply pins for LCD bias (internally generated).
Capacitors (0.1 mF) should be connected between these pins and

.

V

SS

Capacitor connection pins for LCD bias generation.
A capacitor (0.1 mF) should be connected between C1 and C2.
Positive power supply pin for external interface
(power supply for input, output, and input-output ports)
Positive power supply pin for internal logic (internally generated).
A capacitor (0.1 mF) should be connected between this pin and V

SS

Voltage multiplier pin for power supply backup (internally generated)
A capacitor (1.0 mF) should be connected between this pin and VSS.
Pins to connect a capacitor for voltage multiplier.
A capacitor (1.0 mF) should be connected between CB1 and CB2.
Low-speed clock oscillation pins.
A 32.768 kHz crystal should be connected between XT0 and XT1,
and C

(5 to 25 pF) should be connected between XT0 and VSS.

G

High-speed clock oscillation pins.
A ceramic resonator and capacitors (C
oscillation resistor (R

) should be connected to these pins.

OS

, CL1) or external

L0

Input pins for testing.
A pull-down resistor is internally connected to these pins.
The user cannot use these pins.
Reset input pin.
Setting this pin to "H" level puts this device into a reset state.
Then, setting this pin to "L" level starts executing an instruction
from address 0000H.
A pull-down resistor is internally connected to this pin.

.

Buzzer

BD 108 O

BDB 109 O

Buzzer output pin (non-inverted output)
Buzzer output pin (inverted output)

8/29

¡ Semiconductor MSM63184B

Table 1 Pin Descriptions (Basic Functions) (continued)

Function Symbol

P0.0/INT5
P0.1/INT5
P0.2/INT5
P0.3/INT5
P1.0/INT5
P1.1/INT5
P1.2/INT5
P1.3/INT5

P4.0/A0
P4.1/A1
P4.2/A2

Port

P4.3/A3
P5.0/A4
P5.1/A5
P5.2/A6
P5.3/A7
P6.0/A8

P6.1/A9
P6.2/A10
P6.3/A11
P7.0/A12
P7.1/A13
P7.2/A14
P7.3/A15

Pin

73
72
71
70
97
96
95
94
69
68
67
66
65
63
62

61
101
100

99

98
107
106
105
104

Type Description

4-bit input ports.
Pull-up resistor input, pull-down resistor input, or

I

high-impedance input is selectable for each bit.

I

4-bit output ports.
P-channel open drain output, N-channel open drain output,

O

CMOS output, or high-impedance output is selectable for each
bit.

O

O

O

9/29

¡ Semiconductor MSM63184B

Table 1 Pin Descriptions (Basic Functions) (continued)

Function Symbol

P8.0/RD

P8.1/WR

P8.2

P8.3/INT4

P9.0/D0
P9.1/D1
P9.2/D2
P9.3/D3
PA.0/D4

Port

PA.1/D5
PA.2/D6
PA.3/D7

PD.0/FRAME

PD.1/LCLK

PD.2/TBCCLK

PD.3/HSCLK

PE.0/SIN
PE.1/SOUT
PE.2/SCLK

PE.3/INT2

Pin

85
84
83
82
89
88
87
86
93
92
91
90
77
76
75
74
81
80
79
78

Type Description

4-bit input-output ports.
In input mode, pull-up resistor input, pull-down resistor input,

I/O

or high-impedance input is selectable for each bit.
In output mode, P-channel open drain output, N-channel open
drain output, CMOS output, or high-impedance output is
selectable for each bit.

I/O

I/O

I/O

I/O

10/29

¡ Semiconductor MSM63184B

Table 1 Pin Descriptions (Basic Functions) (continued)

Function Symbol

COM1
COM2
COM3
COM4
COM5
COM6
COM7
COM8

COM9
COM10
COM11
COM12
COM13
COM14
COM15
COM16

SEG0
SEG1
SEG2
SEG3

LCD

SEG4
SEG5
SEG6
SEG7
SEG8

SEG9
SEG10
SEG11
SEG12
SEG13
SEG14
SEG15
SEG16
SEG17
SEG18
SEG19
SEG20
SEG21
SEG22
SEG23
SEG24

Pin Type

111
112
113
114
115
116
117
118
119
120
121
122
123
124
125
126

38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
16
15
14

O

O

Description

LCD common signal output pins

LCD segment signal output pins

11/29

¡ Semiconductor MSM63184B

Table 1 Pin Descriptions (Basic Functions) (continued)

Function Symbol

SEG25
SEG26
SEG27
SEG28
SEG29
SEG30
SEG31

LCD

SEG32
SEG33
SEG34
SEG35
SEG36
SEG37
SEG38
SEG39

Pin Type

13
12
11
10

9
8
7
6
5
4
3
2

1
128
127

O

Description

LCD segment signal output pins

12/29

¡ Semiconductor MSM63184B

Table 2 shows the secondary functions of each pin of the MSM63184B.

