Datasheet MSA-0270 Datasheet (HP)

Cascadable Silicon Bipolar
MMIC␣ Amplifier

Technical Data

MSA-0270

Features

• Cascadable 50 Ω Gain Block

• 3 dB Bandwidth:

DC to 2.8 GHz

• 12.0 dB Typical Gain at

MMIC is designed for use as a

general purpose 50 Ω gain block.

Typical applications include
narrow and broad band IF and RF
amplifiers in industrial and
military applications.

1.0␣ GHz

• Unconditionally Stable
(k>1)

• Hermetic Gold-ceramic
Microstrip Package

The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli­zation to achieve excellent

Description

The MSA-0270 is a high perfor­mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a hermetic,

performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.

high reliability package. This

Typical Biasing Configuration

R

bias

70 mil Package

,

MAX

V

> 7 V

CC

RFC (Optional)

C

block

IN OUT

4

3

MSA

1

2

C

block

= 5 V

V

d

5965-9698E

6-278

MSA-0270 Absolute Maximum Ratings

Parameter Absolute Maximum

Device Current 60 mA
Power Dissipation
RF Input Power +13 dBm

Junction Temperature 200°C
Storage Temperature –65 to 200° C

Notes:

1. Permanent damage may occur if any of these limits are exceeded.

2. T

3. Derate at 8.3 mW/° C for T

4. The small spot size of this technique results in a higher, though more

= 25°C.

CASE

accurate determination of θ

MENTS section “Thermal Resistance” for more information.

[2,3]

325 mW

> 161° C.

C

than do alternate methods. See MEASURE-

jc

[1]

Thermal Resistance

θjc = 120°C/W

[2,4]

:

Electrical Specifications

Symbol Parameters and Test Conditions: Id = 25 mA, Z

G

P

∆G

f

3 dB

VSWR

Power Gain (|S21|2) f = 0.1 GHz dB 11.5 12.5 13.5

Gain Flatness f = 0.1 to 1.8 GHz dB ±0.6 ± 1.0

P

3 dB Bandwidth GHz 2.8

Input VSWR f = 0.1 to 3.0 GHz 1.4:1

[1]

, T

A

= 25° C

= 50 Ω Units Min. Typ. Max.

O

Output VSWR f = 0.1 to 3.0 GHz 1.4:1

NF 50 Ω Noise Figure f = 1.0 GHz dB 6.5

P

IP

t

V

1 dB

3

D

d

Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 4.5

Third Order Intercept Point f = 1.0 GHz dBm 17.0

Group Delay f = 1.0 GHz psec 125

Device Voltage V 4.5 5.0 5.5

dV/dT Device Voltage Temperature Coefficient mV/°C –8.0

Note:

1. The recommended operating current range for this device is 18 to 40 mA. Typical performance as a function of current
is on the following page.

6-279

MSA-0270 Typical Scattering Parameters (Z

Freq.

S

11

S

21

= 50 Ω, TA = 25° C, I

O

S

12

= 25 mA)

d

S

GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang

0.1 .11 179 12.6 4.26 176 –18.4 .120 1 .12 –8

0.2 .11 174 12.6 4.24 171 –18.6 .117 3 .12 –15

0.4 .10 169 12.5 4.21 162 –18.4 .120 4 .13 –30

0.6 .09 165 12.4 4.17 154 –18.2 .123 5 .14 –44

0.8 .08 161 12.3 4.11 146 –18.2 .123 7 .14 –55

1.0 .06 161 12.2 4.05 137 –18.0 .126 9 .15 –64

1.5 .02 –150 11.7 3.85 116 –17.2 .138 11 .16 –84

2.0 .06 –110 11.1 3.57 96 –16.3 .153 11 .16 –102

2.5 .11 –112 10.3 3.27 82 –15.7 .165 14 .14 –106

3.0 .17 –134 9.3 2.92 65 –15.2 .174 12 .13 –114

3.5 .22 –147 8.2 2.56 48 –14.7 .185 6 .15 –111

4.0 .26 156 7.0 2.23 33 –14.3 .192 3 .19 –107

5.0 .28 179 4.7 1.72 8 –14.0 .199 –6 .27 –107

6.0 .30 143 3.0 1.41 –13 –13.8 .204 –14 .29 –119

A model for this device is available in the DEVICE MODELS section.

22

Typical Performance, T

(unless otherwise noted)

14

12

Gain Flat to DC

10

8

(dB)

p

G

6

4

2

0

0.1 0.3 0.5 1.0 3.0 6.0
FREQUENCY (GHz)

Figure 1. Typical Power Gain vs.
Frequency, TA = 25°C, Id = 25 mA.

13
12

(dB)

p

G

11

8
7

6
5

4

(dBm)

1 dB

3

P

2

–55 –25 +25 +85 +125

TEMPERATURE (°C)

Figure 4. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Mounting Surface Temperature,
f = 1.0 GHz, Id = 25 mA.

G

P

NF

P

1 dB

= 25° C

A

8
7
6

5

NF (dB)

4
3

2

40

TC = +125°C
TC = +25°C

30

TC = –55°C

20

(mA)

d

I

10

0

0 234561

(V)

V

d

Figure 2. Device Current vs. Voltage.

12

Id = 40 mA

10

8

(dBm)

6

1 dB

P

4

Id = 25 mA

2

Id = 18 mA

0

0.1 0.2 0.3 0.5 2.01.0 4.0 0.1 0.2 0.3 0.5 2.01.0 4.0
FREQUENCY (GHz)

Figure 5. Output Power at 1 dB Gain

14

12

10

(dB)

p

G

8

Id (mA)

0.1 GHz

0.5 GHz

1.0 GHz

2.0 GHz

6

4

15 25 30 403520

Figure 3. Power Gain vs. Current.

7.5

7.0

6.5

NF (dB)

6.0

5.5

Id = 18 mA
Id = 25 mA
Id = 40 mA

FREQUENCY (GHz)

Figure 6. Noise Figure vs. Frequency.

Compression vs. Frequency.

6-280

70 mil Package Dimensions

.040

1.02
42GROUND

RF OUTPUT

RF INPUT

AND BIAS

.020
.508

1

.004 ± .002

.10 ± .05

.070

1.70

.495 ± .030

12.57 ± .76

GROUND

3

Notes:
(unless otherwise specified)

1. Dimensions are

2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13

.035

.89

in

mm

6-281