Datasheet MRF166W Datasheet (M A COM)

SEMICONDUCTOR TECHNICAL DATA

The RF MOSFET Line
Power Field Effect Transistor

N–Channel Enhancement–Mode MOSFET

Designed primarily for wideband large–signal output and driver stages to

30 – 500 MHz.

• Push–Pull Configuration Reduces Even Numbered Harmonics

• Guaranteed Performance at 500 MHz, 28 Vdc

Output Power = 40 Watts
Gain = 14 dB
Efficiency = 50%

• Typical Performance at 175 MHz, 28 Vdc
Output Power = 40 Watts
Gain = 17 dB
Efficiency = 60%

• Excellent Thermal Stability , Ideally Suited for Class A Operation

• Facilitates Manual Gain Control, ALC and Modulation Techniques

• 100% Tested for Load Mismatch at All Phase Angles with 30:1 VSWR

• Low C

— 4.0 pF @ VDS = 28 Volts

rss

Order this document

by MRF166W/D

MRF166W

40 W, 500 MHz

TMOS BROADBAND

RF POWER FET

MAXIMUM RATINGS

Drain–Gate Voltage V
Drain–Gate Voltage (RGS = 1.0 MΩ) V
Gate–Source Voltage V
Drain Current — Continuous I
Total Device Dissipation @ TC = 25°C

Derate above 25°C
Storage Temperature Range T
Operating Junction Temperature T

(TJ = 25°C unless otherwise noted)

Rating

THERMAL CHARACTERISTICS

Thermal Resistance — Junction to Case R

CASE 412–01, Style 1

1

3

5

4

Symbol Value Unit

DSS

DGR

GS

D

P

D

stg

J

θJC

–65 to +150 °C

FLANGE

2

65 Vdc
65 Vdc

± 20 Adc

8.0 ADC

175

1.0

200 °C

1.0 °C/W

Watts

°C/W

NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.

REV 3

1

ELECTRICAL CHARACTERISTICS (T

Characteristic Symbol Min Typ Max Unit

= 25°C unless otherwise noted)

C

OFF CHARACTERISTICS (1)

Drain–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 5.0 mA)

Zero Gate Voltage Drain Current

(VDS = 28 Vdc, VGS = 0 Vdc)

Gate–Source Leakage Current

(VGS = 20 Vdc, VDS = 0 Vdc)

ON CHARACTERISTICS (1)

Gate Threshold Voltage

(VDS= 10 Vdc, ID = 25 mA)

Forward Transconductance

(VDS= 10 Vdc, ID = 1.5 A)

DYNAMIC CHARACTERISTICS (1)

Input Capacitance

(VDS = 28 Vdc, VGS = 0 Vdc, f = 1.0 MHz)

Output Capacitance

(VDS = 28 Vdc, VGS = 0 Vdc, f = 1.0 MHz)

Reverse Transfer Capacitance

(VDS = 28 Vdc, VGS = 0 Vdc, f = 1.0 MHz)

FUNCTIONAL CHARACTERISTICS (2)

Common Source Power Gain

(VDD = 28 Vdc, P

Drain Efficiency

(VDD = 28 Vdc, P

Electrical Ruggedness

(VDD = 28 Vdc, P
Load VSWR = 30:1, All phase angles at frequency of test

Series Equivalent Input Impedance

(VDD = 28 Vdc, P

Series Equivalent Output Impedance

(VDD = 28 Vdc, P

(1) Each transistor chip measured separately.
(2) Both transistor chips operating in a push–pull amplifier.

= 40 W, f = 500 MHz, IDQ = 100 mA)

out

= 40 W, f = 500 MHz, IDQ = 100 mA)

out

= 40 W, f = 500 MHz, IDQ = 100 mA)

out

= 40 W, f = 500 MHz, IDQ = 100 mA)

out

= 40 W, f = 500 MHz, IDQ = 100 mA)

out

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

g

fs

C

iss

C

oss

C

rss

G

ps

η

Ψ

Z

in

Z

out

65 — —

Vdc

mA

— — 0.5

µA

— — 1.0

Vdc

1.5 3.0 4.5
mS

0.9 1.1 —

pF

— 28 —

pF

— 30 —

pF

— 4.0 —

dB

14 16 —

%

50 55 —

No Degradation in Output Power

Ohms

— 2.88 –j7.96 —

Ohms

— 6.12 –j9.43 —

REV 3

2

BIAS SUPPLY

R1

C11

R2

C12 C14

C13

+
–

VDD = 28 Vdc

RF INPUT

B1

C2

C1

C3

C9

C4

C3

R3

R4

L1

D.U.T.