Table 2 Pin Descriptions (Secondary Functions)

Function Symbol

PE.3/INT2

P8.3/INT4

P0.0/INT5

External

Interrupt

LCD

External
Expansion
Oscillation

Output

Shift

Register

P0.1/INT5
P0.2/INT5
P0.3/INT5
P1.0/INT5
P1.1/INT5
P1.2/INT5
P1.3/INT5

PD.0/FRAME

PD.1/LCLK

PD.2/TBCCLK

PD.3/HSCLK

PE.0/SIN

PE.2/SCLK

Pin

78

82

73
72
71
70
97
96
95
94

77

76
75

74
81
80

79

Type Description

External 2 interrupt input pins.

I

The change of input signal level causes an interrupt to occur.
External 4 interrupt input pins.

I

The change of input signal level causes an interrupt to occur.
External 5 interrupt input pins.
The change of input signal level causes an interrupt to occur.
The Port 0 Interrupt Enable register (P0IE) and Port 1 Interrupt
Enable register (P1IE) enable or disable an interrupt for each bit.

I

Frame output pin for LCD driver expansion

O

Clock output pin for LCD driver expansion

O

Low-speed oscillation clock output pin

O

High-speed oscillation clock output pin

O

Shift register receive data input pin

I

Shift register transmit data output pinPE.1/SOUT

O

Shift register clock input-output pin.

O

Clock output when this device is used as a master processor.
Clock input when this device is used as a slave processor.

13/29

¡ Semiconductor MSM63184B

Table 2 Pin Descriptions (Secondary Functions) (continued)

Function Symbol

P4.0/A0
P4.1/A1
P4.2/A2
P4.3/A3
P5.0/A4
P5.1/A5
P5.2/A6
P5.3/A7
P6.0/A8
P6.1/A9

P6.2/A10

External

Memory

P6.3/A11
P7.0/A12
P7.1/A13
P7.2/A14
P7.3/A15

P9.0/D0
P9.1/D1
P9.2/D2
P9.3/D3
PA.0/D4
PA.1/D5
PA.2/D6
PA.3/D7
P8.0/RD

P8.1/WR

Pin

69
68
67
66
65
63
62

61
101
100

99

98
107
106
105
104

89

88

87

86

93

92

91

90

85

84

Type

Address output bus for external memory

O

Data bus for external memory

I/O

O Read signal output pin for external memory (negative logic)
O Write signal output pin for external memory (negative logic)

Description

14/29

¡ Semiconductor MSM63184B

ABSOLUTE MAXIMUM RATINGS

= 0 V)

(V

SS

Parameter Symbol Condition Rating Unit

Power Supply Voltage 6

V
V
V
V

V

V

OUT1

OUT2

OUT3

OUT4

OUT5

OUT6

OUT7

OUT8

T

DD1

DD2

DD3

DD4

DD5

DD

DDI

DDH

DDL

IN1

IN2

STG

DDI

DD1

DD2

DD3

DD4

DD5

DDI

DDH

–0.3 to +1.6Power Supply Voltage 1 Ta = 25°CV
–0.3 to +2.9Power Supply Voltage 2 Ta = 25°C
–0.3 to +4.2Power Supply Voltage 3 Ta = 25°C
–0.3 to +5.5Power Supply Voltage 4 Ta = 25°C
–0.3 to +6.8Power Supply Voltage 5 Ta = 25°C

V
V
V
V

V
–0.3 to +6.0Ta = 25°C V
–0.3 to +6.0Power Supply Voltage 7 Ta = 25°CV
–0.3 to +6.0Power Supply Voltage 8 Ta = 25°C
–0.3 to +6.0Power Supply Voltage 9 Ta = 25°CV

–0.3 to V

Input, Ta = 25°CV
Output, Ta = 25°CV
Output, Ta = 25°CV
Output, Ta = 25°CV
Output, Ta = 25°CV
Output, Ta = 25°CV

–0.3 to V
–0.3 to V
–0.3 to V
–0.3 to V
–0.3 to V
–0.3 to V

–0.3 to V

Output, Ta = 25°CV

Output, Ta = 25°CV

–0.3 to V

–0.3 to V

DD

DDI

DD1

DD2

DD3

DD4

DD5

DD

DDI

DDH

+ 0.3Input Voltage 1 VDD Input, Ta = 25°CV

+ 0.3Input Voltage 2 V

+ 0.3Output Voltage 1 V
+ 0.3Output Voltage 2 V
+ 0.3Output Voltage 3 V
+ 0.3Output Voltage 4 V
+ 0.3Output Voltage 5 V

