Page 1
Cascadable Silicon Bipolar
MMIC␣ Amplifier
Technical Data
MSA-0505
Features
• Cascadable 50 Ω Gain Block
• High Output Power:
18.0 dBm Typical P
1.0␣ GHz
• Low Distortion:
29.0 dBm Typical IP3 at 1.0␣ GHz
• 7.0 dB Typical Gain at
1.0␣ GHz
• Surface Mount Plastic
Package
• Tape-and-Reel Packaging
Option Available
Note:
1. Refer to PACKAGING section
“Tape-and-Reel Packaging for
Semiconductor Devices.”
[1]
1 dB
at
The MSA-0505 is a high performance medium power silicon
bipolar Monolithic Microwave
Integrated Circuit (MMIC) housed
in a low cost, surface mount
package. This MMIC is designed
for use as a general purpose 50 Ω
gain block. Typical applications
include narrow and broad band IF
and RF amplifiers in commercial
systems.
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f
MAX
,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metallization to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
05 Plastic PackageDescription
Typical Biasing Configuration
R
bias
RFC (Optional)
C
block
IN OUT
4
3
MSA
1
2
V
= 8.4 V
d
C
block
5965-9581E
V
CC
> 12 V
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MSA-0505 Absolute Maximum Ratings
Parameter Absolute Maximum
Device Current 135 mA
Power Dissipation
[2,3]
1.5 W
RF Input Power +25 dBm
Junction Temperature 200°C
Storage Temperature –65 to 150° C
[1]
Thermal Resistance
θjc = 85°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
CASE
= 25°C.
2. T
3. Derate at 11.8 mW/° C for TC > 73°C.
4. See MEASUREMENTS section
“Thermal Resistance” for more
Electrical Specifications
[1]
, T
A
= 25° C
Symbol Parameters and Test Conditions: Id = 80 mA, Z
P
1 dB
Output Power at 1 dB Gain Compression f = 0.5 GHz dBm 19.0
= 50 Ω Units Min. Typ. Max.
O
information.
f = 1.0 GHz dBm 16.0 18.0
G
P
Power Gain (|S21|2) f = 0.5 GHz dB 7.5
f = 1.0 GHz 6.0 7.0
∆G
f
3 dB
VSWR
IP
3
Gain Flatness f = 0.1 to 1.5 GHz dB ±0.75
P
3 dB Bandwidth
[2]
GHz 2.3
Input VSWR f = 0.1 to 1.5 GHz 1.6:1
Output VSWR f = 0.1 to 1.5 GHz 2.0:1
Third Order Intercept Point f = 1.0 GHz dBm 29.0
NF 50 Ω Noise Figure f = 1.0 GHz dB 6.5
t
D
V
d
Group Delay f = 1.0 GHz psec 190
Device Voltage V 6.7 8.4 10.1
dV/dT Device Voltage Temperature Coefficient mV/°C –16.0
Notes:
1. The recommended operating current range for this device is 60 to 100 mA. Typical performance as a function of current
is on the following page.
2. Referenced from 0.1 GHz Gain (G
).
P
[2,4]
:
Part Number Ordering Information
Part Number No. of Devices Container
MSA-0505-TR1 500 7" Reel
MSA-0505-STR 10 Strip
For more information, see “Tape and Reel Packaging for Semiconductor Devices”.
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MSA-0505 Typical Scattering Parameters (T
Freq.
S
11
S
21
= 25° C, I
A
S
= 80 mA)
d
12
S
22
MHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang k
5 .56 –39 14.9 5.56 161 –18.5 .120 39 .65 –36 0.60
25 .24 –103 9.7 3.05 156 –13.9 .202 12 .25 –90 0.97
50 .15 –130 8.2 2.57 163 –13.7 .207 7 .15 –116 1.15
100 .13 –155 7.8 2.45 165 –13.7 .207 3 .11 –132 1.21
200 .12 –170 7.7 3.43 161 –13.5 .211 1 .11 –145 1.21
400 .12 178 7.5 2.37 148 –13.6 .209 –1 .14 –146 1.23
600 .13 172 7.4 2.34 134 –13.6 .209 –2 .17 –151 1.23
800 .13 168 7.2 2.29 119 –13.6 .209 –3 .21 –157 1.23
1000 .14 166 7.0 2.24 105 –13.4 .213 –4 .25 –164 1.21
1500 .21 159 6.4 2.09 72 –13.3 .217 –6 .34 176 1.16
2000 .30 148 5.2 1.82 42 –13.1 .222 –9 .42 159 1.12
2500 .40 136 4.1 1.60 17 –12.9 .227 –11 .48 146 1.05
3000 .52 121 2.7 1.36 –7 –12.6 .234 –16 .55 133 0.92
A model for this device is available in the DEVICE MODELS section.
Typical Performance, T
(unless otherwise noted)
10
8
1.5 GHz
0.1 GHz
0.5 GHz
1.0 GHz
6
GAIN (dB)
4
2
0
81012141618202224
2.0 GHz
POWER OUT (dBm)
Figure 1. Typical Gain vs. Power Out,
TA = 25°C, Id = 80 mA.
14
12
10
8
Gp (dB)
6
= 25° C
A
120
T
= +85°C
C
TC = +25°C
TC = –25°C
90
60
(mA)
d
I
30
0
036912
Vd (V)
Figure 2. Device Current vs. Voltage.
34
30
(dBm)
3
26
IP
22
IP
3
22
20
18
(dBm)
16
1 dB
P
14
12
–25 0 +25 +85
TEMPERATURE (°C)
0.5 GHz
1.0 GHz
2.0 GHz
Figure 3. Output Power at 1 dB Gain
Compression, vs. Case Temperature,
Id = 80 mA.
4
2
0
.01 .05 0.1 0.5 1.0 5.0
FREQUENCY (GHz)
Figure 4. Gain vs. Frequency,
Id = 80 to 100 mA.
(dBm)
18
1 dB
P
14
60 70 80 90 100
I
(mA)
d
P
1 dB
Figure 5. Output Power at 1 dB Gain
Compression, Third Order Intercept
vs. Case Temperature, f = 1.0 GHz.
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Page 4
05 Plastic Package Dimensions
GROUND
0.030
0.89
RF INPUT
1
0.030 ± 0.010
0.76 ± 0.25
(4 PLCS)
0.008 ± 0.002
0.20 ± 0.05
GROUND
0.135 ± 0.015
3.42 ± 0.25
(4 PLCS)
0.020
0.51
Notes:
(unless otherwise specified)
1. Dimensions are
2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13
in
mm
5
0.145
3.68
4
2
0.030
DIA
0.76
RF OUTPUT
AND DC BIAS
3
0.030
0.76
0.050
1.27
0.0005 ± 0.010
(0.013 ± 0.25)
0.100 ± 0.010
2.54 ± 0.25
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