L2

Inputs Line
70 mils x 2460 mils

C4

490 mils

C5

C6

C10

C5

680 mils

C7

C8

Output Lines
70 mils x 2380 mils

B2

RF OUTPUT

C6

C1, C2, C7, C8 220 pF, 100 mil Chip Capacitor, ATC
C3, C6 0 – 10 pF, Johanson
C4 27 pF, 100 mil Chip Capacitor, ATC
C5 22 pF, 100 mil Chip Capacitor, ATC
C9, C10, C1 1, C12 0.01 µF Blue Capacitor
C13 470 pF, 100 mil Chip Capacitor, ATC
C14 50 mF, 50 V Electrolytic Capacitor
L1, L2 8 Turns #20 A WG, 0.100 mils ID
B1, B2 6″ long, ID = 550 mils, 50 W Semi–Rigid Coax
R1 1.0 kW 1/2 Watt
R2 10 kW 1/2 Watt
R3, R4 45 W 1/2 Watt
Board Material – Teflon
Dielectric Thickness = 0.30″,



Fiberglass

εr = 2.55 Copper Clad, 2.0 oz. Copper

Figure 1. MRF166W 500 MHz T est Circuit Schematic

REV 3

3

60
55
50

45
40

35
30
25
20

, OUTPUT POWER (WATTS)

15

out

P

10

5
0

f = 500 MHz

VDD = 28 Vdc
IDQ = 100 mA

0 1 1.5 2 3

0.5 2.5
Pin, INPUT POWER (WA TTS)

24

f = 500 MHz

0 0.4 1.2 2

Pin, INPUT POWER (WA TTS)

, OUTPUT POWER (WATTS)

out

P

20

16

12

8

4

0

VDD = 13.5 Vdc
IDQ = 100 mA

2.4 2.80.8 1.6

Figure 2. Output Power versus Input Power, 28 Vdc

56
52

12

IDQ = 100 mA
f = 500 MHz

14

16 18 20 22 24 26 28

VDD, SUPPLY VOLTAGE (VOLTS)

Pin = 2 W

Pin = 1 W

Pin = 0.5 W

, OUTPUT POWER (WATTS)

out

P

48
44
40
36
32
28
24
20
16
12

8

Figure 4. Output Power versus Supply Voltage

Figure 3. Output Power versus Input Power, 13.5

Vdc

45
40

VDD = 28 Vdc
IDQ = 100 mA

35
30
25
20

TYPICAL DEVICE SHOWN

15

V

= 3.0 V

, OUTPUT POWER (WATTS)

out

P

10

GS(th)

5
0

–5 –4 –2 0

VDS, GATE–SOURCE VOLTAGE (VOLTS)

f = 500 MHz

1–3 –1

Figure 5. Output Power versus Gate Voltage

2

3

REV 3

4

100

90
80
70
60
50
40
30

C, CAPACITANCE (pF)

20
10

0

0 4 12 20

C

oss

C

iss

C

rss

VDS, DRAIN–SOURCE VOLTAGE (VOLTS)

Figure 6. Capacitance versus V oltage

VGS = 0 V
f = 1.0 MHz

24816

28

175

400

Z

in

ZOL*

500

f = 175 MHz

400

f = 500 MHz

Zo = 50 Ω

VDD = 28 Vdc, IDQ = 100 mA, P

f

MHz

175 3.7 – j 22.4 15.2 – j 16.6
400 3.6 – j 10.99 10.3 – j 7.99
500 2.88 – j 7.96 6.12 – j 9.43

Z

in

Ohms

out

= 40 W

ZOL*

Ohms

T able 1. Input and Output Impedances

Figure 7. Series Equivalent Input/Output Impedance

ZOL* = Conjugate of the optimum load impedance into which the device
output operates at a given output power, voltage and frequency.

NOTE: Input and output impedance values given are measured from gate to
gate and drain to drain respectively.

REV 3

5

MRF166W–500MHZ M J B

NOTES: 1) 3 X 5 inch Glass Teflon 32 Mil Board, Copper Both Sides

NOTES: 2) Small Holes are 40 Mils ID and Plated Through
NOTES: 3) Large Holes are 140 Mils ID and Plated Through

Figure 8. MRF166W Circuit Board Photomaster

(Scale 1:1)

REV 3

6

Figure 9. MRF166W T est Fixture

f

MHz

30
40
50
60
70
80

90
100
110
120
130
140
150
160
170
180
190
200
210
220
230
240
250
260
270
280
290
300
310
320
330
340
350
360
370
380
390
400
410
420
430
440

T able 1. Common Source S–Parameters (VDS = 24 V, ID = 230 mA)

