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Cascadable Silicon Bipolar
MMIC␣ Amplifier
Technical Data
MSA-0685
Features
• Cascadable 50 Ω Gain Block
• Low Operating Voltage:
3.5 V Typical V
• 3 dB Bandwidth:
DC to 0.8 GHz
d
plastic package. This MMIC is
designed for use as a general
purpose 50 Ω gain block. Typical
applications include narrow and
broad band IF and RF amplifiers
in commercial and industrial
applications.
• High Gain:
18.5␣ dB Typical at 0.5 GHz
• Low Noise Figure:
3.0 dB Typical at 0.5 GHz
• Low Cost Plastic Package
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metallization to achieve excellent
Description
The MSA-0685 is a high performance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a low cost
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
Typical Biasing Configuration
R
bias
85 Plastic Package
,
MAX
V
> 5 V
CC
RFC (Optional)
C
block
IN OUT
4
3
MSA
1
2
V
= 3.5 V
d
C
block
5965-9587E
6-378
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MSA-0685 Absolute Maximum Ratings
Parameter Absolute Maximum
Device Current 50 mA
Power Dissipation
[2,3]
200 mW
RF Input Power +13 dBm
Junction Temperature 150°C
Storage Temperature –65 to 150° C
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
CASE
= 25°C.
> 128° C.
C
2. T
3. Derate at 9.1 mW/° C for T
4. See MEASUREMENTS section “Thermal Resistance” for more information.
[1]
Thermal Resistance
θjc = 110°C/W
[2,4]
:
Electrical Specifications
Symbol Parameters and Test Conditions: Id = 16 mA, Z
G
P
Power Gain (|S21|2) f = 0.1 GHz dB 20.0
[1]
, T
A
= 25° C
= 50 Ω Units Min. Typ. Max.
O
f = 0.5 GHz 17.0 18.5
∆G
f
3 dB
VSWR
Gain Flatness f = 0.1 to 0.5 GHz dB ±0.7
P
3 dB Bandwidth GHz 0.8
Input VSWR f = 0.1 to 1.5 GHz 1.5:1
Output VSWR f = 0.1 to 1.5 GHz 1.4:1
NF 50 Ω Noise Figure f = 0.5 GHz dB 3.0
P
IP
t
V
1 dB
3
D
d
Output Power at 1 dB Gain Compression f = 0.5 GHz dBm 2.0
Third Order Intercept Point f = 0.5 GHz dBm 14.5
Group Delay f = 0.5 GHz psec 200
Device Voltage V 2.8 3.5 4.2
dV/dT Device Voltage Temperature Coefficient mV/°C –8.0
Note:
1. The recommended operating current range for this device is 12 to 25 mA. Typical performance as a function of current
is on the following page.
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MSA-0685 Typical Scattering Parameters (Z
Freq.
S
11
S
21
= 50 Ω, TA = 25° C, I
S
12
S
= 16 mA)
d
22
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang k
0.1 .04 171 20.1 10.09 171 –22.5 .075 5 .04 –30 1.04
0.2 .02 –180 29.8 9.75 161 –22.4 .076 10 .05 –56 1.04
0.3 .02 –143 19.4 9.38 153 –22.2 .077 15 .07 –76 1.05
0.4 .03 –113 19.1 8.99 145 –21.8 .081 17 .08 –91 1.04
0.5 .05 –105 18.7 8.57 138 –21.3 .086 21 .10 –104 1.04
0.6 .07 –101 18.2 8.14 131 –20.7 .092 25 .11 –116 1.03
0.8 .10 –111 17.3 7.32 119 –19.7 .103 28 .13 –134 1.01
1.0 .13 –118 16.4 6.57 107 –18.8 .115 28 .14 –150 0.99
1.5 .21 –140 14.1 5.06 84 –17.1 .140 28 .15 180 1.00
2.0 .29 –163 12.0 3.98 65 –15.8 .163 26 .16 157 1.02
2.5 .34 –176 10.3 3.26 55 –15.2 .174 28 .16 150 1.06
3.0 .41 169 8.7 2.71 42 –14.8 .181 25 .15 143 1.10
3.5 .46 157 7.2 2.31 30 –14.2 .194 22 .13 144 1.11
4.0 .49 146 6.1 2.01 18 –13.8 .203 20 .10 156 1.13
4.5 .52 135 5.0 1.77 7 –13.4 .215 17 .09 173 1.14
5.0 .54 123 4.1 1.60 –3 –12.9 .226 15 .09 –178 1.14
Note:
1. A model for this device is available in the DEVICE MODELS section.
Typical Performance, T
(unless otherwise noted)
21
Gain Flat to DC
18
15
12
(dB)
p
G
9
6
3
0
0.1 0.3 0.5 1.0 3.0 6.0
FREQUENCY (GHz)
Figure 1. Typical Power Gain vs.
Frequency, TA = 25°C, Id = 16 mA.
20
19
18
Gp (dB)
17
5
4
3
(dBm)
2
1 dB
P
1
0
–25 +250 +55 +85
TEMPERATURE (°C)
Figure 4. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Case Temperature, f = 0.5 GHz,
Id=16mA.
G
P
NF
P
1 dB
= 25° C
A
5
4
3
2
NF (dB)
1
0
25
20
15
(mA)
d
I
10
TC = +85°C
TC = +25°C
TC = –25°C
5
0
102345
V
(V)
d
(dB)
p
G
25
20
15
10
5
0
10 20 25 3015
Id (mA)
Figure 2. Device Current vs. Voltage. Figure 3. Power Gain vs. Current.
12
Id = 30 mA
8
Id = 20 mA
(dBm)
4
1 dB
P
Id = 16 mA
0
Id = 12 mA
-4
0.1 0.2 0.3 0.5 2.01.0 4.0
FREQUENCY (GHz)
Figure 5. Output Power at 1 dB Gain
4.0
3.5
3.0
NF (dB)
2.5
2.0
0.1 0.2 0.3 0.5 2.01.0 4.0
FREQUENCY (GHz)
Id= 12 mA
Id= 16 mA, 30 mA
Id= 20 mA
Figure 6. Noise Figure vs. Frequency.
Compression vs. Frequency.
6-380
0.1 GHz
0.5 GHz
1.0 GHz
2.0 GHz
Page 4
85 Plastic Package Dimensions
.020
.51
A06
.085
2.15
5° TYP.
.286 ± .030
7.36 ± .76
4
0.143 ± 0.015
3.63 ± 0.38
3
RF OUTPUT
AND BIAS
Notes:
(unless otherwise specified)
1. Dimensions are
2
2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13
.006 ± .002
.15 ± .05
45°
1
.060 ± .010
1.52 ± .25
.07
0.43
GROUND
RF INPUT
GROUND
in
mm
6-381
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