+ 0.3Output Voltage 6 VDD Output, Ta = 25°CV

+ 0.3Output Voltage 7 V

+ 0.3Output Voltage 8 V

–55 to +150Storage Temperature —

V
V
V
V
V
V
V
V
V
V
V
V
V

°C

15/29

¡ Semiconductor MSM63184B

RECOMMENDED OPERATING CONDITIONS

• When backup is used

(V

= 0 V)

SS

Parameter Symbol Condition Range Unit

Operating Temperature T

Operating Voltage

Crystal Oscillation Frequency f

Ceramic Oscillation Frequency

External RC Oscillator Resistance

• When backup is not used

op

V

DD

V

DDI

XT

—
— 0.9 to 2.7 V
—
—

VDD = 1.2 to 2.7 V

f

CM

VDD = 1.2 to 2.7 V

R

OS

–20 to +70 °C

0.9 to 5.5 V
30 to 35 kHz

300k to 500k

Hz

200k to 1MVDD = 1.5 to 2.7 V

100 to 300

kW

50 to 300VDD = 1.5 to 2.7 V

Parameter Symbol Condition Range Unit

Operating Temperature T

Operating Voltage

V

Crystal Oscillation Frequency f

Ceramic Oscillation Frequency

External RC Oscillator Resistance

(V

= 0 V)

SS

–20 to +70 °C

1.8 to 5.5 V
30 to 35 kHz

V

op

DD

DDI

XT

—
— 1.8 to 5.5 V
—
—

300k to 500kVDD = 1.8 to 5.5 V

f

CM

VDD = 2.2 to 5.5 V

300k to 1M

Hz

200k to 2MVDD = 2.7 to 5.5 V

100 to 300VDD = 1.8 to 5.5 V

R

OS

VDD = 2.2 to 5.5 V

50 to 300

kW

30 to 300VDD = 2.7 to 5.5 V

16/29

¡ Semiconductor MSM63184B

ELECTRICAL CHARACTERISTICS

DC Characteristics

Parameter Symbol Condition

Voltage

DD2

Voltage Temperature Deviation DV

DD2

V

Voltage V

DD1

V

Voltage V

DD3

V

Voltage V

DD4

V

Voltage V

DD5

Voltage

V

DDH

(Backup used)

V

Voltage V

DDL

Crystal Oscillation Hold Voltage

External Crystal Oscillator Capacitance
Internal Crystal Oscillator Capacitance

External Ceramic Oscillator
Capacitance

POR Voltage V

Non-POR Voltage V

(V

V

V

V

T

C

DD

DD2

DD2

DD1

DD3

DD4

DD5

DDH

DDL

STA

HOLD

STOP

C

G

C

D

L0, 1

OS

POR1

POR2

= V

= 0.9 to 5.5 V, VSS = 0 V, Ta = –20 to +70°C unless otherwise specified)

DDI

Max.Typ.Min.

1/5 bias, 1/4 bias

(Ta = 25°C)

—

1/5 bias, 1/4 bias V

1/5 bias

1/4 bias (connect

V

DD3

and V

DD2

)

1/5 bias
1/4 bias
1/5 bias
1/4 bias

Typ.– 0.2
Typ.– 0.3

Typ.– 0.2

Typ.– 0.4
Typ.– 0.3
Typ.– 0.5
Typ.– 0.4

1/2 ¥ V
3/2 ¥ V

V

DD2

2 ¥ V
3/2 ¥ V
5/2 ¥ V

2 ¥ V

DD2

DD2

DD2

DD2

DD2

DD2

1.91.81.7V

—–4—V
Typ.+ 0.2
Typ.+ 0.3

Typ.+ 0.2

Typ.+ 0.4
Typ.+ 0.3
Typ.+ 0.5
Typ.+ 0.4

High-speed clock oscillation

stopped

V

DD

= 1.5 V

3.0—2.8 V

High-speed clock oscillation

(Ceramic oscillation, 1 MHz)

V

= 1.5 V

DD

High-speed clock

oscillation stopped

High-speed clock oscillation

(V

= 1.2 to 5.5 V)

DD

Oscillation start time:

within 5 seconds

Backup V

2.7—2.0

2.01.51.0

5.5—1.2

——1.0Crystal Oscillation Start Voltage V

——0.9

——1.7Backup not used V

—ms
—pF
—pF

5.0—0.1Crystal Oscillation Stop Detect Time
25—5
302520

CSA2.00MG (Murata

MFG.-make) used

V

= 3.0 V

DD

—pF

V

= 1.5 V V

DD

= 3.0 V V

DD

V

= 1.5 V V

DD

= 3.0 V V

DD

—30—

16128Internal RC Oscillator Capacitance C

0.4—0.0

0.7—0.0V

1.5—1.2

3.0—2.0V

Unit

V

mV/°C

V

V

V

V

V

V

V

pF

Mea­suring
Circuit

1

Notes: 1. "T

reset occurs.

2. "POR" denotes Power On Reset.

3. "V
up to VDD.