S

11

|S11| φ |S21| φ |S12| φ |S22| φ

0.554

0.775

0.758

0.711

0.751

0.742

0.724

0.730

0.735

0.732

0.734

0.740

0.747

0.748

0.741

0.746

0.753

0.756

0.755

0.759

0.767

0.769

0.766

0.767

0.773

0.777

0.777

0.782

0.788

0.794

0.796

0.795

0.799

0.804

0.805

0.807

0.812

0.818

0.821

0.821

0.822

0.826

–85
–113
–124
–132
–139
–143
–146
–149
–151
–153
–155
–156
–157
–159
–160
–160
–161
–162
–162
–163
–163
–164
–164
–165
–165
–165
–166
–166
–166
–167
–167
–168
–168
–168
–168
–169
–169
–170
–170
–170
–171
–171

20.30

20.00

17.50

14.60

12.70

11.30

10.00

8.97

8.29

7.53

7.01

6.57

6.01

5.66

5.22

4.94

4.67

4.51

4.15

3.91

3.75

3.56

3.41

3.26

3.07

3.03

2.89

2.80

2.66

2.54

2.47

2.38

2.27

2.17

2.15

2.06

2.00

1.91

1.86

1.83

1.74

1.67

S

21

128
113
107
100
100

95
92
90
87
84
83
81
78
76
76
74
73
70
69
68
65
64
63
63
61
61
58
57
57
55
54
54
52
51
50
48
48
47
46
44
44
43

0.044

0.040

0.041

0.050

0.042

0.043

0.042

0.042

0.043

0.042

0.042

0.043

0.042

0.041

0.040

0.041

0.041

0.040

0.039

0.039

0.039

0.038

0.037

0.035

0.035

0.035

0.034

0.034

0.034

0.033

0.032

0.031

0.030

0.030

0.030

0.029

0.028

0.027

0.029

0.028

0.026

0.025

S

12

28
26
20
20
11

9
8
6
3
2
1

0
–2
–4
–4
–4
–6
–7
–8
–8

–10
–12
–12
–10
–10
–11
–13
–11
–12
–12
–13
–13
–11
–11
–11
–12
–12
–10
–11
–11

–9
–7

0.628

0.632

0.652

0.570

0.666

0.666

0.657

0.663

0.683

0.666

0.688

0.701

0.688

0.715

0.690

0.719

0.725

0.729

0.727

0.724

0.751

0.733

0.726

0.725

0.725

0.753

0.732

0.744

0.764

0.760

0.787

0.753

0.772

0.782

0.796

0.782

0.796

0.784

0.830

0.823

0.791

0.788

S

22

–121
–123
–135
–135
–145
–149
–151
–154
–156
–158
–159
–160
–162
–162
–161
–164
–165
–166
–165
–166
–169
–167
–167
–167
–167
–167
–169
–169
–169
–167
–169
–170
–168
–169
–169
–170
–170
–168
–170
–171
–170
–170

REV 3

7

f

f

f

MHz

MHz

450
460
470
480
490
500
600
700
800
900

1000

MHz

30
40
50
60
70
80

90
100
110
120
130
140
150
160
170
180
190
200
210
220
230
240
250
260
270
280
290
300

T able 1. Common Source S–Parameters (VDS = 24 V, ID = 230 mA) (continued)

S

22

–170
–174
–173
–172
–171
–172
–176
–177

178
179
174

0.830

0.831

0.832

0.835

0.835

0.823

0.874

0.910

0.932

0.966

0.975

S

12

–7

–10

–7
–3

1
3

–171

89
61
68
49

0.820

0.843

0.827

0.836

0.835

0.849

0.873

0.867

0.904

0.897

0.953

1.68

1.64

1.54

1.50

1.43

1.43

1.12

0.86

0.74

0.63

0.54

S

21

42
41
41
39
38
37
29
23
18
12

5

0.025

0.026

0.025

0.024

0.024

0.025

0.003

0.013

0.035

0.029

0.042

S

11

–171
–172
–172
–173
–173
–174
–176
–179

179
176
172

T able 2. Common Source S–Parameters (VDS = 28 V, ID = 250 mA)

S

11

|S11| φ |S21| φ |S12| φ |S22| φ

0.601

0.783

0.764

0.727

0.759

0.751

0.732

0.737

0.741

0.738

0.740

0.747

0.754

0.757

0.749

0.753

0.759

0.761

0.759

0.762

0.771

0.775

0.774

0.775

0.780

0.782

0.781

0.785

–86
–112
–122
–131
–138
–142
–146
–149
–150
–153
–154
–156
–157
–159
–159
–160
–161
–161
–162
–163
–164
–164
–165
–165
–165
–165
–166
–166

