Datasheet MSA-0100-GP4 Datasheet (HP)

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Cascadable Silicon Bipolar MMIC␣ Amplifier

Technical Data

MSA-0100

Features

• Cascadable 50 Ω Gain Block

• 3 dB Bandwidth:

DC to 1.3 GHz

• High Gain:

18.5 dB Typical at 0.5 GHz

• Unconditionally Stable (k>1)

Description

The MSA-0100 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) chip. This MMIC is designed for use as a general

purpose 50 Ω gain block. Typical

The MSA-series is fabricated using HP’s 10 GHz f bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.

The recommended assembly procedure is gold-eutectic die

attach at 400° C and either wedge or

ball bonding using 0.7 mil gold wire.

“Chip Use”. applications include narrow and broad band IF and RF amplifiers in commercial, industrial and military applications.

Typical Biasing Configuration

bias

, 25␣ GHz f

[1]

See APPLICATIONS section,

> 7 V

MAX

, silicon

Chip Outline

Note:

1. This chip contains additional biasing options. The performance specified applies only to the bias option whose bond pads are indicated on the chip outline. Refer to the APPLICATIONS section “Silicon MMIC Chip Use” for additional information.

[1]

RFC (Optional)

block

IN OUT

MSA

block

= 5 V

5965-9689E

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MSA-0100 Absolute Maximum Ratings

Parameter Absolute Maximum

Device Current 40 mA

(TMS)

[2,3]

= 25°C.

200 mW

␣>␣191 °C.

than do alternate methods. See MEASURE-

Power Dissipation RF Input Power +20 dBm

Junction Temperature 200°C Storage Temperature –65 to 200° C

Notes:

1. Permanent damage may occur if any of these limits are exceeded.

2. T

Mounting Surface

3. Derate at 22.2 mW/° C for T

4. The small spot size of this technique results in a higher, though more

accurate determination of θ

MENTS section “Thermal Resistance” for more information.

[1]

Thermal Resistance

θjc = 45°C/W

[2,4]

Electrical Specifications

Symbol Parameters and Test Conditions

∆G

3 dB

VSWR

Power Gain (|S21|2) f = 0.1 GHz dB 19.0

Gain Flatness f = 0.1 to 0.7 GHz dB ±0.6

3 dB Bandwidth GHz 1.3

Input VSWR f = 0.1 to 3.0 GHz 1.3:1

Output VSWR f = 0.1 to 3.0 GHz 1.3:1

[1]

, T

= 25° C

[2]

: Id = 17 mA, Z

= 50 Ω Units Min. Typ. Max.

NF 50 Ω Noise Figure f = 0.5 GHz dB 5.5

1 dB

Output Power at 1 dB Gain Compression f = 0.5 GHz dBm 1.5

Third Order Intercept Point f = 0.5 GHz dBm 14.0

Group Delay f = 0.5 GHz psec 150

Device Voltage V 4.5 5.0 5.5

dV/dT Device Voltage Temperature Coefficient mV/°C –9.0

Notes:

1. The recommended operating current range for this device is 13 to 25 mA. Typical performance as a function of current is on the following page. RF performance of the chip is determined by packaging and testing 10 devices per wafer in a dual ground configuration.

Part Number Ordering Information

Part Number Devices Per Tray

MSA-0100-GP4 100

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MSA-0100 Typical Scattering Parameters

Freq.

[1]

= 50 Ω, TA = 25° C, I

= 17 mA)

GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang

0.1 .08 171 19.0 8.91 174 –22.7 .073 2 .10 –11

0.2 .07 161 18.9 8.82 169 –22.5 .075 6 .11 –24

0.3 .07 152 18.8 8.72 163 –22.3 .077 9 .10 –35

0.4 .06 143 18.6 8.56 156 –22.4 .076 12 .11 –44

0.5 .06 133 18.5 8.37 151 –22.1 .079 14 .11 –53

0.6 .05 115 18.2 8.15 146 –21.9 .080 19 .12 –60

0.8 .04 84 17.7 7.68 136 –21.3 .086 22 .12 –75

1.0 .04 3 17.1 7.17 126 –20.3 .096 26 .12 –88

1.5 .08 –39 15.5 5.95 106 –19.3 .109 32 .10 –107

2.0 .12 –76 13.7 4.86 90 –17.9 .127 32 .08 –128

2.5 .15 –102 12.2 4.09 82 –16.9 .142 36 .06 –130

3.0 .19 –122 10.8 3.47 71 –16.4 .151 36 .06 –125

3.5 .25 –137 9.4 2.96 60 –15.6 .165 34 .07 –107

4.0 .27 –147 8.2 2.56 51 –15.2 .173 32 .10 –86

4.5 .28 –157 7.0 2.24 42 –14.8 .182 29 .13 –80

5.0 .28 –171 6.0 2.00 35 –14.4 .190 28 .16 –77

Note:

1. S-parameters are de-embedded from 70 mil package measured data using the package model found in the DEVICE MODELS section.

MSA-0100 Typical Performance, T

(unless otherwise noted)

Gain Flat to DC

(dB)

0.1 0.3 0.5 1.0 3.0 6.0 FREQUENCY (GHz)

Figure 1. Typical Power Gain vs. Frequency, TA = 25°C, Id = 17 mA.

Id = 20 mA

Id = 17 mA

(dBm)

1 dB

Id = 13 mA

–2

(dB)

10 20 25 3015

Figure 2. Power Gain vs. Current.

7.0

6.5

6.0

NF (dB)

5.5

= 25° C

Id = 13 mA

= 17 mA

= 20 mA

Id (mA)

0.1 GHz

0.5 GHz

1.0 GHz

2.0 GHz

20 18

(dB)

(dBm)

1 dB

–2

–55 –25 +25 +85 +125

TEMPERATURE (°C)

1 dB

Figure 3. Output Power at 1 dB Gain Compression, NF and Power Gain vs. Mounting Surface Temperature, f = 0.5 GHz, I

= 17 mA.

NF (dB)

–4

0.1 0.2 0.3 0.5 2.01.0 4.0 0.1 0.2 0.3 0.5 2.01.0 FREQUENCY (GHz)

Figure 4. Output Power at 1 dB Gain Compression vs. Frequency.

5.0

FREQUENCY (GHz)

Figure 5. Noise Figure vs. Frequency.

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MSA-0100 Chip Dimensions

NOT APPLICABLE

INPUT

394 µm

15.5 mil

GROUND

394 µm

15.5 mil

Chip thickness is 114 µm/4.5 mil. Bond Pads are 41 µm/1.6 mil typical on each side. Note 1: Output contact is made by die attaching the backside of the die.

OPTIONAL OUTPUT

[1]

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