4. "V
again rises up to VDD.

" indicates that if the crystal oscillator stops over the value of T

STOP

" indicates that POR occurs when VDD falls from VDD to V

POR1

" indicates that POR does not occur when VDD falls from VDD to V

POR2

, the system

STOP

and again rises

POR1

POR2

and

17/29

¡ Semiconductor MSM63184B

DC Characteristics (continued)

• When backup is used

(VDD = V

= 1.5 V, VSS = 0 V, Ta = –20 to +70°C unless otherwise specified)

DDI

Parameter Symbol Condition

CPU is in HALT state.

(High-speed clock oscillation

I

DD1

stopped)

CPU is in HALT state.

LCD is in Power Down mode.

I

DD2

(High-speed clock oscillation

stopped)

CPU is in operating state.

(High-speed clock oscillation

I

DD3

stopped)

CPU is in operation at

I

DD4

high-speed oscillation

(RC oscillation, R

OS

CPU is in operation at

I

DD5

high-speed oscillation

(Ceramic oscillation, 1 MHz)

= 51 kW)

Mea-

Max.Typ.Min.

Unit

suring

Circuit

357.0—Supply Current 1

305.5—Supply Current 2

mA

mA

1

4024—Supply Current 3

800600—Supply Current 4

900700—Supply Current 5

mA

mA

mA

• When backup is not used

Parameter Symbol Condition

(VDD = V

= 3.0 V, VSS = 0 V, Ta = –20 to +70°C unless otherwise specified)

DDI

CPU is in HALT state.

(High-speed clock oscillation

I

DD1

stopped)

CPU is in HALT state.

LCD is in Power Down mode.

I

DD2

(High-speed clock oscillation

stopped)

CPU is in operating state.

(High-speed clock oscillation

I

DD3

stopped)

CPU is in operation at

I

DD4

high-speed oscillation

(RC oscillation, R

CPU is in operation at

I

DD5

high-speed oscillation

(Ceramic oscillation, 2 MHz)

= 51 kW)

OS

Mea-

Max.Typ.Min.

Unit

suring

Circuit

203.0—Supply Current 1

182.0—Supply Current 2

mA

mA

1

2011—Supply Current 3

600450—Supply Current 4

1000850—Supply Current 5

mA

mA

mA

18/29

¡ Semiconductor MSM63184B

DC Characteristics (continued)

(VDD = V

V

DDI

DD4

= V
= 4.4 V, V

Parameter Symbol Condition

Output Current 1
(P4.0 to P4.3)
(P5.0 to P5.3)

I

OH1

V

OH1

= V

– 0.5 V –1.0 mA

DDI

(P6.0 to P6.3)

······

(PD.0 to PD.3)

I

OL1

V

= 0.5 V 5.0 mA

OL1

(PE.0 to PE.3)
Output Current 2

(BD, BDB)

Output Current 3
(SEG0 to SEG39)
(COM1 to COM16)

Output Current 4
(OSC1)

I

OH2

I

OL2

I

OH3

I

OHM3

I

OHM3S

I

OMH3

I

OMH3S

I

OML3

OML3S

OLM3

OLM3S

OL3

I

OH4R

I

OL4R

I

OH4C

I

OL4C

V

= VDD – 0.7 V –2.0 mA

OH2

V

= 0.7 V 6.0 mA

OL2

V

= V

OH3

V

OHM3

V

OHM3S

V

OMH3

V

OMH3S

V

OML3

V

OML3S

V

OLM3

V

OLM3S

= VSS + 0.2 V (VSS level)

V

OL3

V

OH4R

= V

= V

= V

= V

= V

= V

= V

= V

= V

– 0.2 V (V

DD5

+ 0.2 V (V

DD4

DD4

+ 0.2 V (V

DD3

DD3

+ 0.2 V (V

DD2

DD2

+ 0.2 V (V

DD1

DD1

– 0.5 V

DDH

– 0.2 V (V

– 0.2 V (V

– 0.2 V (V

– 0.2 V (V

(RC oscillation)
V

= 0.5 V

OL4R

(RC oscillation)
V

= V

OH4C

DDH

– 0.5 V
(ceramic oscillation)
V

= 0.5 V

OL4C

(ceramic oscillation)

Output Leakage
(P4.0 to P4.3)

I

OOH

VOH = V

DDI

(P5.0 to P5.3)
(P6.0 to P6.3)

I

OOL

VOL = V

SS

(PE.0 to PE.3)

= 3.0 V, VSS = 0 V, V

DDH

= 5.5 V, Ta = –20 to +70°C unless otherwise specified)

DD5

V

= 1.5 V

DDI

= 3.0 V

V

DDI

= 5.0 V

V

DDI

= 1.5 V

V

DDI

V

= 3.0 V

DDI

= 5.0 V

V

DDI

V

= 1.5 V

DD

= 3.0 V

V

DD

V

= V

DD

DDH

V

= 1.5 V

DD

= 3.0 V

V

DD

= V

V

DD

DDH

level)

DD5

level)

DD4

level)

DD4

level)

DD3

level)

DD3

level)

DD2

level)

DD2

level)

DD1

level)

DD1

V

= V

DD

DDH

= V

V

DD

DDH

DDH

= V

V

DD

DDH

DDH

= V

V

DD

DDH

DDH

= V

V

DD

DDH

= 1.1 V, V

DD1

Min.