22.20

21.20

18.50

15.50

13.50

12.10

10.70

9.55

8.81

8.01

7.47

7.01

6.43

6.07

5.59

5.28

4.99

4.81

4.44

4.18

4.03

3.83

3.69

3.52

3.29

3.24

3.10

3.01

S

21

128
114
108
101
100

95
93
90
88
85
83
82
79
77
76
75
73
70
70
69
66
65
64
63
61
61
59
58

0.040

0.037

0.038

0.045

0.039

0.040

0.040

0.040

0.040

0.040

0.040

0.040

0.040

0.039

0.038

0.039

0.039

0.038

0.037

0.037

0.037

0.036

0.035

0.034

0.034

0.034

0.032

0.033

S

12

29
27
21
21
12

9
8
6
4
3
2

1
–2
–3
–3
–4
–5
–7
–6
–7
–9

–10
–10
–10
–10
–11
–12
–11

0.796

0.616

0.637

0.574

0.648

0.649

0.641

0.648

0.670

0.654

0.675

0.684

0.669

0.693

0.670

0.701

0.712

0.719

0.713

0.709

0.733

0.715

0.713

0.715

0.712

0.741

0.722

0.733

S

22

–119
–122
–133
–135
–143
–148
–150
–153
–155
–156
–157
–158
–161
–161
–161
–163
–164
–165
–163
–164
–167
–165
–166
–168
–168
–168
–168
–168

φ|S22|φ|S12|φ|S21|φ|S11|

REV 3

8

f

f

MHz

MHz

310
320
330
340
350
360
370
380
390
400
410
420
430
440
450
460
470
480
490
500
600
700
800
900

1000

T able 2. Common Source S–Parameters (VDS = 28 V, ID = 250 mA) (continued)

S

12

–12
–12
–13
–14
–12
–12
–12
–13
–13
–11
–12
–13
–12
–11
–10
–13
–11
–10
–10
–10
138

77
58
69
49

0.792

0.798

0.801

0.800

0.803

0.807

0.808

0.809

0.813

0.820

0.823

0.823

0.824

0.828

0.832

0.833

0.835

0.840

0.844

0.845

0.879

0.912

0.935

0.966

0.974

2.87

2.75

2.68

2.58

2.44

2.33

2.30

2.19

2.14

2.06

2.02

1.98

1.89

1.83

1.81

1.75

1.65

1.60

1.55

1.56

1.21

0.92

0.79

0.67

0.57

S

21

57
56
53
53
52
50
50
48
49
47
45
44
44
43
41
41
41
40
38
37
29
23
18
11

5

0.032

0.032

0.031

0.030

0.029

0.029

0.029

0.028

0.027

0.026

0.027

0.026

0.025

0.024

0.024

0.025

0.023

0.022

0.022

0.022

0.002

0.017

0.039

0.030

0.043

S

11

–167
–167
–168
–168
–169
–169
–169
–169
–170
–170
–170
–171
–171
–172
–172
–172
–172
–172
–173
–173
–176
–179

179
176
172

0.750

0.739

0.760

0.727

0.755

0.772

0.787

0.768

0.775

0.765

0.805

0.794

0.778

0.785

0.812

0.838

0.817

0.818

0.819

0.833

0.870

0.862

0.887

0.892

0.945

S

22

φ|S22|φ|S12|φ|S21|φ|S11|

–167
–166
–170
–172
–170
–171
–169
–170
–169
–167
–170
–173
–174
–173
–172
–175
–173
–172
–172
–173
–176
–176

179
179
175

REV 3

9

P ACKAGE DIMENSIONS

–A–

U

G

12

K

345

–B–

Q

2 PL

0.51 (0.020) B

M

M

A

T

M

D 4 PL

T

M

A

SEATING
PLANE

M

0.51 (0.020) B

J

N

E

H

M

C

–T–

NOTES:

1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

DIM MIN MAX MIN MAX

A 0.965 0.985 24.52 25.01
B 0.245 0.265 6.23 6.73
C 0.165 0.185 4.20 4.69
D 0.050 0.070 1.27 1.77
E 0.070 0.080 1.78 2.03
G 0.254 BSC 6.45 BSC
H 0.095 0.105 2.42 2.66
J 0.003 0.006 0.08 0.15
K 0.625 0.675 15.88 17.14
N 0.495 0.520 12.58 13.20
Q 0.120 0.140 3.05 3.55
U 0.725 BSC 18.42 BSC

STYLE 1:

PIN 1. DRAIN

2. DRAIN

3. GATE

4. GATE

5. SOURCE

MILLIMETERSINCHES

CASE 412–01

ISSUE O

Specifications subject to change without notice.

n

North America: Tel. [phone], Fax [phone]

n Asia/Pacific: Tel.[phone], Fax [phone]
n

Europe: Tel. [phone], Fax[phone]

Visit www.macom.com for additional data sheets and product information.

REV 3

10