Datasheet MSA-0520 Datasheet (HP)

Cascadable Silicon Bipolar
MMIC␣ Amplifier

Technical Data

MSA-0520

Features

• Cascadable 50 Ω Gain Block

• High Output Power:

+23 dBm Typical P

1.0␣ GHz

• Low Distortion:

33 dBm Typical IP3 at 1.0␣ GHz

1 dB

at

BeO disk package for good
thermal characteristics. This
MMIC is designed for use as a

general purpose 50 Ω gain block.

Typical applications include
narrow and broad band IF and RF
amplifiers in industrial and
military applications.

• 8.5 dB Typical Gain at

1.0␣ GHz

• Hermetic Metal/Beryllia
Microstrip Package

The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli­zation to achieve excellent

Description

The MSA-0520 is a high perfor­mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a hermetic,

performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.

Typical Biasing Configuration

R

bias

200 mil BeO Package

,

MAX

V

> 15 V

CC

RFC (Optional)

C

block

IN OUT

4

3

MSA

1

2

V

= 12 V

d

C

block

5965-9582E

6-358

MSA-0520 Absolute Maximum Ratings

Parameter Absolute Maximum

Device Current 225 mA
Power Dissipation
RF Input Power +25 dBm

Junction Temperature 200°C
Storage Temperature –65 to 200° C

Notes:

1. Permanent damage may occur if any of these limits are exceeded.

2. T

3. Derate at 40 mW/° C for T

4. The small spot size of this technique results in a higher, though more

= 25°C.

CASE

accurate determination of θ

MENTS section “Thermal Resistance” for more information.

[2,3]

3.0 W

> 125°C.

C

than do alternate methods. See MEASURE-

jc

[1]

Thermal Resistance

θjc = 25°C/W

[2,4]

:

[2]

[1]

, T

A

= 25° C

= 50 Ω Units Min. Typ. Max.

O

GHz 2.8

Electrical Specifications

Symbol Parameters and Test Conditions: Id = 165 mA, Z

P

1 dB

G

P

∆G

f

3 dB

VSWR

IP

3

NF

50 Ω

t

D

V

d

Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 21.0 23.0

Power Gain (|S21|2) f = 0.1 GHz dB 7.5 8.5 9.5

Gain Flatness f = 0.1 to 2.0 GHz dB ±0.75

P

3 dB Bandwidth

Input VSWR f = 0.1 to 2.0 GHz 2.0:1

Output VSWR f = 0.1 to 2.0 GHz 2.5:1

Third Order Intercept Point f = 1.0 GHz dBm 33.0

50 Ω Noise Figure f = 1.0 GHz dB 6.5

Group Delay f = 1.0 GHz psec 170

Device Voltage V 10.5 12.0 13.5

dV/dT Device Voltage Temperature Coefficient mV/°C –16.0

Notes:

1. The recommended operating current range for this device is 80 to 200 mA. Typical performance as a function of current
is on the following page.

2. Referenced from 0.1 GHz Gain (G

).

P

6-359

MSA-0520 Typical Scattering Parameters (T

Freq.

S

11

S

21

= 25° C, I

A

S

= 165 mA)

d

12

S

22

MHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang k

5 .57 –38 14.4 5.25 165 –19.4 .107 38 .67 –35 0.57
25 .25 –90 10.7 3.42 160 –14.9 .180 17 .29 –81 0.93
50 .15 –111 9.5 2.97 163 –14.4 .190 9 .18 –97 1.10

100 .11 –138 8.9 2.80 166 –14.2 .195 3 .11 –113 1.16
200 .10 –152 8.8 2.75 163 –14.1 .197 1 .10 –125 1.17
400 .10 –152 8.7 2.72 152 –14.1 .198 –2 .14 –123 1.16
600 .11 –147 8.6 2.70 140 –14.0 .199 –4 .18 –123 1.14

800 .13 –142 8.5 2.67 128 –14.1 .199 –6 .22 –127 1.12
1000 .15 –140 8.4 2.64 115 –14.1 .198 –8 .27 –131 1.09
1500 .22 –142 8.0 2.52 85 –13.7 .206 –12 .34 –143 0.98
2000 .30 –156 7.4 2.36 55 –13.3 .216 –16 .43 –158 0.85
2500 .37 –170 6.7 2.16 33 –12.9 .227 –18 .48 –166 0.75
3000 .41 170 5.6 1.91 8 –12.7 .232 –23 .51 –177 0.70
3500 .45 149 4.5 1.68 –16 –12.1 .249 –31 .55 173 0.63
4000 .46 124 3.3 1.45 –40 –11.7 .259 –39 .56 162 0.66

A model for this device is available in the DEVICE MODELS section.

Typical Performance, T

(unless otherwise noted)

10

8

6

GAIN (dB)

4

2

0

14 16 18 20 22 24 26 28 30

1.5 GHz

2.0 GHz

POWER OUT (dBm)

Figure 1. Typical Gain vs. Power Out,
T

= 25°C, Id = 165 mA.

A

28

26

24

(dBm)

22

1 dB

P

20

18

16

Figure 4. Output Power @ 1 dB Gain
Compression vs. Temperature,

I

= 165 mA.

d

+25-50 +100

CASE TEMPERATURE (°C)

1.0 GHz

0.1 GHz

0.5 GHz

0.5 GHz

1.0 GHz

2.0 GHz

= 25° C

A

200

TC = +100°C
T

= +25°C

C

T

= –50°C

C

150

100

(mA)

d

I

50

0

0 3 6 9 12 15

V

(V)

d

Figure 2. Device Current vs. Voltage.

10

8

6

Gp (dB)

4

Id = 200 mA

2

Id = 165 mA
Id = 80 mA

0

0.1 0.2 0.3 0.5 2.01.0
FREQUENCY (GHz)

Figure 5. Gain vs. Frequency.

4.0

36

32

(dBm)

3

28

IP

24

(dBm)

20

1 dB

P

16

80 120 160 200

I

d

(mA)

IP

3

P

1 dB

Figure 3. Output Power at 1 dB Gain
Compression, Third Order Intercept
vs. Current, f = 1.0 GHz.

4

3

Output

2

VSWR

1

0.1 0.2 0.3 0.5 2.01.0
FREQUENCY, (GHz)

Input

4.0

Figure 6. VSWR vs. Frequency,
I

= 165 mA.

d

6-360

200 mil BeO Package Dimensions

4

GROUND

.300 ± .025

7.62 ± .64
45°

1

3

.030

.76

RF INPUT

NO REFERENCE

GROUND

.048 ± .010

1.21 ± .25

.060

1.52

.128

3.25

.205

5.21

RF OUTPUT

AND BIAS
Notes:
(unless otherwise specified)

1. Dimensions are

2

2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13

3. Base of package is
electrically isolated.

.004 ± .002

.10 ± .05

.023

.57

in

mm

6-361