–2.0
–5.0
–8.0

0.2

1.0

1.5
–2.5
–6.0

= 5.0 V

–9.0

0.4

2.0

= 5.0 V

3.0

—

4

—

4

—

4

—

4

—

4

= 3.0 V

–2.5

= 5.0 V –1.0 mA–2.0–3.5
= 3.0 V
= 5.0 V 3.5 mA2.01.0
= 3.0 V
= 5.0 V –100 mA–280–450
= 3.0 V
= 5.0 V 450 mA200100

—

–0.3

Typ.

–1.2
–3.0
–4.0

1.2

3.0

4.0
–1.3
–4.0
–5.5

1.3

4.0

5.5

—
—
—
—
—
—
—
—
—
—

–1.5

—

—

= 2.2 V, V

DD2

Max.

–0.2 mA

–1.5 mA

–0.4 mA

–3.0 mA

–0.75 mA

–60 mA–180–300VDD = V

300 mA12060VDD = V

DD3

Unit

2.0 mA

8.0 mA

2.5 mA

9.0 mA
–4 mA
— mA
–4

mA

—

mA
mA

–4

mA

—
–4

mAI

—

mAI

–4

mAI
mAI

—

2.5 mA1.50.75VDD = V

0.3 mA

— mA

= 3.3 V,

Mea-

suring

Circuit

2

19/29

¡ Semiconductor MSM63184B

DC Characteristics (continued)

(VDD = V

V

DDI

DD4

= V
= 4.4 V, V

Parameter Symbol Condition

Input Current 1

V

= V

IH1

(P0.0 to P0.3)
(P1.0 to P1.3)

I

IH1

(when pulled down)

DDI

(P8.0 to P8.3)
(P9.0 to P9.3)

···

(PE.0 to PE.3)

Input Current 2
(OSC0)

I

I

IH1Z

I

IL1Z

I

I

IH2R

I

IL2R

I

IH2C

I

IL2C

V

= V

IL1

IL2

IL1

(when pulled up)

V

IH1

V

= V

IL1

V

= V

IL2

(when pulled up)
V

IH2R

V

IL2R

V

IH2C

(ceramic oscillation)
V

IL2C

(ceramic oscillation)

SS

= V

(in a high impedance state) 1.0 mA—0.0

DDI

(in a high impedance state) 0.0 mA—–1.0

SS

SS

= V

(RC oscillation) 1.0 mA—0.0

DDH

= VSS (RC oscillation) 0.0 mA—–1.0

= V

DDH

= V

SS

Input Current 3
(RESET)

I

I

IH3

IL3

V

= V

IH3

DD

V

= V

IL3

SS

Input Current 4
(TST1, TST2)

I

I

IH4

IL4

V

= V

IH4

DD

V

= V

IL4

SS

= 3.0 V, VSS = 0 V, V

DDH

= 5.5 V, Ta = –20 to +70°C unless otherwise specified)

DD5

V

= 1.5 V

DDI

V

= 3.0 V

DDI

V

= 5.0 V

DDI

= 1.5 V

V

DDI

V

= 3.0 V

DDI

V

= 5.0 V

DDI

= V

V

DD

DDH

V

= V

DD

DDH

V

= V

DD

DDH

= V

V

DD

DDH

= V

V

DD

DDH

V

= V

DD

DDH

V

= 1.5 V

DD

V

= 3.0 V 600 mA350150

DD

V

= V

DD

DDH

V

= 3.0 V 1.5 mA1.00.5

DD

V

= V

DD

DDH

= 1.1 V, V

DD1

Min.

2
30
70

–30
–180
–600

= 3.0 V
= 5.0 V

= 3.0 V
= 5.0 V
= 3.0 V
= 5.0 V

–200
–600

0.1

0.75
–1.0
–3.0

10

= 5.0 V 2.0 mA1.00.5

= 5.0 V 4.0 mA2.51.25

Typ.

10

90
250
–10
–90

–250

–110
–350

0.5

1.5
–0.5
–1.5

50

= 2.2 V, V

DD2

Max.

