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Cascadable Silicon Bipolar
MMIC␣ Amplifiers
Technical Data
MSA-0370
Features
• Cascadable 50 Ω Gain Block
• 3 dB Bandwidth:
DC to 2.8 GHz
• 12.0 dB Typical Gain at
1.0␣ GHz
• 10.0 dBm Typical P
1.0␣ GHz
• Unconditionally Stable
(k>1)
• Hermetic Gold-ceramic
Microstrip Package
1dB
at
Description
The MSA-0370 is a high performance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a hermetic, high
reliability package. This MMIC is
designed for use as a general
purpose 50 Ω gain block. Typical
applications include narrow and
broad band IF and RF amplifiers in
industrial and military applications.
The MSA-series is fabricated using
HP’s 10 GHz f
bipolar MMIC process which uses
nitride self-alignment, ion implantation, and gold metallization to
Typical Biasing Configuration
R
bias
RFC (Optional)
C
block
IN OUT
4
3
MSA
1
2
C
block
= 5 V
V
d
V
CC
> 7 V
, 25␣ GHz f
T
MAX
, silicon
70 mil Package
achieve excellent performance,
uniformity and reliability. The use
of an external bias resistor for
temperature and current stability
also allows bias flexibility.
5965-9569E
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MSA-0370 Absolute Maximum Ratings
Parameter Absolute Maximum
Device Current 80 mA
Power Dissipation
RF Input Power +13 dBm
Junction Temperature 200°C
Storage Temperature –65 to 200° C
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
3. Derate at 8 mW/° C for T
4. The small spot size of this technique results in a higher, though more
= 25°C.
CASE
accurate determination of θ
MENTS section “Thermal Resistance” for more information.
[2,3]
425 mW
> 147° C.
C
than do alternate methods. See MEASURE-
jc
[1]
Thermal Resistance
θjc = 125°C/W
[2,4]
:
Electrical Specifications
Symbol Parameters and Test Conditions: Id = 35 mA, Z
G
P
∆G
f
3 dB
VSWR
Power Gain (|S21|2) f = 0.1 GHz dB 11.5 12.5 13.5
Gain Flatness f = 0.1 to 1.8 GHz dB ±0.6 ± 1.0
P
3 dB Bandwidth GHz 2.8
Input VSWR f = 0.1 to 3.0 GHz 1.8:1
[1]
, T
A
= 25° C
= 50 Ω Units Min. Typ. Max.
O
Output VSWR f = 0.1 to 3.0 GHz 1.8:1
NF 50 Ω Noise Figure f = 1.0 GHz dB 6.0
P
IP
t
V
1 dB
3
D
d
Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 10.0
Third Order Intercept Point f = 1.0 GHz dBm 23.0
Group Delay f = 1.0 GHz psec 125
Device Voltage V 4.5 5.0 5.5
dV/dT Device Voltage Temperature Coefficient mV/°C –8.0
Notes:
1. The recommended operating current range for this device is 20 to 50 mA. Typical performance as a function of current
is on the following page.
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MSA-0370 Typical Scattering Parameters (Z
Freq.
S
11
S
21
= 50 Ω, TA = 25° C, I
O
S
12
= 35 mA)
d
S
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.1 .13 –179 12.6 4.27 176 –18.6 .118 2 .09 –14
0.2 .13 –180 12.6 4.25 171 –18.3 .121 2 .10 –29
0.4 .12 –180 12.5 4.21 162 –18.4 .121 4 .12 –52
0.6 .11 –178 12.4 4.17 154 –18.2 .123 6 .14 –70
0.8 .11 –174 12.3 4.11 146 –17.8 .129 8 .17 –82
1.0 .10 –168 12.2 4.06 137 –17.7 .130 8 .20 –92
1.5 .11 –149 11.7 3.85 116 –17.1 .140 11 .24 –114
2.0 .16 –147 11.1 3.57 96 –16.2 .155 11 .27 –134
2.5 .22 –151 10.3 3.27 82 –15.6 .167 14 .27 –146
3.0 .28 –160 9.3 2.91 65 –15.2 .174 11 .27 –159
3.5 .33 –169 8.2 2.58 48 –14.5 .188 7 .26 –163
4.0 .36 –177 7.1 2.27 34 –14.3 .192 3 .25 –162
5.0 .38 163 5.1 1.81 9 –13.8 .203 –5 .23 –153
6.0 .39 132 3.4 1.48 –14 –13.5 .213 –13 .24 –160
A model for this device is available in the DEVICE MODELS section.
22
Typical Performance, T
A
(unless otherwise noted)
14
12
Gain Flat to DC
10
8
(dB)
p
G
6
4
2
0
0.1 0.3 0.5 1.0 3.0 6.0
FREQUENCY (GHz)
Figure 1. Typical Power Gain vs.
Frequency, TA = 25°C, Id = 35 mA.
13
12
(dB)
p
G
11
7
6
5
NF (dB)
4
–55 –25 +25 +85 +125
Figure 4. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Mounting Surface Temperature,
f = 1.0 GHz, Id = 35 mA.
G
P
P
1 dB
NF
TEMPERATURE (°C)
= 25° C
11
10
(dBm)
9
1 dB
P
8
60
TC = +125°C
50
TC = +25°C
TC = –55°C
40
30
(mA)
d
I
20
10
0
0 234561
Vd (V)
Figure 2. Device Current vs. Voltage.
18
15
Id = 50 mA
12
9
(dBm)
Id = 35 mA
1 dB
P
6
3
Id = 20 mA
0
0.1 0.2 0.3 0.5 2.01.0 4.0 0.1 0.2 0.3 0.5 2.01.0
FREQUENCY (GHz)
Figure 5. Output Power at 1 dB Gain
14
12
10
(dB)
p
G
8
6
4
15 25 30 40 503520
Figure 3. Power Gain vs. Current.
7.0
6.5
6.0
NF (dB)
5.5
5.0
FREQUENCY (GHz)
Figure 6. Noise Figure vs. Frequency.
Compression vs. Frequency.
Id (mA)
Id = 20 mA
Id = 35 mA
Id = 50 mA
0.1 GHz
0.5 GHz
1.0 GHz
2.0 GHz
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70 mil Package Dimensions
.040
1.02
42GROUND
RF OUTPUT
RF INPUT
AND BIAS
.020
.508
1
.004 ± .002
.10 ± .05
.070
1.70
.495 ± .030
12.57 ± .76
GROUND
3
Notes:
(unless otherwise specified)
1. Dimensions are
2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13
.035
.89
in
mm
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