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Cascadable Silicon Bipolar
MMIC␣ Amplifier
Technical Data
MSA-0304
Features
• Cascadable 50 Ω Gain Block
• 3 dB Bandwidth:
DC to 1.6 GHz
• 11.0 dB Typical Gain at
1.0␣ GHz
• 10.0 dBm Typical P
1.0␣ GHz
• Unconditionally Stable
(k>1)
• Low Cost Plastic Package
1 dB
at
plastic package. This MMIC is
designed for use as a general
purpose 50 Ω gain block. Typical
applications include narrow and
broad band IF and RF amplifiers
in industrial and military
applications.
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metallization to achieve excellent
Description
The MSA-0304 is a high performance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a low cost
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
Typical Biasing Configuration
R
bias
04A Plastic Package
,
MAX
V
> 7 V
CC
RFC (Optional)
C
block
IN OUT
4
3
MSA
1
2
C
block
= 5 V
V
d
5965-9566E
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MSA-0304 Absolute Maximum Ratings
Parameter Absolute Maximum
Device Current 70 mA
Power Dissipation
[2,3]
400 mW
RF Input Power +13 dBm
Junction Temperature 150°C
Storage Temperature –65 to 150° C
[1]
Thermal Resistance
θjc = 100°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. T
3. Derate at 10 mW/° C for T
CASE
= 25°C.
4. See MEASUREMENTS section
“Thermal Resistance” for more
Electrical Specifications
[1]
, T
A
= 25° C
Symbol Parameters and Test Conditions: Id = 35 mA, Z
G
P
Power Gain (|S21|2) f = 0.1 GHz dB 12.5
= 50 Ω Units Min. Typ. Max.
O
information.
f = 0.5 GHz 10.0 12.0
f = 1.0 GHz 11.0
∆G
f
3 dB
VSWR
Gain Flatness f = 0.1 to 1.3 GHz dB ±1.0
P
3 dB Bandwidth GHz 1.6
Input VSWR f = 0.1 to 3.0 GHz 1.3:1
Output VSWR f = 0.1 to 3.0 GHz 1.6:1
NF 50 Ω Noise Figure f = 1.0 GHz dB 6.0
P
IP
t
V
1 dB
3
D
d
Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 10.0
Third Order Intercept Point f = 1.0 GHz dBm 23.0
Group Delay f = 1.0 GHz psec 150
Device Voltage V 4.5 5.0 5.5
dV/dT Device Voltage Temperature Coefficient mV/°C –8.0
Note:
1. The recommended operating current range for this device is 20 to 50 mA. Typical performance as a function of current
is on the following page.
[2,4]
:
> 110°C.
C
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MSA-0304 Typical Scattering Parameters (Z
Freq.
S
11
S
21
= 50 Ω, TA = 25° C, I
O
S
12
= 35 mA)
d
S
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.1 .10 173 12.5 4.24 173 –18.5 .120 3 .12 –13
0.2 .10 162 12.5 4.21 167 –18.2 .123 4 .12 –24
0.4 .09 142 12.2 4.08 153 –18.0 .125 7 .13 –46
0.6 .08 127 11.9 3.93 141 –17.8 .128 10 .15 –64
0.8 .07 110 11.5 3.76 130 –17.3 .136 14 .16 –78
1.0 .06 92 11.1 3.58 118 –16.8 .144 16 .17 –91
1.5 .03 58 10.0 3.15 93 –15.5 .169 19 .19 –117
2.0 .03 175 8.8 2.76 71 –14.1 .197 18 .20 –139
2.5 .05 163 7.8 2.46 55 –13.2 .218 18 .21 –158
3.0 .12 148 6.8 2.20 38 –12.2 .246 15 .22 –174
3.5 .19 129 5.9 1.98 20 –11.2 .275 7 .24 171
4.0 .26 110 5.0 1.77 3 –10.6 .296 1 .26 158
5.0 .44 77 3.0 1.41 –28 –9.9 .319 –15 .29 128
6.0 .63 52 0.4 1.05 –56 –10.2 .310 –31 .37 94
A model for this device is available in the DEVICE MODELS section.
22
Typical Performance, T
A
(unless otherwise noted)
14
12
Gain Flat to DC
10
8
(dB)
p
G
6
4
2
0
0.1 0.3 0.5 1.0 3.0 6.0
FREQUENCY (GHz)
Figure 1. Typical Power Gain vs.
Frequency, TA = 25°C, Id = 35 mA.
12
11
(dB)
p
G
10
7
6
NF (dB)
5
–55 –25 0 +25 +55 +85 +125
Figure 4. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Case Temperature, f = 1.0 GHz,
Id=35mA.
G
P
P
1 dB
NF
TEMPERATURE (°C)
= 25° C
11
10
(dBm)
9
1 dB
P
8
60
TC = +85°C
50
TC = +25°C
TC = –25°C
40
30
(mA)
d
I
20
10
0
0 234 561
Vd (V)
Figure 2. Device Current vs. Voltage.
18
15
Id = 50 mA
12
9
(dBm)
Id = 35 mA
1 dB
P
6
3
Id = 20 mA
0
0.1 0.2 0.3 0.5 2.01.0 4.0
FREQUENCY (GHz)
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
14
12
10
(dB)
p
G
8
0.1 GHz
6
4
15 25 30 40 503520
0.5 GHz
1.0 GHz
2.0 GHz
Id (mA)
Figure 3. Power Gain vs. Current.
7.0
6.5
6.0
NF (dB)
5.5
5.0
0.1 0.2 0.3 0.5 2.01.0
Id = 20 mA
Id = 35 mA
Id = 50 mA
FREQUENCY (GHz)
Figure 6. Noise Figure vs. Frequency.
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04A Plastic Package Dimensions
)
12.39 ± 0.76
(0.488 ± 0.030)
4
GROUND
RF INPUT
0.76 (0.030)
2.54 ± 0.25
(0.100 ± 0.010)
1
4.29
(0.169)
0.51
(0.020)
DIMENSIONS ARE IN MILLIMETERS (INCHES).
1
3
2
3.68
(0.145)
GROUND
0.76 (0.030)
DIA.
0.96 (0.038)
RF OUTPUT
& BIAS
3
NOTES:
(UNLESS OTHERWISE SPECIFIED)
1. DIMENSIONS ARE IN
MILLIMETERS (INCHES)
2. TOLERANCES
mm .XX = ± 0.13
in .XXX = ± 0.005
0.20 ± 0.050
(0.008 ± 0.002
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