180 mA
600 mA

–30 mA
–70 mA

–30 mA

–150 mA

–0.1 mA

–0.75 mA

300 mA15050VDD = 1.5 V

Unit

30 mA

–2 mA

1.0 mA

3.0 mA

80 mA

0.0 mA—–1.0

0.0 mA—–1.0

= 3.3 V,

DD3

Mea-

suring

Circuit

3

20/29

¡ Semiconductor MSM63184B

DC Characteristics (continued)

Parameter Symbol Condition

Input Voltage 1
(P0.0 to P0.3)
(P1.0 to P1.3)
(P8.0 to P8.3)
(P9.0 to P9.3)

······ ···

(PE.0 to PE.3)
Input Voltage 2

(OSC0)

Input Voltage 3
(RESET, TST1, TST2)

Hysteresis Width 1
(P0.0 to P0.3)
(P1.0 to P1.3)
(P8.0 to P8.3)

(VDD = V

V

IH1

V

IL1

V

IH2

V

IL2

V

IH3

V

IL3

DV

T1

V

DDI

DD4

= V
= 4.4 V, V

= 3.0 V, VSS = 0 V, V

DDH

= 5.5 V, Ta = –20 to +70°C unless otherwise specified)

DD5

= 1.5 V 1.2 — 1.5 V

V

DDI

V

= 3.0 V 2.4 — 3.0 V

DDI

V

= 5.0 V 4.0 — 5.0 V

DDI

V

= 1.5 V 0.0 — 0.3 V

DDI

V

= 3.0 V 0.0 — 0.6 V

DDI

= 5.0 V 0.0 — 1.0 V

V

DDI

VDD = V
VDD = V
VDD = V
VDD = V

V

= 3.0 V 2.4 — 3.0 V

DDH

= 5.0 V 4.0 — 5.0 V

DDH

= 3.0 V 0.0 — 0.6 V

DDH

= 5.0 V 0.0 — 1.0 V

DDH

= 1.5 V 1.35 — 1.5 V

DD

= 1.1 V, V

DD1

DD2

VDD = 3.0 V 2.4 — 3.0 V

= V

V

DD

= 5.0 V 4.0 — 5.0 V

DDH

VDD = 1.5 V 0.0 — 0.15 V
VDD = 3.0 V 0.0 — 0.6 V

V

DD

= V

V

V

= 5.0 V 0.0 — 1.0 V

DDH

= 1.5 V 0.05 0.1 0.3 V

DDI

= 3.0 V 0.2 0.5 1.0 V

DDI

= 2.2 V, V

Max.Typ.Min.

DD3

Unit

= 3.3 V,

Mea-

suring

Circuit

4

(PE.0 to PE.3)

Hysteresis Width 2
(RESET, TST1, TST2)

Input Pin Capacitance
(P0.0 to P0.3)
(P1.0 to P1.3)
(P8.0 to P8.3)
(P9.0 to P9.3)

(PD.0 to PD.3)
(PE.0 to PE.3)

DV

C

V

= 5.0 V 0.25 1.0 1.5 V

DDI

VDD = 1.5 V 0.05 0.1 0.3 V
V

T2

V

IN

= 3.0 V 0.2 0.5 1.0 V

DD

DD

= V

= 5.0 V 0.25 1.0 1.5 V

DDH

———5pF

1

21/29

¡ Semiconductor MSM63184B

p

Measuring circuit 1

CB1

C

b12

CB2
C1

C

12

C2

q

OSC0

*1

w

OSC1

Ca, Cb, Cc, Cd, Ce, Cl, C
C

, C

b12

h

C

G

C

L0

C

L1

Ceramic Resonator

C

G

XT0

XT1

V

V

SS

DDVDDIVDD1

A

12

: 0.1 mF

C

a

V

C

V

DD2

b

V

C

c

V

DD3

V

C

d

V

DD4

V

C

V

DD5

e

V

V

DDH

DDL

C

V

C

h

l

V

V

*1 RC Oscillator

32.768 kHz
Crystal

: 1 mF
: 15 pF
: 30 pF
: 30 pF
: CSA2.00MG (2 MHz)
CSB1000J (1 MHz)
(Murata MFG.-make)

R

OS

Ceramic Oscillator

q

w

q

C

L0

Ceramic Resonator

Measuring circuit 2

V

IH

*2

V

IL

C

L1

INPUT OUTPUT

w

V

SS

VDDV

DDIVDD1VDD2VDD3VDD4VDD5VDDH

V

DDL

*2 Input logic circuit to determine the specified measuring conditions.
*3 Measured at the s

ecified output pins.

*3

A

22/29

¡ Semiconductor MSM63184B

Measuring circuit 3

*4

A

Measuring circuit 4

V

IH

*4

INPUT OUTPUT

VSSV

DDVDDIVDD1VDD2VDD3VDD4VDD5VDDH

INPUT OUTPUT

V

DDL

Waveform
Monitoring

V

IL

V

V

SS

DDVDDIVDD1VDD2VDD3VDD4VDD5VDDH

V

DDL

*4 Measured at the specified input pins.

