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Cascadable Silicon Bipolar
MMIC␣ Amplifier
Technical Data
MSA-1120
Features
• High Dynamic Range
Cascadable 50␣ Ω or 75␣ Ω
Gain Block
• 3␣ dB Bandwidth:
50␣ MHz to 1.6␣ GHz
• 17.5 dBm Typical P
0.5␣ GHz
1␣ dB
at
disk package for good thermal
characteristics. This MMIC is
designed for high dynamic range
in either 50 or 75␣ Ω systems by
combining low noise figure with
high IP3. Typical applications
include narrow and broadband
linear amplifiers in industrial and
military systems.
• 12 dB Typical 50␣ Ω Gain at
0.5␣ GHz
• 3.5␣ dB Typical Noise Figure
at 0.5␣ GHz
• Hermetic Metal/Beryllia
Microstrip Package
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metallization to achieve excellent
performance, uniformity and
Description
The MSA-1120 is a high performance silicon bipolar Monolithic
Microwave Integrated Circuit
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
(MMIC) housed in a hermetic BeO
Typical Biasing Configuration
R
bias
200 mil BeO Package
MAX
V
> 8 V
CC
RFC (Optional)
C
block
IN OUT
4
3
MSA
1
2
V
= 5.5 V
d
C
block
5965-9559E
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MSA-1120 Absolute Maximum Ratings
Parameter Absolute Maximum
Device Current 100 mA
Power Dissipation
RF Input Power +13 dBm
Junction Temperature 200°C
Storage Temperature –65 to 200° C
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
3. Derate at 16.7 mW/° C for T
4. The small spot size of this technique results in a higher, though more
= 25°C.
CASE
accurate determination of θ
MENTS section “Thermal Resistance” for more information.
[2,3]
650 mW
> 161°C.
C
than do alternate methods. See MEASURE-
jc
[1]
Thermal Resistance
θjc = 60°C/W
[2,4]
:
[2]
[1]
, T
A
= 25° C
= 50 Ω Units Min. Typ. Max.
O
GHz 1.6
Electrical Specifications
Symbol Parameters and Test Conditions: Id = 60 mA, Z
G
∆G
f
P
3 dB
Power Gain (|S21|2) f = 0.1 GHz dB 11.5 12.5 13.5
Gain Flatness f = 0.1 to 1.0 GHz dB ±0.7 ± 1.0
P
3 dB Bandwidth
Input VSWR f = 0.1 to 1.5 GHz 1.7:1
VSWR
Output VSWR f = 0.1 to 1.5 GHz 1.9:1
NF 50 Ω Noise Figure f = 0.5 GHz dB 3.5 4.5
P
IP
t
V
1 dB
3
D
d
Output Power at 1 dB Gain Compression f = 0.5 GHz dBm 16.0 17.5
Third Order Intercept Point f = 0.5 GHz dBm 30.0
Group Delay f = 0.5 GHz psec 200
Device Voltage V 4.5 5.5 6.5
dV/dT Device Voltage Temperature Coefficient mV/°C –8.0
Notes:
1. The recommended operating current range for this device is 40 to 75 mA. Typical performance as a function of current
is on the following page.
Referenced from 50 MHz gain (GP).
2.
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MSA-1120 Typical Scattering Parameters (Z
G
p
(dB)
0.1.02 .05 0.5 1.0 2.0 3.0
FREQUENCY (GHz)
Figure 1. Typical Power Gain vs.
Frequency, Id = 60 mA.
4020 60 80
Id (mA)
Figure 3. Power Gain vs. Current.
0
2
4
6
8
10
14
12
16
4
6
8
12
10
14
G
p
(dB)
Figure 4. Output Power at 1 dB Gain
Compression, Noise Figure and Power
Gain vs. Case Temperature,
f = 0.5 GHz, Id = 60 mA.
3
4
5
11
13
12
16
17
18
–55 +25 +125
P
1 dB
(dBm)NF (dB)
Gp (dB)
TEMPERATURE (°C)
G
P
1.0 GHz,
P
1 dB
NF
20 468
V
d
(V)
Figure 2. Device Current vs. Voltage.
0
20
40
60
100
80
I
d
(mA)
TC = +125°C
TC = +25°C
TC = –55°C
FREQUENCY (GHz)
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
FREQUENCY (GHz)
Figure 6. Noise Figure vs. Frequency.
3.5
3.0
4.0
4.5
5.0
NF (dB)
0.1 0.2 0.3 0.5 2.01.0 0.1 0.2 0.3 0.5 2.01.0
12
14
16
18
22
20
P
1 dB
(dBm)
Id = 75 mA
Id= 75 mA
Id= 60 mA
Id= 40 mA
Id = 60 mA
Id = 40 mA
ZO = 50 Ω
Z
O
= 75 Ω
2.0 GHz
0.1 GHz
0.5 GHz
1.0 GHz
Freq.
S
11
S
21
= 50 Ω, TA = 25° C, I
O
S
12
S
= 60 mA)
d
22
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang k
.0005 .78 –21 19.6 9.53 168 –25.1 .057 50 .79 –21 0.51
.005 .19 –72 13.8 4.91 165 –16.8 .144 11 .19 –72 0.98
.025 .05 –56 12.9 4.44 174 –16.5 .149 3 .06 –75 1.08
.050 .04 –52 12.5 4.23 174 –16.1 .156 2 .04 –79 1.08
.100 .04 –56 12.5 4.22 172 –16.2 .155 1 .04 –78 1.09
.200 .05 –72 12.4 4.19 165 –16.1 .157 1 .06 –91 1.08
.300 .07 –84 12.4 4.15 158 –16.0 .159 2 .09 –101 1.07
.400 .09 –96 12.3 4.10 151 –15.9 .161 2 .11 –109 1.06
.500 .10 –105 12.1 4.04 144 –15.8 .163 3 .13 –117 1.05
.600 .12 –113 12.0 3.98 137 –15.6 .166 3 .16 –124 1.04
.700 .14 –120 11.8 3.89 131 –15.4 .169 2 .18 –130 1.03
.800 .15 –127 11.6 3.80 124 –15.2 .173 2 .20 –136 1.01
.900 .17 –134 11.4 3.71 118 –15.0 .178 1 .22 –142 1.00
1.000 .19 –140 11.1 3.60 112 –14.8 .181 2 .24 –148 0.99
1.500 .25 –167 9.8 3.10 83 –14.0 .200 –3 .31 –174 0.95
2.000 .31 171 8.4 2.64 58 –13.3 .216 –10 .35 163 0.95
2.500 .35 157 7.3 2.31 39 –12.8 .228 –16 .36 148 0.96
3.000 .40 140 6.1 2.02 19 –12.5 .236 –23 .36 134 0.99
A model for this device is available in the DEVICE MODELS section.
Typical Performance, T
(unless otherwise noted)
= 25° C, ZO = 50 Ω
A
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200 mil BeO Package Dimensions
4
GROUND
.300 ± .025
7.62 ± .64
45°
1
3
.030
.76
RF INPUT
NO REFERENCE
GROUND
.048 ± .010
1.21 ± .25
.060
1.52
.128
3.25
.205
5.21
Notes:
(unless otherwise specified)
1. Dimensions are
2
2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13
3. Base of package is
electrically isolated.
Package marking code is “A11”
RF OUTPUT
AND BIAS
.004 ± .002
.10 ± .05
.023
.57
in
mm
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