Page 1
SEMICONDUCTOR TECHNICAL DATA
The RF Line
Order this document
by MRF10502/D
Designed for 1025–1150 MHz pulse common base amplifier applications
such as TCAS, TACAN and Mode–S transmitters.
• Guaranteed Performance @ 1090 MHz
Output Power = 500 Watts Peak
Gain = 8.5 dB Min, 9.0 dB (Typ)
500 W (PEAK)
1025–1150 MHz
MICROWAVE POWER
TRANSISTOR
NPN SILICON
•100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
• Hermetically Sealed Industry Package
• Silicon Nitride Passivated
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
• Internal Input and Output Matching
• Characterized with 10 µs, 1% Duty Cycle Pulses
CASE 355J–02, STYLE 1
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Peak (1) I
Total Device Dissipation @ TC = 25°C (1), (2)
Derate above 25°C
Storage Temperature Range T
Junction Temperature T
CES
CBO
EBO
C
P
D
stg
J
65 Vdc
65 Vdc
3.5 Vdc
29 Adc
1460
8.3
–65 to +200 °C
200 °C
Watts
W/°C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case (3) R
NOTES:
1. Under pulse RF operating conditions.
2. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as pulsed RF
amplifiers.
3.Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. (Worst case θ
measured @ 32 µs, 2%.)
θJC
0.12 °C/W
JC
value
Replaces MRF10500/D
1
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ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min Typ Max Unit
= 25°C unless otherwise noted.)
C
OFF CHARACTERISTICS
Collector–Emitter Breakdown V oltage (IC = 60 mAdc, VBE = 0) V
Collector–Base Breakdown Voltage (IC = 60 mAdc, IE = 0) V
Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V
Collector Cutoff Current (VCB = 36 Vdc, IE = 0) I
ON CHARACTERISTICS
DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc) h
FUNCTIONAL TESTS
Common–Base Amplifier Power Gain
(VCC = 50 Vdc, P
Collector Efficiency
(VCC = 50 Vdc, P
Load Mismatch
(VCC = 50 Vdc, P
VSWR = 10:1 All Phase Angles)
= 500 W Peak, f = 1090 MHz)
out
= 500 W Peak, f = 1090 MHz)
out
= 500 W Peak, f = 1090 MHz,
out
(BR)CES
(BR)CBO
(BR)EBO
CBO
FE
G
PB
η 40 45 — %
ψ No Degradation in Output Power
65 — — Vdc
65 — — Vdc
3.5 — — Vdc
— — 25 mAdc
20 — — —
8.5 9.0 — dB
RF INPUT
C1 — 82 pF 100 Mil Chip Capacitor
C2 — 39 pF 100 Mil Chip Capacitor
C3 — 0.1 µF
C4 — 100 µF, 100 Vdc, Electrolytic
L1 — 3 Turns #18 AWG, 1/8″ ID, 0.18 Long
.081
Z1 Z2 Z3 Z4
1.309
.150
Z5
.105
1.725
.216
D.U.T.
.625
1.123 2.000
.081
C2 C3 C4
L1
Z6 Z7 Z8 Z9
Z1–Z9 — Microstrip, See Details
Board Material — Teflon, Glass Laminate
Dielectric Thickness = 0.030″
εr = 2.55, 2 Oz. Copper
.700
.644
+
C1
.160
.650
.365
+
–
RF OUTPUT
.355
.081
.100
Replaces MRF10500/D
2
1.108
.500
0.140
Figure 1. T est Circuit
Page 3
600
450
300
, OUTPUT POWER (WATTS)
150
OUT
P
0 1530456075 100115
PIN, INPUT POWER (WATTS)
f = 1090 MHz
VCC = 50 Volts
Figure 2. Output Power versus Input Power
1090
1120
1060
f = 1030 MHz
f = 1030 MHz
Zo = 10
Z
OUT
1150
(ZOL*)
Ω
Replaces MRF10500/D
3
1060
in
1090
ZOL* is the conjugate of the optimum load
impedance into which the device operates at a
given output power voltage and frequency.
P
= 500 W Pk VCC = 50 V
OUT
f
MHz
1030
1060
1090
1120
1150
Z
in
OHMS
55.3 + j2.25
56.2 + j0.25
55.2 – j1.45
53.7 – j1.35
3.15 – j1.35
1150
ZOL*(Z
OUT
OHMS
62.6 + j1.89
2.56 + j2.09
2.12 + j2.29
21.9 + j2.15
91.6 + j1.62
Z
1120
)
Figure 3. Series Equivalent Input/Output Impedances
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PACKAGE DIMENSIONSPACKAGE DIMENSIONS
–T–
SEATING
PLANE
–A–
M
K
R
U
1
–B–
3
2
Q
RADIUS 2 PL
0.51 (0.020) B
M
T
M
A
M
D
J
N
H
E
C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM MINMAXMIN MAX
A 0.990 1.010 25.15 25.65
B 0.375 0.395 9.53 10.03
C 0.145 0.175 3.68 4.45
D 0.195 0.205 4.95 5.21
E 0.055 0.065 1.40 1.65
H 0.117 0.133 2.97 3.38
J 0.003 0.006 0.08 0.15
K 0.580 0.620 14.73 15.75
M 45 REF 45 REF
N 0.590 0.610 14.99 15.49
Q 0.055 0.065 1.40 1.65
R 0.395 0.405 10.03 10.29
U 0.800 BSC 20.32 BSC
STYLE 1:
PIN 1. COLLECTOR
2. EMITTER
3. BASE
MILLIMETERSINCHES
__
CASE 355J–02
ISSUE A
Specifications subject to change without notice.
n
North America: Tel. (800) 366-2266, Fax (800) 618-8883
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
Replaces MRF10500/D
4
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