23/29

¡ Semiconductor MSM63184B

AC Characteristics (Serial Interface, Shift Register)

(VDD = 0.9 to 5.5 V, V
specified)

Parameter Symbol Condition Unit

SCLK Input "L" Level
Pulse Width

SCLK Input "H" Level
Pulse Width

SCLK Output Cycle Time

= 1.8 to 5.5 V, VSS = 0 V, V

DDH

t

f

r

t

CWL

t

CWH

CYC

t

CYC1(O)

CPU in operation state at 32 kHz ms30.5 —

CPU in operation at 2 MHz

CYC2(O)

DDR

DS

DH

V

DD

= 5.0 V, Ta = –20 to +70°C unless otherwise

DDI

— ms— 1.0
— ms— 1.0

— ms——

— ms——

V

= 5 V to V

DDI

DD

—SCLK Input Fall Time
—SCLK Input Rise Time t

0.8

0.8

1.8SCLK Input Cycle Time t
—

= V

= 2.7 V to 5.5 V

DDH

Cl = 10 pF ms— 0.4

— ms——
— ms——

—t

—SOUT Output Delay Time t

0.5SIN Input Setup Time t

0.8SIN Input Hold Time t

Max.Typ.Min.

ms——

ms0.5 —

AC characteristics timing
("H" level = 4.0 V, "L" level = 1.0 V)

SCLK (PE.2)

t

DDR

SOUT (PE.1)

t

SIN (PE.0)

t

DS

CYC

5 V (V

DDI

)

0 V (VSS)

t

r

t

CWH

t

DDR

t

f

t

CWL

5 V (V

DDI

)

0 V (VSS)

t

DH

t

DS

5 V (V

DDI

)

0 V (VSS)

24/29

¡ Semiconductor MSM63184B

AC Characteristics (External Memory Interface)

(VDD = 0.9 to 5.5 V, V

= 1.8 to 5.5 V, VSS = 0 V, V

DDH

specified)

(1) Reading from External Memory

(a) When CPU operates at 32.768 kHz

Parameter

Read Cycle Time
RD Output Delay Time
Output Valid Time

External Memory Output Delay Time

(b) When CPU operates at 2 MHz (V

Parameter

Read Cycle Time
RD Output Delay Time
Output Valid Time

External Memory Output Delay Time

Symbol Condition Min. Typ. Max. Unit

t

RC

t

OE

t

OHA

t

DO

= 2.7 to 5.5 V)

DDH

Symbol Condition Min. Typ. Max. Unit

t

RC

t

OE

t

OHA

t

DO

= 5.0 V, Ta = –20 to +70°C unless otherwise

DDI

—
—
—
—

—
—
—
—

—
—
—
—

1.0 ms
—
—
—

61.0 ms
—
—
—

—
—
—
—

—

5.0

5.0

5.0

—
100
100
150

ms
ms
ms

ns
ns
ns

AC characteristics timing
("H" level = 4.0 V, "L" level = 1.0 V)

System clock

P7 - P4

(A15 - A0)

P8.0

(RD)

PA, P9

(D7 - D0)

Port setup value

Port setup value

MOVXB obj, xadr16

MOVXB obj, [RA]

Address output Port setup value

t

OE

S2S1S2S1S2S1

t

RC

5 V (V
0 V (V

5 V (V
0 V (V

t

OHA

5 V (V

Port setup valueInput data

t

DO

0 V (V

DDI
SS

DDI
SS

DDI
SS

)

)

)

)

)

)

25/29

¡ Semiconductor MSM63184B

(2) Writing to External Memory

(a) When CPU operates at 32.768 kHz

Parameter

Write Cycle Time
Address Setup Time
Write Time
Write Recovery Time
Data Setup Time
Data Hold Time

Symbol Condition Min. Typ. Max. Unit

t

t

t
t

WC

t

AS

t

WR

DS

DH

—
—

W

—
—
—
—

—
—
—
—
—
—

61.0 ms

30.5

15.3

15.3

45.8

15.3

—

—

—

—

—

—

ms
ms
ms
ms
ms

(b) When CPU operates at 2 MHz (V

Parameter

Write Cycle Time
Address Setup Time
Write Time
Write Recovery Time
Data Setup Time
Data Hold Time

= 2.7 to 5.5 V)

DDH

Symbol Condition Min. Typ. Max. Unit

t

WC

t

AS

t

W

t

WR

t

DS

t

DH

AC characteristics timing
("H" level = 4.0 V, "L" level = 1.0 V)

MOVXB [RA], obj or MOVXB xadr16, obj

System clock

—
—
—
—
—
—

1.0 ms

0.4

0.2

0.2

0.7

0.2

—
—
—
—
—
—

—

—

—

—

—

—

ms
ms
ms
ms
ms

S2S1S2S1S2S1

t

WC

(A15 - A0)

PA, P9

(D7 - D0)

P8.1

(WR)

Address output Port setup valuePort setup valueP7 - P4

5 V (V
0 V (V

5 V (V

Output data Port setup valuePort setup value

t

DS

t

DH

0 V (V

5 V (V
0 V (V

t

tWt

AS

WR

DDI
SS

DDI
SS

DDI
SS

)

)

)

)

)

)

26/29

¡ Semiconductor MSM63184B

APPLICATION CIRCUITS

•RC oscillation is selected as high-speed

LCD

oscillation.

•Ports are powered from external memory
power source.

•C

is an IC power supply bypass capacitor.

v

•Values of C
C

, and CG, are for reference only.

h

, Cb, Cc, Cd, Ce, Cl, C

a

b12

, C12,

Crystal

32.768 kHz

COM1-16

XT0

C

G

5 to

25 pF

C

1.5 V

v

C

C

l

C

e

C

d

C

c

C

b

C

a

C

h

0.1 mF

b12

1.0 mF

1.0 mF

0.1 mF

0.1 mF

0.1 mF

0.1 mF

0.1 mF

0.1 mF

XT1
V

DDH

V

DD

CB1
CB2

V

DDL

V

DD5

V

DD4

V

DD3

V

DD2

V

DD1

MSM63184B

C1

C

12

Push SW

0.1 mF
C2

SEG0-39

OSC0

OSC1

P5.3
P5.2
P5.1
P5.0
P4.3
P4.2
P4.1
P4.0

P1.3
P1.2
P1.1
P1.0
P0.3
P0.2
P0.1
P0.0

R

OS

SW Matrix
(8 ¥ 8)

RESET

Buzzer

Open

TST1
TST2

V

DDI

BD

Note: V

Be sure to connect the V
device or to the positive power supply pin of the external memory.

V

BDB

P4-7

A15-0

DD

External

V

SS

P9, PA

P8.0
P8.1

is the power supply pin for the input, output, and input-output ports.

DDI

pin either to the positive power supply pin (VDD) of this

DDI

D7-0

RD
WR

Memory

(64K ¥ 8 bits)

V

SS

Application Circuit Example with Power Supply Backup

5.0 V

27/29

¡ Semiconductor MSM63184B

APPLICATION CIRCUITS (continued)

•Ceramic oscillation is selected as high-speed

LCD

oscillation.

•Ports, external memory, and IC share their
power supply.

•C

is an IC power supply bypass capacitor.

v

•Values of C
C

, and CL1 are for reference only.

L0

, Cb, Cc, Cd, Ce, Cl, C12, CG,

a

C

V

DD

G

5 to 25 pF

5.0 V

C

v

C

l

C

e

C

d

C

c

C

b

C

a

Buzzer

Crystal

32.768 kHz

Open

0.1 mF

0.1 mF

0.1 mF

0.1 mF

0.1 mF

0.1 mF

0.1 mF

C

12

0.1 mF

Push SW

Open

XT0

XT1
V

DDH

V

DD

CB1
CB2
V

DDL

V

DD5

V

DD4

V

DD3

V

DD2

V

DD1

C1

C2

RESET
TST1
TST2
BD

COM1-16

SEG0-39

MSM63184B

OSC0

OSC1

P5.3
P5.2
P5.1
P5.0
P4.3
P4.2
P4.1
P4.0

P1.3
P1.2
P1.1
P1.0
P0.3
P0.2
P0.1
P0.0

V

DDI

CL0 30 pF

C

L1

30 pF

Ceramic
Resonator
(Example: 1 MHz)

SW Matrix
(8 ¥ 8)

V

DD

Note: V

Be sure to connect the V
device or to the positive power supply pin of the external memory.

V

DD

BDB

P4-7

A15-0

External

V

SS

P9, PA

P8.0
P8.1

is the power supply pin for the input, output, and input-output ports.

DDI

pin either to the positive power supply pin (VDD) of this

DDI

D7-0

Memory

(64K ¥ 8 bits)

RD
WR

V

SS

Application Circuit Example with No Power Supply Backup

28/29

¡ Semiconductor MSM63184B

PACKAGE DIMENSIONS

(Unit : mm)

QFP128-P-1420-0.50-K

Mirror finish

Package material
Lead frame material
Pin treatment
Solder plate thickness
Package weight (g)

Epoxy resin
42 alloy
Solder plating
5 mm or more

1.19 TYP.

Notes for Mounting the Surface Mount Type Package

The SOP, QFP, TSOP, SOJ, QFJ (PLCC), SHP and BGA are surface mount type packages, which
are very susceptible to heat in reflow mounting and humidity absorbed in storage.
Therefore, before you perform reflow mounting, contact Oki’s responsible sales person for the
product name, package name, pin number, package code and desired mounting conditions
(reflow method, temperature and times).

29/29